KR102261953B1 - Light emitting device, light emitting device package having the same, and light system having the same - Google Patents

Abstract

The light emitting device according to the embodiment includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer disposed under the first conductivity type semiconductor layer, and a space between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. an active layer disposed thereon; a plurality of holes penetrating through the second conductivity type semiconductor layer and the active layer from a bottom surface of the second conductivity type semiconductor layer and exposing a portion of the first conductivity type semiconductor layer; a first electrode layer electrically connected to the first conductivity type semiconductor layer through the plurality of holes from a bottom surface of the semiconductor layer; and a substrate disposed under the first electrode layer, wherein the substrate is a metal-insulator-metal (MIM) ) A light emitting device including a type capacitor.

Description

A light emitting device, a light emitting device package including the same, and a lighting system including the same {LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME, AND LIGHT SYSTEM HAVING THE SAME}

The embodiment relates to a light emitting device, a light emitting device package including the same, and a lighting system including the same.

A light emitting diode is a pn junction diode that converts electric energy into light energy. It can be made of compound semiconductors such as Group III and Group V on the periodic table, and various colors can be realized by adjusting the composition ratio of the compound semiconductor. This is possible.

When a forward voltage is applied, the electrons of the n-layer and the holes of the p-layer combine to emit energy corresponding to the energy gap between the conduction band and the valance band, and the energy is emitted as light. It becomes a light emitting device.

Nitride semiconductors are receiving great attention in the field of developing optical devices and high-power electronic devices due to their high thermal stability and wide bandgap energy. In particular, a blue light emitting device, a green light emitting device, and an ultraviolet (UV) light emitting device using a nitride semiconductor have been commercialized and widely used.

In a conventional light emitting device, a Zener diode is connected in parallel to the light emitting device to prevent damage to an active layer from electrostatic discharge (ESD) and mounted in a package. However, the package performance deteriorates due to light absorption due to the Zener diode connection, and an additional process for mounting is required.

An embodiment is to provide a light emitting device, a light emitting device package, and a lighting system including a board having a large-capacity capacitor built-in for protection from ESD.

In addition, the embodiment is to provide a light emitting device, a light emitting device package, and a lighting system having strong ESD resistance without using a Zener diode.

A light emitting device according to an embodiment includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer disposed under the first conductivity type semiconductor layer, and between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer an active layer disposed on the , a plurality of holes penetrating through the second conductivity type semiconductor layer and the active layer from a bottom surface of the second conductivity type semiconductor layer and exposing a portion of the first conductivity type semiconductor layer; a first electrode layer electrically connected to the first conductive type semiconductor layer through the plurality of holes from a bottom surface of the semiconductor layer; and a substrate disposed under the first electrode layer, wherein the substrate is a metal-insulator- metal) type capacitors.

A light emitting device according to an embodiment includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer disposed under the first conductivity type semiconductor layer, and between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer an active layer disposed on the , a first electrode electrically connected to the first conductivity type semiconductor layer, a second electrode disposed under the second conductivity type semiconductor layer, and a substrate disposed under the second electrode, , the substrate may include a metal-insulator-metal (MIM) type capacitor.

The embodiment has an effect of protecting the active layer from ESD impact by providing a large-capacity capacitor substrate.

In addition, the embodiment has the effect of increasing the light efficiency of the light emitting device package because there is no Zener diode.

1 is a cross-sectional view of a light emitting device according to an embodiment.
FIG. 2 is a conceptual diagram for explaining that the light emitting device shown in FIG. 1 protects an active layer from ESD.
3 is a cross-sectional view of a light emitting device according to another embodiment.
4 is a cross-sectional view of a light emitting device according to another embodiment.
5 to 7 are exploded perspective views illustrating embodiments of a lighting system including a light emitting device according to an embodiment.

In the description of an embodiment, each layer (film), region, pattern or structure is “on/over” or “under” the substrate, each layer (film), region, pad or pattern. In the case of being described as being formed on, “on/over” and “under” include both “directly” or “indirectly” formed through another layer. do. In addition, the criteria for the upper / upper or lower of each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not fully reflect the actual size.

1 is a cross-sectional view of a light emitting device according to an embodiment.

