CN116390316B - Array type plasma jet device - Google Patents
Array type plasma jet device Download PDFInfo
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- CN116390316B CN116390316B CN202310544178.1A CN202310544178A CN116390316B CN 116390316 B CN116390316 B CN 116390316B CN 202310544178 A CN202310544178 A CN 202310544178A CN 116390316 B CN116390316 B CN 116390316B
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- 238000005452 bending Methods 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 238000009423 ventilation Methods 0.000 claims description 12
- 239000011888 foil Substances 0.000 claims description 3
- 230000002596 correlated effect Effects 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 abstract description 48
- 230000005684 electric field Effects 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 abstract description 3
- 230000002195 synergetic effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000004659 sterilization and disinfection Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 230000029663 wound healing Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/47—Generating plasma using corona discharges
- H05H1/471—Pointed electrodes
Abstract
The application discloses an array type plasma jet device, which relates to the technical field of plasmas, wherein an insulating shell of the array type plasma jet device comprises a main cavity body and a plurality of dielectric columns which are integrally manufactured, a positive high-voltage electrode is inserted into each dielectric column, the distance from the middle position of the dielectric column array to the edge positions of two sides, the opening of each dielectric column and the top end of the positive high-voltage electrode inserted into each dielectric column are gradually increased, and the phenomenon that the positive high-voltage electrode at the edge positions suppresses the electric field of the middle positive high-voltage electrode can be reduced; working gas enters each medium column, and plasma jet is generated at the top end of the positive high-voltage electrode in each medium column, so that energy loss is greatly reduced, and the safety of the device is improved. The array type plasma jet device can generate a plasma jet array which has good uniformity, small energy consumption and can be safely contacted by a human body based on the synergistic effect of corona discharge and dielectric barrier discharge.
Description
Technical Field
The application relates to the technical field of plasmas, in particular to an array type plasma jet device.
Background
The plasma is the fourth state of matter, mainly composed of free electrons and dotted particles, and is macroscopically neutral. In the current gas discharge plasma technology, the atmospheric pressure plasma jet is used for generating high-activity particles (such as charged particles, O, OH, NO and O 3 Etc.), and does not need complicated vacuum environment, etc., and can be effectively applied to the fields of material surface modification, environmental management, biomedicine, etc. In particular, the occurrence of plasma jet greatly promotes the application of low-temperature plasma in the medical field, such as sterilization and disinfection, skin treatment, tooth root canal treatment and the like.
In practical application, a low-temperature plasma jet device is generally used for forming a plasma jet for use, but the existing various low-temperature plasma jet devices often have the problems of high energy consumption, low safety, poor jet uniformity and the like.
Disclosure of Invention
The applicant provides an array type plasma jet device aiming at the problems and the technical requirements, and the technical scheme of the application is as follows:
an array type plasma jet device comprises an insulating shell, a plurality of positive high-voltage electrodes, a plurality of ground electrodes, a current-limiting resistor and a high-voltage pulse power supply, wherein the insulating shell is arranged on the surface of the insulating shell;
the insulating shell comprises a main cavity body and a dielectric column array which are integrally manufactured, a hollow air cavity is formed in the main cavity body, an air inlet communicated with the air cavity is formed in the main cavity body, the dielectric column array comprises a plurality of dielectric columns which are identical in specification and are arranged to form a row, the inside of each dielectric column is hollow, one end of each dielectric column is communicated with the air cavity, and the other end of each dielectric column is formed into an opening;
the outer wall of each dielectric column is provided with a ground electrode at the opening, a positive high-voltage electrode is inserted into each dielectric column, and the distance between the opening of each dielectric column and the top end of the positive high-voltage electrode inserted into each dielectric column is gradually increased along the direction from the middle position of the dielectric column array to the edge positions of the two sides;
each positive high-voltage electrode is connected with the positive electrode of the high-voltage pulse power supply through a current limiting resistor, and each ground electrode is grounded with the negative electrode of the high-voltage pulse power supply;
working gas is introduced into the air cavity through the air inlet, then enters each medium column through the air cavity, and plasma jet is generated at the top end of the positive high-voltage electrode in each medium column.
