KR102239731B1 - 템플릿 복제 - Google Patents

템플릿 복제 Download PDF

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Publication number
KR102239731B1
KR102239731B1 KR1020170150384A KR20170150384A KR102239731B1 KR 102239731 B1 KR102239731 B1 KR 102239731B1 KR 1020170150384 A KR1020170150384 A KR 1020170150384A KR 20170150384 A KR20170150384 A KR 20170150384A KR 102239731 B1 KR102239731 B1 KR 102239731B1
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KR
South Korea
Prior art keywords
template
substrate
back pressure
pressure
active area
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KR1020170150384A
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English (en)
Korean (ko)
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KR20180054477A (ko
Inventor
최병진
안슈만 체랄라
요하네스 마리오 메이슬
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20180054477A publication Critical patent/KR20180054477A/ko
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Publication of KR102239731B1 publication Critical patent/KR102239731B1/ko
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32Component parts, details or accessories; Auxiliary operations
    • B29C43/58Measuring, controlling or regulating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70241Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32Component parts, details or accessories; Auxiliary operations
    • B29C43/58Measuring, controlling or regulating
    • B29C2043/5808Measuring, controlling or regulating pressure or compressing force

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020170150384A 2016-11-14 2017-11-13 템플릿 복제 Active KR102239731B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/350,714 2016-11-14
US15/350,714 US11454883B2 (en) 2016-11-14 2016-11-14 Template replication

Publications (2)

Publication Number Publication Date
KR20180054477A KR20180054477A (ko) 2018-05-24
KR102239731B1 true KR102239731B1 (ko) 2021-04-13

Family

ID=62108409

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170150384A Active KR102239731B1 (ko) 2016-11-14 2017-11-13 템플릿 복제

Country Status (6)

Country Link
US (2) US11454883B2 (enExample)
JP (1) JP6994911B2 (enExample)
KR (1) KR102239731B1 (enExample)
CN (1) CN108073036B (enExample)
SG (1) SG10201708703TA (enExample)
TW (1) TWI763728B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10627715B2 (en) 2016-10-31 2020-04-21 Canon Kabushiki Kaisha Method for separating a nanoimprint template from a substrate
US10288999B2 (en) 2016-12-20 2019-05-14 Canon Kabushiki Kaisha Methods for controlling extrusions during imprint template replication processes
JP7171394B2 (ja) * 2018-11-29 2022-11-15 キヤノン株式会社 成形装置、成形方法、および物品の製造方法
JP7431694B2 (ja) * 2020-07-28 2024-02-15 キヤノン株式会社 情報処理装置、膜形成装置、物品の製造方法、およびプログラム
US20220035245A1 (en) * 2020-07-31 2022-02-03 Applied Materials, Inc. Nano imprint stamps
US12085852B2 (en) 2021-12-27 2024-09-10 Canon Kabushiki Kaisha Template, method of forming a template, apparatus and method of manufacturing an article

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040090611A1 (en) * 2002-11-13 2004-05-13 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US20040146792A1 (en) * 2002-12-13 2004-07-29 Molecular Imprints, Inc. Magnification correction employing out-of-plane distortion of a substrate

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
MY133312A (en) * 2002-11-13 2007-11-30 Molecular Imprints Inc A chucking system and method for modulation shapes of substrates
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7150622B2 (en) 2003-07-09 2006-12-19 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
JP2007242893A (ja) * 2006-03-08 2007-09-20 Toshiba Corp パターン転写方法およびパターン転写装置
US8215946B2 (en) 2006-05-18 2012-07-10 Molecular Imprints, Inc. Imprint lithography system and method
US20100015270A1 (en) * 2008-07-15 2010-01-21 Molecular Imprints, Inc. Inner cavity system for nano-imprint lithography
WO2012164992A1 (ja) 2011-06-03 2012-12-06 パナソニック株式会社 電気接点部品
JP2013074115A (ja) 2011-09-28 2013-04-22 Fujifilm Corp ナノインプリント装置およびナノインプリント方法、並びに、歪み付与デバイスおよび歪み付与方法
JP2013110162A (ja) 2011-11-17 2013-06-06 Canon Inc インプリント装置及び物品の製造方法
JP6107078B2 (ja) * 2012-11-21 2017-04-05 大日本印刷株式会社 インプリントモールドの製造方法、および、パターン形成方法と半導体装置の製造方法
JP6282069B2 (ja) 2013-09-13 2018-02-21 キヤノン株式会社 インプリント装置、インプリント方法、検出方法及びデバイス製造方法
KR102305247B1 (ko) 2013-12-31 2021-09-27 캐논 나노테크놀로지즈 인코퍼레이티드 국부 필드 임프린팅을 위한 비대칭 템플릿 형상 변조
JP6273860B2 (ja) * 2014-01-27 2018-02-07 大日本印刷株式会社 インプリントモールド及び半導体デバイスの製造方法
JP2016042498A (ja) 2014-08-13 2016-03-31 キヤノン株式会社 インプリント装置および物品製造方法
US10627715B2 (en) 2016-10-31 2020-04-21 Canon Kabushiki Kaisha Method for separating a nanoimprint template from a substrate
US10969680B2 (en) 2016-11-30 2021-04-06 Canon Kabushiki Kaisha System and method for adjusting a position of a template
US10288999B2 (en) 2016-12-20 2019-05-14 Canon Kabushiki Kaisha Methods for controlling extrusions during imprint template replication processes

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040090611A1 (en) * 2002-11-13 2004-05-13 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US20040223131A1 (en) 2002-11-13 2004-11-11 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US20070114686A1 (en) 2002-11-13 2007-05-24 Molecular Imprints, Inc. Method for expelling gas positioned between a substrate and a mold
US20040146792A1 (en) * 2002-12-13 2004-07-29 Molecular Imprints, Inc. Magnification correction employing out-of-plane distortion of a substrate
US7323130B2 (en) 2002-12-13 2008-01-29 Molecular Imprints, Inc. Magnification correction employing out-of-plane distortion of a substrate

Also Published As

Publication number Publication date
CN108073036B (zh) 2022-08-23
KR20180054477A (ko) 2018-05-24
TWI763728B (zh) 2022-05-11
JP6994911B2 (ja) 2022-01-14
CN108073036A (zh) 2018-05-25
TW201830145A (zh) 2018-08-16
US11454883B2 (en) 2022-09-27
US20220390834A1 (en) 2022-12-08
JP2018082175A (ja) 2018-05-24
US20180136556A1 (en) 2018-05-17
SG10201708703TA (en) 2018-06-28
US11604409B2 (en) 2023-03-14

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