KR102044235B1 - 전자부품의 제조 방법 및 성막 장치 - Google Patents
전자부품의 제조 방법 및 성막 장치 Download PDFInfo
- Publication number
- KR102044235B1 KR102044235B1 KR1020170123194A KR20170123194A KR102044235B1 KR 102044235 B1 KR102044235 B1 KR 102044235B1 KR 1020170123194 A KR1020170123194 A KR 1020170123194A KR 20170123194 A KR20170123194 A KR 20170123194A KR 102044235 B1 KR102044235 B1 KR 102044235B1
- Authority
- KR
- South Korea
- Prior art keywords
- electronic component
- electronic components
- electronic
- metal film
- holder
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 99
- 229910052751 metal Inorganic materials 0.000 claims abstract description 99
- 239000007769 metal material Substances 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 27
- 230000001070 adhesive effect Effects 0.000 description 25
- 239000010410 layer Substances 0.000 description 20
- 230000004048 modification Effects 0.000 description 18
- 238000012986 modification Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 16
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 239000004020 conductor Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910010038 TiAl Inorganic materials 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2016-192042 | 2016-09-29 | ||
JP2016192042A JP2018056393A (ja) | 2016-09-29 | 2016-09-29 | 電子部品の製造方法および成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20180035687A KR20180035687A (ko) | 2018-04-06 |
KR102044235B1 true KR102044235B1 (ko) | 2019-11-13 |
Family
ID=61836010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020170123194A KR102044235B1 (ko) | 2016-09-29 | 2017-09-25 | 전자부품의 제조 방법 및 성막 장치 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2018056393A (ja) |
KR (1) | KR102044235B1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN118215995A (zh) * | 2021-11-10 | 2024-06-18 | 株式会社村田制作所 | 模块 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001244284A (ja) * | 2000-02-28 | 2001-09-07 | Nec Corp | 半導体装置およびその製造方法 |
JP2009044123A (ja) * | 2007-07-19 | 2009-02-26 | Citizen Finetech Miyota Co Ltd | 電子部品の製造方法および電子部品。 |
JP2016115722A (ja) * | 2014-12-11 | 2016-06-23 | アピックヤマダ株式会社 | 半導体製造装置、半導体装置、及び、半導体装置の製造方法 |
-
2016
- 2016-09-29 JP JP2016192042A patent/JP2018056393A/ja active Pending
-
2017
- 2017-09-25 KR KR1020170123194A patent/KR102044235B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001244284A (ja) * | 2000-02-28 | 2001-09-07 | Nec Corp | 半導体装置およびその製造方法 |
JP2009044123A (ja) * | 2007-07-19 | 2009-02-26 | Citizen Finetech Miyota Co Ltd | 電子部品の製造方法および電子部品。 |
JP2016115722A (ja) * | 2014-12-11 | 2016-06-23 | アピックヤマダ株式会社 | 半導体製造装置、半導体装置、及び、半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20180035687A (ko) | 2018-04-06 |
JP2018056393A (ja) | 2018-04-05 |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant |