KR102142178B1 - 재사용 가능한 서브구조체를 포함하는 반도체 디바이스 모델 - Google Patents

재사용 가능한 서브구조체를 포함하는 반도체 디바이스 모델 Download PDF

Info

Publication number
KR102142178B1
KR102142178B1 KR1020167020031A KR20167020031A KR102142178B1 KR 102142178 B1 KR102142178 B1 KR 102142178B1 KR 1020167020031 A KR1020167020031 A KR 1020167020031A KR 20167020031 A KR20167020031 A KR 20167020031A KR 102142178 B1 KR102142178 B1 KR 102142178B1
Authority
KR
South Korea
Prior art keywords
model
measurement
code
causing
reusable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020167020031A
Other languages
English (en)
Korean (ko)
Other versions
KR20160108365A (ko
Inventor
조나단 일로레타
매튜 에이 라핀
레오니드 포슬라프스키
토르스텐 카악
치앙 자오
리에콴 리
Original Assignee
케이엘에이 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 케이엘에이 코포레이션 filed Critical 케이엘에이 코포레이션
Publication of KR20160108365A publication Critical patent/KR20160108365A/ko
Application granted granted Critical
Publication of KR102142178B1 publication Critical patent/KR102142178B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L22/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H01L22/30—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G01N2021/213—Spectrometric ellipsometry

Landscapes

  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
KR1020167020031A 2014-01-15 2015-01-14 재사용 가능한 서브구조체를 포함하는 반도체 디바이스 모델 Active KR102142178B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461927832P 2014-01-15 2014-01-15
US61/927,832 2014-01-15
US14/594,917 2015-01-12
US14/594,917 US9553033B2 (en) 2014-01-15 2015-01-12 Semiconductor device models including re-usable sub-structures
PCT/US2015/011487 WO2015109035A1 (en) 2014-01-15 2015-01-14 Semiconductor device models including re-usable sub-structures

Publications (2)

Publication Number Publication Date
KR20160108365A KR20160108365A (ko) 2016-09-19
KR102142178B1 true KR102142178B1 (ko) 2020-08-06

Family

ID=53521602

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167020031A Active KR102142178B1 (ko) 2014-01-15 2015-01-14 재사용 가능한 서브구조체를 포함하는 반도체 디바이스 모델

Country Status (7)

Country Link
US (1) US9553033B2 (https=)
JP (1) JP6379206B2 (https=)
KR (1) KR102142178B1 (https=)
CN (1) CN105917454B (https=)
IL (1) IL246566B (https=)
TW (1) TWI638993B (https=)
WO (1) WO2015109035A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130245985A1 (en) * 2012-03-14 2013-09-19 Kla-Tencor Corporation Calibration Of An Optical Metrology System For Critical Dimension Application Matching
US10340165B2 (en) * 2016-03-29 2019-07-02 Kla-Tencor Corporation Systems and methods for automated multi-zone detection and modeling
US10775323B2 (en) * 2016-10-18 2020-09-15 Kla-Tencor Corporation Full beam metrology for X-ray scatterometry systems
US10817999B2 (en) * 2017-07-18 2020-10-27 Kla Corporation Image-based overlay metrology and monitoring using through-focus imaging
WO2019173170A1 (en) * 2018-03-05 2019-09-12 Kla-Tencor Corporation Visualization of three-dimensional semiconductor structures
US10794839B2 (en) 2019-02-22 2020-10-06 Kla Corporation Visualization of three-dimensional semiconductor structures
US11036898B2 (en) * 2018-03-15 2021-06-15 Kla-Tencor Corporation Measurement models of nanowire semiconductor structures based on re-useable sub-structures
US11060846B2 (en) 2018-12-19 2021-07-13 Kla Corporation Scatterometry based methods and systems for measurement of strain in semiconductor structures
US11060982B2 (en) 2019-03-17 2021-07-13 Kla Corporation Multi-dimensional model of optical dispersion
US11460418B2 (en) 2019-08-26 2022-10-04 Kla Corporation Methods and systems for semiconductor metrology based on wavelength resolved soft X-ray reflectometry
US11698251B2 (en) 2020-01-07 2023-07-11 Kla Corporation Methods and systems for overlay measurement based on soft X-ray Scatterometry
US12013355B2 (en) 2020-12-17 2024-06-18 Kla Corporation Methods and systems for compact, small spot size soft x-ray scatterometry
US11868689B2 (en) * 2021-10-11 2024-01-09 KLA Corp. Systems and methods for setting up a physics-based model

