KR101983776B1 - Light emitting device package - Google Patents

Abstract

Embodiments include a package body having a cavity open at least in part; A light emitting element disposed in the cavity to emit light through the open area of the cavity; Located on at least a portion of the package body includes a thermal sensor for measuring the temperature of the light emitting device, the thermal sensor provides a light emitting device package in contact with the package body and the insulating layer therebetween.

Description

Light emitting device package {LIGHT EMITTING DEVICE PACKAGE}

An embodiment relates to a light emitting device package.

Light emitting devices such as light emitting diodes or laser diodes using semiconductors of Group 3-5 or 2-6 compound semiconductor materials of semiconductors have various colors such as red, green, blue and ultraviolet rays due to the development of thin film growth technology and device materials. By using fluorescent materials or combining colors, efficient white light can be realized, and low power consumption, semi-permanent life, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps. Has the advantage of sex.

Therefore, a white light emitting device that can replace a fluorescent light bulb or an incandescent bulb that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device. Applications are expanding to diode lighting devices, automotive headlights and traffic lights.

1 is a view showing a conventional light emitting device package.

In the light emitting device package 100, a cavity structure is formed in the package body 110, a light emitting device 10 is disposed on a bottom surface of the cavity, and a heat dissipation unit (not shown) is disposed below the package body 110. Can be.

The first lead frame 121 and the second lead frame 122 are disposed in the package body, and the first and second lead frames 121 and 122 are extended to the bottom surface of the cavity to be electrically connected to the light emitting device 10. Can be connected.

The light emitting device 10 may be electrically connected to the first lead frame 121 and the conductive adhesive 130, and may be connected to the second lead frame 122 by a wire 140.

The molding unit 160 including the phosphor 150 is filled in the cavity to protect the light emitting device 10, the wire 140, and the like from an external force, and the first wavelength region emitted from the light emitting device 10. The phosphor 150 may be excited by the light to emit light in the second wavelength region.

However, the conventional light emitting device package has the following problems.

Heat is also emitted from the light emitting device in addition to the light of the first wavelength region described above, and the heat may affect the driving environment of the light emitting device, and even the light emitting devices manufactured to the same specification may have slightly different amounts of heat emitted. In general, the light emitting device may increase in temperature to about 60 to 80 degrees Celsius during driving, and there may be times when the temperature of the light emitting device package needs to be adjusted according to an external environment such as brightness of a place where the light emitting device package is disposed. Therefore, it is necessary to adjust the temperature of the light emitting device package by measuring the heat of the light emitting device or the surroundings.

The embodiment is intended to control the heat generation of the light emitting device by sensing the temperature / heat of the light emitting device to the surroundings in the light emitting device package.

Embodiments include a package body having a cavity open at least in part; A light emitting element disposed in the cavity to emit light through the open area of the cavity; Located on at least a portion of the package body includes a thermal sensor for measuring the temperature of the light emitting device, the thermal sensor provides a light emitting device package in contact with the package body and the insulating layer therebetween.

The thermal sensor may include a heat sensing unit and an electrode pad.

The heat sensing unit and the electrode pad may contact each other with the heat transfer unit therebetween.

The heat transfer part may include titanium (Ti), and the heat transfer part may have a thickness of 25 nanometers to 100 nanometers.

The heat sensing part may include nickel (Ni), and the heat sensing part may have a thickness of 100 nanometers to 500 nanometers.

The electrode layer may include aluminum (Al) and have a thickness of 100 nanometers to 500 nanometers.

The thermal sensor may range in size from 0.5 micrometers to 1.5 micrometers.

In the light emitting device package according to the embodiment, a thermal sensor having a thin film shape may be easily formed integrally with a manufacturing process of the package body, and thus may be advantageous for light sensing of the light emitting device or the surroundings.

1 is a view showing a conventional light emitting device package,
Figure 2 is a block diagram showing the configuration of an embodiment of a light emitting device package,
3A and 3B illustrate an embodiment of a light emitting device package.
4A to 4C are cross-sectional views taken along lines A-A ', B-B', and C-C 'of FIG. 3A, respectively;
5 is a view showing in detail the thermal sensor of Figure 3a,
6a and 6b are views showing another embodiment of the light emitting device package,
7a and 7b are views showing another embodiment of the light emitting device package,
8A and 8B are detailed views of the optical sensor of FIG. 7A;
9A to 9D are views illustrating a manufacturing process of an optical sensor,
10 is a view illustrating an embodiment of a lighting device in which a light emitting device package is disposed;
11 is a diagram illustrating an embodiment of an image display apparatus in which a light emitting device package is disposed.