Referring to FIG. 1 , the light emitting device 100 according to the embodiment includes a first conductive semiconductor layer 160 , a second conductive semiconductor layer 140 disposed under the first conductive semiconductor layer 160 , and , the light emitting structure 130 including the active layer 150 disposed between the first conductivity type semiconductor layer 160 and the second conductivity type semiconductor layer 140 , and from the bottom surface of the second conductivity type semiconductor layer 140 . A plurality of holes penetrating through the second conductivity type semiconductor layer 140 and the active layer 150 to expose a portion of the first conductivity type semiconductor layer 160 , and the plurality of holes from the bottom surface of the second conductivity type semiconductor layer 140 . The first electrode layer 175 and the first electrode 170 electrically connected to the first conductivity type semiconductor layer 160 through the hole of the second electrode layer 185 electrically connected to the second conductivity type semiconductor layer 140 . ) and the second electrode 180 , and the substrate 110 disposed under the first electrode layer 175 .

The substrate 110 includes a first conductive line 113 connected to the first electrode layer 175 , a second conductive line 115 connected to the second electrode, a first conductive line 113 and a second conductive line An insulating layer 111 may be included between the 115 .

According to an embodiment, the first conductive line 113 and the second conductive line 115 may be alternately formed, and the line width of the first conductive line 113 and the second conductive line 115 may be the same. , The interval between the first conductive line 113 and the second conductive line 115 may be constant, but is not limited thereto.

The insulating layer 111 may be disposed between the first conductive line 113 and the second conductive line 115 to space the first conductive line 113 and the second conductive line 115 apart from each other. According to an embodiment, the shapes of the first conductive line 113 and the second conductive line 115 may have a fork shape, and the width and the separation distance between the first conductive line 113 and the second conductive line 115 . can be adjusted to adjust the capacitance.

That is, in the light emitting device according to the embodiment, a metal-insulator-metal (MIM)-type capacitor substrate may be disposed under the light emitting structure 130 to protect the light emitting device from ESD. In addition, since the substrate 110 is implemented as a capacitor, it can have a large capacitance, thereby protecting the light emitting device from ESD.

The first conductivity type semiconductor layer 160 is implemented as a group III-V compound semiconductor doped with a first conductivity type dopant, and the first conductivity type semiconductor layer 160 includes In _x Al _y Ga _1-xy N (0). ≤x≤1, 0≤y≤1, 0≤x+y≤1). The first conductive semiconductor layer 160 has a stacked structure of layers including at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP may include The first conductivity-type semiconductor layer 160 is an n-type semiconductor layer, and the first conductivity-type dopant is an n-type dopant and includes Si, Ge, Sn, Se, and Te. An electrode may be further disposed on the first conductivity type semiconductor layer.

In the active layer 150 , electrons (or holes) injected through the first conductivity type semiconductor layer 160 and holes (or electrons) injected through the second conductivity type semiconductor layer 140 meet each other to form the active layer 150 . It is a layer that emits light due to the difference in the band gap of the energy band according to the material forming the . The active layer 130 may be formed of any one of a single well structure, a multi-well structure, a quantum dot structure, or a quantum wire structure, but is not limited thereto.

The second conductivity type semiconductor layer 140 is a semiconductor doped with a second conductivity type dopant, for example, In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x+y≤1) ) including the composition formula. The second conductive semiconductor layer 140 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. The second conductivity-type semiconductor layer 140 is a p-type semiconductor layer, and the second conductivity-type dopant is a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

The second conductive semiconductor layer 140 may include a superlattice structure, and the superlattice structure may include an InGaN/GaN superlattice structure or an AlGaN/GaN superlattice structure. The superlattice structure of the second conductive semiconductor layer 140 may protect the active layer by spreading the current included in the voltage abnormally.

According to an embodiment, the light emitting structure 130 may have opposite conductivity types. For example, the first conductivity type semiconductor layer 160 is a p-type semiconductor layer, and the second conductivity type semiconductor layer 140 is an n-type semiconductor layer. can be placed as A first conductivity type semiconductor layer having a polarity opposite to that of the second conductivity type semiconductor layer may be further disposed on the second conductivity type semiconductor layer 140 .

