CN109957774A - 成膜装置、成膜方法及有机el显示装置的制造方法 - Google Patents

成膜装置、成膜方法及有机el显示装置的制造方法 Download PDF

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Publication number
CN109957774A
CN109957774A CN201811009948.8A CN201811009948A CN109957774A CN 109957774 A CN109957774 A CN 109957774A CN 201811009948 A CN201811009948 A CN 201811009948A CN 109957774 A CN109957774 A CN 109957774A
Authority
CN
China
Prior art keywords
substrate
bearing part
supporting
film formation
bearing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811009948.8A
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English (en)
Chinese (zh)
Inventor
柏仓一史
石井博
细谷映之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AOI Co Ltd
Canon Tokki Corp
Original Assignee
AOI Co Ltd
Tokki Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AOI Co Ltd, Tokki Corp filed Critical AOI Co Ltd
Publication of CN109957774A publication Critical patent/CN109957774A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201811009948.8A 2017-12-26 2018-08-31 成膜装置、成膜方法及有机el显示装置的制造方法 Pending CN109957774A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2017-0180325 2017-12-26
KR1020170180325A KR102010158B1 (ko) 2017-12-26 2017-12-26 성막장치, 성막방법 및 이를 사용한 유기 el 표시 장치의 제조방법

Publications (1)

Publication Number Publication Date
CN109957774A true CN109957774A (zh) 2019-07-02

Family

ID=67023186

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811009948.8A Pending CN109957774A (zh) 2017-12-26 2018-08-31 成膜装置、成膜方法及有机el显示装置的制造方法

Country Status (3)

Country Link
JP (1) JP7120545B2 (enExample)
KR (1) KR102010158B1 (enExample)
CN (1) CN109957774A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113005398A (zh) * 2019-12-20 2021-06-22 佳能特机株式会社 成膜装置、成膜方法及电子器件的制造方法
CN116043181A (zh) * 2017-11-29 2023-05-02 佳能特机株式会社 成膜装置及使用其的有机el显示装置的制造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7057337B2 (ja) * 2019-10-29 2022-04-19 キヤノントッキ株式会社 基板剥離装置、基板処理装置、及び基板剥離方法
JP7057335B2 (ja) * 2019-10-29 2022-04-19 キヤノントッキ株式会社 基板保持装置、基板処理装置、基板保持方法、成膜方法、及び電子デバイスの製造方法
JP7299202B2 (ja) * 2020-09-30 2023-06-27 キヤノントッキ株式会社 成膜装置、基板吸着方法、及び電子デバイスの製造方法
JP7744140B2 (ja) 2021-02-26 2025-09-25 キヤノントッキ株式会社 成膜装置

Citations (4)

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JP2004176124A (ja) * 2002-11-27 2004-06-24 Ulvac Japan Ltd アライメント装置、成膜装置及びアライメント方法
WO2010106958A1 (ja) * 2009-03-18 2010-09-23 株式会社アルバック 位置合わせ方法、蒸着方法
CN109837510A (zh) * 2017-11-29 2019-06-04 佳能特机株式会社 成膜装置及使用其的有机el显示装置的制造方法
CN109837519A (zh) * 2017-11-29 2019-06-04 佳能特机株式会社 成膜装置、成膜方法及有机el显示装置的制造方法

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JPH05343507A (ja) * 1992-06-10 1993-12-24 Fujitsu Ltd 静電吸着方法
JP2000243816A (ja) * 1999-02-22 2000-09-08 Hitachi Electronics Eng Co Ltd 基板チャック装置
WO2005091683A1 (en) * 2004-03-22 2005-09-29 Doosan Dnd Co., Ltd. Substrate depositing method and organic material depositing apparatus
JP2014120740A (ja) * 2012-12-19 2014-06-30 Tokyo Electron Ltd 基板処理装置、及び基板の張り付け又は剥離方法
CN107111972B (zh) * 2014-10-28 2020-04-28 株式会社半导体能源研究所 功能面板、功能面板的制造方法、模块、数据处理装置
SG11201710300SA (en) * 2015-06-12 2018-01-30 Ulvac Inc Substrate holding device, film deposition device, and substrate holding method
KR102490641B1 (ko) * 2015-11-25 2023-01-20 삼성디스플레이 주식회사 증착 장치 및 증착 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004176124A (ja) * 2002-11-27 2004-06-24 Ulvac Japan Ltd アライメント装置、成膜装置及びアライメント方法
WO2010106958A1 (ja) * 2009-03-18 2010-09-23 株式会社アルバック 位置合わせ方法、蒸着方法
CN109837510A (zh) * 2017-11-29 2019-06-04 佳能特机株式会社 成膜装置及使用其的有机el显示装置的制造方法
CN109837519A (zh) * 2017-11-29 2019-06-04 佳能特机株式会社 成膜装置、成膜方法及有机el显示装置的制造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116043181A (zh) * 2017-11-29 2023-05-02 佳能特机株式会社 成膜装置及使用其的有机el显示装置的制造方法
CN116043181B (zh) * 2017-11-29 2025-08-22 佳能特机株式会社 成膜装置及使用其的有机el显示装置的制造方法
CN113005398A (zh) * 2019-12-20 2021-06-22 佳能特机株式会社 成膜装置、成膜方法及电子器件的制造方法
CN113005398B (zh) * 2019-12-20 2023-04-07 佳能特机株式会社 成膜装置、成膜方法及电子器件的制造方法

Also Published As

Publication number Publication date
JP7120545B2 (ja) 2022-08-17
KR20190078432A (ko) 2019-07-04
JP2019117922A (ja) 2019-07-18
KR102010158B1 (ko) 2019-08-12

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