KR102077208B1 - Low temperature plasma device for surface treatment - Google Patents

Abstract

The present invention relates to a surface treatment apparatus using a low temperature plasma. More specifically, the present invention relates to a low temperature plasma surface treatment apparatus for improving the biocompatibility of the biomaterial.

Description

Low temperature plasma device for surface treatment

The present invention relates to a surface treatment apparatus using a low temperature plasma. More specifically, the present invention relates to a low-temperature plasma surface treatment apparatus for improving the bioadhesion of biomaterials.

Low-temperature plasma surface treatment technology for improving biocompatibility of biomaterials is a high value-added bio surface treatment technology that is rapidly increasing in demand. Atmospheric plasma technology, which has grown rapidly as a surface treatment technology in the semiconductor and display industries in the early 2000s, has recently been creating new healthcare related technologies through the convergence between bio-plasma technologies. Applicable

A representative example of biomaterial surface treatment among low temperature plasma surface treatment technologies currently being developed in Korea is an implant fixture surface treatment apparatus using plasma jet. The plasma jet form has problems such as the need for continuous supply of inert gas (Ar, He), nonuniformity of treatment due to the pencil type treatment form, and difficulty in simple use at the procedure site. Therefore, the demand for low-temperature plasma surface treatment technology that can solve this problem is increasing in related industries.

Background art of the present invention is described in the Republic of Korea Patent No. 10-0595418 aluminum plasma chamber and its manufacturing method.

An object of the present invention is to provide a low-temperature plasma surface treatment apparatus for super-hydrophilic surface treatment for improving the biocompatibility of bio materials.

Another object of the present invention is to provide a low temperature plasma surface treatment apparatus for sterilization.

It is still another object of the present invention to provide a low temperature plasma surface treatment apparatus for surface treatment of dental implant materials in a form easily usable by a doctor in a dental clinic.

Other objects and advantages of the present invention will become apparent from the following detailed description, claims and drawings.

According to one aspect, the chamber having one or more tubular low-temperature plasma generating unit is inserted into the workpiece; And a lid portion covering the top surface of the chamber so as to be openable and closed, wherein the low temperature plasma generating portion has a tubular shape surrounded from the outside by the first electrode, the dielectric tube, and the second electrode. A low temperature plasma surface treatment apparatus is provided, wherein the second electrode is a ground electrode.

According to one embodiment, the second electrode may be a patterned or porous form.

According to an embodiment, the method may further include active species discharge means for discharging active species generated in the chamber.

According to one embodiment, the lid portion may be configured to individually open and close the low temperature plasma generation unit.

According to another aspect, the chamber comprising one or more tubular low-temperature plasma generating unit is inserted into the workpiece of the metal material; And a low temperature plasma generating unit including a dielectric tube and a first electrode provided outside the dielectric tube, wherein the first electrode is a voltage application electrode, and the metal object is a ground electrode. An apparatus is provided.

According to one embodiment, the dielectric tube may be composed of a ceramic, a polymer polymer, or glass.

According to one embodiment, the dielectric tube may be inserted into the workpiece to one side, and further provided with active species discharge means on the other side.

According to one embodiment, the active species discharge means, the tube is connected to the dielectric tube; A pump connected to the tube; And it may include an ozone removal unit provided in the front or rear of the pump.

According to an embodiment of the present disclosure, the chamber may be divided into two or more accommodation units in which a plurality of low temperature plasma generators are individually operable.

According to an embodiment, the low temperature plasma generating unit may be horizontally fixed in the chamber.

According to an embodiment of the present invention, the low temperature plasma generator includes a conductive mount member coupled in a sliding manner, and the mount member fixes the upper portion of the target object to be inserted into the lower target object into the low temperature plasma generator. It may include a fixing part.

According to one embodiment, one side of the mount member may include a guide groove that can slide along the protruding rail provided on one surface of the chamber.

According to one embodiment, the left and right end portions of the mount member further includes a protrusion coupled to the insertion groove formed in the low temperature plasma generating unit, the low temperature plasma generating unit and the mount member is generated in the low temperature plasma generating unit when combined It is possible to prevent the active species from being discharged upwards.

According to one embodiment, the workpiece may be an implant fixture.

According to an embodiment, the hydrophilic treatment may be performed on the object to be treated at a speed of 1 mm / sec or more.

According to one embodiment, the water contact angle of the target surface treated by the low temperature plasma surface treatment apparatus of the present application may be 20 degrees or less.

According to one embodiment, the ozone emission of the low temperature plasma surface treatment apparatus of the present application may be 0.05 ppm or less.

According to one embodiment, the low temperature plasma surface treatment apparatus of the present application may generate a plasma by applying a voltage of 0.5 ~ 10kV to the first electrode.

According to another aspect, a method of performing a low temperature plasma surface treatment using the low temperature plasma surface treatment apparatus of the present invention, the method comprising the steps of: inserting the workpiece into the dielectric tube of the low temperature plasma generating unit; Sucking outside air into the dielectric tube; Generating a plasma by applying a voltage to the first electrode; And surface treatment of the object by plasma.

According to one embodiment, in the low temperature plasma surface treatment method of the present application, a voltage of 0.5 ~ 10kV may be applied in the step of generating the plasma.

According to an embodiment, the superhydrophilic surface treatment and / or sterilization may be efficiently performed within a short time for improving biocompatibility of the biomaterial.

According to an embodiment, a low-temperature plasma surface treatment apparatus for surface treatment of dental implant materials in a form easily usable by a doctor in a dental clinic may be provided.

According to one embodiment, a hydrophilic surface treated implant fixture can be taken and used without further contamination in a dental clinic.

According to one embodiment, compared with the conventional plasma jet form, the continuous supply of inert gas is unnecessary, and it is possible to solve the problem of pencil type processing nonuniformity.

1 is a view schematically showing the use of the implant procedure by hydrophilic surface treatment to the implant fixture (I) in the dentist using a low-temperature plasma surface treatment apparatus according to an embodiment of the present application.
FIG. 2 is a perspective view schematically illustrating that an implant fixture I is inserted into a low temperature plasma surface treatment apparatus according to a first embodiment of the present disclosure.
3 is a cross-sectional view of the low temperature plasma generation unit of the low temperature plasma surface treatment apparatus according to the first embodiment of the present application.
4 is a cross-sectional view schematically showing a low temperature plasma generation unit and a lid unit of a low temperature plasma surface treatment apparatus according to a second embodiment of the present disclosure.
FIG. 5A is a partial longitudinal cross-sectional view schematically illustrating a low temperature plasma generation unit of a low temperature plasma surface treatment apparatus according to a third embodiment of the present disclosure.
FIG. 5B is a cross sectional view along line AA of FIG. 5A.
6 is an exploded perspective view schematically illustrating that an implant fixture I is inserted into a low temperature plasma surface treatment apparatus according to a third embodiment of the present disclosure.
7 is a perspective view illustrating a mount member for fixing a mount of an implant fixture I in a low temperature plasma surface treatment apparatus according to a third embodiment of the present disclosure.
8 is a schematic view showing the configuration of a low-temperature plasma surface treatment apparatus according to a third embodiment of the present application.
9 is a configuration diagram showing the configuration of a low-temperature plasma surface treatment apparatus according to a third embodiment of the present disclosure.
10 and 11 are photographs showing that the hydrophilicity is increased after surface treatment of the implant fixture (I) by the low temperature plasma surface treatment apparatus of the present application.

The objects, specific advantages, and novel features of the present disclosure will become more apparent from the following detailed description and embodiments associated with the accompanying drawings.

Prior to this, the terms or words used in the present specification and claims should not be interpreted in the ordinary and dictionary sense, and the inventors may appropriately define the concept of terms in order to best explain their own invention. It should be interpreted as meanings and concepts corresponding to the technical spirit of the present disclosure on the basis of the principle of the present invention.