The array type plasma jet device further comprises a reticular buffer layer, wherein a plurality of vent holes are formed in the reticular buffer layer; the reticular buffer layer is arranged in the air cavity and is positioned at the air inlet, the ventilation direction of the reticular buffer layer is parallel to the ventilation direction of the air inlet, and the ventilation direction of the reticular buffer layer is perpendicular to the ventilation direction of each medium column; working gas is introduced into the air cavity through the air inlet and then enters each medium column through the vent holes on the reticular buffer layer.
The method comprises the further technical scheme that the top ends of all positive high-voltage electrodes are arranged to form an arc shape, the distance between an opening of a medium column at the middle position and the top end of the positive high-voltage electrode inserted into the opening is minimum, the distance between the opening of the medium column at the two side edge positions and the top end of the positive high-voltage electrode inserted into the opening is maximum, and the radius of curvature of the arc shape formed by the top ends of all positive high-voltage electrodes at the positive high-voltage electrode at the middle position is related to the distance between two adjacent medium columns.
The further technical scheme is that the distance between two adjacent dielectric columns of the dielectric column array is 1-2 cm, and the radius of curvature of an arc shape formed at the top end of each positive high-voltage electrode at the middle position is 25-60 mm.
According to the technical scheme, each ground electrode is of an annular structure formed by single-sided conductive metal foil, and is sleeved on the outer wall of an opening of one dielectric column.
The insulated shell further comprises an insulated handle fixed with the main cavity, a hollow wire cavity with two open ends is formed in the insulated handle, a wire connected with the positive high-voltage electrode penetrates out of the main cavity and is led into one open end of the insulated handle, and the wire cavity is led out of the other open end of the insulated handle and is connected with a current-limiting resistor.
The insulation handle is characterized in that the main cavity is also provided with a convex clamping groove, and an opening at one end of the insulation handle is clamped on the clamping groove of the main cavity to realize detachable connection of the insulation handle and the main cavity.
The array type plasma jet device further comprises a gas storage, a gas pipe and a gas flow control valve; working gas is stored in the gas storage, the gas storage is communicated with the air inlet through the air pipe to enable the working gas to be introduced into the air cavity, and the air pipe is provided with a gas flow control valve.
The further technical scheme is that a bending wire is bent to form a plurality of needle electrode structures with metal sharp angles, each needle electrode structure is formed into a positive high-voltage electrode, the metal sharp angles are used as the top ends of the positive high-voltage electrodes, and two ends of the bending wire are connected and connected to a current-limiting resistor; the bending wire comprises conductive metal and an insulating layer arranged outside the conductive metal, the curvature radius of the bending wire ranges from 0.05mm to 0.5mm, the diameter ranges from 0.5mm to 2mm, the resistivity of the conductive metal in the bending wire ranges from 0.017 omega-m to 0.03 omega-m, the bending strength ranges from 80Mpa to 140Mpa, the curvature radius of a metal sharp corner ranges from 0.1mm to 0.6mm, and the thickness of the insulating layer of the bending wire ranges from 0.05mm to ultra0.1mm, resistivity of 10 10 ～10 15 Omega.m, 3.6 MPa-11 MPa of tensile strength and 2 kV-3 kV of pressure resistance.
The further technical proposal is that each medium column is of a hollow cylindrical structure, the inner diameter of each medium column is 1-2 mm, and the outer diameter is 3-4 mm; the air inlet is of a hollow cylindrical structure, the inner diameter of the air inlet is 6 mm-10 mm, and the outer diameter of the air inlet is 12 mm-16 mm.
The beneficial technical effects of this application are:
the application discloses array type plasma jet device, this array type plasma jet device wraps up inside insulating housing with positive high-voltage electrode, avoided positive high-voltage electrode directly to the human body through plasma produce the discharge phenomenon, the security of device has been improved, and the discharge in the gas intracavity of suppression that can be fine moreover, the discharge only produces by the pointed end in the dielectric post, very big reduction energy loss, owing to the arrangement of positive high-voltage electrode is the structure of middle salient, the edge indent, consequently, can reduce the positive high-voltage electrode at edge position to the suppression phenomenon of middle positive high-voltage electrode electric field, compromise the homogeneity of electric field and flow field, thereby make this array type plasma jet device can produce the plasma jet array that the homogeneity is better, the energy consumption is little, human body can the safe contact based on corona discharge and dielectric barrier discharge.
According to the array type plasma jet device, the reticular buffer layer is arranged in the air cavity, so that gas uniformly enters the medium column array, and the uniformity and stability of the generated plasma jet array are improved.
The array type plasma jet device is characterized in that all structures except electrodes are made of insulating materials, a positive high-voltage electrode is arranged in an insulating shell, equipment leakage can be effectively avoided, internal discharge of a cavity is avoided, dielectric barrier discharge can not be formed by hands when the device is held by hands, safety is high, generated plasma jet is close to room temperature, human bodies can be in safe and reliable contact, jet length can be changed randomly by changing voltage and working gas flow, and the whole size of the whole device is 150cm -3 ～300cm -3 Between, facilitate the hand holdingHas good prospect in the fields of tooth root canal treatment, wound healing, sterilization, disinfection and the like.
Drawings
Fig. 1 is a schematic structural view of an array type plasma jet device according to an embodiment of the present application.
Fig. 2 is a schematic cross-sectional view of an array-type plasma jet device according to an embodiment of the present application.
Fig. 3 is a schematic cross-sectional view of an array-type plasma jet device according to an embodiment of the present application.
Fig. 4 is a partial schematic diagram and a circuit connection diagram of an array type plasma jet device according to an embodiment of the present application.
Fig. 5 is a schematic diagram of a positive high voltage electrode according to one embodiment of the present application.
Fig. 6 is a schematic structural view of an array type plasma jet device according to another embodiment of the present application.
Detailed Description
The following describes the embodiments of the present application further with reference to the accompanying drawings.
The application discloses an array type plasma jet device, please refer to fig. 1 and 2, the array type plasma jet device includes an insulating housing, the insulating housing is made of insulating resin material with high temperature resistance and high insulating strength. The insulating housing comprises a main cavity 5 and a dielectric column array 6 which are integrally manufactured, a hollow air cavity 7 is formed in the main cavity 5, and an air inlet 8 communicated with the air cavity 7 is formed in the main cavity 5. The dielectric pillar array 6 includes a plurality of dielectric pillars 9 with the same specification and arranged to form a row, the inside of each dielectric pillar 9 is hollow, one end of each dielectric pillar 9 is communicated with the air cavity 7, and the other end is formed into an opening, as in fig. 1 and 2, taking the dielectric pillar array 6 as an example that 5 dielectric pillars 9 are arranged to form a row.
In one embodiment, each media pillar 9 is a hollow cylindrical structure, and each media pillar 9 has an inner diameter of 1-2 mm and an outer diameter of 3-4 mm. The dielectric pillars 9 in the dielectric pillar array 6 are generally arranged at equal intervals, i.e. the distance between two adjacent dielectric pillars 9 is equal, and in one embodiment, the distance between two adjacent dielectric pillars 9 is 1-2 cm. The air inlet 8 is of a hollow cylindrical structure, the inner diameter of the air inlet 8 is 6 mm-10 mm, and the outer diameter of the air inlet 8 is 12 mm-16 mm. The main cavity 5 is of a hollow cuboid structure, the length of the main cavity 5 is 4-6 cm, the width of the main cavity is 2-4 cm, and the wall thickness of the main cavity is 1-10 mm.
Referring to fig. 3 and 4, the array type plasma jet device further includes a plurality of positive high voltage electrodes 1, a plurality of ground electrodes 2, a current limiting resistor 3 and a high voltage pulse power supply 4.
The outer wall of each dielectric pillar 9 is provided with one ground electrode 2 at the opening. In one embodiment, each of the ground electrodes 2 is a ring-shaped structure formed of a metal foil having one side conductive, each of the ground electrodes 2 is sleeved on an outer wall of an opening of one of the dielectric posts 9, and the respective ground electrodes 2 are sleeved at the same position of the respective dielectric posts 9. In one embodiment, the width of one ground electrode 2 is 1 to 10mm.
A positive high-voltage electrode 1 is inserted into each dielectric column 9, and the top end of each positive high-voltage electrode 1 does not exceed the opening of each dielectric column 9, and further, the top end of each positive high-voltage electrode 1 does not reach the fixed position of the ground electrode 2. Since the positive high-voltage electrode 1 at the edge position can inhibit the space electric field of the positive high-voltage electrode 1 at the middle position, in the application, the distance from the middle position of the dielectric pillar array 6 to the two side edge positions, the opening of each dielectric pillar 9 and the top end of the positive high-voltage electrode 1 inserted therein are gradually increased, so that the weakening effect of the edge electrode on the middle electrode can be well inhibited, the space electric field distribution is greatly improved, and the generated jet flow uniformity is better.
Based on this, in one embodiment, as shown in fig. 3, the tips of the respective positive high-voltage electrodes 1 are arranged to form an arc shape, as shown by a broken line in fig. 3. The distance between the opening of the medium column 9 at the middle position and the top end of the positive high voltage electrode 1 inserted therein is the smallest, and the distance between the opening of the medium column 9 at the two side edge positions and the top end of the positive high voltage electrode 1 inserted therein is the largest. In one embodiment, the distance between the tip of the positive high-voltage electrode 1 and the fixed position of the ground electrode 2 is 1 to 2cm. And the radius of curvature of the arc shape formed at the top end of each positive high voltage electrode 1 at the intermediate position is related to the distance between the adjacent two dielectric pillars 9. Since the distance between two adjacent dielectric pillars 9 of the dielectric pillar array 6 is 1-2 cm, the radius of curvature of the arc shape formed at the top end of each positive high voltage electrode 1 at the middle position is 25-60 mm.
In one implementation, each positive high voltage electrode 1 is implemented as a cylindrical electrode, as shown in fig. 2 and 3, with the tip of each positive high voltage electrode 1 inserted into the dielectric post 9 and the tip passing through the air cavity 7 and being able to pass out of the body cavity 5.
In another implementation, as shown in fig. 4 and 5, the bent wire is bent to form several needle electrode structures with metal sharp corners, each needle electrode structure is formed as one positive high voltage electrode 1 and the metal sharp corners are the top ends of the positive high voltage electrodes 1. The bent wire comprises a conductive metal 18 and an insulating layer 19 included outside thereof, so that no additional wrapping of the insulating layer is necessary. The conductive metal 18 in the bent wire may be copper, aluminum, or the like. The curvature radius range of the bending wire is 0.05 mm-0.5 mm, and the diameter range is 0.5 mm-2 mm. The conductive metal 18 in the bending wire has smaller bending strength, the bending strength ranges from 80Mpa to 140Mpa, the resistivity of the conductive metal in the bending wire ranges from 0.017 Ω -m to 0.03 Ω -m, and the curvature radius of the metal sharp angle ranges from 0.1mm to 0.6mm. The thickness of the insulating layer 19 of the bending wire is 0.05 mm-0.1 mm, the insulating layer 19 of the bending wire is too thick, so that the bending wire is not easy to bend into a sharp angle structure with larger curvature, the thickness of the insulating layer 19 is larger, the electric discharge is difficult to generate, and the insulating layer 19 is too thin, so that the bending wire can cause damage of the insulating layer 19 due to the electric discharge. The resistivity of the insulating layer 19 of the bent wire is 10 10 ～10 15 Omega.m, 3.6 MPa-11 MPa of tensile strength and 2 kV-3 kV of pressure resistance.
