KR102071144B1 - 철-니켈 합금 섀도우 마스크 및 그 제조 방법 - Google Patents

철-니켈 합금 섀도우 마스크 및 그 제조 방법 Download PDF

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Publication number
KR102071144B1
KR102071144B1 KR1020180110752A KR20180110752A KR102071144B1 KR 102071144 B1 KR102071144 B1 KR 102071144B1 KR 1020180110752 A KR1020180110752 A KR 1020180110752A KR 20180110752 A KR20180110752 A KR 20180110752A KR 102071144 B1 KR102071144 B1 KR 102071144B1
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KR
South Korea
Prior art keywords
iron
nickel alloy
shadow mask
electroplating
alloy layer
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KR1020180110752A
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English (en)
Korean (ko)
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KR20190108029A (ko
Inventor
중광 판
선친 퉁
샤링 천
Original Assignee
어드밴텍 글로벌, 리미티드
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Application filed by 어드밴텍 글로벌, 리미티드 filed Critical 어드밴텍 글로벌, 리미티드
Publication of KR20190108029A publication Critical patent/KR20190108029A/ko
Application granted granted Critical
Publication of KR102071144B1 publication Critical patent/KR102071144B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/06—Screens for shielding; Masks interposed in the electron stream
    • H01J29/07—Shadow masks for colour television tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/388—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020180110752A 2018-03-13 2018-09-17 철-니켈 합금 섀도우 마스크 및 그 제조 방법 KR102071144B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810206291.8A CN108468072B (zh) 2018-03-13 2018-03-13 铁镍合金荫罩及其制备方法
CN201810206291.8 2018-03-13

Publications (2)

Publication Number Publication Date
KR20190108029A KR20190108029A (ko) 2019-09-23
KR102071144B1 true KR102071144B1 (ko) 2020-01-29

Family

ID=63265302

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180110752A KR102071144B1 (ko) 2018-03-13 2018-09-17 철-니켈 합금 섀도우 마스크 및 그 제조 방법

Country Status (3)

Country Link
JP (1) JP2019157264A (zh)
KR (1) KR102071144B1 (zh)
CN (1) CN108468072B (zh)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017204223A1 (ja) * 2016-05-23 2017-11-30 凸版印刷株式会社 蒸着用メタルマスク、蒸着用メタルマスクの製造方法、および、蒸着用メタルマスク形成基材

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JPS62109991A (ja) * 1985-07-29 1987-05-21 C Uyemura & Co Ltd 電気めつき液
JPS6342390A (ja) * 1986-08-08 1988-02-23 Seiko Instr & Electronics Ltd 電鋳用母型
JPH03229892A (ja) * 1990-02-05 1991-10-11 Mitsui Mining & Smelting Co Ltd 電解インバー複合箔
KR100505002B1 (ko) * 2003-04-24 2005-08-01 주식회사 나노인바 나노 인바합금 및 이의 제조방법
JP2005154879A (ja) * 2003-11-28 2005-06-16 Canon Components Inc 蒸着用メタルマスク及びそれを用いた蒸着パターンの製造方法
CN100449038C (zh) * 2005-12-06 2009-01-07 安泰科技股份有限公司 因瓦合金箔的制备方法
JP5478292B2 (ja) * 2010-02-18 2014-04-23 京都市 高硬度及び低熱膨張係数を有する鉄−ニッケル合金めっき皮膜の製造方法
KR101374690B1 (ko) * 2011-11-16 2014-03-31 한국생산기술연구원 Ｃｉｇｓ 태양전지용 철-니켈 합금 금속 포일 기판재
KR101422609B1 (ko) * 2011-11-17 2014-07-24 한국생산기술연구원 텍스처 구조를 갖는 열팽창 제어형 플렉서블 금속 기판재
CN103205695B (zh) * 2012-01-16 2015-11-25 昆山允升吉光电科技有限公司 一种蒸镀用掩模板及其制作工艺
CN103205702B (zh) * 2012-01-16 2015-09-23 昆山允升吉光电科技有限公司 用镍铁合金制备的蒸镀用金属掩模板
CN103205782A (zh) * 2012-01-16 2013-07-17 昆山允升吉光电科技有限公司 一种镍铁合金蒸镀掩模板的制备方法
CN103205714B (zh) * 2012-01-16 2015-06-10 昆山允升吉光电科技有限公司 一种蒸镀用金属掩模板及其制备方法
CN103205784A (zh) * 2012-01-16 2013-07-17 昆山允升吉光电科技有限公司 一种蒸镀掩模板的制备方法
CN103572206B (zh) * 2013-11-08 2019-01-15 昆山允升吉光电科技有限公司 一种复合掩模板组件的制作方法
CN105177496B (zh) * 2015-09-25 2019-06-04 信利（惠州）智能显示有限公司 掩膜板的制作方法
JP6639253B2 (ja) * 2016-02-08 2020-02-05 アルバック成膜株式会社 電鋳用マスク原版の機能部品、電鋳用マスク原版の機能部品の製造方法
KR102081191B1 (ko) * 2016-06-24 2020-02-26 에이피시스템 주식회사 전주도금법을 이용한 미세 금속 마스크 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017204223A1 (ja) * 2016-05-23 2017-11-30 凸版印刷株式会社 蒸着用メタルマスク、蒸着用メタルマスクの製造方法、および、蒸着用メタルマスク形成基材

Also Published As

Publication number Publication date
CN108468072B (zh) 2020-05-05
KR20190108029A (ko) 2019-09-23
CN108468072A (zh) 2018-08-31
JP2019157264A (ja) 2019-09-19

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