Hereinafter, with reference to the accompanying drawings an embodiment of the present invention that can specifically realize the above object.

In the description of the embodiment according to the present invention, when described as being formed on the "on or under" of each element, the above (on) or below (on) or under) includes both two elements being directly contacted with each other or one or more other elements are formed indirectly between the two elements. In addition, when expressed as “on” or “under”, it may include the meaning of the downward direction as well as the upward direction based on one element.

2 is a block diagram showing a configuration of an embodiment of a light emitting device package.

The light emitting device package according to the embodiment may include a light emitting device, a thermal sensor and a control circuit integrally formed with the above-described wafer in a package made of one wafer. When the thermal sensor is integrally formed with the wafer constituting the package body, the thermal sensor may be disposed on a portion of the package body as described below, thereby reducing manufacturing cost and time.

3A and 3B are views illustrating an embodiment of a light emitting device package, and FIGS. 4A to 4C are cross-sectional views taken along lines A-A ', B-B', and C-C ', respectively, of FIG. 3A. Hereinafter, an embodiment of the light emitting device package will be described with reference to FIGS. 3A to 4C.

As shown, in the light emitting device package 200 according to the embodiment, the light emitting device 10 and the thermal sensor 400 are disposed on the package body 210. The package body 210 may be formed of a silicon wafer, and a cavity having an open upper portion may be formed in a portion thereof.

The cavity may be formed by etching or forming the silicon wafer after depositing or forming the thermal sensor 400 on the silicon wafer forming the package body 200. Although not shown, a resin or the like including a phosphor or the like is formed inside the cavity to protect the light emitting device and the wire, and the phosphor is excited by the light in the first wavelength region emitted from the light emitting device so that the second wavelength is excited. It can emit light of the area.

Although the package body 210 is shown in the shape of a cuboid, the package body 210 may have the shape of any polyhedron.

The center portion of the package body 210 is recessed to form a cavity so that the light emitting device 10 is disposed on the bottom surface of the cavity, and sidewalls are formed on the bottom surface of the cavity, and the package is formed at the outside of the cavity consisting of the bottom surface and the sidewalls. The body 210 may be disposed relatively high to form a protrusion, and the thermal sensor 400 may be disposed on the protrusion.

The surface shape of the cavity may be polygonal, circular or elliptical in addition to the shape shown, and may have a shape having a larger area than the area of the bottom surface. The cavity may be formed by another method in addition to the dry etching or the wet etching process for the package body 210.

The insulating layer 215 may be formed to surround the package body 210. When the package body 210 is made of silicon, which is a semiconductor material, the package body 210 may be formed of the light emitting device 10, the thermal sensor 400, or the like. The first electrode layer 221 and the second electrode layer 222 may be electrically insulated from each other.

The insulating layer 215 may be formed of silicon oxide such as SiO ₂ , silicon nitride such as Si ₃ N ₄ , or an insulating material such as aluminum nitride (AlN) or silicon carbide (SiC).

A light emitting diode (LED) may be used as the light emitting device 10, and may be a blue light emitting diode or a light emitting diode emitting ultraviolet rays or deep ultraviolet rays, depending on the wavelength region of the emitted light. The light emitting device may be a horizontal light emitting device, a vertical light emitting device, or a flip chip type light emitting device, and two or more light emitting devices may be disposed.

When the light emitting device 10 is a light emitting diode, the light emitting device 10 may include a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.

The first conductivity type semiconductor layer may be formed of a semiconductor compound, for example, may be formed of a compound semiconductor such as Groups 3-5 or 2-6. In addition, the first conductivity type dopant may be doped. When the first conductivity type semiconductor layer is an n type semiconductor layer, the first conductivity type dopant may include Si, Ge, Sn, Se, Te as an n type dopant, but is not limited thereto.

The first conductive semiconductor layer may be formed of only the first conductive semiconductor layer or may further include an undoped semiconductor layer under the first conductive semiconductor layer, but is not limited thereto.

