KR102160070B1 - 근자외선 발광 소자 - Google Patents

근자외선 발광 소자 Download PDF

Info

Publication number
KR102160070B1
KR102160070B1 KR1020130128201A KR20130128201A KR102160070B1 KR 102160070 B1 KR102160070 B1 KR 102160070B1 KR 1020130128201 A KR1020130128201 A KR 1020130128201A KR 20130128201 A KR20130128201 A KR 20130128201A KR 102160070 B1 KR102160070 B1 KR 102160070B1
Authority
KR
South Korea
Prior art keywords
layer
type contact
algan
emitting device
light emitting
Prior art date
Application number
KR1020130128201A
Other languages
English (en)
Korean (ko)
Other versions
KR20150048337A (ko
Inventor
한창석
김화목
최효식
황정환
박기연
Original Assignee
서울바이오시스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울바이오시스 주식회사 filed Critical 서울바이오시스 주식회사
Priority to KR1020130128201A priority Critical patent/KR102160070B1/ko
Priority to US14/526,110 priority patent/US9312447B2/en
Priority to CN201410587650.0A priority patent/CN104576855B/zh
Priority to CN201420631593.7U priority patent/CN204179101U/zh
Publication of KR20150048337A publication Critical patent/KR20150048337A/ko
Priority to US15/096,252 priority patent/US10164150B2/en
Application granted granted Critical
Publication of KR102160070B1 publication Critical patent/KR102160070B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
KR1020130128201A 2012-03-29 2013-10-28 근자외선 발광 소자 KR102160070B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020130128201A KR102160070B1 (ko) 2013-10-28 2013-10-28 근자외선 발광 소자
US14/526,110 US9312447B2 (en) 2012-03-29 2014-10-28 Near UV light emitting device
CN201410587650.0A CN104576855B (zh) 2013-10-28 2014-10-28 近紫外光发射装置
CN201420631593.7U CN204179101U (zh) 2013-10-28 2014-10-28 近紫外光发射装置
US15/096,252 US10164150B2 (en) 2012-03-29 2016-04-11 Near UV light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020130128201A KR102160070B1 (ko) 2013-10-28 2013-10-28 근자외선 발광 소자

Publications (2)

Publication Number Publication Date
KR20150048337A KR20150048337A (ko) 2015-05-07
KR102160070B1 true KR102160070B1 (ko) 2020-09-25

Family

ID=52567886

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130128201A KR102160070B1 (ko) 2012-03-29 2013-10-28 근자외선 발광 소자

Country Status (2)

Country Link
KR (1) KR102160070B1 (zh)
CN (2) CN104576855B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105914273B (zh) * 2016-05-09 2018-07-31 华灿光电(苏州）有限公司 一种红黄光发光二极管外延片及其制备方法
CN115101641A (zh) * 2016-06-24 2022-09-23 苏州立琻半导体有限公司 半导体器件和包括半导体器件的半导体器件封装
CN109360879A (zh) * 2018-11-27 2019-02-19 华灿光电（浙江）有限公司 一种发光二极管的外延片及其制备方法
CN109768130A (zh) * 2018-12-28 2019-05-17 华灿光电（浙江）有限公司 一种氮化镓基发光二极管外延片及其制作方法
CN111816742A (zh) * 2020-07-27 2020-10-23 中国科学院半导体研究所 用于可见光通信的GaN基LED外延结构及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148507A (ja) 1999-03-29 2001-05-29 Nichia Chem Ind Ltd 窒化物半導体素子
JP2003115642A (ja) 2001-03-28 2003-04-18 Nichia Chem Ind Ltd 窒化物半導体素子

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3599841B2 (ja) * 1995-08-24 2004-12-08 三洋電機株式会社 半導体レーザ素子
JP3366188B2 (ja) * 1996-05-21 2003-01-14 日亜化学工業株式会社 窒化物半導体素子
CN1112087C (zh) * 1996-11-19 2003-06-18 洛氏两合公司里塔尔工厂 带有装配板的开关柜
JP4032636B2 (ja) * 1999-12-13 2008-01-16 日亜化学工業株式会社 発光素子
EP1453160B1 (en) * 2001-11-05 2008-02-27 Nichia Corporation Semiconductor element
JP5641173B2 (ja) * 2009-02-27 2014-12-17 独立行政法人理化学研究所 光半導体素子及びその製造方法
KR20130013968A (ko) * 2011-07-29 2013-02-06 엘지이노텍 주식회사 발광소자
US9224913B2 (en) * 2012-03-29 2015-12-29 Seoul Viosys Co., Ltd. Near UV light emitting device
KR101997020B1 (ko) * 2012-03-29 2019-07-08 서울바이오시스 주식회사 근자외선 발광 소자

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001148507A (ja) 1999-03-29 2001-05-29 Nichia Chem Ind Ltd 窒化物半導体素子
JP2003115642A (ja) 2001-03-28 2003-04-18 Nichia Chem Ind Ltd 窒化物半導体素子

Also Published As

Publication number Publication date
CN204179101U (zh) 2015-02-25
CN104576855A (zh) 2015-04-29
KR20150048337A (ko) 2015-05-07
CN104576855B (zh) 2018-04-13

Similar Documents

Publication Publication Date Title
KR102246648B1 (ko) 자외선 발광 다이오드
US9911898B2 (en) Ultraviolet light-emitting device
KR101017396B1 (ko) 변조도핑층을 갖는 발광 다이오드
JP6587673B2 (ja) 発光素子
US10177273B2 (en) UV light emitting device
US9224913B2 (en) Near UV light emitting device
US10164150B2 (en) Near UV light emitting device
US9312447B2 (en) Near UV light emitting device
KR102160070B1 (ko) 근자외선 발광 소자
KR20130141945A (ko) 전자 차단층을 갖는 발광 소자
KR20140002910A (ko) 근자외선 발광 소자
KR20130129683A (ko) 그레이드 초격자 구조의 전자 차단층을 갖는 반도체 발광 소자
KR100979701B1 (ko) 변조도핑층을 갖는 발광 다이오드
KR20100049451A (ko) 질화물 반도체 소자
KR101507130B1 (ko) 초격자층을 갖는 발광 다이오드
KR20100024154A (ko) 발광 다이오드
KR20100077264A (ko) 인듐질화물을 포함하는 발광 다이오드
KR101583276B1 (ko) 전류 분산을 위한 다층 구조체를 갖는 발광 다이오드
KR20110133239A (ko) 신뢰성 있는 발광 다이오드
KR20110100569A (ko) 질화물 반도체 소자
KR20110133240A (ko) 신뢰성 있는 발광 다이오드 및 그것을 제조하는 방법
KR102600002B1 (ko) 반도체 발광 소자
KR20170028200A (ko) 깊은 레벨 전자의 재결합을 이용하는 발광 다이오드 및 그것을 제조하는 방법
KR101955309B1 (ko) 전자 차단층을 갖는 반도체 발광 소자
KR20130069157A (ko) 발광소자

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant