KR102258500B1 - 태양 전지 및 이를 제조하기 위한 공정 - Google Patents

태양 전지 및 이를 제조하기 위한 공정 Download PDF

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KR102258500B1
KR102258500B1 KR1020167000117A KR20167000117A KR102258500B1 KR 102258500 B1 KR102258500 B1 KR 102258500B1 KR 1020167000117 A KR1020167000117 A KR 1020167000117A KR 20167000117 A KR20167000117 A KR 20167000117A KR 102258500 B1 KR102258500 B1 KR 102258500B1
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metal oxide
oxide layer
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solar cell
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KR20160029790A (ko
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옐라 아스와니
모함마드 카야 나제루딘
미셸 그레첼
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에꼴 뽈리떼끄닉 뻬데랄 드 로잔느 (으뻬에프엘)
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    • H01L51/4226—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01L51/0003—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H01L2031/0344—
    • H01L2251/303—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/361—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
KR1020167000117A 2013-07-01 2014-06-27 태양 전지 및 이를 제조하기 위한 공정 Active KR102258500B1 (ko)

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EP13174589.5 2013-07-01
EP13174589.5A EP2822009A1 (en) 2013-07-01 2013-07-01 Solar cell and process for producing the same
PCT/IB2014/062680 WO2015001459A1 (en) 2013-07-01 2014-06-27 Solar cell and process for producing the same

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KR20160029790A KR20160029790A (ko) 2016-03-15
KR102258500B1 true KR102258500B1 (ko) 2021-06-01

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US (1) US10332689B2 (https=)
EP (2) EP2822009A1 (https=)
JP (1) JP6616291B2 (https=)
KR (1) KR102258500B1 (https=)
CN (1) CN105493213B (https=)
AU (1) AU2014285760B2 (https=)
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JP6745214B2 (ja) * 2015-01-29 2020-08-26 積水化学工業株式会社 太陽電池及び太陽電池の製造方法
JP6486737B2 (ja) * 2015-03-19 2019-03-20 株式会社東芝 光電変換素子
WO2016208579A1 (ja) * 2015-06-26 2016-12-29 富士フイルム株式会社 光電変換素子、太陽電池、金属塩組成物および光電変換素子の製造方法
JP2017028028A (ja) * 2015-07-17 2017-02-02 積水化学工業株式会社 固体接合型光電変換素子および固体接合型光電変換素子用ｐ型半導体層
JP6382781B2 (ja) * 2015-09-15 2018-08-29 株式会社東芝 半導体素子の製造方法および製造装置
EP3357101A4 (en) 2015-10-02 2019-06-12 Alliance for Sustainable Energy, LLC HETERO-TRANSITION PEROVSKIT PHOTOVOLTAIC MODULES AND METHOD FOR THE PRODUCTION THEREOF
KR101994429B1 (ko) * 2015-10-27 2019-06-28 주식회사 엘지화학 태양전지의 광흡수체 제조 방법
JP6431513B2 (ja) * 2015-12-24 2018-11-28 旭化成株式会社 組成物
US20170330693A1 (en) * 2016-05-11 2017-11-16 Board Of Trustees Of Michigan State University Interlayer Additives For Highly Efficient And Hysteresis-Free Perovskite-Based Photovoltaic Devices
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WO2018223134A1 (en) * 2017-06-02 2018-12-06 Alliance For Sustainable Energy, Llc Oxide layers and methods of making the same
JP2019024035A (ja) * 2017-07-24 2019-02-14 シャープ株式会社 光電変換素子の製造方法
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RU2668944C1 (ru) * 2017-12-08 2018-10-05 Федеральное государственное бюджетное образовательное учреждение высшего образования Северо-Кавказский горно-металлургический институт (государственный технологический университет) (СКГМИ (ГТУ) Способ изготовления преобразователя солнечной энергии в электрическую на основе перовскитов
CN109037459B (zh) * 2018-08-03 2022-03-11 辽宁工业大学 一种高纯度钙钛矿薄膜制备方法
CN109148694A (zh) * 2018-08-27 2019-01-04 领旺（上海）光伏科技有限公司 用于柔性钙钛矿太阳能电池的ito电极表面修饰方法
CN111244280A (zh) * 2018-11-29 2020-06-05 台南大学 具金属氧化物的钙钛矿太阳能电池的制备方法
JP6675505B2 (ja) * 2019-02-15 2020-04-01 株式会社東芝 光電変換素子の製造方法
CN111628090A (zh) * 2019-02-27 2020-09-04 西安交通大学 一种多孔骨架层制备方法及太阳能电池吸收层制备方法
CN110534652B (zh) * 2019-09-10 2021-04-02 西北工业大学 一种钙钛矿太阳能电池及其制备方法
CN111081478B (zh) * 2019-12-31 2022-05-17 黑龙江大学 稀土均苯三甲酸配合物/三氧化二钇/二氧化钛复合光阳极及其构筑方法
KR20230068438A (ko) 2020-09-22 2023-05-17 케일룩스 코포레이션 통합 탠덤 태양광 모듈 제작을 위한 방법 및 소자
JP7500383B2 (ja) * 2020-10-09 2024-06-17 株式会社東芝 太陽電池、多接合型太陽電池、太陽電池モジュール及び太陽光発電システム
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WO2015001459A1 (en) 2015-01-08
EP2822009A1 (en) 2015-01-07
JP2016530703A (ja) 2016-09-29
EP3017456B1 (en) 2018-08-01
JP6616291B2 (ja) 2019-12-04
CN105493213B (zh) 2019-08-02
AU2014285760B2 (en) 2019-11-14
US10332689B2 (en) 2019-06-25
AU2014285760A1 (en) 2018-06-07
KR20160029790A (ko) 2016-03-15
EP3017456A1 (en) 2016-05-11
EP3017456B9 (en) 2018-12-19
US20160141112A1 (en) 2016-05-19
CN105493213A (zh) 2016-04-13

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