The light emitting structure 130 may be implemented as any one of an n-p junction structure, a p-n junction structure, an n-p-n junction structure, and a p-n-p junction structure. Here, p is a p-type semiconductor layer, n is an n-type semiconductor layer, and - includes a structure in which the p-type semiconductor layer and the n-type semiconductor layer are in direct or indirect contact.

In the embodiment, the light emitting structure 130 is a vertical type of a via hole type, but is not limited thereto.

The first electrode layer 175 may electrically connect the first conductive semiconductor layer 160 and the first electrode 170 through the plurality of holes, and the second electrode layer 185 may be connected to the second electrode 180 and the second electrode 180 . The second conductive semiconductor layer 140 may be electrically connected.

FIG. 2 is a conceptual diagram for explaining that the light emitting device shown in FIG. 1 protects an active layer from ESD.

1 and 2 , it is an equivalent circuit diagram connecting the light emitting structure 130 and the substrate 110 . The light emitting structure 130 may be connected in parallel with the substrate 110 made of a capacitor, and the substrate 110 bypasses the current through the substrate 110 when a momentary overvoltage is applied to the light emitting structure 130 . (bypass), it is possible to protect the light emitting structure (130). Accordingly, reliability for ESD may be improved through the capacitor substrate 110 without using a Zener diode.

3 is a cross-sectional view of a light emitting device according to another embodiment.

1 to 3 , the light emitting device 100 according to the embodiment may be connected to a first lead frame 213 and a second lead frame 214 disposed on a package body. When the first lead frame 213 and the second lead frame 214 are electrically separated, power may be provided to the light emitting device 100 .

The light emitting device 100 may be electrically connected to the first lead frame 213 and/or the second lead frame 214 by any one of a wire method, a flip chip method, and a die bonding method. In the embodiment, the light emitting device 100 is electrically connected to the first lead frame 213 and the second lead frame 214 through wires, respectively, but is not limited thereto.

In an embodiment, the first electrode 170 may be connected to the first lead frame 213 , the second electrode 180 may be connected to the second lead frame 214 , and the light emitting structure 130 and the substrate 110 . ) may be connected in parallel to protect the light emitting structure 130 from ESD.

4 is a cross-sectional view of a light emitting device according to another embodiment.

Referring to FIG. 4 , the light emitting device 100 according to the embodiment includes a first conductive semiconductor layer 160 , a second conductive semiconductor layer 140 disposed under the first conductive semiconductor layer 160 , and , an active layer 150 disposed between the first conductivity type semiconductor layer 160 and the second conductivity type semiconductor layer 140 , and a first electrode 170 electrically connected to the first conductivity type semiconductor layer 160 , It includes a second electrode 180 disposed under the second conductive semiconductor layer 140 , and a substrate 110 disposed under the second electrode 180 , wherein the substrate 110 is a metal- It may include an insulator-metal type capacitor.

The substrate 110 includes a second conductive line 115 connected to the first electrode 170 , a first conductive line 113 connected to the second electrode 180 , a first conductive line and a second conductive line An insulating layer may be included therebetween. The first conductive line and the second conductive line may be alternately formed.

The line widths of the first conductive line 113 and the second conductive line 115 may be the same, and the distance between the first conductive line 113 and the second conductive line 115 may be constant, but there is no limitation on this. it is not

The insulating layer 111 may be disposed between the first conductive line 113 and the second conductive line 115 to space the first conductive line 113 and the second conductive line 115 apart from each other. According to an embodiment, the first conductive line 113 and the second conductive line 115 may be formed in plurality, and the width and the separation distance of the first conductive line 113 and the second conductive line 115 are adjusted. Thus, the capacitance can be adjusted.

In an embodiment, the first electrode 170 may be connected to the first lead frame 213 , the second electrode 180 may be connected to the second lead frame 214 , and the light emitting structure 130 and the substrate 110 . ) may be connected in parallel to protect the light emitting structure 130 from ESD.

5 to 7 are exploded perspective views illustrating embodiments of a lighting system including a light emitting device according to an embodiment.

5 is a cross-sectional view of a light emitting device package according to an embodiment.

The light emitting device package according to the present invention may be equipped with a light emitting device having the structure as described above.

The light emitting device package 200 includes a package body 205 , a first lead frame 213 and a second lead frame 214 disposed on the package body 205 , and the package body 205 . The light emitting device 100 is disposed on the first lead frame 213 and the second lead frame 214 and electrically connected to the light emitting device 100, and a molding member 230 surrounding the light emitting device 100 is included.

