KR102026506B1 - 다층 반도체 디바이스들의 제조에서의 저온 층 전이를 위한 방법 - Google Patents

다층 반도체 디바이스들의 제조에서의 저온 층 전이를 위한 방법 Download PDF

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Publication number
KR102026506B1
KR102026506B1 KR1020157020111A KR20157020111A KR102026506B1 KR 102026506 B1 KR102026506 B1 KR 102026506B1 KR 1020157020111 A KR1020157020111 A KR 1020157020111A KR 20157020111 A KR20157020111 A KR 20157020111A KR 102026506 B1 KR102026506 B1 KR 102026506B1
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South Korea
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single crystal
front surface
crystal silicon
silicon substrate
wafer
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Korean (ko)
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KR20150099847A (ko
Inventor
제프리 루이스 리버트
마이클 제이. 리에스
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글로벌웨이퍼스 씨오., 엘티디.
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    • H01L21/76254—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H01L21/265—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
KR1020157020111A 2012-12-28 2013-12-23 다층 반도체 디바이스들의 제조에서의 저온 층 전이를 위한 방법 Active KR102026506B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261746822P 2012-12-28 2012-12-28
US61/746,822 2012-12-28
PCT/US2013/077491 WO2014105828A1 (en) 2012-12-28 2013-12-23 Method for low temperature layer transfer in the preparation of multilayer semiconductor devices

Publications (2)

Publication Number Publication Date
KR20150099847A KR20150099847A (ko) 2015-09-01
KR102026506B1 true KR102026506B1 (ko) 2019-09-27

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KR1020157020111A Active KR102026506B1 (ko) 2012-12-28 2013-12-23 다층 반도체 디바이스들의 제조에서의 저온 층 전이를 위한 방법

Country Status (6)

Country Link
US (1) US9281233B2 (https=)
JP (2) JP2016508291A (https=)
KR (1) KR102026506B1 (https=)
DE (1) DE112013006244B4 (https=)
TW (1) TWI603387B (https=)
WO (1) WO2014105828A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015210384A1 (de) 2015-06-05 2016-12-08 Soitec Verfahren zur mechanischen Trennung für eine Doppelschichtübertragung
JP6632462B2 (ja) * 2016-04-28 2020-01-22 信越化学工業株式会社 複合ウェーハの製造方法
WO2019236320A1 (en) * 2018-06-08 2019-12-12 Globalwafers Co., Ltd. Method for transfer of a thin layer of silicon
CN110739217B (zh) * 2019-10-28 2025-10-10 沈阳硅基科技有限公司 一种降低soi硅片应力的制备方法
PL445432A1 (pl) * 2023-06-30 2025-01-07 Sieć Badawcza Łukasiewicz - Instytut Mikroelektroniki I Fotoniki Sposób modyfikacji podłoża z monokrystalicznego SiC, zmodyfikowane podłoże, urządzenie zawierające takie podłoże i zastosowanie takiego urządzenia

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2010278342A (ja) * 2009-05-29 2010-12-09 Shin-Etsu Chemical Co Ltd Ｓｏｉ基板の製造方法

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JP2617798B2 (ja) 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
FR2748851B1 (fr) * 1996-05-15 1998-08-07 Commissariat Energie Atomique Procede de realisation d'une couche mince de materiau semiconducteur
FR2774511B1 (fr) * 1998-01-30 2002-10-11 Commissariat Energie Atomique Substrat compliant en particulier pour un depot par hetero-epitaxie
JP3456521B2 (ja) * 1998-05-12 2003-10-14 三菱住友シリコン株式会社 Ｓｏｉ基板の製造方法
FR2797347B1 (fr) * 1999-08-04 2001-11-23 Commissariat Energie Atomique Procede de transfert d'une couche mince comportant une etape de surfragililisation
FR2809867B1 (fr) * 2000-05-30 2003-10-24 Commissariat Energie Atomique Substrat fragilise et procede de fabrication d'un tel substrat
KR100511656B1 (ko) * 2002-08-10 2005-09-07 주식회사 실트론 나노 에스오아이 웨이퍼의 제조방법 및 그에 따라 제조된나노 에스오아이 웨이퍼
FR2847075B1 (fr) * 2002-11-07 2005-02-18 Commissariat Energie Atomique Procede de formation d'une zone fragile dans un substrat par co-implantation
US20060240275A1 (en) * 2005-04-25 2006-10-26 Gadkaree Kishor P Flexible display substrates
FR2898431B1 (fr) * 2006-03-13 2008-07-25 Soitec Silicon On Insulator Procede de fabrication de film mince
US7575988B2 (en) * 2006-07-11 2009-08-18 S.O.I.Tec Silicon On Insulator Technologies Method of fabricating a hybrid substrate
FR2914110B1 (fr) * 2007-03-20 2009-06-05 Soitec Silicon On Insulator Procede de fabrication d'un substrat hybride
JP2008153411A (ja) * 2006-12-18 2008-07-03 Shin Etsu Chem Co Ltd Ｓｏｉ基板の製造方法
US7795111B2 (en) * 2007-06-27 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of SOI substrate and manufacturing method of semiconductor device
JP4631946B2 (ja) * 2008-08-11 2011-02-16 住友電気工業株式会社 Ｉｉｉ族窒化物半導体層貼り合わせ基板の製造方法
US9257328B2 (en) 2008-11-26 2016-02-09 Corning Incorporated Glass-ceramic-based semiconductor-on-insulator structures and method for making the same
US8367519B2 (en) * 2009-12-30 2013-02-05 Memc Electronic Materials, Inc. Method for the preparation of a multi-layered crystalline structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010278342A (ja) * 2009-05-29 2010-12-09 Shin-Etsu Chemical Co Ltd Ｓｏｉ基板の製造方法

Also Published As

Publication number Publication date
TWI603387B (zh) 2017-10-21
WO2014105828A1 (en) 2014-07-03
JP2018085536A (ja) 2018-05-31
US9281233B2 (en) 2016-03-08
US20140187020A1 (en) 2014-07-03
JP2016508291A (ja) 2016-03-17
DE112013006244B4 (de) 2020-03-05
DE112013006244T5 (de) 2015-10-08
TW201435991A (zh) 2014-09-16
KR20150099847A (ko) 2015-09-01

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