Regardless of the structure of the positive high voltage electrodes 1, each positive high voltage electrode 1 is connected to the positive electrode of the high voltage pulse power source 4 via the current limiting resistor 3, as shown in fig. 4. When the positive high-voltage electrodes 1 are realized by adopting columnar electrodes, the tail ends of the positive high-voltage electrodes 1 are connected with the current-limiting resistor 3 through wires, and when the bent wires are bent to form the positive high-voltage electrodes 1, the two ends of the conductive metal 18 in the bent wires are connected and connected with the current-limiting resistor 3, as shown in fig. 4. Each ground electrode 2 is grounded to the negative electrode of the high-voltage pulse power supply 4. In one embodiment, the resistance of the current limiting resistor 3 ranges from 10kΩ to 1mΩ, the output voltage of the high voltage pulse power supply 4 is 6kV, the pulse width of the output voltage is 2 μs, and the frequency is 2kHz.
Working gas is introduced into the gas chamber 7 via the gas inlet 8, and then enters the respective dielectric pillars 9 from the gas chamber 7, and plasma jet is generated at the tip of the positive high-voltage electrode 1 in the respective dielectric pillars 9, as shown in fig. 4, which shows the plasma jet generated at the tip of each positive high-voltage electrode 1. The introduced working gas is simple substance gas or mixed gas containing simple substance gas, air, gaseous compound or gaseous organic matter.
In order to make the working gas introduced into the dielectric column 9 more uniform and stable, in another embodiment, the array type plasma jet device further comprises a mesh buffer layer 10, and a plurality of vent holes 11 are formed on the mesh buffer layer 10, as shown in fig. 2 and 3. The reticular buffer layer 10 is arranged inside the air cavity 7 and is positioned at the air inlet 8, the ventilation direction of the reticular buffer layer 10 is parallel to the ventilation direction of the air inlet 8, and the ventilation direction of the reticular buffer layer 10 is perpendicular to the ventilation direction of each medium column 9. After the working gas is introduced into the air cavity 7 through the air inlet 8, the working gas enters each medium column 9 through the vent holes 11 on the reticular buffer layer 10, so that the gas is ensured to uniformly and stably flow into the medium columns 9. The mesh-shaped buffer layer 10 is made of insulating resin material, the length and the width of the mesh-shaped buffer layer 10 are the same as the inner diameter of the air cavity 7, and the thickness of the mesh-shaped buffer layer 10 is 2 mm-4 mm.
Referring to fig. 6, in one embodiment, the insulating housing further includes an insulating handle 12 fixed with the main cavity 5, a hollow wire cavity 13 with two open ends is provided in the insulating handle 12, the wire connected to the positive high-voltage electrode 1 passes through the main cavity 5 and is led into one open end of the insulating handle 12, and the wire cavity 13 is led out from the other open end of the insulating handle 12 and is connected with the current-limiting resistor 3. The insulated handle 12 can be conveniently held and used. Optionally, the main cavity 5 is further provided with a protruding clamping groove 14, as shown in fig. 2, where an opening at one end of the insulating handle 12 is clamped on the clamping groove 14 of the main cavity 5, so as to realize detachable connection between the insulating handle 12 and the main cavity 5.