In the present specification, when a component such as a layer, part, or substrate is described as being "on", "connected", or "coupled" to another component, it is directly on another component "on", " Connected, "or" coupled ", and may be interposed between one or more other components. In contrast, if a component is described as being "directly on", "directly connected", or "directly coupled" to another component, no other component may be interposed between the two components. .

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the disclosure. Singular expressions include plural expressions unless the context clearly indicates otherwise.

In this specification, terms such as "comprise" or "have" are intended to indicate that there is a feature, number, step, action, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

In the present specification, when a part is said to "include" a certain component, it means that it may further include other components, except to exclude other components unless specifically stated otherwise. In addition, throughout the specification, "on" means to be located above or below the target portion, and does not necessarily mean to be located above the gravity direction.

The present disclosure may be variously modified and have various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present disclosure to specific embodiments, and it should be understood to include all transformations, equivalents, and substitutes included in the spirit and technical scope of the present disclosure. In the description of the present disclosure, when it is determined that the detailed description of the related known technology may obscure the gist of the present disclosure, the detailed description thereof will be omitted.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings, and in the following description with reference to the accompanying drawings, the same or corresponding components will be given the same reference numerals and redundant description thereof will be omitted. do.

1 is a view schematically showing the use of the implant treatment by performing a hydrophilic surface treatment to the implant fixture (I) in the dentist using a low-temperature plasma surface treatment apparatus according to an embodiment of the present application.

Referring to FIG. 1, after inserting an implant fixture into a tube of a low temperature plasma surface treatment apparatus according to an embodiment of the present disclosure, hydrophilic surface treatment may be efficiently performed. The improved hydrophilicity of the implant fixture can attract blood and proteins to induce bone fusion at the fast implant site.

Therefore, the hydrophilic surface-treated implant fixture can be easily taken without additional contamination in the dental clinic as described above, and bone fusion can be efficiently induced. In addition, compared to the conventional plasma jet form, the continuous supply of inert gas is unnecessary, and it is possible to solve the problem of pencil type processing nonuniformity.

FIG. 2 is a perspective view schematically showing that an implant fixture I is inserted into a low temperature plasma surface treatment apparatus according to a first embodiment of the present invention. 3 is a cross-sectional view of a low temperature plasma generation unit of a low temperature plasma surface treatment apparatus according to a first embodiment of the present invention.

Referring to FIG. 2, the low temperature plasma surface treatment apparatus is capable of opening and closing a chamber 100a having at least one tubular low temperature plasma generating unit 110 into which a target object is inserted and an upper surface of the chamber 100a. It consists of a covering part 100b.

Referring to FIG. 3, the low temperature plasma generator 110 is a tubular shape in which one or more implant fixtures I are formed in the upper plate 112 of the chamber 100a and is inserted into the first electrode. It is surrounded by the order of 113, the dielectric tube 114, and the second electrode 115, and is electrically connected to the power supply unit 120.

The first electrode 113 is a voltage application electrode for generating a dielectric barrier plasma. The first electrode 113 may be formed as a flat plate of a conductive metal thin film, but is not limited thereto and may be formed as a pattern. The first electrode 113 may be a high voltage applied to the metal electrode, it may be 1 ~ 10kV, 60Hz ~ 15MHz. At this time, the amount of ozone generated is 100 ppm or more, so that the hydrophilic surface treatment and sterilization can be efficiently performed in a short time of the implant fixture (I).

The second electrode 115 is a ground electrode to which no voltage is applied, and maintains ground (0V) to form a strong electric field on the surface of the dielectric tube 114 to generate plasma. The second electrode 115 may be arranged in a structure that can be in contact with the surface treatment object, it is possible to configure an electrode of various structures.

The second electrode 115 may be formed in a patterned or porous form arranged at regular intervals, but is not limited thereto. The pattern type may be, for example, the second electrode 115 may be formed in a line or lattice lattice shape (mesh type) in which a plurality of lines are formed to expose a part of the dielectric tube 114. A mold (mesh type) may be suitable. When voltage is applied to the first electrode 113, atmospheric pressure plasma P is generated between the second electrodes 115.

The first electrode 113 and the second electrode 115 may be formed of a metal including iron (Fe), chromium (Cr), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag), and the like. It may be composed of one selected.

The dielectric tube 114 is positioned between the first electrode 113 and the second electrode 115 to suppress the discharge generated in the interelectrode space to which the voltage is applied to the transition to the high current discharge, and to prevent the low temperature plasma. The generator prevents electric shocks when it comes into contact with the human body.

The dielectric tube 114 may be formed of various kinds of insulators, but is not limited thereto, and may include one type selected from ceramics, polymer polymers, and glass. The dielectric tube 114 may be made of ceramic or glass, which is a material that is less deformed by heat generated by electrical energy applied to generate active species and less destroyed by the voltage applied to the electrode.

Electrically connected by the power supply unit 120, the low temperature plasma generating unit 110 may generate plasma P to generate active species to perform surface treatment of the inserted implant fixture I. By the surface treatment, the surface of the implant fixture I may be subjected to superhydrophilization treatment and / or sterilization treatment. Therefore, the biocompatibility of the implant can be improved and infection of bacteria and the like can be prevented.

Active species generation is by using a low temperature plasma generation method. Electrical methods are mainly used to decompose atmospheric gases consisting of nitrogen, oxygen, moisture and carbon dioxide in the atmosphere at about 1 atmosphere. Plasma generation is a representative method for generating active species using electrical energy. An electric field of about 30 kV / cm or more is required to generate a plasma at 1 atm in the atmosphere, and discharge occurs when the electric field is applied to a space between a metal and a metal. In this case, an insulator or a dielectric is inserted to maintain a stable discharge and to suppress excessive discharge voltage improvement. An exemplary method is an atmospheric barrier dielectric barrier discharge (DBD).

In the atmospheric dielectric barrier discharge, an AC voltage having a frequency of several tens of Hz to several tens of MHz is applied to at least one electrode, and an insulator is disposed in the space between the separated electrodes to prevent the flow of DC current. By the insulator, the DC current does not flow excessively, and the transition to the high temperature arc discharge is suppressed, thereby maintaining a low temperature plasma having a gas temperature of about tens of degrees Celsius at 1 atm.

In the present invention, the "active species" is not limited thereto, but active species generated in low-temperature plasma include oxygen ions (O, O ²⁺ ), and active oxygen species including reactive oxygen species ROS (O ₃ ) ROS Species), active nitrogen species RNS (Reactive Nitrogen Species), hydroxyl group (OH) and the like. In the present invention, the active species has a sterilizing or sterilizing function that destroys the cell walls of pathogens and microorganisms and reduces life support functions.

Active species, such as ozone (O ₃ ) generated in the low temperature plasma generating unit 110 is discharged through the ozone suction unit 130 formed at one or more places on the top plate (112). At this time, the pump 150 is connected to the ozone suction unit 130 through the tube 140 to quickly discharge ozone. In addition, the front and / or rear of the pump 150 connected to the lower end of the tube 140 is provided with an ozone removal unit 160 for removing the ozone discharged to the concentration of ozone discharged through the pump 150 It can be maintained at a level below 0.05 ppm. The ozone removal unit 160 may use a variety of known materials. For example, it may be an activated carbon catalyst for ozone removal, or a manganese catalyst, but is not limited thereto.

An upper end of the tube 140 'is connected to the lower end of the low temperature plasma generator 110, and air is supplied to the low temperature plasma generator 110 by a pump 150' connected to the lower end of the tube 140 '. Can be supplied smoothly.

In the present disclosure, the pumps 150 and 150 ′ may be diaphragm pumps.

4 is a cross-sectional view schematically showing the low temperature plasma generating unit 110 and the lid unit 100b 'of the low temperature plasma surface treatment apparatus according to the second embodiment of the present application.

