SG191909A1 - Metal-passivating cmp compositions and methods - Google Patents

Metal-passivating cmp compositions and methods Download PDF

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Publication number
SG191909A1
SG191909A1 SG2013052816A SG2013052816A SG191909A1 SG 191909 A1 SG191909 A1 SG 191909A1 SG 2013052816 A SG2013052816 A SG 2013052816A SG 2013052816 A SG2013052816 A SG 2013052816A SG 191909 A1 SG191909 A1 SG 191909A1
Authority
SG
Singapore
Prior art keywords
composition
alkyl
forming metal
substituted
cmp
Prior art date
Application number
SG2013052816A
Other languages
English (en)
Inventor
Jason Keleher
Pankaj Singh
Vlasta Brusic
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/004,113 external-priority patent/US8435421B2/en
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG191909A1 publication Critical patent/SG191909A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K8/00—Compositions for drilling of boreholes or wells; Compositions for treating boreholes or wells, e.g. for completion or for remedial operations
    • C09K8/52—Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning
    • C09K8/528—Compositions for preventing, limiting or eliminating depositions, e.g. for cleaning inorganic depositions, e.g. sulfates or carbonates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals
    • C23F3/06—Heavy metals with acidic solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
SG2013052816A 2011-01-11 2012-01-10 Metal-passivating cmp compositions and methods SG191909A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/004,113 US8435421B2 (en) 2007-11-27 2011-01-11 Metal-passivating CMP compositions and methods
PCT/US2012/020737 WO2012096931A2 (en) 2011-01-11 2012-01-10 Metal-passivating cmp compositions and methods

Publications (1)

Publication Number Publication Date
SG191909A1 true SG191909A1 (en) 2013-08-30

Family

ID=46507631

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2013052816A SG191909A1 (en) 2011-01-11 2012-01-10 Metal-passivating cmp compositions and methods

Country Status (9)

Country Link
EP (1) EP2663604B1 (https=)
JP (1) JP5992925B2 (https=)
KR (2) KR102077618B1 (https=)
CN (1) CN103298903B (https=)
IL (1) IL227384A (https=)
MY (1) MY163010A (https=)
SG (1) SG191909A1 (https=)
TW (1) TWI462981B (https=)
WO (1) WO2012096931A2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6879995B2 (ja) * 2015-07-13 2021-06-02 シーエムシー マテリアルズ，インコーポレイティド 誘電体基板を加工するための方法及び組成物
US20170066944A1 (en) * 2015-09-03 2017-03-09 Cabot Microelectronics Corporation Methods and compositions for processing dielectric substrate
JP6901297B2 (ja) 2017-03-22 2021-07-14 株式会社フジミインコーポレーテッド 研磨用組成物

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6866792B2 (en) * 2001-12-12 2005-03-15 Ekc Technology, Inc. Compositions for chemical mechanical planarization of copper
GB2393447B (en) * 2002-08-07 2006-04-19 Kao Corp Polishing composition
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
TWI347969B (en) * 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
JP4667013B2 (ja) * 2003-11-14 2011-04-06 昭和電工株式会社 研磨組成物および研磨方法
US20060063687A1 (en) * 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
KR20080033514A (ko) * 2005-08-05 2008-04-16 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 금속막 평탄화를 위한 고 처리량의 화학적 기계적 연마조성물
US20070037491A1 (en) * 2005-08-12 2007-02-15 Yuzhuo Li Chemically modified chemical mechanical polishing pad, process of making a modified chemical mechanical polishing pad and method of chemical mechanical polishing
JP2008192930A (ja) * 2007-02-06 2008-08-21 Fujifilm Corp 金属研磨用組成物及びそれを用いた化学的機械的研磨方法
US7931714B2 (en) * 2007-10-08 2011-04-26 Uwiz Technology Co., Ltd. Composition useful to chemical mechanical planarization of metal
JP5277640B2 (ja) * 2007-10-17 2013-08-28 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
US7955520B2 (en) * 2007-11-27 2011-06-07 Cabot Microelectronics Corporation Copper-passivating CMP compositions and methods
US8337716B2 (en) * 2008-01-23 2012-12-25 Uwiz Technology Co., Ltd. Sarcosine compound used as corrosion inhibitor
US8247327B2 (en) * 2008-07-30 2012-08-21 Cabot Microelectronics Corporation Methods and compositions for polishing silicon-containing substrates
CN101747841A (zh) * 2008-12-05 2010-06-23 安集微电子（上海）有限公司 一种化学机械抛光液
TWI454561B (zh) * 2008-12-30 2014-10-01 Uwiz Technology Co Ltd A polishing composition for planarizing the metal layer
CN101928520B (zh) * 2009-06-19 2014-03-12 盟智科技股份有限公司 用于平坦化金属层的研磨组成物
JP2012069785A (ja) * 2010-09-24 2012-04-05 Fujimi Inc 研磨用組成物および研磨方法

Also Published As

Publication number Publication date
JP2014507799A (ja) 2014-03-27
MY163010A (en) 2017-07-31
EP2663604A4 (en) 2016-04-27
IL227384A0 (en) 2013-09-30
CN103298903A (zh) 2013-09-11
EP2663604A2 (en) 2013-11-20
KR102017133B1 (ko) 2019-09-02
CN103298903B (zh) 2015-11-25
WO2012096931A3 (en) 2012-11-01
TWI462981B (zh) 2014-12-01
IL227384A (en) 2017-05-29
JP5992925B2 (ja) 2016-09-14
KR20180123167A (ko) 2018-11-14
WO2012096931A2 (en) 2012-07-19
KR20140047015A (ko) 2014-04-21
TW201235428A (en) 2012-09-01
EP2663604B1 (en) 2020-07-01
KR102077618B1 (ko) 2020-02-14

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