KR102253990B1 - Icp 플라즈마 프로세싱 챔버에서의 기판 최외곽 엣지 결함 감소, 높은 수율을 위한 단일 링 디자인 - Google Patents

Icp 플라즈마 프로세싱 챔버에서의 기판 최외곽 엣지 결함 감소, 높은 수율을 위한 단일 링 디자인 Download PDF

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KR102253990B1
KR102253990B1 KR1020157031577A KR20157031577A KR102253990B1 KR 102253990 B1 KR102253990 B1 KR 102253990B1 KR 1020157031577 A KR1020157031577 A KR 1020157031577A KR 20157031577 A KR20157031577 A KR 20157031577A KR 102253990 B1 KR102253990 B1 KR 102253990B1
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substrate
lip
inches
diameter
single ring
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KR20160023646A (ko
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시우 탕 응
창훈 리
후트리 다오
아담 레인
마이클 디. 빌버트
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어플라이드 머티어리얼스, 인코포레이티드
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    • H01L21/32136—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H01L21/3065—
    • H01L21/67207—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020157031577A 2013-06-26 2014-04-30 Icp 플라즈마 프로세싱 챔버에서의 기판 최외곽 엣지 결함 감소, 높은 수율을 위한 단일 링 디자인 Active KR102253990B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361839823P 2013-06-26 2013-06-26
US61/839,823 2013-06-26
PCT/US2014/036213 WO2014209492A1 (en) 2013-06-26 2014-04-30 Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber

Publications (2)

Publication Number Publication Date
KR20160023646A KR20160023646A (ko) 2016-03-03
KR102253990B1 true KR102253990B1 (ko) 2021-05-18

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KR1020157031577A Active KR102253990B1 (ko) 2013-06-26 2014-04-30 Icp 플라즈마 프로세싱 챔버에서의 기판 최외곽 엣지 결함 감소, 높은 수율을 위한 단일 링 디자인

Country Status (6)

Country Link
US (1) US20160099162A1 (cg-RX-API-DMAC10.html)
JP (2) JP6853038B2 (cg-RX-API-DMAC10.html)
KR (1) KR102253990B1 (cg-RX-API-DMAC10.html)
CN (2) CN111180305A (cg-RX-API-DMAC10.html)
TW (1) TWM492915U (cg-RX-API-DMAC10.html)
WO (1) WO2014209492A1 (cg-RX-API-DMAC10.html)

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WO2018187679A1 (en) * 2017-04-07 2018-10-11 Applied Materials, Inc. Plasma density control on substrate edge
KR102591660B1 (ko) * 2017-07-24 2023-10-19 램 리써치 코포레이션 이동가능한 에지 링 설계들
KR102191611B1 (ko) * 2017-09-13 2020-12-15 주식회사 엘지화학 패턴화 기판의 제조 방법
CN118380375A (zh) 2017-11-21 2024-07-23 朗姆研究公司 底部边缘环和中部边缘环
CN108269753B (zh) * 2018-01-10 2023-12-05 池州海琳服装有限公司 一种硅片单面清洗机
CN108063110B (zh) * 2018-01-10 2023-11-24 池州海琳服装有限公司 一种硅片浮动支撑机构
JP6859426B2 (ja) 2018-08-13 2021-04-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ エッジリングの位置決めおよびセンタリング機構を組み込んだプラズマシース調整のための交換可能および／または折りたたみ式エッジリングアセンブリ
WO2020081644A1 (en) * 2018-10-18 2020-04-23 Lam Research Corporation Lower plasma exclusion zone ring for bevel etcher
JP7541005B2 (ja) * 2018-12-03 2024-08-27 アプライド マテリアルズ インコーポレイテッド チャックとアーク放電に関する性能が改良された静電チャック設計
EP3987081A4 (en) * 2019-06-18 2023-07-05 Lam Research Corporation REDUCED DIAMETER SUPPORT RING MATERIAL FOR SUBSTRATE PROCESSING SYSTEMS
TWM602283U (zh) * 2019-08-05 2020-10-01 美商蘭姆研究公司 基板處理系統用之具有升降銷溝槽的邊緣環
EP4010915A4 (en) * 2019-08-05 2023-12-13 Lam Research Corporation EDGE RING SYSTEMS FOR SUBSTRATE PROCESSING SYSTEMS
KR102905595B1 (ko) 2020-03-23 2025-12-29 램 리써치 코포레이션 기판 프로세싱 시스템들에서의 중간-링 부식 보상
JP7752172B2 (ja) 2020-10-05 2025-10-09 ラム リサーチ コーポレーション プラズマ処理システム用の可動エッジリング
US20220282371A1 (en) * 2021-03-03 2022-09-08 Applied Materials, Inc. Electrostatic chuck with metal shaft
CN217387074U (zh) 2021-12-03 2022-09-06 朗姆研究公司 用于衬底处理系统中增强屏蔽的宽覆盖边缘环
WO2026106861A2 (en) * 2024-11-15 2026-05-21 Lam Research Corporation Electrostatic chuck

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US20130154175A1 (en) * 2011-12-15 2013-06-20 Applied Materials, Inc. Process kit components for use with an extended and independent rf powered cathode substrate for extreme edge tunability

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KR100292410B1 (ko) * 1998-09-23 2001-06-01 윤종용 불순물 오염이 억제된 반도체 제조용 반응 챔버
US7882800B2 (en) * 2001-12-13 2011-02-08 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
JP4209618B2 (ja) * 2002-02-05 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置及びリング部材
JP4286025B2 (ja) * 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 石英治具の再生方法、再生使用方法および半導体装置の製造方法
TWI488236B (zh) * 2003-09-05 2015-06-11 東京威力科創股份有限公司 Focusing ring and plasma processing device
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US20130154175A1 (en) * 2011-12-15 2013-06-20 Applied Materials, Inc. Process kit components for use with an extended and independent rf powered cathode substrate for extreme edge tunability

Also Published As

Publication number Publication date
KR20160023646A (ko) 2016-03-03
WO2014209492A1 (en) 2014-12-31
US20160099162A1 (en) 2016-04-07
TWM492915U (zh) 2015-01-01
JP2016530706A (ja) 2016-09-29
JP2021068909A (ja) 2021-04-30
CN111180305A (zh) 2020-05-19
JP6853038B2 (ja) 2021-03-31
CN105074869A (zh) 2015-11-18

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