Referring to FIG. 4, the low temperature plasma surface treatment apparatus according to the second embodiment differs from the lid portion 100b ′ in comparison with the low temperature plasma surface treatment apparatus according to the first embodiment. That is, in the second embodiment, the lid part 100b ′ is individually formed on the low temperature plasma generator 110 so as to open and close each of the low temperature plasma generator 110. According to this structure, when taking out the surface-treated implant fixture I, the individual lid part 100b 'is opened, and surface treatment and antibacterial treatment efficiency can be improved and further contamination can be prevented.

5A is a partial longitudinal cross-sectional view schematically showing a low temperature plasma surface treatment apparatus according to a third embodiment of the present disclosure. FIG. 5B is a cross-sectional view along the line A-A of FIG. 5A. 6 is an exploded perspective view schematically illustrating that an implant fixture I is inserted into a low temperature plasma surface treatment apparatus according to a third embodiment of the present disclosure.

5A and 5B, the low temperature plasma surface treatment apparatus according to the third embodiment of the present invention has a conductor implant (I) without a second electrode as compared to the low temperature plasma surface treatment apparatus according to the first embodiment. The biggest difference is the configuration that functions as a ground electrode. According to the said structure, the structure of a low temperature plasma surface treatment apparatus can be made simpler, and surface treatment efficiency can also be improved. Hereinafter, detailed descriptions of the same components as those of the first and second embodiments will be omitted.

5A to 6, a low temperature plasma surface treatment apparatus according to a third embodiment includes a chamber 200 having one or more tubular low temperature plasma generators 210 into which a metal implant fixture I is inserted. ); And a lid part 300 covering the upper surface of the chamber 200 to be opened and closed, wherein the low temperature plasma generator 210 includes a dielectric tube 214 and a first electrode provided outside the dielectric tube 214. 213, wherein the first electrode 213 is a voltage application electrode, the metal implant fixture I is a ground electrode, and is electrically connected to the power supply unit 220.

The lid 300 may cover the entire upper surface of the chamber 210, may be configured to cover only the low temperature plasma generator 210, and to open and close the low temperature plasma generator 210 individually. Can be configured. As shown in FIG. 6, when the lid part 300 is configured to cover only the plasma generator 210, the lid member 300 may be easily slid without opening the lid part 300. .

As illustrated in FIG. 6, the plurality of low temperature plasma generators 210 may be provided in the chamber 200 to be fixed to the bracket 215.

The dielectric tube 214 has a tubular shape into which the implant fixture I is inserted, and is configured such that the dielectric tube 214 and the implant fixture I can maintain a spacing of about 1 to 2 mm. As a result, plasma can be generated on the surface of the implant fixture I even at a low voltage, and the hydrophilization treatment efficiency can be further increased.

In addition, as shown in FIG. 5A, the flow of air flowing into the dielectric tube 214 is limited to the dielectric tube 214, and active species such as ozone generated during the surface treatment of the implant fixture I are It can be easily discharged along the dielectric tube 214.

The dielectric tube 214 may be made of a ceramic, a polymer, or glass, but the ceramic may be suitable in terms of heat resistance and durability.

The dielectric tube 214 may have an implant fixture (I) inserted into one side thereof and further include active species discharge means on the other side thereof. The active species discharge means, the tube 240 is connected to the dielectric tube (214); A pump 250 connected to the tube 240; And an ozone removal unit 260 provided at the front or the rear of the pump 250. The pump 250 also functions to suck outside air into the dielectric tube 214. In contrast to the first embodiment shown in FIG. 3, there is a difference in which the pump 150 for discharging active species and the pump 150 ′ for supplying external air to the dielectric tube are integrated. By the above configuration of the third embodiment, the structure can be simplified and the active species discharge efficiency can be improved.

The chamber 200 may be divided into two or more accommodating parts 212 in which the plurality of low temperature plasma generating parts 210 are individually operable.

Referring to FIG. 6, a plurality of low temperature plasma generators 210 may be horizontally fixed in the chamber 200.

One side (right side of FIG. 6) of the low temperature plasma generator 210 is provided with a conductive mount member 230 for fixing the mount of the implant fixture I, so that the implant fixture I is connected to the ground electrode. Configured to function.

