KR102004873B1 - 방향성 응고 시스템 및 방법 - Google Patents

방향성 응고 시스템 및 방법 Download PDF

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KR102004873B1
KR102004873B1 KR1020147009656A KR20147009656A KR102004873B1 KR 102004873 B1 KR102004873 B1 KR 102004873B1 KR 1020147009656 A KR1020147009656 A KR 1020147009656A KR 20147009656 A KR20147009656 A KR 20147009656A KR 102004873 B1 KR102004873 B1 KR 102004873B1
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South Korea
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delete delete
mold
wall
thickness
silicon
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KR1020147009656A
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English (en)
Korean (ko)
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KR20140086966A (ko
Inventor
압달라 노우리
카멜 오낫젤라
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실리코르 머티리얼즈 인코포레이티드
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
    • B22D27/00—Treating the metal in the mould while it is molten or ductile ; Pressure or vacuum casting
    • B22D27/04—Influencing the temperature of the metal, e.g. by heating or cooling the mould
    • B22D27/045—Directionally solidified castings
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Furnace Housings, Linings, Walls, And Ceilings (AREA)
  • Furnace Details (AREA)
KR1020147009656A 2011-09-16 2012-09-14 방향성 응고 시스템 및 방법 Expired - Fee Related KR102004873B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/234,960 US9352389B2 (en) 2011-09-16 2011-09-16 Directional solidification system and method
US13/234,960 2011-09-16
PCT/US2012/055510 WO2013040410A1 (en) 2011-09-16 2012-09-14 Directional solidification system and method

Publications (2)

Publication Number Publication Date
KR20140086966A KR20140086966A (ko) 2014-07-08
KR102004873B1 true KR102004873B1 (ko) 2019-07-29

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Application Number Title Priority Date Filing Date
KR1020147009656A Expired - Fee Related KR102004873B1 (ko) 2011-09-16 2012-09-14 방향성 응고 시스템 및 방법

Country Status (8)

Country Link
US (3) US9352389B2 (enExample)
EP (1) EP2755911A1 (enExample)
JP (1) JP2014534401A (enExample)
KR (1) KR102004873B1 (enExample)
CN (2) CN103813983B (enExample)
BR (1) BR112014006098A2 (enExample)
TW (1) TW201319337A (enExample)
WO (1) WO2013040410A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9352389B2 (en) * 2011-09-16 2016-05-31 Silicor Materials, Inc. Directional solidification system and method
TWI532890B (zh) * 2012-06-25 2016-05-11 希利柯爾材料股份有限公司 矽之控制定向固化
TWI643983B (zh) 2013-03-14 2018-12-11 美商希利柯爾材料股份有限公司 定向凝固系統及方法
CN103397377B (zh) * 2013-07-25 2016-03-30 青岛隆盛晶硅科技有限公司 多晶硅均匀长晶工艺及其铸锭炉热场加热装置
WO2015023847A1 (en) * 2013-08-16 2015-02-19 Georgia Tech Research Corporation Systems and methods for thermophotovoltaics with storage
CN103469305B (zh) * 2013-08-23 2016-01-20 江苏中电振华晶体技术有限公司 蓝宝石晶体长晶方法及其专用长晶设备
CN103551508A (zh) * 2013-11-14 2014-02-05 邵宏 带散热功能的节能型下金属模
CN108917412A (zh) * 2018-06-29 2018-11-30 河南玉发磨料有限公司 一种白刚玉块余热利用系统
CN111570765A (zh) * 2020-06-23 2020-08-25 西安汇创贵金属新材料研究院有限公司 一种改善双层模具铸锭表面缺陷的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010069784A1 (fr) * 2008-12-19 2010-06-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Four de fusion-solidification comportant une modulation des échanges thermiques par les parois latérales