The undoped semiconductor layer is a layer formed to improve the crystallinity of the first conductivity type semiconductor layer, except that the n-type dopant is not doped and thus has lower electrical conductivity than the first conductivity type semiconductor layer. It may be the same as the first conductive semiconductor layer.

An active layer may be formed on the first conductive semiconductor layer. In the active layer, electrons injected through the first conductive semiconductor layer and holes injected through the second conductive semiconductor layer formed thereafter meet each other to emit light having energy determined by an energy band inherent to the active layer (light emitting layer) material. It is a layer.

The active layer may be formed of at least one of a double junction structure, a single well structure, a multi well structure, a quantum-wire structure, or a quantum dot structure. For example, the active layer may be injected with trimethyl gallium gas (TMGa), ammonia gas (NH ₃ ), nitrogen gas (N ₂ ), and trimethyl indium gas (TMIn) to form a multi-quantum well structure, but is not limited thereto. It is not.

The well layer / barrier layer of the active layer is formed of, for example, a pair structure of at least one of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP. It may be, but is not limited to such. The well layer may be formed of a material having a band gap smaller than the band gap of the barrier layer.

A conductive clad layer (not shown) may be formed on or under the active layer. The conductive cladding layer may be formed of a semiconductor having a bandgap wider than the bandgap of the barrier layer of the active layer. For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, or superlattice structure. In addition, the conductive clad layer may be doped with n-type or p-type.

In addition, a second conductivity type semiconductor layer may be formed on the active layer. The second conductivity type semiconductor layer may be formed of a semiconductor compound, for example, a group III-V compound semiconductor doped with a second conductivity type dopant. The second conductive semiconductor layer, for example, semiconductor material having a compositional formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1) It may include. When the second conductive semiconductor layer is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba, but is not limited thereto.

Here, unlike the above, the first conductive semiconductor layer may include a p-type semiconductor layer and the second conductive semiconductor layer may include an n-type semiconductor layer. In addition, a third conductive semiconductor layer including an n-type or p-type semiconductor layer may be formed on the first conductive semiconductor layer. Accordingly, the above-described light emitting device may include at least one of np, pn, npn, and pnp junction structures. It may include any one.

The light emitting device 10 may be disposed on the bottom surface of the cavity and may be electrically connected to the first electrode layer 221 and the second electrode layer 222, respectively. In the present embodiment, the light emitting device 10 is electrically connected to the first electrode layer 221 by a conductive adhesive (not shown), and is electrically connected to the second electrode layer 222 by a wire 240.

The first electrode layer 221 and the second electrode layer 222 may be made of a conductive material, specifically, may be a metal or a conductive alloy, and more specifically, copper (Cu), aluminum (Al), silver (Ag), or the like. Can be made. The first electrode layer 221 and the second electrode layer 222 may be electrically separated from the package body 210 with the insulating layer 215 interposed therebetween, and as shown, the first electrode layer 221 and the second electrode layer. 222 may be electrically separated from the bottom surface of the package body 210 and the bottom surface of the cavity.

The first electrode layer 221 and the second electrode layer 222 may have a multilayer structure in addition to the illustrated single layer structure. The first electrode layer 221 and the second electrode layer 222 may be electrically or mechanically coupled to the substrate wiring when the illustrated light emitting device package is mounted on a circuit board or the like by a surface mount technology (SMT) process. have.

The thermal sensor 400 may be any one of a thermal conductor, a semiconductor junction measuring element, and a metal-semiconductor junction measuring element.

As described above, the thermal sensor 400 may be disposed on the protrusion of the package body 210 to measure the heat emitted from the light emitting device 10 or the temperature of the light emitting device package 200. ) May measure the amount of light at the location where the) is placed, or may be integrally formed in the growth process of the package body 210 made of a silicon wafer. The thermal sensor 400 may be disposed on the package body 200 with the insulating layer 215 interposed therebetween.

FIG. 5 is a detailed view of the thermal sensor of FIG. 3A.

The thermal sensor 400 may be integrally formed in the manufacturing process of the package body 210. Specifically, the thermal sensor 400 may be disposed on the package body 210 with an insulating layer 215 interposed therebetween. And an electrode pad 460 and a heat transfer part 440 disposed between the heat sensing part 420 and the electrode pad 460.

The thermal sensor 400 may have a size of 0.3 micrometer to 1 micrometer, and may be sufficiently disposed on the protrusion considering that the width of the protrusion of the package body 210 is about 1 millimeter.