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090037013A1 (en) 2007-05-02 2009-02-05 Mks Instruments, Inc. Automated Model Building and Model Updating
US20090306941A1 (en) 2006-05-15 2009-12-10 Michael Kotelyanskii Structure Model description and use for scatterometry-based semiconductor manufacturing process metrology
US20130110477A1 (en) 2011-10-31 2013-05-02 Stilian Pandev Process variation-based model optimization for metrology

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608526A (en) 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US5859424A (en) 1997-04-08 1999-01-12 Kla-Tencor Corporation Apodizing filter system useful for reducing spot size in optical measurements and other applications
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US7478019B2 (en) 2005-01-26 2009-01-13 Kla-Tencor Corporation Multiple tool and structure analysis
US7355728B2 (en) 2005-06-16 2008-04-08 Timbre Technologies, Inc. Optical metrology model optimization for repetitive structures
US7567351B2 (en) 2006-02-02 2009-07-28 Kla-Tencor Corporation High resolution monitoring of CD variations
US7484198B2 (en) * 2006-02-27 2009-01-27 Synopsys, Inc. Managing integrated circuit stress using dummy diffusion regions
US7518740B2 (en) * 2006-07-10 2009-04-14 Tokyo Electron Limited Evaluating a profile model to characterize a structure to be examined using optical metrology
WO2008077100A2 (en) * 2006-12-19 2008-06-26 Kla-Tencor Corporation Systems and methods for creating inspection recipes
US7895548B2 (en) * 2007-10-26 2011-02-22 Synopsys, Inc. Filler cells for design optimization in a place-and-route system
GB0818308D0 (en) * 2008-10-07 2008-11-12 Helic S A Expert system-based integrated inductor synthesis and optimization
US8214771B2 (en) 2009-01-08 2012-07-03 Kla-Tencor Corporation Scatterometry metrology target design optimization
US8381140B2 (en) * 2011-02-11 2013-02-19 Tokyo Electron Limited Wide process range library for metrology
US8468471B2 (en) * 2011-09-23 2013-06-18 Kla-Tencor Corp. Process aware metrology
US8879073B2 (en) 2012-02-24 2014-11-04 Kla-Tencor Corporation Optical metrology using targets with field enhancement elements
JP5969915B2 (ja) * 2012-05-28 2016-08-17 株式会社日立ハイテクノロジーズ 微細パターンの断面形状測定方法及びその装置
US9581430B2 (en) 2012-10-19 2017-02-28 Kla-Tencor Corporation Phase characterization of targets
US10769320B2 (en) 2012-12-18 2020-09-08 Kla-Tencor Corporation Integrated use of model-based metrology and a process model
US9291554B2 (en) 2013-02-05 2016-03-22 Kla-Tencor Corporation Method of electromagnetic modeling of finite structures and finite illumination for metrology and inspection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090306941A1 (en) 2006-05-15 2009-12-10 Michael Kotelyanskii Structure Model description and use for scatterometry-based semiconductor manufacturing process metrology
US20090037013A1 (en) 2007-05-02 2009-02-05 Mks Instruments, Inc. Automated Model Building and Model Updating
US20130110477A1 (en) 2011-10-31 2013-05-02 Stilian Pandev Process variation-based model optimization for metrology

Also Published As

Publication number Publication date
IL246566B (en) 2019-03-31
TW201531694A (zh) 2015-08-16
US20150199463A1 (en) 2015-07-16
TWI638993B (zh) 2018-10-21
CN105917454B (zh) 2018-08-24
KR20160108365A (ko) 2016-09-19
JP2017507479A (ja) 2017-03-16
JP6379206B2 (ja) 2018-08-22
US9553033B2 (en) 2017-01-24
CN105917454A (zh) 2016-08-31
WO2015109035A1 (en) 2015-07-23

Similar Documents

Publication Publication Date Title
KR102142178B1 (ko) 재사용 가능한 서브구조체를 포함하는 반도체 디바이스 모델
JP6783298B2 (ja) モデルベースのホットスポットモニタリング
KR102415145B1 (ko) 다중 패턴화 파라미터의 측정
EP2979297B1 (en) Statistical model-based metrology
KR102274476B1 (ko) 다중 처리 단계로부터의 정보로 반도체 계측
KR102245698B1 (ko) 다중 패턴화 프로세스의 계측
KR102245695B1 (ko) 모델-기반 계측 및 프로세스 모델의 통합 사용
US8843875B2 (en) Measurement model optimization based on parameter variations across a wafer
KR102013483B1 (ko) 파라미터 추적을 위한 계측 시스템 최적화
KR20160002968A (ko) 온-디바이스 계측
TW202018430A (zh) 用於基於影像之疊對量測之信號回應計量
KR20240060748A (ko) 스캐닝 조건부 모델에 기반한 반도체 프로파일 측정

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
A302 Request for accelerated examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 6

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000