In addition, as shown in fig. 6, the array type plasma jet device further includes a gas reservoir 15, a gas pipe 16, and a gas flow control valve 17. Working gas is stored in the gas storage 15, the gas storage 15 is communicated with the gas inlet 8 through the gas pipe 16 to feed the working gas into the gas cavity 7, and the gas pipe 16 is provided with a gas flow control valve 17. The flow rate of the introduced working gas can be regulated through the gas flow control valve 17, when the flow rate of the introduced working gas is smaller, the length of the plasma jet generated by each positive high-voltage electrode 1 is shorter, the jet is more uniform, and when the flow rate of the introduced working gas is increased, the length of the plasma jet generated by the positive high-voltage electrode 1 is also increased. In one example, when the flow rate of the introduced working gas is 3L/min, the positive high-voltage electrode 1 can generate a plasma jet with the length of 2cm, and the whole array type plasma jet device can generate an array of the plasma jet with the length of 2cm through a plurality of positive high-voltage electrodes 1.
What has been described above is only a preferred embodiment of the present application, which is not limited to the above examples. It is to be understood that other modifications and variations which may be directly derived or contemplated by those skilled in the art without departing from the spirit and concepts of the present application are to be considered as being included within the scope of the present application.
Claims (10)
1. The array type plasma jet device is characterized by comprising an insulating shell, a plurality of positive high-voltage electrodes (1), a plurality of ground electrodes (2), a current-limiting resistor (3) and a high-voltage pulse power supply (4);
the insulating shell comprises a main cavity (5) and a dielectric column array (6) which are integrally manufactured, a hollow air cavity (7) is formed in the main cavity (5), an air inlet (8) communicated with the air cavity (7) is formed in the main cavity (5), the dielectric column array (6) comprises a plurality of dielectric columns (9) which are identical in specification and are arranged to form a row, the inside of each dielectric column (9) is hollow, one end of each dielectric column (9) is communicated with the air cavity (7), and the other end of each dielectric column is formed into an opening;
the outer wall of each medium column (9) is provided with a ground electrode (2) at the opening, a positive high-voltage electrode (1) is inserted into each medium column (9), the distance between the opening of each medium column (9) and the top end of the positive high-voltage electrode (1) inserted into the opening is gradually increased along the direction from the middle position of the medium column array (6) to the edge positions of the two sides, and the top end of each positive high-voltage electrode (1) does not exceed the opening of the medium column (9);
each positive high-voltage electrode (1) is connected with the positive electrode of the high-voltage pulse power supply (4) through the current limiting resistor (3), and each ground electrode (2) is grounded with the negative electrode of the high-voltage pulse power supply (4);
working gas is introduced into the air cavity (7) through the air inlet (8), enters each medium column (9) from the air cavity (7), and generates plasma jet at the top end of the positive high-voltage electrode (1) in each medium column (9).
2. The array type plasma jet device according to claim 1, further comprising a mesh-shaped buffer layer (10), wherein a plurality of vent holes (11) are formed in the mesh-shaped buffer layer (10); the reticular buffer layer (10) is arranged in the air cavity (7) and is positioned at the air inlet (8), the ventilation direction of the reticular buffer layer (10) is parallel to the ventilation direction of the air inlet (8), and the ventilation direction of the reticular buffer layer (10) is perpendicular to the ventilation direction of each medium column (9); after the working gas is introduced into the air cavity (7) through the air inlet (8), the working gas enters each medium column (9) through the vent holes (11) on the mesh buffer layer (10).
3. An array type plasma jet device according to claim 1, wherein the top ends of the respective positive high voltage electrodes (1) are arranged to form an arc shape, the distance between the opening of the medium column (9) at the middle position and the top end of the positive high voltage electrode (1) inserted therein is smallest, the distance between the opening of the medium column (9) at the both side edge positions and the top end of the positive high voltage electrode (1) inserted therein is largest, and the radius of curvature of the arc shape formed by the top ends of the respective positive high voltage electrodes (1) at the positive high voltage electrode (1) at the middle position is correlated with the distance between the adjacent two medium columns (9).