The package body 205 may be formed of a silicon material, a synthetic resin material, or a metal material, and an inclined surface may be formed around the light emitting device 100 .

The first lead frame 213 and the second lead frame 214 are electrically isolated from each other, and serve to provide power to the light emitting device 100 . In addition, the first lead frame 213 and the second lead frame 214 may serve to increase light efficiency by reflecting the light generated by the light emitting device 100 , and in the light emitting device 100 , It can also serve to dissipate the generated heat to the outside.

The light emitting device 100 may be disposed on the package body 205 or on the first lead frame 213 or the second lead frame 214 .

The light emitting device 100 may be electrically connected to the first lead frame 213 and/or the second lead frame 214 by any one of a wire method, a flip chip method, and a die bonding method. In the embodiment, the light emitting device 100 is electrically connected to the first lead frame 213 and the second lead frame 214 through wires, respectively, but is not limited thereto.

The molding member 230 may surround the light emitting device 100 to protect the light emitting device 100 . In addition, the molding member 230 may include a phosphor 232 to change the wavelength of light emitted from the light emitting device 100 .

6 and 7 are views showing a lighting device according to an embodiment.

As shown in FIG. 6 , the lighting device according to the embodiment includes a cover 2100 , a light source module 2200 , a heat sink 2400 , a power supply unit 2600 , an inner case 2700 , and a socket 2800 . may include In addition, the lighting device according to the embodiment may further include any one or more of the member 2300 and the holder 2500 . The light source module 2200 may include the light emitting device 100 or the light emitting device package 200 according to the present invention.

For example, the cover 2100 may have a shape of a bulb or a hemisphere, and may be provided in a shape with a hollow inside and an open part. The cover 2100 may be optically coupled to the light source module 2200 . For example, the cover 2100 may diffuse, scatter, or excite the light provided from the light source module 2200 . The cover 2100 may be a kind of optical member. The cover 2100 may be coupled to the heat sink 2400 . The cover 2100 may have a coupling portion coupled to the heat sink 2400 .

A milky white paint may be coated on the inner surface of the cover 2100 . The milky white paint may include a diffusing material for diffusing light. The surface roughness of the inner surface of the cover 2100 may be greater than the surface roughness of the outer surface of the cover 2100 . This is so that the light from the light source module 2200 is sufficiently scattered and diffused to be emitted to the outside.

The material of the cover 2100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 2100 may be transparent or opaque so that the light source module 2200 can be seen from the outside. The cover 2100 may be formed through blow molding.

The light source module 2200 may be disposed on one surface of the heat sink 2400 . Accordingly, heat from the light source module 2200 is conducted to the heat sink 2400 . The light source module 2200 may include a light source unit 2210 , a connection plate 2230 , and a connector 2250 .

The member 2300 is disposed on the upper surface of the heat sink 2400 and includes a plurality of light source units 2210 and guide grooves 2310 into which the connector 2250 is inserted. The guide groove 2310 corresponds to the board and the connector 2250 of the light source unit 2210 .

The surface of the member 2300 may be coated or coated with a light reflective material. For example, the surface of the member 2300 may be coated or coated with a white paint. The member 2300 reflects light reflected on the inner surface of the cover 2100 and returned to the light source module 2200 in the direction of the cover 2100 again. Accordingly, the light efficiency of the lighting device according to the embodiment may be improved.

The member 2300 may be made of, for example, an insulating material. The connection plate 2230 of the light source module 2200 may include an electrically conductive material. Accordingly, electrical contact may be made between the heat sink 2400 and the connection plate 2230 . The member 2300 may be made of an insulating material to block an electrical short between the connection plate 2230 and the heat sink 2400 . The heat sink 2400 receives heat from the light source module 2200 and heat from the power supply unit 2600 and radiates heat.

The holder 2500 blocks the receiving groove 2719 of the insulating part 2710 of the inner case 2700 . Accordingly, the power supply unit 2600 accommodated in the insulating unit 2710 of the inner case 2700 is sealed. The holder 2500 has a guide protrusion 2510 . The guide protrusion 2510 has a hole through which the protrusion 2610 of the power supply unit 2600 passes.

