KR102229993B1 - 에칭 방법 및 에칭 장치 - Google Patents

에칭 방법 및 에칭 장치 Download PDF

Info

Publication number
KR102229993B1
KR102229993B1 KR1020190002798A KR20190002798A KR102229993B1 KR 102229993 B1 KR102229993 B1 KR 102229993B1 KR 1020190002798 A KR1020190002798 A KR 1020190002798A KR 20190002798 A KR20190002798 A KR 20190002798A KR 102229993 B1 KR102229993 B1 KR 102229993B1
Authority
KR
South Korea
Prior art keywords
gas
etching
substrate
wafer
iodine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020190002798A
Other languages
English (en)
Korean (ko)
Other versions
KR20190088009A (ko
Inventor
야스오 아사다
다케히코 오리이
겐토 스즈키
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20190088009A publication Critical patent/KR20190088009A/ko
Application granted granted Critical
Publication of KR102229993B1 publication Critical patent/KR102229993B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
KR1020190002798A 2018-01-17 2019-01-09 에칭 방법 및 에칭 장치 Active KR102229993B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2018-005792 2018-01-17
JP2018005792A JP6981267B2 (ja) 2018-01-17 2018-01-17 エッチング方法及びエッチング装置

Publications (2)

Publication Number Publication Date
KR20190088009A KR20190088009A (ko) 2019-07-25
KR102229993B1 true KR102229993B1 (ko) 2021-03-18

Family

ID=67214216

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190002798A Active KR102229993B1 (ko) 2018-01-17 2019-01-09 에칭 방법 및 에칭 장치

Country Status (5)

Country Link
US (1) US20190221440A1 (enExample)
JP (1) JP6981267B2 (enExample)
KR (1) KR102229993B1 (enExample)
CN (1) CN110047747B (enExample)
TW (1) TWI796416B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7345334B2 (ja) * 2019-09-18 2023-09-15 東京エレクトロン株式会社 エッチング方法及び基板処理システム
JP7550534B2 (ja) * 2020-05-15 2024-09-13 東京エレクトロン株式会社 エッチング方法およびエッチング装置
JP7312160B2 (ja) * 2020-12-28 2023-07-20 株式会社アルバック エッチング装置及びエッチング方法
CN115483097B (zh) * 2021-05-31 2025-10-21 东京毅力科创株式会社 基板处理方法和基板处理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5698070A (en) 1991-12-13 1997-12-16 Tokyo Electron Limited Method of etching film formed on semiconductor wafer
US20020004308A1 (en) * 1996-09-16 2002-01-10 Gurtej S. Sandhu Plasmaless dry contact cleaning method using interhalogen compounds
JP2008177209A (ja) 2007-01-16 2008-07-31 Taiyo Nippon Sanso Corp プラズマエッチング方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2548615C2 (de) 1975-10-30 1982-06-03 M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8900 Augsburg Vorrichtung zur Ansteuerung eines durch Fluiddruck, insbesondere pneumatischen Druck, betätigbaren Anlaß- und Bremsventils an einer umsteuerbaren Brennkraftmaschine
DE102008037943B4 (de) * 2008-08-14 2018-04-26 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen und Halbleiterbauelement mit einer Struktur geätzt mittels eines derartigen Verfahrens
JP4968861B2 (ja) * 2009-03-19 2012-07-04 東京エレクトロン株式会社 基板のエッチング方法及びシステム
JP5655296B2 (ja) * 2009-12-01 2015-01-21 セントラル硝子株式会社 エッチングガス
JP6032033B2 (ja) * 2013-02-01 2016-11-24 セントラル硝子株式会社 シリコンのドライエッチング方法
SG10201705926YA (en) 2013-02-06 2017-08-30 Evolva Sa Methods for improved production of rebaudioside d and rebaudioside m
JP6107198B2 (ja) * 2013-02-14 2017-04-05 セントラル硝子株式会社 クリーニングガス及びクリーニング方法
WO2015016149A1 (ja) * 2013-07-29 2015-02-05 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
JP6201496B2 (ja) * 2013-08-02 2017-09-27 セントラル硝子株式会社 Ｉｆ７由来フッ化ヨウ素化合物の回収方法及び回収装置
KR20150060069A (ko) 2013-11-25 2015-06-03 에스티엑스조선해양 주식회사 조립식 비계장치용 고정부재
JP6210039B2 (ja) * 2014-09-24 2017-10-11 セントラル硝子株式会社 付着物の除去方法及びドライエッチング方法
JP6544215B2 (ja) * 2015-01-23 2019-07-17 セントラル硝子株式会社 ドライエッチング方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5698070A (en) 1991-12-13 1997-12-16 Tokyo Electron Limited Method of etching film formed on semiconductor wafer
US20020004308A1 (en) * 1996-09-16 2002-01-10 Gurtej S. Sandhu Plasmaless dry contact cleaning method using interhalogen compounds
JP2008177209A (ja) 2007-01-16 2008-07-31 Taiyo Nippon Sanso Corp プラズマエッチング方法

Also Published As

Publication number Publication date
CN110047747B (zh) 2023-05-23
JP6981267B2 (ja) 2021-12-15
CN110047747A (zh) 2019-07-23
KR20190088009A (ko) 2019-07-25
TWI796416B (zh) 2023-03-21
JP2019125715A (ja) 2019-07-25
US20190221440A1 (en) 2019-07-18
TW201936994A (zh) 2019-09-16

Similar Documents

Publication Publication Date Title
TWI686843B (zh) 基板處理方法及基板處理裝置
KR102229993B1 (ko) 에칭 방법 및 에칭 장치
US11342192B2 (en) Substrate processing method and storage medium
KR102272823B1 (ko) 에칭 방법 및 에칭 장치
JP5809144B2 (ja) 基板処理方法および基板処理装置
TW202030794A (zh) 蝕刻方法、蝕刻裝置以及記憶媒體
TWI710015B (zh) 基板處理方法
TWI733651B (zh) 改質處理方法及半導體裝置之製造方法
CN108701599B (zh) 基板处理方法
TW202113966A (zh) 蝕刻方法及蝕刻裝置
JP5881612B2 (ja) 半導体装置の製造方法および製造装置
KR101725711B1 (ko) 에칭 방법 및 기록 매체
JP2020025070A (ja) エッチング方法およびエッチング装置
JP4762998B2 (ja) 処理方法及び記録媒体
TW202201512A (zh) 蝕刻方法及蝕刻裝置
US20120094498A1 (en) Method for reducing punch-through defects

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20190109

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20200330

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20201026

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20200330

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20201026

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20200520

Comment text: Amendment to Specification, etc.

PX0701 Decision of registration after re-examination

Patent event date: 20201221

Comment text: Decision to Grant Registration

Patent event code: PX07013S01D

Patent event date: 20201118

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

Patent event date: 20201026

Comment text: Decision to Refuse Application

Patent event code: PX07011S01I

Patent event date: 20200520

Comment text: Amendment to Specification, etc.

Patent event code: PX07012R01I

X701 Decision to grant (after re-examination)
GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20210315

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20210315

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20240219

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20250217

Start annual number: 5

End annual number: 5