CN108073036B - 模板复制 - Google Patents

模板复制 Download PDF

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Publication number
CN108073036B
CN108073036B CN201711118552.2A CN201711118552A CN108073036B CN 108073036 B CN108073036 B CN 108073036B CN 201711118552 A CN201711118552 A CN 201711118552A CN 108073036 B CN108073036 B CN 108073036B
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CN
China
Prior art keywords
substrate
template
active area
back pressure
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201711118552.2A
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English (en)
Chinese (zh)
Other versions
CN108073036A (zh
Inventor
崔炳镇
A·切若拉
M·J·迈斯尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN108073036A publication Critical patent/CN108073036A/zh
Application granted granted Critical
Publication of CN108073036B publication Critical patent/CN108073036B/zh
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/58—Measuring, controlling or regulating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/58—Measuring, controlling or regulating
    • B29C2043/5808—Measuring, controlling or regulating pressure or compressing force

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201711118552.2A 2016-11-14 2017-11-14 模板复制 Active CN108073036B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/350,714 2016-11-14
US15/350,714 US11454883B2 (en) 2016-11-14 2016-11-14 Template replication

Publications (2)

Publication Number Publication Date
CN108073036A CN108073036A (zh) 2018-05-25
CN108073036B true CN108073036B (zh) 2022-08-23

Family

ID=62108409

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711118552.2A Active CN108073036B (zh) 2016-11-14 2017-11-14 模板复制

Country Status (6)

Country Link
US (2) US11454883B2 (enExample)
JP (1) JP6994911B2 (enExample)
KR (1) KR102239731B1 (enExample)
CN (1) CN108073036B (enExample)
SG (1) SG10201708703TA (enExample)
TW (1) TWI763728B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10627715B2 (en) 2016-10-31 2020-04-21 Canon Kabushiki Kaisha Method for separating a nanoimprint template from a substrate
US10288999B2 (en) 2016-12-20 2019-05-14 Canon Kabushiki Kaisha Methods for controlling extrusions during imprint template replication processes
JP7171394B2 (ja) * 2018-11-29 2022-11-15 キヤノン株式会社 成形装置、成形方法、および物品の製造方法
JP7431694B2 (ja) * 2020-07-28 2024-02-15 キヤノン株式会社 情報処理装置、膜形成装置、物品の製造方法、およびプログラム
US20220035245A1 (en) * 2020-07-31 2022-02-03 Applied Materials, Inc. Nano imprint stamps
US12085852B2 (en) 2021-12-27 2024-09-10 Canon Kabushiki Kaisha Template, method of forming a template, apparatus and method of manufacturing an article

Citations (5)

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CN102203672A (zh) * 2008-10-23 2011-09-28 分子制模股份有限公司 压印平版印刷术系统和方法
CN103843111A (zh) * 2011-09-28 2014-06-04 富士胶片株式会社 纳米压印装置，纳米压印方法，变形压印器件和变形压印方法
JP2015056589A (ja) * 2013-09-13 2015-03-23 キヤノン株式会社 インプリント装置、インプリント方法、検出方法及びデバイス製造方法
CN105372932A (zh) * 2014-08-13 2016-03-02 佳能株式会社 压印装置、照明光学系统及物品制造方法
CN106030756A (zh) * 2013-12-31 2016-10-12 佳能纳米技术公司 用于局部区域压印的非对称模板形状调节

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US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
MY133312A (en) * 2002-11-13 2007-11-30 Molecular Imprints Inc A chucking system and method for modulation shapes of substrates
MY136129A (en) * 2002-12-13 2008-08-29 Molecular Imprints Inc Magnification correction employing out-of-plane distortion of a substrate
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7150622B2 (en) 2003-07-09 2006-12-19 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
JP2007242893A (ja) * 2006-03-08 2007-09-20 Toshiba Corp パターン転写方法およびパターン転写装置
US20100015270A1 (en) * 2008-07-15 2010-01-21 Molecular Imprints, Inc. Inner cavity system for nano-imprint lithography
WO2012164992A1 (ja) 2011-06-03 2012-12-06 パナソニック株式会社 電気接点部品
JP2013110162A (ja) 2011-11-17 2013-06-06 Canon Inc インプリント装置及び物品の製造方法
JP6107078B2 (ja) * 2012-11-21 2017-04-05 大日本印刷株式会社 インプリントモールドの製造方法、および、パターン形成方法と半導体装置の製造方法
JP6273860B2 (ja) * 2014-01-27 2018-02-07 大日本印刷株式会社 インプリントモールド及び半導体デバイスの製造方法
US10627715B2 (en) 2016-10-31 2020-04-21 Canon Kabushiki Kaisha Method for separating a nanoimprint template from a substrate
US10969680B2 (en) 2016-11-30 2021-04-06 Canon Kabushiki Kaisha System and method for adjusting a position of a template
US10288999B2 (en) 2016-12-20 2019-05-14 Canon Kabushiki Kaisha Methods for controlling extrusions during imprint template replication processes

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102203672A (zh) * 2008-10-23 2011-09-28 分子制模股份有限公司 压印平版印刷术系统和方法
CN103843111A (zh) * 2011-09-28 2014-06-04 富士胶片株式会社 纳米压印装置，纳米压印方法，变形压印器件和变形压印方法
JP2015056589A (ja) * 2013-09-13 2015-03-23 キヤノン株式会社 インプリント装置、インプリント方法、検出方法及びデバイス製造方法
CN106030756A (zh) * 2013-12-31 2016-10-12 佳能纳米技术公司 用于局部区域压印的非对称模板形状调节
CN105372932A (zh) * 2014-08-13 2016-03-02 佳能株式会社 压印装置、照明光学系统及物品制造方法

Also Published As

Publication number Publication date
KR20180054477A (ko) 2018-05-24
TWI763728B (zh) 2022-05-11
JP6994911B2 (ja) 2022-01-14
CN108073036A (zh) 2018-05-25
TW201830145A (zh) 2018-08-16
KR102239731B1 (ko) 2021-04-13
US11454883B2 (en) 2022-09-27
US20220390834A1 (en) 2022-12-08
JP2018082175A (ja) 2018-05-24
US20180136556A1 (en) 2018-05-17
SG10201708703TA (en) 2018-06-28
US11604409B2 (en) 2023-03-14

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