KR102126232B1 - 평가 방법, 노광 방법, 및 물품의 제조 방법 - Google Patents

평가 방법, 노광 방법, 및 물품의 제조 방법 Download PDF

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Publication number
KR102126232B1
KR102126232B1 KR1020160172663A KR20160172663A KR102126232B1 KR 102126232 B1 KR102126232 B1 KR 102126232B1 KR 1020160172663 A KR1020160172663 A KR 1020160172663A KR 20160172663 A KR20160172663 A KR 20160172663A KR 102126232 B1 KR102126232 B1 KR 102126232B1
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KR
South Korea
Prior art keywords
optical system
projection optical
information
value
evaluation
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KR1020160172663A
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English (en)
Korean (ko)
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KR20170077041A (ko
Inventor
도루 오쿠보
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캐논 가부시끼가이샤
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Publication of KR20170077041A publication Critical patent/KR20170077041A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
KR1020160172663A 2015-12-25 2016-12-16 평가 방법, 노광 방법, 및 물품의 제조 방법 KR102126232B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2015-254866 2015-12-25
JP2015254866A JP6661371B2 (ja) 2015-12-25 2015-12-25 評価方法、露光方法、および物品の製造方法

Publications (2)

Publication Number Publication Date
KR20170077041A KR20170077041A (ko) 2017-07-05
KR102126232B1 true KR102126232B1 (ko) 2020-06-24

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KR1020160172663A KR102126232B1 (ko) 2015-12-25 2016-12-16 평가 방법, 노광 방법, 및 물품의 제조 방법

Country Status (4)

Country Link
JP (1) JP6661371B2 (zh)
KR (1) KR102126232B1 (zh)
CN (1) CN106919004B (zh)
TW (1) TWI643029B (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6978926B2 (ja) * 2017-12-18 2021-12-08 キヤノン株式会社 計測方法、計測装置、露光装置、および物品製造方法
JP7105582B2 (ja) * 2018-03-09 2022-07-25 キヤノン株式会社 決定方法、露光方法、露光装置、物品の製造方法及びプログラム
JP7357488B2 (ja) * 2019-09-04 2023-10-06 キヤノン株式会社 露光装置、および物品製造方法

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WO2002050506A1 (fr) 2000-12-18 2002-06-27 Nikon Corporation Appareil de mesure de surface d'onde et son utilisation, procede et appareil pour determiner des caracteristiques de mise au point, procede et appareil pour corriger des caracteristiques de mise au point, procede pour gerer des caracteristiques de mise au point, et procede et appareil d'exposition
JP2003215423A (ja) 2002-01-28 2003-07-30 Nikon Corp 光学系の製造方法，投影光学装置および露光装置
JP2004319397A (ja) 2003-04-18 2004-11-11 Toyota Motor Corp 車両用赤外線映像装置及びハイビームヘッドランプ構造

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JPH068926B2 (ja) * 1984-08-24 1994-02-02 キヤノン株式会社 面位置検出方法
JPH10284414A (ja) * 1997-04-10 1998-10-23 Nikon Corp 結像位置検出装置及び半導体デバイスの製造方法
JPH11260703A (ja) * 1998-03-16 1999-09-24 Sony Corp 露光装置および露光装置の投影レンズの評価方法
JP4649717B2 (ja) 1999-10-01 2011-03-16 株式会社ニコン 露光方法及び露光装置、デバイス製造方法
JP2002022609A (ja) * 2000-07-10 2002-01-23 Canon Inc 投影露光装置
US6778275B2 (en) * 2002-02-20 2004-08-17 Micron Technology, Inc. Aberration mark and method for estimating overlay error and optical aberrations
US6897940B2 (en) * 2002-06-21 2005-05-24 Nikon Corporation System for correcting aberrations and distortions in EUV lithography
US7158215B2 (en) * 2003-06-30 2007-01-02 Asml Holding N.V. Large field of view protection optical system with aberration correctability for flat panel displays
US7242475B2 (en) * 2004-03-25 2007-07-10 Asml Netherlands B.V. Method of determining aberration of a projection system of a lithographic apparatus
CN1312464C (zh) * 2004-04-29 2007-04-25 上海微电子装备有限公司 成像光学系统像差的现场测量方法
CN101174092B (zh) * 2006-10-30 2010-10-06 上海华虹Nec电子有限公司 用于监控镜头慧差导致成像畸变的方法及其透镜成像系统
CN101221372A (zh) * 2008-01-25 2008-07-16 中国科学院上海光学精密机械研究所 光刻机投影物镜偶像差原位检测系统及检测方法
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US8760625B2 (en) * 2010-07-30 2014-06-24 Asml Netherlands B.V. Lithographic apparatus, aberration detector and device manufacturing method
CN102681358B (zh) * 2012-04-18 2014-02-12 中国科学院上海光学精密机械研究所 基于空间像检测的投影物镜波像差原位测量方法

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
WO2002050506A1 (fr) 2000-12-18 2002-06-27 Nikon Corporation Appareil de mesure de surface d'onde et son utilisation, procede et appareil pour determiner des caracteristiques de mise au point, procede et appareil pour corriger des caracteristiques de mise au point, procede pour gerer des caracteristiques de mise au point, et procede et appareil d'exposition
JP2003215423A (ja) 2002-01-28 2003-07-30 Nikon Corp 光学系の製造方法，投影光学装置および露光装置
JP2004319397A (ja) 2003-04-18 2004-11-11 Toyota Motor Corp 車両用赤外線映像装置及びハイビームヘッドランプ構造

Also Published As

Publication number Publication date
CN106919004A (zh) 2017-07-04
CN106919004B (zh) 2019-11-26
KR20170077041A (ko) 2017-07-05
JP6661371B2 (ja) 2020-03-11
TWI643029B (zh) 2018-12-01
JP2017116867A (ja) 2017-06-29
TW201723678A (zh) 2017-07-01

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