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL148939B (nl) 1970-12-18 1976-03-15 Koninklijke Hoogovens En Staal Bodem van een schachtoven, in het bijzonder van een hoogoven voor ijzerproduktie.
DE4018967A1 (de) 1990-06-13 1991-12-19 Wacker Chemitronic Verfahren und vorrichtung zum giessen von siliciumbloecken mit kolumnarstruktur als grundmaterial fuer solarzellen
US5398745A (en) * 1993-05-07 1995-03-21 Pcc Composites, Inc. Method of directionally cooling using a fluid pressure induced thermal gradient
CN1092602C (zh) * 1996-10-14 2002-10-16 川崎制铁株式会社 多晶硅的制造方法和装置
JP3325900B2 (ja) * 1996-10-14 2002-09-17 川崎製鉄株式会社 多結晶シリコンの製造方法及び装置、並びに太陽電池用シリコン基板の製造方法
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置
JPH11310496A (ja) 1998-02-25 1999-11-09 Mitsubishi Materials Corp 一方向凝固組織を有するシリコンインゴットの製造方法およびその製造装置
DE19912484A1 (de) 1999-03-19 2000-09-28 Freiberger Compound Mat Gmbh Vorrichtung zur Herstellung von Einkristallen
US20040187767A1 (en) * 2002-10-24 2004-09-30 Intel Corporation Device and method for multicrystalline silicon wafers
JP4777880B2 (ja) * 2004-03-29 2011-09-21 京セラ株式会社 シリコン鋳造装置およびシリコンインゴットの製造方法
US7141114B2 (en) * 2004-06-30 2006-11-28 Rec Silicon Inc Process for producing a crystalline silicon ingot
US8268074B2 (en) 2005-02-03 2012-09-18 Rec Scan Wafer As Method and device for producing oriented solidified blocks made of semi-conductor material
CN101070608B (zh) * 2006-12-29 2010-06-23 嘉兴学院 旋转多坩埚下降法晶体生长系统
CN101008100B (zh) * 2006-12-29 2010-05-19 嘉兴学院 温梯法旋转多坩埚晶体生长系统
US20080257254A1 (en) 2007-04-17 2008-10-23 Dieter Linke Large grain, multi-crystalline semiconductor ingot formation method and system
CN100595352C (zh) * 2007-07-17 2010-03-24 佳科太阳能硅(龙岩)有限公司 太阳能级多晶硅大锭的制备方法
CN101755075A (zh) * 2007-07-20 2010-06-23 Bp北美公司 从籽晶制造浇铸硅的方法和装置
CN101835927B (zh) * 2007-10-23 2013-05-01 圣戈本陶瓷及塑料股份有限公司 闪烁体晶体以及形成方法
TW200928018A (en) * 2007-12-21 2009-07-01 Green Energy Technology Inc Crystal-growing furnace with convectional cooling structure
FR2935636B1 (fr) 2008-09-05 2011-06-24 Commissariat Energie Atomique Materiau a architecture multicouche, dedie a une mise en contact avec du silicium liquide
CN101898763B (zh) * 2009-05-25 2012-09-05 高向瞳 一种电场定向凝固提纯多晶硅的制备方法
US20110177284A1 (en) 2009-07-16 2011-07-21 Memc Singapore Pte Ltd. Silicon wafers and ingots with reduced oxygen content and methods for producing them
JP5504793B2 (ja) * 2009-09-26 2014-05-28 東京エレクトロン株式会社 熱処理装置及び冷却方法
CN101928003B (zh) 2010-08-24 2012-10-24 佳科太阳能硅(龙岩)有限公司 太阳能多晶硅钟罩式ds提纯炉
FR2964117B1 (fr) 2010-08-27 2012-09-28 Commissariat Energie Atomique Creuset pour la solidification de lingot de silicium
US8562740B2 (en) * 2010-11-17 2013-10-22 Silicor Materials Inc. Apparatus for directional solidification of silicon including a refractory material
CN102080259B (zh) 2011-03-10 2012-12-26 无锡开日能源科技股份有限公司 多晶硅铸锭炉的三段式热场
US9352389B2 (en) 2011-09-16 2016-05-31 Silicor Materials, Inc. Directional solidification system and method
CN102701213B (zh) 2012-06-28 2015-02-11 佳科太阳能硅(龙岩)有限公司 定向凝固冶金法太阳能多晶硅提纯设备
DE102012218647A1 (de) 2012-10-12 2014-04-17 Schneider Electric Industries Sas Bedieneinheit
TWI643983B (zh) 2013-03-14 2018-12-11 美商希利柯爾材料股份有限公司 定向凝固系統及方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010069784A1 (fr) * 2008-12-19 2010-06-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Four de fusion-solidification comportant une modulation des échanges thermiques par les parois latérales

Also Published As

Publication number Publication date
TW201319337A (zh) 2013-05-16
CN103813983A (zh) 2014-05-21
US20190060990A1 (en) 2019-02-28
WO2013040410A1 (en) 2013-03-21
US20160271692A1 (en) 2016-09-22
CN105964992A (zh) 2016-09-28
US20120067540A1 (en) 2012-03-22
JP2014534401A (ja) 2014-12-18
KR20140086966A (ko) 2014-07-08
CN105964992B (zh) 2018-06-22
EP2755911A1 (en) 2014-07-23
BR112014006098A2 (pt) 2017-04-04
US9352389B2 (en) 2016-05-31
CN103813983B (zh) 2016-06-29

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