KR102203551B1 - 기판 적재 구조체 및 플라스마 처리 장치 - Google Patents

기판 적재 구조체 및 플라스마 처리 장치 Download PDF

Info

Publication number
KR102203551B1
KR102203551B1 KR1020190021038A KR20190021038A KR102203551B1 KR 102203551 B1 KR102203551 B1 KR 102203551B1 KR 1020190021038 A KR1020190021038 A KR 1020190021038A KR 20190021038 A KR20190021038 A KR 20190021038A KR 102203551 B1 KR102203551 B1 KR 102203551B1
Authority
KR
South Korea
Prior art keywords
ring member
mounting table
substrate
mounting
distance
Prior art date
Application number
KR1020190021038A
Other languages
English (en)
Korean (ko)
Other versions
KR20190106694A (ko
Inventor
마사토 미나미
와타루 마치야마
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20190106694A publication Critical patent/KR20190106694A/ko
Application granted granted Critical
Publication of KR102203551B1 publication Critical patent/KR102203551B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020190021038A 2018-03-07 2019-02-22 기판 적재 구조체 및 플라스마 처리 장치 KR102203551B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018041125A JP7145625B2 (ja) 2018-03-07 2018-03-07 基板載置構造体およびプラズマ処理装置
JPJP-P-2018-041125 2018-03-07

Publications (2)

Publication Number Publication Date
KR20190106694A KR20190106694A (ko) 2019-09-18
KR102203551B1 true KR102203551B1 (ko) 2021-01-14

Family

ID=67882991

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020190021038A KR102203551B1 (ko) 2018-03-07 2019-02-22 기판 적재 구조체 및 플라스마 처리 장치

Country Status (4)

Country Link
JP (1) JP7145625B2 (zh)
KR (1) KR102203551B1 (zh)
CN (1) CN110246741B (zh)
TW (1) TWI791773B (zh)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3260168B2 (ja) * 1991-07-23 2002-02-25 東京エレクトロン株式会社 プラズマ処理装置
JPH0529270A (ja) * 1991-07-23 1993-02-05 Tokyo Electron Ltd マグネトロンプラズマ処理装置
KR200177296Y1 (ko) * 1997-09-27 2000-04-15 김영환 반도체 식각장비의 챔버
JP5222442B2 (ja) * 2008-02-06 2013-06-26 東京エレクトロン株式会社 基板載置台、基板処理装置及び被処理基板の温度制御方法
JP5227197B2 (ja) * 2008-06-19 2013-07-03 東京エレクトロン株式会社 フォーカスリング及びプラズマ処理装置
JP2010045200A (ja) * 2008-08-13 2010-02-25 Tokyo Electron Ltd フォーカスリング、プラズマ処理装置及びプラズマ処理方法
JP5496630B2 (ja) * 2009-12-10 2014-05-21 東京エレクトロン株式会社 静電チャック装置
JP2011151263A (ja) * 2010-01-22 2011-08-04 Tokyo Electron Ltd エッチング方法、エッチング装置及びリング部材
JP5741124B2 (ja) 2011-03-29 2015-07-01 東京エレクトロン株式会社 プラズマ処理装置
JP2016127185A (ja) * 2015-01-06 2016-07-11 東京エレクトロン株式会社 シールドリングおよび基板載置台
US10153192B2 (en) * 2015-09-25 2018-12-11 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device
JP6556046B2 (ja) * 2015-12-17 2019-08-07 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置

Also Published As

Publication number Publication date
TW201939642A (zh) 2019-10-01
JP7145625B2 (ja) 2022-10-03
CN110246741A (zh) 2019-09-17
KR20190106694A (ko) 2019-09-18
TWI791773B (zh) 2023-02-11
JP2019160843A (ja) 2019-09-19
CN110246741B (zh) 2021-07-30

Similar Documents

Publication Publication Date Title
KR101050641B1 (ko) 기판 처리 장치 및 샤워 헤드
KR102434559B1 (ko) 탑재대 및 플라즈마 처리 장치
US7381291B2 (en) Dual-chamber plasma processing apparatus
KR102352699B1 (ko) 플라즈마 처리 장치
KR102042612B1 (ko) 반도체 프로세싱에서 엣지 링의 열 관리
CN109509694B (zh) 等离子体处理装置和等离子体处理方法
KR101760982B1 (ko) 기판 처리 방법 및 기판 처리 장치
KR101432375B1 (ko) 기판 적재 시스템, 기판 처리 장치, 정전 척 및 기판 냉각 방법
US20120037314A1 (en) Substrate processing apparatus and side wall component
US11551916B2 (en) Sheath and temperature control of a process kit in a substrate processing chamber
US8636873B2 (en) Plasma processing apparatus and structure therein
US11862436B2 (en) Plasma processing apparatus and plasma processing method
KR20210122209A (ko) 기판 처리 장치 및 기판 처리 방법
TW201947659A (zh) 電漿處理裝置及被處理體之搬運方法
WO2015178229A1 (ja) 基板処理装置
KR102061969B1 (ko) 기판 처리 장치
US20210035844A1 (en) Sheath and temperature control of process kit
KR20200103556A (ko) 거치대 및 기판 처리 장치
KR102203551B1 (ko) 기판 적재 구조체 및 플라스마 처리 장치
US11705309B2 (en) Substrate processing method
CN108878245B (zh) 闸阀装置和基板处理系统
CN112992642A (zh) 边缘环和基片处理装置
KR20200115228A (ko) 플라즈마 처리 장치
JP2015128110A (ja) 基板処理装置、シャッタ機構およびプラズマ処理装置
JP4436098B2 (ja) 半導体製造装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant