KR102202849B1 - 에지 필드 임프린트 리소그래피 - Google Patents

에지 필드 임프린트 리소그래피 Download PDF

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Publication number
KR102202849B1
KR102202849B1 KR1020170142104A KR20170142104A KR102202849B1 KR 102202849 B1 KR102202849 B1 KR 102202849B1 KR 1020170142104 A KR1020170142104 A KR 1020170142104A KR 20170142104 A KR20170142104 A KR 20170142104A KR 102202849 B1 KR102202849 B1 KR 102202849B1
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South Korea
Prior art keywords
edge
substrate
imprint lithography
imprint
layer
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KR1020170142104A
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English (en)
Korean (ko)
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KR20180048369A (ko
Inventor
정마오 예
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캐논 가부시끼가이샤
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Publication of KR20180048369A publication Critical patent/KR20180048369A/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/12—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by mechanical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/061—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
    • B05D3/065—After-treatment
    • B05D3/067—Curing or cross-linking the coating
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020170142104A 2016-10-31 2017-10-30 에지 필드 임프린트 리소그래피 Active KR102202849B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/339,281 2016-10-31
US15/339,281 US10549313B2 (en) 2016-10-31 2016-10-31 Edge field imprint lithography

Publications (2)

Publication Number Publication Date
KR20180048369A KR20180048369A (ko) 2018-05-10
KR102202849B1 true KR102202849B1 (ko) 2021-01-14

Family

ID=62020369

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170142104A Active KR102202849B1 (ko) 2016-10-31 2017-10-30 에지 필드 임프린트 리소그래피

Country Status (3)

Country Link
US (1) US10549313B2 (enExample)
JP (1) JP7029272B2 (enExample)
KR (1) KR102202849B1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11614693B2 (en) 2021-06-30 2023-03-28 Canon Kabushiki Kaisha Method of determining the initial contact point for partial fields and method of shaping a surface
JP2023085012A (ja) * 2021-12-08 2023-06-20 キヤノン株式会社 インプリント方法、および物品製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070102844A1 (en) * 2005-11-04 2007-05-10 Asml Netherlands B.V. Imprint lithography
US20070138699A1 (en) 2005-12-21 2007-06-21 Asml Netherlands B.V. Imprint lithography
US20110031650A1 (en) 2009-08-04 2011-02-10 Molecular Imprints, Inc. Adjacent Field Alignment

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US8361371B2 (en) 2008-02-08 2013-01-29 Molecular Imprints, Inc. Extrusion reduction in imprint lithography
US8470188B2 (en) 2008-10-02 2013-06-25 Molecular Imprints, Inc. Nano-imprint lithography templates
US8432548B2 (en) * 2008-11-04 2013-04-30 Molecular Imprints, Inc. Alignment for edge field nano-imprinting
JP6306501B2 (ja) 2011-04-25 2018-04-04 キヤノン ナノテクノロジーズ，インコーポレーテッド テンプレートおよびテンプレートを基板と位置合わせするための方法
JP2013225616A (ja) * 2012-04-23 2013-10-31 Canon Inc インプリント方法、それを用いた物品の製造方法
JP6106949B2 (ja) * 2012-05-16 2017-04-05 大日本印刷株式会社 パターン形成方法
KR102305247B1 (ko) * 2013-12-31 2021-09-27 캐논 나노테크놀로지즈 인코퍼레이티드 국부 필드 임프린팅을 위한 비대칭 템플릿 형상 변조
JP2015133464A (ja) * 2014-01-10 2015-07-23 株式会社東芝 インプリント装置
JP6423641B2 (ja) * 2014-08-05 2018-11-14 キヤノン株式会社 インプリント装置、物品の製造方法及びインプリント方法
US10035296B2 (en) 2016-10-13 2018-07-31 Canon Kabushiki Kaisha Methods for controlling spread of imprint material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070102844A1 (en) * 2005-11-04 2007-05-10 Asml Netherlands B.V. Imprint lithography
US20070138699A1 (en) 2005-12-21 2007-06-21 Asml Netherlands B.V. Imprint lithography
US20110031650A1 (en) 2009-08-04 2011-02-10 Molecular Imprints, Inc. Adjacent Field Alignment

Also Published As

Publication number Publication date
KR20180048369A (ko) 2018-05-10
US10549313B2 (en) 2020-02-04
US20180117626A1 (en) 2018-05-03
JP2018074160A (ja) 2018-05-10
JP7029272B2 (ja) 2022-03-03

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