KR102239731B1 - 템플릿 복제 - Google Patents
템플릿 복제 Download PDFInfo
- Publication number
- KR102239731B1 KR102239731B1 KR1020170150384A KR20170150384A KR102239731B1 KR 102239731 B1 KR102239731 B1 KR 102239731B1 KR 1020170150384 A KR1020170150384 A KR 1020170150384A KR 20170150384 A KR20170150384 A KR 20170150384A KR 102239731 B1 KR102239731 B1 KR 102239731B1
- Authority
- KR
- South Korea
- Prior art keywords
- template
- substrate
- back pressure
- pressure
- active area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000010076 replication Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 246
- 238000012937 correction Methods 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000001459 lithography Methods 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 13
- 238000009826 distribution Methods 0.000 claims description 8
- 239000012530 fluid Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000013519 translation Methods 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- 230000000379 polymerizing effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 8
- 238000005452 bending Methods 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000005350 fused silica glass Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000001127 nanoimprint lithography Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010367 cloning Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 210000001161 mammalian embryo Anatomy 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/58—Measuring, controlling or regulating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
- B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/58—Measuring, controlling or regulating
- B29C2043/5808—Measuring, controlling or regulating pressure or compressing force
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/350,714 | 2016-11-14 | ||
| US15/350,714 US11454883B2 (en) | 2016-11-14 | 2016-11-14 | Template replication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180054477A KR20180054477A (ko) | 2018-05-24 |
| KR102239731B1 true KR102239731B1 (ko) | 2021-04-13 |
Family
ID=62108409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170150384A Active KR102239731B1 (ko) | 2016-11-14 | 2017-11-13 | 템플릿 복제 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11454883B2 (enExample) |
| JP (1) | JP6994911B2 (enExample) |
| KR (1) | KR102239731B1 (enExample) |
| CN (1) | CN108073036B (enExample) |
| SG (1) | SG10201708703TA (enExample) |
| TW (1) | TWI763728B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10627715B2 (en) | 2016-10-31 | 2020-04-21 | Canon Kabushiki Kaisha | Method for separating a nanoimprint template from a substrate |
| US10288999B2 (en) | 2016-12-20 | 2019-05-14 | Canon Kabushiki Kaisha | Methods for controlling extrusions during imprint template replication processes |
| JP7171394B2 (ja) * | 2018-11-29 | 2022-11-15 | キヤノン株式会社 | 成形装置、成形方法、および物品の製造方法 |
| JP7431694B2 (ja) * | 2020-07-28 | 2024-02-15 | キヤノン株式会社 | 情報処理装置、膜形成装置、物品の製造方法、およびプログラム |
| US20220035245A1 (en) * | 2020-07-31 | 2022-02-03 | Applied Materials, Inc. | Nano imprint stamps |
| US12085852B2 (en) | 2021-12-27 | 2024-09-10 | Canon Kabushiki Kaisha | Template, method of forming a template, apparatus and method of manufacturing an article |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040090611A1 (en) * | 2002-11-13 | 2004-05-13 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
| US20040146792A1 (en) * | 2002-12-13 | 2004-07-29 | Molecular Imprints, Inc. | Magnification correction employing out-of-plane distortion of a substrate |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6873087B1 (en) | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
| US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
| US6932934B2 (en) | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
| MY133312A (en) * | 2002-11-13 | 2007-11-30 | Molecular Imprints Inc | A chucking system and method for modulation shapes of substrates |
| US7179396B2 (en) | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
| US7396475B2 (en) | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
| US7157036B2 (en) | 2003-06-17 | 2007-01-02 | Molecular Imprints, Inc | Method to reduce adhesion between a conformable region and a pattern of a mold |
| US7150622B2 (en) | 2003-07-09 | 2006-12-19 | Molecular Imprints, Inc. | Systems for magnification and distortion correction for imprint lithography processes |
| US8076386B2 (en) | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
| JP2007242893A (ja) * | 2006-03-08 | 2007-09-20 | Toshiba Corp | パターン転写方法およびパターン転写装置 |
| US8215946B2 (en) | 2006-05-18 | 2012-07-10 | Molecular Imprints, Inc. | Imprint lithography system and method |
| US20100015270A1 (en) * | 2008-07-15 | 2010-01-21 | Molecular Imprints, Inc. | Inner cavity system for nano-imprint lithography |
| WO2012164992A1 (ja) | 2011-06-03 | 2012-12-06 | パナソニック株式会社 | 電気接点部品 |
| JP2013074115A (ja) | 2011-09-28 | 2013-04-22 | Fujifilm Corp | ナノインプリント装置およびナノインプリント方法、並びに、歪み付与デバイスおよび歪み付与方法 |
| JP2013110162A (ja) | 2011-11-17 | 2013-06-06 | Canon Inc | インプリント装置及び物品の製造方法 |
| JP6107078B2 (ja) * | 2012-11-21 | 2017-04-05 | 大日本印刷株式会社 | インプリントモールドの製造方法、および、パターン形成方法と半導体装置の製造方法 |
| JP6282069B2 (ja) | 2013-09-13 | 2018-02-21 | キヤノン株式会社 | インプリント装置、インプリント方法、検出方法及びデバイス製造方法 |
| KR102305247B1 (ko) | 2013-12-31 | 2021-09-27 | 캐논 나노테크놀로지즈 인코퍼레이티드 | 국부 필드 임프린팅을 위한 비대칭 템플릿 형상 변조 |
| JP6273860B2 (ja) * | 2014-01-27 | 2018-02-07 | 大日本印刷株式会社 | インプリントモールド及び半導体デバイスの製造方法 |
| JP2016042498A (ja) | 2014-08-13 | 2016-03-31 | キヤノン株式会社 | インプリント装置および物品製造方法 |
| US10627715B2 (en) | 2016-10-31 | 2020-04-21 | Canon Kabushiki Kaisha | Method for separating a nanoimprint template from a substrate |
| US10969680B2 (en) | 2016-11-30 | 2021-04-06 | Canon Kabushiki Kaisha | System and method for adjusting a position of a template |
| US10288999B2 (en) | 2016-12-20 | 2019-05-14 | Canon Kabushiki Kaisha | Methods for controlling extrusions during imprint template replication processes |
-
2016
- 2016-11-14 US US15/350,714 patent/US11454883B2/en active Active
-
2017
- 2017-10-24 SG SG10201708703TA patent/SG10201708703TA/en unknown
- 2017-10-26 TW TW106136871A patent/TWI763728B/zh active
- 2017-11-13 KR KR1020170150384A patent/KR102239731B1/ko active Active
- 2017-11-14 CN CN201711118552.2A patent/CN108073036B/zh active Active
- 2017-11-14 JP JP2017219309A patent/JP6994911B2/ja active Active
-
2022
- 2022-08-17 US US17/820,376 patent/US11604409B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040090611A1 (en) * | 2002-11-13 | 2004-05-13 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
| US20040223131A1 (en) | 2002-11-13 | 2004-11-11 | Molecular Imprints, Inc. | Chucking system for modulating shapes of substrates |
| US20070114686A1 (en) | 2002-11-13 | 2007-05-24 | Molecular Imprints, Inc. | Method for expelling gas positioned between a substrate and a mold |
| US20040146792A1 (en) * | 2002-12-13 | 2004-07-29 | Molecular Imprints, Inc. | Magnification correction employing out-of-plane distortion of a substrate |
| US7323130B2 (en) | 2002-12-13 | 2008-01-29 | Molecular Imprints, Inc. | Magnification correction employing out-of-plane distortion of a substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108073036B (zh) | 2022-08-23 |
| KR20180054477A (ko) | 2018-05-24 |
| TWI763728B (zh) | 2022-05-11 |
| JP6994911B2 (ja) | 2022-01-14 |
| CN108073036A (zh) | 2018-05-25 |
| TW201830145A (zh) | 2018-08-16 |
| US11454883B2 (en) | 2022-09-27 |
| US20220390834A1 (en) | 2022-12-08 |
| JP2018082175A (ja) | 2018-05-24 |
| US20180136556A1 (en) | 2018-05-17 |
| SG10201708703TA (en) | 2018-06-28 |
| US11604409B2 (en) | 2023-03-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20171113 |
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| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20190508 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20171113 Comment text: Patent Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20200425 Patent event code: PE09021S01D |
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| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20210122 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20210407 Patent event code: PR07011E01D |
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| PR1002 | Payment of registration fee |
Payment date: 20210408 End annual number: 3 Start annual number: 1 |
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