The heat sensing unit 420 may include nickel (Ni) and have _a thickness t _a of 100 nanometers to 500 nanometers. If the thickness of the heat detection unit 420 is too thin, it may not be sufficient for heat detection, and if too thick, the manufacturing process and cost may increase. Since nickel has a different resistance value according to temperature, the heat sensing unit 420 may be formed, and nickel may be replaced with a material having a different resistance value according to temperature.

The electrode layer 460 may be made of a conductive material and may include, for example, aluminum (Al), and may have a thickness t _c of 100 nanometers to 500 nanometers. If the thickness of the electrode layer 460 is too thin, the current may not be properly applied to the heat sensing unit 420. If the electrode layer 460 is too thick, the manufacturing process and the cost may be increased or the light reflection effect may be large.

The heat transfer part 440 may include a material having high thermal conductivity, such as titanium (Ti), and may have a thickness t _b of 25 nanometers to 100 nanometers. If the thickness of the heat transfer part 440 is too thick, it is advantageous for heat transfer, but heat may be absorbed by itself to become a heat source. If too thin, the contact characteristics of the electrode layer 460 and the heat sensing unit 420 may be degraded.

When a voltage is applied to at least two points of the electrode layer 460 described above, the heat sensing unit 420 may sense the surrounding heat to measure the temperature of the light emitting device to the inside of the light emitting device package.

The above-described titanium and aluminum may be made of the same material as the light sensing unit and the electrode layer in the optical sensor described below, and are manufactured in the same process as the light sensor. Replacement is possible.

6A and 6B illustrate another embodiment of a light emitting device package.

This embodiment is different from the above embodiment in that the thermal sensor 400 is disposed on the bottom surface of the cavity rather than the protrusion, and the thermal sensor is formed by etching the cavity on a package body such as a silicon wafer. There is a difference in forming.

In the present embodiment, the thermal sensor is formed on the bottom surface of the cavity, which may be formed directly under the light emitting device. In addition, since the size of the thermal sensor may be about 1 micrometer, even if disposed on the molding of the light emitting device package, the light blocking effect may be very small and advantageous for heat detection.

In the light emitting device package according to the above-described embodiments, a thin film-shaped thermal sensor is easily formed integrally with the manufacturing process of the package body, which is advantageous for heat sensing of the light emitting device or the surroundings, and the detection result is controlled by the control circuit. By reflecting, the driving voltage or the current of the light emitting device can be adjusted.

7A and 7B illustrate another embodiment of a light emitting device package. FIGS. 8A and 8B illustrate the optical sensor of FIG. 7A in detail, and FIGS. 9A to 9D illustrate a manufacturing process of the optical sensor. to be.

The light emitting device package according to the present embodiment is different from the embodiment of FIG. 3A in that the optical sensor 300 is disposed on the protrusion, and the optical sensor 300 has the thermal sensor 400 with the light emitting device 10 interposed therebetween. ) Is positioned opposite to).

The optical sensor 300 may be any one of a photoconductor, a semiconductor junction measuring element, and a metal-semiconductor junction measuring element. The optical sensor 300 may include a photoconductor, a PN type photodiode, and a PIN. It may be at least one of a structured photodiode, an Avalanche photodiode (APD), or a metal semiconductor metal (MSM) structured photodiode.

As described above, the optical sensor 300 may be disposed on the protrusion of the package body 210 to measure the light amount or intensity of the light emitted from the light emitting device 10, and may be located at the place where the light emitting device package 200 is disposed. The amount of light may be measured or may be integrally formed in the growth process of the package body 210 made of a silicon wafer. The optical sensor 300 is disposed on the above-described protrusion, and part of the light sensor 300 may be exposed to the cavity to detect light emitted from the light emitting device 10.

The optical sensor 300 may be disposed on the package body 200 with an insulating layer 215 interposed therebetween, a part of which may be a cantilever shape that is fixed to the protrusion and part of which is exposed to the cavity, and the optical sensor 300 in the cavity. When a portion of) is exposed, the amount of light from the light emitting device 10 can be measured accurately.

