KR102192566B1 - 스퍼터 증착 소스, 스퍼터 증착 장치, 및 기판 상에 층을 증착하는 방법 - Google Patents

스퍼터 증착 소스, 스퍼터 증착 장치, 및 기판 상에 층을 증착하는 방법 Download PDF

Info

Publication number
KR102192566B1
KR102192566B1 KR1020197020292A KR20197020292A KR102192566B1 KR 102192566 B1 KR102192566 B1 KR 102192566B1 KR 1020197020292 A KR1020197020292 A KR 1020197020292A KR 20197020292 A KR20197020292 A KR 20197020292A KR 102192566 B1 KR102192566 B1 KR 102192566B1
Authority
KR
South Korea
Prior art keywords
electrodes
voltage
sputter deposition
layer
substrate
Prior art date
Application number
KR1020197020292A
Other languages
English (en)
Korean (ko)
Other versions
KR20190094223A (ko
Inventor
현찬 박
안드레아스 클뢰펠
아제이 샘파스 볼로캄
피피 차이
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20190094223A publication Critical patent/KR20190094223A/ko
Application granted granted Critical
Publication of KR102192566B1 publication Critical patent/KR102192566B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1020197020292A 2016-12-19 2016-12-19 스퍼터 증착 소스, 스퍼터 증착 장치, 및 기판 상에 층을 증착하는 방법 KR102192566B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2016/081768 WO2018113904A1 (en) 2016-12-19 2016-12-19 Sputter deposition source and method of depositing a layer on a substrate

Publications (2)

Publication Number Publication Date
KR20190094223A KR20190094223A (ko) 2019-08-12
KR102192566B1 true KR102192566B1 (ko) 2020-12-18

Family

ID=57614364

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197020292A KR102192566B1 (ko) 2016-12-19 2016-12-19 스퍼터 증착 소스, 스퍼터 증착 장치, 및 기판 상에 층을 증착하는 방법

Country Status (5)

Country Link
JP (1) JP6966552B2 (ja)
KR (1) KR102192566B1 (ja)
CN (1) CN110050325B (ja)
TW (1) TWI744436B (ja)
WO (1) WO2018113904A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111893441A (zh) * 2019-05-06 2020-11-06 领凡新能源科技(北京)有限公司 膜层的制备方法和反应腔室
CN110944442B (zh) * 2019-12-02 2020-12-18 珠海格力电器股份有限公司 一种互补等离子发生电路、控制方法及等离子发生器
EP4118676A1 (en) * 2020-03-13 2023-01-18 Evatec AG Apparatus and process with a dc-pulsed cathode array
CN111206229B (zh) * 2020-03-16 2024-06-18 杭州朗旭新材料科技有限公司 一种薄膜制备设备和薄膜制备方法
CN114651085A (zh) * 2020-05-11 2022-06-21 应用材料公司 在基板上沉积薄膜晶体管层的方法和溅射沉积设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2459103A (en) * 2008-04-09 2009-10-14 Univ Sheffield Biased plasma assisted processing
US20110036707A1 (en) * 2008-05-26 2011-02-17 Yoshikuni Horishita Sputtering method
WO2016180448A1 (en) * 2015-05-08 2016-11-17 Applied Materials, Inc. Method of manufacturing a layer stack for display manufacturing and apparatus therefore

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5932116A (en) * 1995-06-05 1999-08-03 Tohoku Unicom Co., Ltd. Power supply for multi-electrode discharge
JP3096258B2 (ja) * 1997-07-18 2000-10-10 芝浦メカトロニクス株式会社 毎葉式マグネトロンスパッタ装置
DK1970465T3 (da) * 2007-03-13 2013-10-07 Jds Uniphase Corp Fremgangsmåde og system til katodeforstøvning til aflejring af et lag, der består af en blanding af materialer og har et på forhånd defineret brydningsindeks
JP5339965B2 (ja) * 2009-03-02 2013-11-13 株式会社アルバック スパッタリング装置用の交流電源
US20150136585A1 (en) * 2012-06-01 2015-05-21 Applied Materials, Inc. Method for sputtering for processes with a pre-stabilized plasma

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2459103A (en) * 2008-04-09 2009-10-14 Univ Sheffield Biased plasma assisted processing
US20110036707A1 (en) * 2008-05-26 2011-02-17 Yoshikuni Horishita Sputtering method
WO2016180448A1 (en) * 2015-05-08 2016-11-17 Applied Materials, Inc. Method of manufacturing a layer stack for display manufacturing and apparatus therefore

Also Published As

Publication number Publication date
TWI744436B (zh) 2021-11-01
CN110050325B (zh) 2021-11-09
WO2018113904A1 (en) 2018-06-28
JP2020503436A (ja) 2020-01-30
JP6966552B2 (ja) 2021-11-17
CN110050325A (zh) 2019-07-23
TW201827634A (zh) 2018-08-01
KR20190094223A (ko) 2019-08-12

Similar Documents

Publication Publication Date Title
KR102192566B1 (ko) 스퍼터 증착 소스, 스퍼터 증착 장치, 및 기판 상에 층을 증착하는 방법
US20150136585A1 (en) Method for sputtering for processes with a pre-stabilized plasma
US20100181191A1 (en) Sputtering apparatus
US20210355578A1 (en) Method of coating a substrate and coating apparatus for coating a substrate
CN108884556B (zh) 用于涂布基板的方法及涂布机
WO2016180443A1 (en) Radio frequency (rf) - sputter deposition source, deposition apparatus and method of operating thereof
WO2018068833A1 (en) Magnet arrangement for a sputter deposition source and magnetron sputter deposition source
WO2018095514A1 (en) Apparatus and method for layer deposition on a substrate
JP2004115841A (ja) マグネトロンスパッタ電極、成膜装置及び成膜方法
KR102140598B1 (ko) 스퍼터 증착 소스, 스퍼터 증착 장치 및 스퍼터 증착 소스를 동작시키는 방법
KR102171588B1 (ko) 스퍼터링 장치 및 방법
JP7369411B1 (ja) スパッタリング成膜源および成膜装置
JP2018519427A (ja) スパッタ堆積プロセス中に少なくとも１つの基板を支持するためのキャリア、少なくとも１つの基板上にスパッタ堆積するための装置、および少なくとも１つの基板上にスパッタ堆積する方法
WO2022078592A1 (en) Sputter deposition source, deposition apparatus and method of coating a substrate
WO2021228359A1 (en) Method of depositing layers of a thin-film transistor on a substrate and sputter deposition apparatus
KR20100104005A (ko) 플라즈마를 이용한 표면처리 장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right