The conductive mount member 230 may be coupled to the low temperature plasma generating unit 210 in a sliding manner, thereby easily extracting the surface-treated implant fixture I and immediately used for implantation while maintaining the surface treatment and sterilization state. Can be.

The mount member 230 may be pulled out in a drawer type, and the mount member 230 may be fixed if the mount of the implant fixture I can be fixed. In addition, the material of the mounting member 230 is one selected from metals including iron (Fe), chromium (Cr), nickel (Ni), aluminum (Al), copper (Cu), silver (Ag) and the like. It is suitable to be configured as described above, but is not limited thereto.

FIG. 7 is a perspective view illustrating a mount member 230 fixing a mount of an implant fixture I in a low temperature plasma surface treatment apparatus according to a third embodiment of the present disclosure.

Referring to FIG. 7, the mount member 230 includes a plate-shaped fixing part 232 having a fixing groove 234 in which a mount of the implant fixture I is mounted. Two or more fixing parts 232 may be provided.

One side of the mount member 230 may include a guide groove 236 that can slide along the protruding rail 216 provided on the bottom surface of the housing 212 of the chamber 200.

Two or more protruding rails 216 may be formed, and the guide groove 236 may be formed at both sides of the mount member 230, but is not limited thereto.

The left and right end portions of the mount member 230 further include a protrusion 238 coupled to the insertion groove 218 formed in the low temperature plasma generator 210, and the low temperature plasma generator 210 and the mount member ( When the 230 is coupled, the active species generated in the low temperature plasma generator 210 may not be discharged upward. By the above configuration, it is possible to prevent the active species such as ozone from leaking out when the plasma is generated.

8 is a schematic view showing the configuration of a low-temperature plasma surface treatment apparatus according to a third embodiment of the present application. 9 is a configuration diagram showing the configuration of a low-temperature plasma surface treatment apparatus according to a third embodiment of the present disclosure.

Referring to FIG. 8, the chamber 200 may include a plurality of accommodating parts 212 loaded with a low temperature plasma generating part 210. The accommodating part 212 uses a power button 222 provided on each front surface thereof to apply a high voltage power supply 224 of the power supply part 220 to generate plasma around the implant fixture I stored therein, thereby treating the surface. You can do At this time, the generated ozone is easily discharged to the outside by the pump 250 of the exhaust part through the tube (240 in FIG. 9) connected to the distal end of the dielectric tube 214. At this time, the discharged ozone is absorbed by the ozone removal unit 260 provided in front or rear of the pump 250 of the exhaust portion, it is possible to lower the discharge amount of ozone discharged to 0.05 ppm or less. The ozone removing unit 260 is not limited thereto, and may include a known ozone removing activated carbon catalyst, a manganese catalyst, and the like.

Although not limited thereto, the dielectric tube 214 of the present application may be variously adjusted according to the diameter size of the implant fixture I used. Accordingly, the accommodating part 212 may determine and use the exclusive accommodating part 212 according to the diameter size of the implant fixture I. The tube 240 herein may suitably be made of silicone.

According to the low temperature plasma surface treatment apparatus of this application, the said to-be-processed object can be superhydrophilic-processed within a short time at a speed of 1 mm / sec or more.

The hydrophilic treatment is possible because the water contact angle of the object to be treated by the low temperature plasma surface treatment apparatus of the present application is 20 degrees or less.

The ozone emission of the low temperature plasma surface treatment apparatus of the present application is 0.05 ppm or less, so that the ozone emission can be reduced.

The low temperature plasma surface treatment apparatus of the present application may generate a plasma by applying a voltage of 0.5 to 10 kV to the first electrode, thereby reducing the risk of electric shock and saving energy.

The method for performing low temperature plasma surface treatment using the low temperature plasma surface treatment apparatus of the present application includes a first step of inserting an implant fixture (I) into the dielectric tube 214 of the low temperature plasma generator 210; A second step of sucking outside air into the dielectric tube 214; Generating a plasma by applying a voltage to the first electrode 213; And a fourth step of performing surface treatment of the implant fixture I by plasma.

6 to 8, in the first step, a mount of the implant fixture I is inserted into the fixing groove 234 of the fixing part 232 of the mounting member 230 to mount the implant fixture I. To 230.

Next, the mounting member 230 is coupled by sliding toward the low temperature plasma generator 210. At this time, the guide grooves 236 provided on both sides of the mount member 230 slide along the protruding rail 216 formed on the bottom surface of the accommodating part 212. In addition, the protrusion 238 provided at the distal end of the mount member 230 may be seated in the insertion groove 216 provided in the low temperature plasma generator 210. Therefore, the implant fixture I fixed to the mount member 230 is inserted into the dielectric tube 214 of the low temperature plasma generator 210.

In the second step, when the pump 250 is operated by operating the power button 222 provided on the front of the accommodating part 212, external air may be sucked into the dielectric tube 214.

In the third step, external air is sucked into the dielectric tube 214 and after a few minutes, a voltage is applied from the high voltage power source 224 to the first electrode 213 to form a plasma inside the dielectric tube 214. In this case, the voltage applied thereto may be a voltage of 0.5 to 10 kV. It can be used by those skilled in the art according to the type and thickness of the dielectric within the applied voltage range. In addition, the implant fixture I functions as a ground electrode through the mount member 230.

In the fourth step, a plasma is generated in the dielectric tube 210 by the dielectric catastrophic discharge to generate active species, thereby implanting the implant fixture I inserted into the dielectric tube 210 to have a super hydrophilic surface treatment. And sterilization. At this time, the active species including the generated ozone is removed through the ozone removal unit 260 by moving through the tube 240 connected to the dielectric tube 214.

10 and 11 are photographs showing that the hydrophilicity is increased after surface treatment of the implant fixture (I) by the low temperature plasma surface treatment apparatus of the present application.

The degree of hydrophilicity was investigated after surface treatment of the implant fixture (I) by the low temperature plasma surface treatment apparatus according to the third embodiment of the present application.

The implant fixture used was a 10mm titanium implant fixture (I) sample A, which was surface treated with 20W power consumption for 20 seconds.

Next, only the tip of the implant fixture (I) was contacted with a PBS solution similar to the human body, and then the degree of hydrophilic surface treatment was confirmed by checking the wetness of the surface.

As a result, as shown in Figure 10, the wetting speed is 1mm / sec shows that the hydrophilicity is greatly improved.

In addition, a 10 mm titanium implant fixture (I) sample B was surface treated at a power consumption of 25 W for 20 seconds by the low temperature plasma surface treatment apparatus according to the third embodiment of the present application.

Next, only the tip of the implant fixture (I) was contacted with a PBS solution similar to a human body, and then the surface wet rate was confirmed.

As a result, as shown in Figure 11, the wetting speed is 1.6mm / sec, it can be seen that the hydrophilicity is greatly improved.

As shown in Figures 10 and 11, the low temperature plasma surface treatment apparatus of the present application can significantly increase the hydrophilicity in a very short time of 20 seconds. This drastically shortens the surface treatment time of the implant fixture (I), compared with the current 20-45 minute treatment time for UV applications.

In addition, although not limited thereto, the implant fixture I surface-treated by the low-temperature plasma surface treatment apparatus of the present application may have a water contact angle of 20 degrees or less.

According to one embodiment of the present application, the implant fixture (I) may be configured to be in contact with the ground electrode (not shown) when inserted into the low-temperature plasma surface treatment apparatus without taking out of the storage container (nonconductor). The ground electrode may be provided inside the dielectric tube 214 and may be in contact contact compression with a spring.

In the above embodiment, the object to be processed is described with reference to the implant fixture I, but the object is not limited thereto. That is, all the biomaterials that need to be improved in biocompatibility, such as hydrophilicity provision and sterilization, may be processed materials that can be processed by the low temperature plasma surface treatment apparatus of the present application.

Although the present disclosure has been described in detail with reference to specific embodiments, it is intended to specifically describe the present disclosure, and the present disclosure is not limited thereto, and it should be understood by those skilled in the art within the spirit of the present disclosure. It is obvious that modifications and improvements are possible. Simple modifications and variations of the present disclosure are all within the scope of the present disclosure and the specific scope of protection of the present disclosure will be apparent from the appended claims.

100a, 200: chamber
100b, 100b ', 300: lid portion
110, 210: low temperature plasma generating unit
112: tops
113, 213: first electrode
114, 214: dielectric tube
115: second electrode
120, 220: power supply
130: ozone suction unit
140, 140 ', 240: tube
150, 150 ', 250: pump
160, 260: ozone removal unit
212: storage
215: bracket
216: protrusion rail
218: insertion groove
222: power button
230: mount member
232: fixed part
234: fixed groove
236: guide groove
238: protrusion
I: implant fixture
P: plasma

Claims (20)

delete delete delete delete A chamber including at least one tubular low-temperature plasma generating unit into which a workpiece of metal is inserted; Including,
Low temperature plasma generator
A dielectric tube and a first electrode provided outside the dielectric tube,
The first electrode is a voltage application electrode, the metal object is a ground electrode,
A low temperature plasma surface treatment apparatus comprising a conductive mount member coupled to the low temperature plasma generator in a sliding manner.
The method of claim 5,
The dielectric tube is made of a ceramic, a polymer polymer, or glass, low temperature plasma surface treatment apparatus.
The method of claim 5,
The dielectric tube is inserted into the workpiece to one side,
A low temperature plasma surface treatment apparatus further comprising active species discharge means on the other side.
The method of claim 7, wherein
The active species discharge means,
A tube connected to the dielectric tube;
A pump connected to the tube; And
A low temperature plasma surface treatment apparatus comprising an ozone removal unit provided at the front or the rear of the pump.
The method of claim 5,
The chamber is divided into two or more housings in which a plurality of low temperature plasma generating units are individually operable to operate, the low temperature plasma surface treatment apparatus.
The method of claim 5,
A low temperature plasma surface treatment apparatus in which a low temperature plasma generation unit is horizontally fixed in the chamber.
The method of claim 5,
And the mount member includes a fixing part for fixing an upper portion of the object to be inserted into a lower portion of the object to be inserted into the low temperature plasma generator.
The method of claim 11,
One side of the mount member includes a guide groove that can slide along the protruding rail provided on one surface of the chamber, low temperature plasma surface treatment apparatus.
The method of claim 11,
The left and right end portions of the mount member further include a protrusion coupled to the insertion groove formed in the low temperature plasma generator, and active species generated in the low temperature plasma generator are not discharged upward when the low temperature plasma generator and the mount member are coupled to each other. Low temperature plasma surface treatment apparatus.
The method according to any one of claims 5 to 13,
And the workpiece is an implant fixture.
The method according to any one of claims 5 to 13,
A low temperature plasma surface treatment apparatus capable of performing superhydrophilic treatment on the object to be treated at a rate of 1 mm / sec or more.
The method according to any one of claims 5 to 13,
The low-temperature plasma surface treatment apparatus of which the water contact angle of the to-be-processed to-be-processed object is 20 degrees or less.
The method according to any one of claims 5 to 13,
The low temperature plasma surface treatment apparatus of which ozone emission is 0.05 ppm or less.
The method according to any one of claims 5 to 13,
Low-temperature plasma surface treatment apparatus for generating a plasma by applying a voltage of 0.5 ~ 10kV to the first electrode.
In the method of performing a low temperature plasma surface treatment using the low temperature plasma surface treatment apparatus according to any one of claims 5 to 13,
Inserting the object into the dielectric tube of the low temperature plasma generator;
Sucking outside air into the dielectric tube;
Generating a plasma by applying a voltage to the first electrode; And
A surface treatment method for a low temperature plasma, comprising the step of surface treatment of a workpiece by plasma.
The method of claim 19,
Low voltage plasma surface treatment method of applying a voltage of 0.5 ~ 10kV in the step of generating the plasma.

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