The optical sensor 300 may be integrally formed with the package body, wherein the integrally formed sensor means that the optical sensor 300 is formed separately and is formed together in the manufacturing process of the package body without being bonded to the package body. The entire size of the optical sensor 300 may be 50 micrometers to 150 micrometers, but if the size is too small, it may not be sufficient for the arrangement of the line shape of the electrode layer, which will be described later, and if the size is too large, light sensing by light absorption Although advantageous, light absorption can be increased. Here, the size of the optical sensor 300 refers to the size of one side when the optical sensor 300 is a square.

The optical sensor 300 is bonded to the package body with an insulating layer interposed therebetween, the first insulating film 315, the optical sensor body 330, the second insulating film 335, the light sensing unit 340, and the electrode layer 360. It can be made, including).

The first insulating film 315 and the second insulating film 335 are disposed on the first and second surfaces of the optical sensor body 330 in different directions, and may be made of silicon nitride such as Si ₃ N ₄ , Other silicon oxides, such as SiO ₂ , or an insulating material such as aluminum nitride (AlN) or silicon carbide (SiC). The first insulating layer 315 and the second insulating layer 335 may be deposited to a thickness of 30 nanometers to 100 nanometers, and may be 60 nanometers thick. If the thickness t ₄ of the first insulating film 315 and the second insulating film 335 is too thin, the insulating effect may not be sufficient. If the thickness of the first insulating film 315 and the second insulating film 335 is too thin, the thickness may be increased or the light blocking effect may be sufficient.

The optical sensor body 330 may be made of a material having excellent light absorption, specifically, may be a semiconductor material, and a material having a high light absorption of a corresponding wavelength band may be used according to the wavelength band of light, and specifically, silicon ( silicon semiconductors such as silicon, poly-silicon, or amorphous silicon, and nitride semiconductors such as GaN.

The optical sensor body 330 may be 0.5 micrometers to 5 micrometers thick and 1 micrometer thick. If the thickness t ₃ of the optical sensor body 330 is too thin, light may not be absorbed sufficiently to be sufficient for the operation of the optical sensor 300. Light emitted in the direction in which the light sensor 300 is disposed may be reduced.

The light sensing unit 340 may be made of a material having excellent photosensitivity, and specifically, may include titanium (Ti). The light detecting unit 340 may detect light absorbed by the light sensor body 330 and transmit the light to the electrode layer 360, and may be electrically connected to the light sensor body 330 and the electrode layer 360, respectively. The light sensing unit 340 may have a thickness of 25 nanometers to 100 nanometers, and may be 50 nanometers thick. If the thickness of the light sensing unit 340 is too thin, it may not be sufficient for light sensing. If the thickness of the light sensing unit 340 is too thick, the material cost may increase or block the traveling light. Here, the thickness of the light sensing unit 340 may be the thickness t2 of the unpatterned portion or the entire thickness.

The electrode layer 360 may sense a current flowing in the optical sensor 300, may be made of a conductive material, and may be, in detail, a metal or a semiconductor material, and more specifically, may be aluminum (Al). The electrode layer 360 may have a thickness of 300 nanometers and may have a thickness of 100 nanometers to 500 nanometers. The electrode layer 360 is formed by a deposition process, and if it is too thin, even deposition is difficult, so it is sufficient to deposit a thickness of 100 nanometers, and if the thickness t ₁ of the electrode layer 360 is too thick, it reflects light propagated from the bottom. Since it is possible to deposit to a thickness of 500 nanometers, it is sufficient, and can be deposited with the first and second electrode layers 221 and 222 disposed on the package body, the same process as the electrode layer 460 in the thermal sensor 400 Can be prepared.

In FIG. 9D, the light sensing unit 340 or the second insulating layer 335 is patterned, so that the light sensing unit 340 is connected to the optical sensor body 330 in some regions so that a current is transmitted by the light. Can flow on.

When the electrode layer 360 is disposed in a plurality of line shapes facing each other as shown in FIGS. 8A to 8B, current applied to the light sensing unit 240 may be evenly transmitted to the electrode layer 360. In addition, the bonding pad may be disposed in contact with the electrode layer 360 at both ends, and an optical sensor may operate when a voltage is applied at both ends of the bonding pad.

