KR102240081B1 - 측정기, 에칭 시스템, 실리콘 농도 측정 방법, 및 실리콘 농도 측정 프로그램 - Google Patents
측정기, 에칭 시스템, 실리콘 농도 측정 방법, 및 실리콘 농도 측정 프로그램 Download PDFInfo
- Publication number
- KR102240081B1 KR102240081B1 KR1020190029318A KR20190029318A KR102240081B1 KR 102240081 B1 KR102240081 B1 KR 102240081B1 KR 1020190029318 A KR1020190029318 A KR 1020190029318A KR 20190029318 A KR20190029318 A KR 20190029318A KR 102240081 B1 KR102240081 B1 KR 102240081B1
- Authority
- KR
- South Korea
- Prior art keywords
- concentration
- acid
- silicon
- phosphoric acid
- water
- Prior art date
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 175
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 175
- 239000010703 silicon Substances 0.000 title claims abstract description 175
- 238000005530 etching Methods 0.000 title claims abstract description 113
- 238000000691 measurement method Methods 0.000 title description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 294
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 147
- 238000005259 measurement Methods 0.000 claims abstract description 127
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 110
- 239000002253 acid Substances 0.000 claims abstract description 83
- 239000007788 liquid Substances 0.000 claims abstract description 77
- 239000000243 solution Substances 0.000 claims abstract description 62
- 239000012088 reference solution Substances 0.000 claims abstract description 30
- 238000010494 dissociation reaction Methods 0.000 claims abstract description 29
- 230000005593 dissociations Effects 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 23
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 134
- 150000003377 silicon compounds Chemical class 0.000 claims description 11
- 238000004611 spectroscopical analysis Methods 0.000 claims description 9
- 238000004497 NIR spectroscopy Methods 0.000 claims description 8
- 238000000862 absorption spectrum Methods 0.000 claims description 5
- 239000012488 sample solution Substances 0.000 description 13
- 238000012360 testing method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 230000005484 gravity Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3577—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing liquids, e.g. polluted water
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/359—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using near infrared light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018157338A JP6767442B2 (ja) | 2018-08-24 | 2018-08-24 | 測定器、エッチングシステム、シリコン濃度測定方法、及びシリコン濃度測定プログラム |
| JPJP-P-2018-157338 | 2018-08-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20200023162A KR20200023162A (ko) | 2020-03-04 |
| KR102240081B1 true KR102240081B1 (ko) | 2021-04-15 |
Family
ID=69622830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020190029318A KR102240081B1 (ko) | 2018-08-24 | 2019-03-14 | 측정기, 에칭 시스템, 실리콘 농도 측정 방법, 및 실리콘 농도 측정 프로그램 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6767442B2 (zh) |
| KR (1) | KR102240081B1 (zh) |
| CN (1) | CN110857913B (zh) |
| TW (1) | TWI695971B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023042256A (ja) * | 2021-09-14 | 2023-03-27 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置および基板処理方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA964842A (en) * | 1971-06-09 | 1975-03-25 | Gerald J. Rubin | Defluorination of phosphoric acid |
| KR970010977B1 (en) * | 1993-09-23 | 1997-07-05 | Korea Measurement System Co | Concentration measuring method using photo absorption |
| WO1995018190A1 (en) * | 1993-12-27 | 1995-07-06 | Kawasaki Steel Corporation | Isolation film of semiconductor device, coating fluid for forming the film, and process for producing the film |
| KR20010086495A (ko) * | 2000-03-02 | 2001-09-13 | 윤종용 | 인산용액내의 규산염 농도 계측을 이용한 습식식각장치 |
| TW511180B (en) * | 2000-07-31 | 2002-11-21 | Mitsubishi Chem Corp | Mixed acid solution in etching process, process for producing the same, etching process using the same and process for producing semiconductor device |
| JP4455043B2 (ja) * | 2003-12-24 | 2010-04-21 | 倉敷紡績株式会社 | 酸溶液の再生のためのシステム |
| WO2005067019A1 (en) * | 2003-12-30 | 2005-07-21 | Akrion, Llc | System and method for selective etching of silicon nitride during substrate processing |
| EP1724824A3 (en) * | 2005-05-17 | 2010-08-25 | Apprecia Technology Inc. | Equipment and method for measuring silicon concentration in phosphoric acid solution |
| JP2009058306A (ja) * | 2007-08-30 | 2009-03-19 | Kurabo Ind Ltd | 液体中の溶存無機物質濃度測定方法及び測定装置、並びに、当該溶存無機物質濃度測定装置を備えたエッチング液再生システム |
| US20110133099A1 (en) * | 2008-07-30 | 2011-06-09 | Horiba Advanced Techno, Co., Ltd. | Silicon concentration measuring instrument |
| JP2011117747A (ja) * | 2009-12-01 | 2011-06-16 | Horiba Advanced Techno Co Ltd | シリカ濃度測定装置及びシリカ濃度測定方法 |
| TW201140028A (en) * | 2009-12-01 | 2011-11-16 | Horiba Advanced Techno Co | Measuring method of concentration of silica and measuring device of concentration of silica |
| US8008087B1 (en) * | 2010-03-25 | 2011-08-30 | Eci Technology, Inc. | Analysis of silicon concentration in phosphoric acid etchant solutions |
| JP5752530B2 (ja) * | 2011-08-31 | 2015-07-22 | 倉敷紡績株式会社 | 基板処理装置 |
| CN103146306B (zh) * | 2011-12-07 | 2016-12-28 | 安集微电子（上海）有限公司 | 一种tsv阻挡层抛光液 |
| KR101389556B1 (ko) * | 2012-06-15 | 2014-05-15 | 브러커옵틱스코리아 주식회사 | 다채널 방식의 분광 분석기를 사용한 실시간 반도체 및 ｌｃｄ 공정 혼합액 분석 장치 및 방법 |
| US9887095B2 (en) * | 2013-03-12 | 2018-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for an etch process with silicon concentration control |
| KR20160010257A (ko) * | 2014-07-17 | 2016-01-27 | 가부시키가이샤 히라마 리카 켄큐쇼 | 에칭액 관리장치, 용해금속 농도 측정장치 및 용해금속 농도 측정방법 |
| KR101671118B1 (ko) * | 2014-07-29 | 2016-10-31 | 가부시키가이샤 스크린 홀딩스 | 기판 처리 장치 및 기판 처리 방법 |
| KR101757812B1 (ko) * | 2015-05-29 | 2017-07-14 | 세메스 주식회사 | 인산 재생 유닛 및 방법, 그리고 기판 처리 장치 및 방법 |
| KR102511986B1 (ko) * | 2015-09-02 | 2023-03-21 | 삼성전자주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| KR102237769B1 (ko) * | 2017-03-15 | 2021-04-09 | 가부시끼가이샤 도시바 | 에칭액, 에칭 방법, 및 전자 부품의 제조 방법 |
-
2018
- 2018-08-24 JP JP2018157338A patent/JP6767442B2/ja active Active
-
2019
- 2019-03-11 TW TW108108004A patent/TWI695971B/zh active
- 2019-03-14 CN CN201910193622.3A patent/CN110857913B/zh active Active
- 2019-03-14 KR KR1020190029318A patent/KR102240081B1/ko active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| TW202009451A (zh) | 2020-03-01 |
| CN110857913B (zh) | 2022-08-12 |
| JP2020031182A (ja) | 2020-02-27 |
| CN110857913A (zh) | 2020-03-03 |
| JP6767442B2 (ja) | 2020-10-14 |
| KR20200023162A (ko) | 2020-03-04 |
| TWI695971B (zh) | 2020-06-11 |
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