4. An array type plasma jet device according to claim 3, wherein the distance between two adjacent dielectric pillars (9) of the dielectric pillar array (6) is 1-2 cm, and the radius of curvature of the arc shape formed by the top ends of the respective positive high voltage electrodes (1) at the middle position is 25-60 mm.
5. An array type plasma jet device according to claim 1, characterized in that each ground electrode (2) is an annular structure formed by a metal foil with single-sided conduction, and each ground electrode (2) is sleeved on the outer wall of the opening of one dielectric column (9).
6. The array type plasma jet device according to claim 1, wherein the insulating housing further comprises an insulating handle (12) fixed with the main cavity (5), a wire cavity (13) with two open ends and hollow is formed in the insulating handle (12), a wire connected with the positive high-voltage electrode (1) penetrates out of the main cavity (5) and is led into an opening at one end of the insulating handle (12), and the wire cavity (13) is led out of an opening at the other end of the insulating handle (12) and is connected with the current limiting resistor (3).
7. The array type plasma jet device according to claim 6, wherein the main cavity (5) is further provided with a protruding clamping groove (14), and an opening at one end of the insulating handle (12) is clamped on the clamping groove (14) of the main cavity (5), so that the insulating handle (12) is detachably connected with the main cavity (5).
8. The array-type plasma jet device according to claim 1, further comprising a gas reservoir (15), a gas pipe (16) and a gas flow control valve (17); working gas is stored in the gas storage (15), the gas storage (15) is communicated with the gas inlet (8) through a gas pipe (16) to introduce the working gas into the gas cavity (7), and a gas flow control valve (17) is arranged on the gas pipe (16).
9. The array type plasma jet device according to claim 1, wherein a bending wire is bent to form a plurality of needle electrode structures with metal sharp corners, each needle electrode structure is formed into a positive high-voltage electrode (1) and the metal sharp corners are used as the top ends of the positive high-voltage electrodes (1), and two ends of the bending wire are connected and connected to the current limiting resistor (3); the bending wire comprises conductive metal and an insulating layer arranged outside the conductive metal, the curvature radius range of the bending wire is 0.05-0.5 mm, the diameter range is 0.5-2 mm, the resistivity range of the conductive metal in the bending wire is 0.017 omega-m-0.03 omega-m, the bending strength range is 80 mpa-140 mpa, the curvature radius of a metal sharp corner is 0.1-0.6 mm, and the thickness of the insulating layer of the bending wire is 0.05-0.1 mm, and the resistivity is 10 10 ~10 15 Omega.m, 3.6-11 MPa of tensile strength and 2-3 kV of pressure resistance.
10. The array type plasma jet device according to claim 1, wherein each dielectric column (9) is of a hollow cylindrical structure, the inner diameter of each dielectric column (9) is 1-2 mm, and the outer diameter is 3-4 mm; the air inlet (8) is of a hollow cylindrical structure, the inner diameter of the air inlet (8) is 6 mm-10 mm, and the outer diameter of the air inlet is 12 mm-16 mm.
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| CN202310544178.1A CN116390316B (en) | 2023-05-12 | 2023-05-12 | Array type plasma jet device |
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| CN202310544178.1A CN116390316B (en) | 2023-05-12 | 2023-05-12 | Array type plasma jet device |
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| CN116390316B true CN116390316B (en) | 2024-02-09 |
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| WO2005125286A2 (en) * | 2004-06-16 | 2005-12-29 | Je Plasmaconsult Gmbh | Device for the treatment of a substrate by means of at least one plasma jet |
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| US11202843B2 (en) * | 2017-05-18 | 2021-12-21 | The Board Of Trustees Of The University Of Illinois | Microplasma devices for surface or object treatment and biofilm removal |
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| WO2005125286A2 (en) * | 2004-06-16 | 2005-12-29 | Je Plasmaconsult Gmbh | Device for the treatment of a substrate by means of at least one plasma jet |
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