In FIG. 8B, the active region 300a of the electrode layer 300 is illustrated in detail, where the active region 300a refers to a region in which current is transmitted from the photosensitive unit 340. In the active region 300a, the electrode layer is composed of a plurality of opposing lines Al ₁ , Al ₂ ,..., Al _{n- 1} , Al _n , and each of the lines Al ₁ , Al ₂ ,. , Al _{n -1} , Al _n ) may be connected to a plurality of connection parts (C ₁ , C ₂ , ... C _{n -1} , C _n ), and a plurality of connection parts (C ₁ , C ₂ , ... C _{n −1} , C _n may be alternately arranged at both ends of each of the lines Al ₁ , Al ₂ ,..., Al _{n −1} , Al _n .

As shown in FIG. 8A, the optical sensor 300 includes a first region in contact with the package body and a second region facing the bottom surface of the cavity, in which the electrode layer is disposed to emit light emitted from the light emitting device. Can be detected.

9A to 9D, the manufacturing process of the optical sensor is briefly shown.

In FIG. 9A, the package body 210 is grown on a p-type silicon wafer or the like, in FIG. 6B, an insulating layer 215 is deposited, and then a first insulating film 315 is deposited by LPCVD or the like method, and then the silicon wafer. It can act as a mask when etching back. Here, the etching of the silicon wafer may be the process of forming the cavity described above.

In FIG. 9C, the optical sensor body 330 may be extended on the first insulating layer 315 with polysilicon, and the second insulating layer 335 may serve as a passivation layer of the optical sensor body 330. In addition, in FIG. 9D, the light sensing unit 340 and the electrode layer 360 may be deposited and patterned.

In the above-described light emitting device package, a thin film-shaped optical sensor is simply formed integrally with the manufacturing process of the package body, and thus may be advantageous for light sensing of the light emitting device or the surroundings.

A plurality of light emitting device packages according to the embodiment may be arranged on a circuit board, and a light guide plate, a prism sheet, a diffusion sheet, and the like, which are optical members, may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the semiconductor semiconductor device or the light emitting device package described in the above embodiments, for example, the lighting system may include a lamp and a street lamp. . Hereinafter, a head lamp and a backlight unit will be described as an embodiment of the lighting system in which the above-described light emitting device package is disposed.

10 is a diagram illustrating an embodiment of a head lamp including a light emitting device package.

The head lamp 500 according to the embodiment is a light emitted from the light emitting device module 501 in which the light emitting device package is disposed is reflected by the reflector 502 and the shade 503 and then transmitted through the lens 504 to the front of the vehicle body. Can head.

As described above, the light emitting device package used in the light emitting device module 501 has a thin film-shaped heat sensor is easily formed integrally with the manufacturing process of the package body, it is advantageous to the heat detection of the light emitting device or the surroundings Can be.

11 is a diagram illustrating an embodiment of an image display apparatus including a light emitting device package.

As shown, the image display device 600 according to the present exemplary embodiment includes a light source module, a reflector 620 on the bottom cover 610, and light emitted from the light source module in front of the reflector 620. The light guide plate 640 for guiding the front of the image display device, the first prism sheet 650 and the second prism sheet 660 disposed in front of the light guide plate 640, and the second prism sheet 660. And a color filter 680 disposed in front of the panel 670 disposed in front of the panel 670.

The light source module includes a light emitting device package 635 on the circuit board 630. Here, the circuit board 630 may be a PCB, etc., the light emitting device package 635 is as described above.

The bottom cover 610 may receive components in the image display device 600. The reflective plate 620 may be provided as a separate component as shown in the figure, or may be provided in the form of a high reflectivity coating on the rear surface of the light guide plate 640 or the front surface of the bottom cover 610.

The reflective plate 620 may use a material having high reflectance and being extremely thin, and may use polyethylene terephthalate (PET).

The light guide plate 640 scatters the light emitted from the light emitting device package module so that the light is uniformly distributed over the entire screen of the liquid crystal display. Accordingly, the light guide plate 630 may be formed of a material having good refractive index and high transmittance, and may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), polyethylene (PE), or the like. In addition, when the light guide plate 640 is omitted, an air guide type display device may be implemented.

The first prism sheet 650 is formed of a translucent and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.

In the second prism sheet 660, the direction of the floor and the valley of one surface of the support film may be perpendicular to the direction of the floor and the valley of one surface of the support film in the first prism sheet 650. This is to evenly distribute the light transmitted from the light source module and the reflective sheet in all directions of the panel 570.

In the present embodiment, the first prism sheet 650 and the second prism sheet 660 form an optical sheet, and the optical sheet is composed of another combination, for example, a micro lens array or a diffusion sheet and a micro lens array. Or a combination of one prism sheet and a micro lens array.

