KR102077618B1 - 금속-패시베이션화 cmp 조성물 및 방법 - Google Patents

금속-패시베이션화 cmp 조성물 및 방법 Download PDF

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KR102077618B1
KR102077618B1 KR1020137021062A KR20137021062A KR102077618B1 KR 102077618 B1 KR102077618 B1 KR 102077618B1 KR 1020137021062 A KR1020137021062 A KR 1020137021062A KR 20137021062 A KR20137021062 A KR 20137021062A KR 102077618 B1 KR102077618 B1 KR 102077618B1
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composition
film
delete delete
polishing
metal
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Korean (ko)
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KR20140047015A (ko
Inventor
제이슨 켈러
판카지 싱
블라스타 브루식
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캐보트 마이크로일렉트로닉스 코포레이션
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Priority claimed from US13/004,113 external-priority patent/US8435421B2/en
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K8/00Compositions for drilling of boreholes or wells; Compositions for treating boreholes or wells, e.g. for completion or for remedial operations
    • C09K8/52Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning
    • C09K8/528Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning inorganic depositions, e.g. sulfates or carbonates
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1409Abrasive particles per se
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00Brightening metals by chemical means
    • C23F3/04Heavy metals
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00Brightening metals by chemical means
    • C23F3/04Heavy metals
    • C23F3/06Heavy metals with acidic solutions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/402Chemomechanical polishing [CMP] of semiconductor materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40Chemomechanical polishing [CMP]
    • H10P52/403Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020137021062A 2011-01-11 2012-01-10 금속-패시베이션화 cmp 조성물 및 방법 Active KR102077618B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/004,113 2011-01-11
US13/004,113 US8435421B2 (en) 2007-11-27 2011-01-11 Metal-passivating CMP compositions and methods
PCT/US2012/020737 WO2012096931A2 (en) 2011-01-11 2012-01-10 Metal-passivating cmp compositions and methods

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187031790A Division KR102017133B1 (ko) 2011-01-11 2012-01-10 금속-패시베이션화 cmp 조성물 및 방법

Publications (2)

Publication Number Publication Date
KR20140047015A KR20140047015A (ko) 2014-04-21
KR102077618B1 true KR102077618B1 (ko) 2020-02-14

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KR1020137021062A Active KR102077618B1 (ko) 2011-01-11 2012-01-10 금속-패시베이션화 cmp 조성물 및 방법
KR1020187031790A Active KR102017133B1 (ko) 2011-01-11 2012-01-10 금속-패시베이션화 cmp 조성물 및 방법

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Country Status (9)

Country Link
EP (1) EP2663604B1 (https=)
JP (1) JP5992925B2 (https=)
KR (2) KR102077618B1 (https=)
CN (1) CN103298903B (https=)
IL (1) IL227384A (https=)
MY (1) MY163010A (https=)
SG (1) SG191909A1 (https=)
TW (1) TWI462981B (https=)
WO (1) WO2012096931A2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6879995B2 (ja) * 2015-07-13 2021-06-02 シーエムシー マテリアルズ,インコーポレイティド 誘電体基板を加工するための方法及び組成物
US20170066944A1 (en) * 2015-09-03 2017-03-09 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate
JP6901297B2 (ja) 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド 研磨用組成物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005167231A (ja) * 2003-11-14 2005-06-23 Showa Denko Kk 研磨組成物および研磨方法

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US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6866792B2 (en) * 2001-12-12 2005-03-15 Ekc Technology, Inc. Compositions for chemical mechanical planarization of copper
GB2393447B (en) * 2002-08-07 2006-04-19 Kao Corp Polishing composition
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
TWI347969B (en) * 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
US20060063687A1 (en) * 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
KR20080033514A (ko) * 2005-08-05 2008-04-16 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속막 평탄화를 위한 고 처리량의 화학적 기계적 연마조성물
US20070037491A1 (en) * 2005-08-12 2007-02-15 Yuzhuo Li Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing
JP2008192930A (ja) * 2007-02-06 2008-08-21 Fujifilm Corp 金属研磨用組成物及びそれを用いた化学的機械的研磨方法
US7931714B2 (en) * 2007-10-08 2011-04-26 Uwiz Technology Co., Ltd. Composition useful to chemical mechanical planarization of metal
JP5277640B2 (ja) * 2007-10-17 2013-08-28 日立化成株式会社 Cmp用研磨液及び研磨方法
US7955520B2 (en) * 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
US8337716B2 (en) * 2008-01-23 2012-12-25 Uwiz Technology Co., Ltd. Sarcosine compound used as corrosion inhibitor
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
CN101747841A (zh) * 2008-12-05 2010-06-23 安集微电子(上海)有限公司 一种化学机械抛光液
TWI454561B (zh) * 2008-12-30 2014-10-01 Uwiz Technology Co Ltd A polishing composition for planarizing the metal layer
CN101928520B (zh) * 2009-06-19 2014-03-12 盟智科技股份有限公司 用于平坦化金属层的研磨组成物
JP2012069785A (ja) * 2010-09-24 2012-04-05 Fujimi Inc 研磨用組成物および研磨方法

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2005167231A (ja) * 2003-11-14 2005-06-23 Showa Denko Kk 研磨組成物および研磨方法

Also Published As

Publication number Publication date
JP2014507799A (ja) 2014-03-27
SG191909A1 (en) 2013-08-30
MY163010A (en) 2017-07-31
EP2663604A4 (en) 2016-04-27
IL227384A0 (en) 2013-09-30
CN103298903A (zh) 2013-09-11
EP2663604A2 (en) 2013-11-20
KR102017133B1 (ko) 2019-09-02
CN103298903B (zh) 2015-11-25
WO2012096931A3 (en) 2012-11-01
TWI462981B (zh) 2014-12-01
IL227384A (en) 2017-05-29
JP5992925B2 (ja) 2016-09-14
KR20180123167A (ko) 2018-11-14
WO2012096931A2 (en) 2012-07-19
KR20140047015A (ko) 2014-04-21
TW201235428A (en) 2012-09-01
EP2663604B1 (en) 2020-07-01

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