The power supply unit 2600 processes or converts an electrical signal received from the outside and provides it to the light source module 2200 . The power supply unit 2600 is accommodated in the receiving groove 2719 of the inner case 2700 , and is sealed inside the inner case 2700 by the holder 2500 .

The power supply unit 2600 may include a protrusion part 2610 , a guide part 2630 , a base 2650 , and an extension part 2670 .

The guide part 2630 has a shape protruding outward from one side of the base 2650 . The guide part 2630 may be inserted into the holder 2500 . A plurality of components may be disposed on one surface of the base 2650 . The plurality of components include, for example, a DC converter for converting AC power provided from an external power source into DC power, a driving chip for controlling the driving of the light source module 2200 , and ESD for protecting the light source module 2200 . (ElectroStatic discharge) may include a protection device, but is not limited thereto.

The extension 2670 has a shape protruding outward from the other side of the base 2650 . The extension part 2670 is inserted into the connection part 2750 of the inner case 2700 and receives an electrical signal from the outside. For example, the extension portion 2670 may be provided to be equal to or smaller than the width of the connection portion 2750 of the inner case 2700 . Each end of the "+ wire" and the "- wire" may be electrically connected to the extension part 2670 , and the other end of the "+ wire" and the "- wire" may be electrically connected to the socket 2800 . .

The inner case 2700 may include a molding unit together with the power supply unit 2600 therein. The molding part is a part where the molding liquid is hardened, and allows the power supply unit 2600 to be fixed inside the inner case 2700 .

In addition, as shown in FIG. 7 , the lighting device according to the present invention includes a cover 3100 , a light source unit 3200 , a heat sink 3300 , a circuit unit 3400 , an inner case 3500 , and a socket 3600 . can do. The light source unit 3200 may include a light emitting device or a light emitting device package according to an embodiment.

The cover 3100 has a bulb shape and is hollow. The cover 3100 has an opening 3110 . The light source unit 3200 and the member 3350 may be inserted through the opening 3110 .

The cover 3100 may be coupled to the heat sink 3300 and surround the light source unit 3200 and the member 3350 . By coupling the cover 3100 and the heat sink 3300 , the light source unit 3200 and the member 3350 may be blocked from the outside. The cover 3100 and the heat sink 3300 may be coupled through an adhesive, or may be coupled in various ways such as a rotation coupling method and a hook coupling method. The rotation coupling method is a method in which the screw thread of the cover 3100 is coupled to the screw groove of the heat sink 3300, and the cover 3100 and the heat sink 3300 are coupled by the rotation of the cover 3100. In the hook coupling method, the chin of the cover 3100 is fitted into the groove of the heat sink 3300 so that the cover 3100 and the heat sink 3300 are coupled.

The cover 3100 is optically coupled to the light source unit 3200 . Specifically, the cover 3100 may diffuse, scatter, or excite light from the light emitting device 3230 of the light source unit 3200 . The cover 3100 may be a kind of optical member. Here, the cover 3100 may have a phosphor inside/outside or inside in order to excite the light from the light source unit 3200 .

A milky white paint may be coated on the inner surface of the cover 3100 . Here, the milky white paint may include a diffusion material for diffusing light. The surface roughness of the inner surface of the cover 3100 may be greater than the surface roughness of the outer surface of the cover 3100 . This is to sufficiently scatter and diffuse the light from the light source unit 3200 .

The material of the cover 3100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 3100 may be made of a transparent material through which the light source unit 3200 and the member 3350 can be seen from the outside, or may be made of an opaque material that is invisible. The cover 3100 may be formed, for example, by blow molding.

The light source unit 3200 may be disposed on the member 3350 of the heat sink 3300 and may be disposed in plurality. Specifically, the light source unit 3200 may be disposed on one or more of the plurality of side surfaces of the member 3350 . Also, the light source unit 3200 may be disposed at an upper end of the member 3350 .

The light source unit 3200 may be disposed on three side surfaces of the six side surfaces of the member 3350 . However, the present invention is not limited thereto, and the light source unit 3200 may be disposed on all side surfaces of the member 3350 . The light source unit 3200 may include a substrate 3210 and a light emitting device 3230 . The light emitting device 3230 may be disposed on one surface of the substrate 3210 .