The liquid crystal display panel (Liquid Crystal Display) may be disposed on the panel 670, and other types of display devices requiring a light source may be provided in addition to the liquid crystal display panel 660.

The panel 670 is in a state where the liquid crystal is located between the glass bodies and the polarizing plates are placed on both glass bodies in order to use the polarization of light. Here, the liquid crystal has an intermediate characteristic between the liquid and the solid, and the liquid crystal, which is an organic molecule having fluidity like a liquid, has a state in which the liquid crystal is regularly arranged like a crystal, and uses the property that the molecular arrangement is changed by an external electric field. Display an image.

The liquid crystal display panel used in the display device uses a transistor as an active matrix method as a switch for adjusting a voltage supplied to each pixel.

The front surface of the panel 670 is provided with a color filter 680 to transmit the light projected by the panel 670, only the red, green and blue light for each pixel can represent an image.

In the light emitting device package disposed in the image display device according to the present exemplary embodiment, a thin film-shaped thermal sensor may be easily formed integrally with the manufacturing process of the package body, and thus may be advantageous for light sensing of the light emitting device or the surroundings.

Although described above with reference to the embodiment is only an example and is not intended to limit the invention, those of ordinary skill in the art to which the present invention does not exemplify the above within the scope not departing from the essential characteristics of this embodiment It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

10: light emitting device 100, 200: light emitting device package
110. 210: package body 121, 122: first and second lead frame
130: conductive adhesive 140, 240: wire
150: molding 160: phosphor
215: insulating layer 221, 222: first and second electrode layer
300: light sensor 300a: active area
315 and 335: first and second insulating films 330: optical sensor body
340: light sensing unit 360, 460: electrode layer
400: heat sensor 420: heat detection unit
440: heat transfer unit

Claims (14)

A package body including a cavity in which at least a portion is recessed to open the top and a protrusion disposed outside the open area of the cavity;
And a first electrode layer and a second electrode layer electrically separated from the package body with an insulating layer interposed therebetween, wherein the first electrode layer and the second electrode layer are electrically separated from the bottom surface of the cavity, and the cavity is opened. A light emitting element disposed on the bottom surface of the cavity configured to emit light through the recessed area;
A thermal sensor positioned on at least a portion of the package body to measure a temperature of the light emitting device; And
Located on at least a portion of the package body includes an optical sensor for measuring the intensity of the light of the light emitting device,
The first electrode layer and the second electrode layer is disposed on the side of the cavity,
An upper surface of the first electrode layer and an upper surface of the second electrode layer are exposed on the side surface of the cavity,
The optical sensor is
An optical sensor body, a first insulating film and a second insulating film disposed on first and second surfaces of the optical sensor body, a third electrode layer, and an optical sensing unit electrically connecting the optical sensor body and the third electrode layer; ,
The third electrode layer includes a plurality of opposing lines, the plurality of opposing lines are connected to each other through a plurality of connecting portions, and the plurality of connecting portions are alternately arranged at both ends of each of the opposing lines. Become,
A first region in contact with the top surface of the package body and a second region facing the bottom surface of the cavity, the portion being fixed to the protrusion, the portion being a cantilever shape exposed to the cavity,
The thermal sensor is
A heat sensing unit, an electrode pad, and a heat transfer unit disposed between the heat sensing unit and the electrode pad,
The thermal sensor is positioned above one of the first and second electrode layers,
The light emitting device package is in contact with the package body and the insulating layer therebetween. delete delete According to claim 1,
The heat transfer part comprises titanium (Ti), the heat transfer part has a thickness of 25 nanometers to 100 nanometers,
The heat detection unit includes nickel (Ni), the heat detection unit has a thickness of 100 nanometers to 500 nanometers,
The third electrode layer includes aluminum (Al), the light emitting device package having a thickness of 100 nanometers to 500 nanometers. delete delete The method according to any one of claims 1 to 4,
The thermal sensor is a light emitting device package of the size of 0.3 micrometers to 1 micrometer. The method according to any one of claims 1 to 4,
The optical sensor is a light emitting device package formed integrally with the package body delete delete delete delete delete The method according to any one of claims 1 to 4,
In the second region of the optical sensor, the third electrode layer is disposed in a plurality of parallel line shape facing each other.

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