KR102176147B1 - 연마용 조성물 - Google Patents

연마용 조성물 Download PDF

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Publication number
KR102176147B1
KR102176147B1 KR1020157022114A KR20157022114A KR102176147B1 KR 102176147 B1 KR102176147 B1 KR 102176147B1 KR 1020157022114 A KR1020157022114 A KR 1020157022114A KR 20157022114 A KR20157022114 A KR 20157022114A KR 102176147 B1 KR102176147 B1 KR 102176147B1
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KR
South Korea
Prior art keywords
polishing
colloidal silica
silica particles
acid
polishing composition
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KR1020157022114A
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English (en)
Korean (ko)
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KR20150120980A (ko
Inventor
준 이토
가즈토시 홋타
히로야스 스기야마
히토시 모리나가
Original Assignee
가부시키가이샤 후지미인코퍼레이티드
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Publication of KR20150120980A publication Critical patent/KR20150120980A/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020157022114A 2013-02-20 2014-02-07 연마용 조성물 Active KR102176147B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2013-031228 2013-02-20
JP2013031228 2013-02-20
JP2013177027A JP6436517B2 (ja) 2013-02-20 2013-08-28 研磨用組成物
JPJP-P-2013-177027 2013-08-28
PCT/JP2014/052956 WO2014129328A1 (ja) 2013-02-20 2014-02-07 研磨用組成物

Publications (2)

Publication Number Publication Date
KR20150120980A KR20150120980A (ko) 2015-10-28
KR102176147B1 true KR102176147B1 (ko) 2020-11-10

Family

ID=51391124

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157022114A Active KR102176147B1 (ko) 2013-02-20 2014-02-07 연마용 조성물

Country Status (7)

Country Link
US (1) US9879156B2 (https=)
JP (1) JP6436517B2 (https=)
KR (1) KR102176147B1 (https=)
CN (1) CN105027267A (https=)
RU (1) RU2646938C2 (https=)
TW (1) TWI576420B (https=)
WO (1) WO2014129328A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6506913B2 (ja) * 2014-03-31 2019-04-24 ニッタ・ハース株式会社 研磨用組成物及び研磨方法
WO2016033417A1 (en) * 2014-08-29 2016-03-03 Cabot Microelectronics Corporation Composition and method for polishing a sapphire surface
WO2016060113A1 (ja) * 2014-10-14 2016-04-21 花王株式会社 サファイア板用研磨液組成物
JP6570382B2 (ja) * 2015-09-09 2019-09-04 デンカ株式会社 研磨用シリカ添加剤及びそれを用いた方法
US9916985B2 (en) * 2015-10-14 2018-03-13 International Business Machines Corporation Indium phosphide smoothing and chemical mechanical planarization processes
CN107011804A (zh) * 2016-01-28 2017-08-04 浙江晶圣美纳米科技有限公司 一种蓝宝石化学机械抛光液
WO2018116890A1 (ja) * 2016-12-22 2018-06-28 ニッタ・ハース株式会社 研磨用組成物
RU2635132C1 (ru) * 2017-02-20 2017-11-09 Общество с ограниченной ответственностью "Научно-технический центр "Компас" (ООО "НТЦ "Компас") Полировальная суспензия для сапфировых подложек
JP6864519B2 (ja) * 2017-03-31 2021-04-28 株式会社フジミインコーポレーテッド 研磨用組成物、磁気ディスク基板の製造方法および磁気ディスクの研磨方法
EP3792327B1 (en) * 2019-09-11 2025-05-28 Fujimi Incorporated Polishing composition, polishing method and method for manufacturing semiconductor substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011021599A1 (ja) * 2009-08-19 2011-02-24 日立化成工業株式会社 Ｃｍｐ研磨液及び研磨方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4132432B2 (ja) * 1999-07-02 2008-08-13 日産化学工業株式会社 研磨用組成物
WO2004053456A2 (en) * 2002-12-09 2004-06-24 Corning Incorporated Method using multi-component colloidal abrasives for cmp processing of semiconductor and optical materials
US20060196849A1 (en) * 2005-03-04 2006-09-07 Kevin Moeggenborg Composition and method for polishing a sapphire surface
JP2008044078A (ja) * 2006-08-18 2008-02-28 Sumitomo Metal Mining Co Ltd サファイア基板の研磨方法
KR101159658B1 (ko) * 2006-12-28 2012-06-25 생-고뱅 세라믹스 앤드 플라스틱스, 인코포레이티드 사파이어 기판 연마 방법
EP2215175A1 (en) 2007-10-05 2010-08-11 Saint-Gobain Ceramics & Plastics, Inc. Polishing of sapphire with composite slurries

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011021599A1 (ja) * 2009-08-19 2011-02-24 日立化成工業株式会社 Ｃｍｐ研磨液及び研磨方法

Also Published As

Publication number Publication date
TW201446952A (zh) 2014-12-16
JP6436517B2 (ja) 2018-12-12
JP2014187348A (ja) 2014-10-02
WO2014129328A1 (ja) 2014-08-28
RU2015139807A (ru) 2017-03-27
CN105027267A (zh) 2015-11-04
RU2646938C2 (ru) 2018-03-12
US20160002500A1 (en) 2016-01-07
US9879156B2 (en) 2018-01-30
KR20150120980A (ko) 2015-10-28
TWI576420B (zh) 2017-04-01

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