KR102010158B1 - 성막장치, 성막방법 및 이를 사용한 유기 el 표시 장치의 제조방법 - Google Patents

성막장치, 성막방법 및 이를 사용한 유기 el 표시 장치의 제조방법 Download PDF

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KR102010158B1
KR102010158B1 KR1020170180325A KR20170180325A KR102010158B1 KR 102010158 B1 KR102010158 B1 KR 102010158B1 KR 1020170180325 A KR1020170180325 A KR 1020170180325A KR 20170180325 A KR20170180325 A KR 20170180325A KR 102010158 B1 KR102010158 B1 KR 102010158B1
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substrate
support member
support
supporting
film forming
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KR20190078432A (ko
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카즈히토 카시쿠라
히로시 이시이
테루유키 호소야
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캐논 톡키 가부시키가이샤
주식회사 아오이
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Priority to KR1020170180325A priority Critical patent/KR102010158B1/ko
Priority to JP2018160255A priority patent/JP7120545B2/ja
Priority to CN201811009948.8A priority patent/CN109957774A/zh
Publication of KR20190078432A publication Critical patent/KR20190078432A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H01L51/56—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L51/0002—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020170180325A 2017-12-26 2017-12-26 성막장치, 성막방법 및 이를 사용한 유기 el 표시 장치의 제조방법 Active KR102010158B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020170180325A KR102010158B1 (ko) 2017-12-26 2017-12-26 성막장치, 성막방법 및 이를 사용한 유기 el 표시 장치의 제조방법
JP2018160255A JP7120545B2 (ja) 2017-12-26 2018-08-29 成膜装置、成膜方法及びこれを用いる有機ｅｌ表示装置の製造方法
CN201811009948.8A CN109957774A (zh) 2017-12-26 2018-08-31 成膜装置、成膜方法及有机el显示装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170180325A KR102010158B1 (ko) 2017-12-26 2017-12-26 성막장치, 성막방법 및 이를 사용한 유기 el 표시 장치의 제조방법

Publications (2)

Publication Number Publication Date
KR20190078432A KR20190078432A (ko) 2019-07-04
KR102010158B1 true KR102010158B1 (ko) 2019-08-12

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JP (1) JP7120545B2 (enExample)
KR (1) KR102010158B1 (enExample)
CN (1) CN109957774A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101933807B1 (ko) * 2017-11-29 2018-12-28 캐논 톡키 가부시키가이샤 성막장치 및 이를 사용한 유기 el 표시장치의 제조방법
JP7057337B2 (ja) * 2019-10-29 2022-04-19 キヤノントッキ株式会社 基板剥離装置、基板処理装置、及び基板剥離方法
JP7057335B2 (ja) * 2019-10-29 2022-04-19 キヤノントッキ株式会社 基板保持装置、基板処理装置、基板保持方法、成膜方法、及び電子デバイスの製造方法
CN113005398B (zh) * 2019-12-20 2023-04-07 佳能特机株式会社 成膜装置、成膜方法及电子器件的制造方法
JP7299202B2 (ja) * 2020-09-30 2023-06-27 キヤノントッキ株式会社 成膜装置、基板吸着方法、及び電子デバイスの製造方法
JP7744140B2 (ja) 2021-02-26 2025-09-25 キヤノントッキ株式会社 成膜装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000243816A (ja) * 1999-02-22 2000-09-08 Hitachi Electronics Eng Co Ltd 基板チャック装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05343507A (ja) * 1992-06-10 1993-12-24 Fujitsu Ltd 静電吸着方法
JP4184771B2 (ja) * 2002-11-27 2008-11-19 株式会社アルバック アライメント装置、成膜装置
WO2005091683A1 (en) * 2004-03-22 2005-09-29 Doosan Dnd Co., Ltd. Substrate depositing method and organic material depositing apparatus
WO2010106958A1 (ja) * 2009-03-18 2010-09-23 株式会社アルバック 位置合わせ方法、蒸着方法
JP2014120740A (ja) * 2012-12-19 2014-06-30 Tokyo Electron Ltd 基板処理装置、及び基板の張り付け又は剥離方法
CN107111972B (zh) * 2014-10-28 2020-04-28 株式会社半导体能源研究所 功能面板、功能面板的制造方法、模块、数据处理装置
SG11201710300SA (en) * 2015-06-12 2018-01-30 Ulvac Inc Substrate holding device, film deposition device, and substrate holding method
KR102490641B1 (ko) * 2015-11-25 2023-01-20 삼성디스플레이 주식회사 증착 장치 및 증착 방법
KR101944197B1 (ko) * 2017-11-29 2019-01-30 캐논 톡키 가부시키가이샤 성막장치, 성막방법 및 이를 사용한 유기 el 표시 장치의 제조방법
KR101933807B1 (ko) * 2017-11-29 2018-12-28 캐논 톡키 가부시키가이샤 성막장치 및 이를 사용한 유기 el 표시장치의 제조방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000243816A (ja) * 1999-02-22 2000-09-08 Hitachi Electronics Eng Co Ltd 基板チャック装置

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CN109957774A (zh) 2019-07-02
JP7120545B2 (ja) 2022-08-17
KR20190078432A (ko) 2019-07-04
JP2019117922A (ja) 2019-07-18

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