The substrate 3210 has a rectangular plate shape, but is not limited thereto and may have various shapes. For example, the substrate 3210 may have a circular or polygonal plate shape. The substrate 3210 may be a circuit pattern printed on an insulator, for example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, etc. may include. In addition, a COB (Chips On Board) type capable of directly bonding an unpackaged LED chip on a printed circuit board may be used. In addition, the substrate 3210 may be formed of a material that efficiently reflects light, or the surface of the substrate 3210 may be formed of a color that efficiently reflects light, for example, white or silver. The substrate 3210 may be electrically connected to the circuit unit 3400 accommodated in the heat sink 3300 . The substrate 3210 and the circuit unit 3400 may be connected through, for example, a wire. A wire may pass through the heat sink 3300 to connect the substrate 3210 and the circuit unit 3400 .

The light emitting device 3230 may be a light emitting diode chip emitting red, green, and blue light or a light emitting diode chip emitting UV. Here, the light emitting diode chip may be of a horizontal type or a vertical type, and the light emitting diode chip may emit blue, red, yellow, or green. can

The light emitting device 3230 may have a phosphor. The phosphor may be any one or more of a garnet-based (YAG, TAG), a silicate, a nitride, and an oxynitride-based phosphor. Alternatively, the phosphor may be any one or more of a yellow phosphor, a green phosphor, and a red phosphor.

The heat sink 3300 may be coupled to the cover 3100 and radiate heat from the light source unit 3200 . The heat sink 3300 has a predetermined volume and includes an upper surface 3310 and a side surface 3330 . A member 3350 may be disposed on the upper surface 3310 of the heat sink 3300 . The upper surface 3310 of the heat sink 3300 may be coupled to the cover 3100 . The upper surface 3310 of the heat sink 3300 may have a shape corresponding to the opening 3110 of the cover 3100 .

A plurality of heat dissipation fins 3370 may be disposed on the side surface 3330 of the heat sink 3300 . The heat dissipation fin 3370 may extend outwardly from the side surface 3330 of the heat sink 3300 or may be connected to the side surface 3330 . The heat dissipation fin 3370 may increase the heat dissipation area of the heat dissipation body 3300 to improve heat dissipation efficiency. Here, the side surface 3330 may not include the heat dissipation fin 3370 .

The member 3350 may be disposed on the upper surface 3310 of the heat sink 3300 . The member 3350 may be integral with the upper surface 3310 or may be coupled to the upper surface 3310 . The member 3350 may be a polygonal pillar. Specifically, the member 3350 may be a hexagonal pole. The hexagonal column member 3350 has an upper surface, a lower surface, and six sides. Here, the member 3350 may be a circular column or an elliptical column as well as a polygonal column. When the member 3350 is a circular column or an elliptical column, the substrate 3210 of the light source unit 3200 may be a flexible substrate.

The light source unit 3200 may be disposed on six side surfaces of the member 3350 . The light source unit 3200 may be disposed on all six side surfaces, or the light source unit 3200 may be disposed on several side surfaces of the six side surfaces. In FIG. 11 , the light source unit 3200 is disposed on three of six side surfaces.

The substrate 3210 is disposed on a side surface of the member 3350 . A side surface of the member 3350 may be substantially perpendicular to the upper surface 3310 of the heat sink 3300 . Accordingly, the substrate 3210 and the upper surface 3310 of the heat sink 3300 may be substantially perpendicular to each other.

The material of the member 3350 may be a material having thermal conductivity. This is to quickly receive heat generated from the light source unit 3200 . The material of the member 3350 may be, for example, aluminum (Al), nickel (Ni), copper (Cu), magnesium (Mg), silver (Ag), tin (Sn), or an alloy of these metals. Alternatively, the member 3350 may be formed of a thermally conductive plastic having thermal conductivity. Thermally conductive plastics have advantages in that they are lighter in weight than metals and have unidirectional thermal conductivity.

The circuit unit 3400 receives power from the outside and converts the received power to match the light source unit 3200 . The circuit unit 3400 supplies the converted power to the light source unit 3200 . The circuit unit 3400 may be disposed on the heat sink 3300 . Specifically, the circuit unit 3400 may be accommodated in the inner case 3500 , and may be accommodated in the heat sink 3300 together with the inner case 3500 . The circuit unit 3400 may include a circuit board 3410 and a plurality of components 3430 mounted on the circuit board 3410 .

The circuit board 3410 has a circular plate shape, but is not limited thereto and may have various shapes. For example, the circuit board 3410 may have an elliptical or polygonal plate shape. The circuit board 3410 may have a circuit pattern printed on an insulator.

The circuit board 3410 is electrically connected to the board 3210 of the light source unit 3200 . The electrical connection between the circuit board 3410 and the board 3210 may be connected through, for example, a wire. A wire may be disposed inside the heat sink 3300 to connect the circuit board 3410 and the board 3210 .

The plurality of components 3430 include, for example, a DC converter for converting AC power provided from an external power source into DC power, a driving chip for controlling the driving of the light source unit 3200 , and for protecting the light source unit 3200 . It may include an electrostatic discharge (ESD) protection device and the like.

The inner case 3500 accommodates the circuit part 3400 therein. The inner case 3500 may have an accommodating part 3510 to accommodate the circuit part 3400 .

The accommodating part 3510 may have, for example, a cylindrical shape. The shape of the receiving part 3510 may vary depending on the shape of the heat sink 3300 . The inner case 3500 may be accommodated in the heat sink 3300 . The accommodating part 3510 of the inner case 3500 may be accommodated in the accommodating part formed on the lower surface of the heat sink 3300 .

The inner case 3500 may be coupled to the socket 3600 . The inner case 3500 may have a connection part 3530 coupled to the socket 3600 . The connection part 3530 may have a screw thread structure corresponding to the screw groove structure of the socket 3600 . The inner case 3500 is an insulator. Accordingly, an electrical short circuit between the circuit part 3400 and the heat sink 3300 is prevented. For example, the inner case 3500 may be formed of a plastic or resin material.

The socket 3600 may be coupled to the inner case 3500 . Specifically, the socket 3600 may be coupled to the connection part 3530 of the inner case 3500 . The socket 3600 may have the same structure as a conventional incandescent light bulb. The circuit part 3400 and the socket 3600 are electrically connected. The electrical connection between the circuit part 3400 and the socket 3600 may be connected through a wire. Accordingly, when external power is applied to the socket 3600 , the external power may be transmitted to the circuit unit 3400 . The socket 3600 may have a screw groove structure corresponding to the screw thread structure of the connection part 3550 .

110; Board
120; protective layer
130; light emitting structure
140; Second conductive semiconductor layer
150; active layer
160; first conductive semiconductor layer
170; first electrode
175; first electrode layer
180; second electrode
185; second electrode layer

Claims (15)

a first conductive semiconductor layer;
a second conductivity type semiconductor layer disposed under the first conductivity type semiconductor layer;
an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
a plurality of holes passing through the second conductive semiconductor layer and the active layer from a bottom surface of the second conductive semiconductor layer and exposing a portion of the first conductive semiconductor layer;
a first electrode layer electrically connected to the first conductive semiconductor layer through the plurality of holes from a bottom surface of the second conductive semiconductor layer;
a second electrode layer disposed between the second conductive semiconductor layer and the first electrode layer and electrically connected to the second conductive semiconductor layer;
a substrate disposed under the first electrode layer;
a first electrode disposed on the first electrode layer and electrically connected to the first electrode layer; and
a second electrode disposed on the second electrode layer and electrically connected to the second electrode layer;
The substrate is in direct contact with the bottom surface of the first electrode layer,
The substrate includes a metal-insulator-metal (MIM) type capacitor,
The substrate is
a first conductive line in direct contact with the first electrode layer and connected to the first electrode layer;
a second conductive line connected to the second electrode layer; and
an insulating layer disposed between the first and second conductive lines;
The horizontal width of the substrate is the same as the horizontal width of the first electrode layer in direct contact with the substrate. According to claim 1,
A light emitting device in which the first conductive line and the second conductive line are alternately formed. According to claim 1,
A light emitting device having the same line widths of the first conductive line and the second conductive line. According to claim 1,
A distance between the first conductive line and the second conductive line is a constant light emitting device. According to claim 1,
The first conductive line and the second conductive line are in a fork shape. delete delete delete delete delete delete delete delete delete delete

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