KR101977007B1 - 노광 장치, 노광 방법, 및 디바이스 제조 방법 - Google Patents

노광 장치, 노광 방법, 및 디바이스 제조 방법 Download PDF

Info

Publication number
KR101977007B1
KR101977007B1 KR1020187031589A KR20187031589A KR101977007B1 KR 101977007 B1 KR101977007 B1 KR 101977007B1 KR 1020187031589 A KR1020187031589 A KR 1020187031589A KR 20187031589 A KR20187031589 A KR 20187031589A KR 101977007 B1 KR101977007 B1 KR 101977007B1
Authority
KR
South Korea
Prior art keywords
heads
head
stage
region
different
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020187031589A
Other languages
English (en)
Korean (ko)
Other versions
KR20180121696A (ko
Inventor
유이치 시바자키
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20180121696A publication Critical patent/KR20180121696A/ko
Application granted granted Critical
Publication of KR101977007B1 publication Critical patent/KR101977007B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70975—Assembly, maintenance, transport or storage of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • H01L21/027—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49004—Electrical device making including measuring or testing of device or component part

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Optical Transform (AREA)
KR1020187031589A 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법 Active KR101977007B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23670109P 2009-08-25 2009-08-25
US61/236,701 2009-08-25
US12/859,983 2010-08-20
US12/859,983 US8493547B2 (en) 2009-08-25 2010-08-20 Exposure apparatus, exposure method, and device manufacturing method
PCT/JP2010/064663 WO2011024985A1 (en) 2009-08-25 2010-08-24 Exposure apparatus, exposure method, and device manufacturing method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020177018815A Division KR101917050B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법

Publications (2)

Publication Number Publication Date
KR20180121696A KR20180121696A (ko) 2018-11-07
KR101977007B1 true KR101977007B1 (ko) 2019-05-09

Family

ID=43625431

Family Applications (8)

Application Number Title Priority Date Filing Date
KR1020187031589A Active KR101977007B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법
KR1020157029938A Active KR101680546B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법
KR1020147018871A Active KR101539190B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법
KR1020167032579A Active KR101828592B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법
KR1020177018815A Active KR101917050B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법
KR1020157002010A Active KR101585837B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법
KR1020157001710A Active KR101606333B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법
KR1020127004055A Active KR101533142B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법

Family Applications After (7)

Application Number Title Priority Date Filing Date
KR1020157029938A Active KR101680546B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법
KR1020147018871A Active KR101539190B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법
KR1020167032579A Active KR101828592B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법
KR1020177018815A Active KR101917050B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법
KR1020157002010A Active KR101585837B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법
KR1020157001710A Active KR101606333B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법
KR1020127004055A Active KR101533142B1 (ko) 2009-08-25 2010-08-24 노광 장치, 노광 방법, 및 디바이스 제조 방법

Country Status (8)

Country Link
US (11) US8493547B2 (https=)
EP (5) EP3054354B1 (https=)
JP (9) JP5637495B2 (https=)
KR (8) KR101977007B1 (https=)
CN (4) CN104698772B (https=)
HK (2) HK1250795A1 (https=)
TW (7) TWI628518B (https=)
WO (1) WO2011024985A1 (https=)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8514395B2 (en) * 2009-08-25 2013-08-20 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
US8493547B2 (en) 2009-08-25 2013-07-23 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
NL2006699A (en) * 2010-06-03 2011-12-06 Asml Netherlands Bv Stage apparatus and lithographic apparatus comprising such stage apparatus.
JP5756267B2 (ja) * 2010-09-03 2015-07-29 オリンパス株式会社 エンコーダ用信号処理回路
NL2007818A (en) 2010-12-20 2012-06-21 Asml Netherlands Bv Method of updating calibration data and a device manufacturing method.
US9778579B2 (en) 2011-11-10 2017-10-03 Nikon Corporation System and method for controlling a temperature of a reaction assembly
US9207549B2 (en) 2011-12-29 2015-12-08 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method with encoder of higher reliability for position measurement
CN103246172B (zh) * 2012-02-10 2016-12-28 约翰内斯﹒海德汉博士有限公司 具有位置测量装置的多个扫描单元的装置
DE102012210309A1 (de) * 2012-06-19 2013-12-19 Dr. Johannes Heidenhain Gmbh Positionsmesseinrichtung
EP3723111B1 (en) * 2012-10-02 2021-09-08 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
EP3611572B1 (en) * 2013-06-28 2023-04-05 Nikon Corporation Mobile body apparatus, exposure apparatus, and device manufacturing method
JP6223091B2 (ja) * 2013-09-25 2017-11-01 株式会社Ｓｃｒｅｅｎホールディングス 位置計測装置、アライメント装置、パターン描画装置および位置計測方法
CN104865798B (zh) * 2014-02-21 2017-07-11 无锡华润上华科技有限公司 光刻工艺中的曝光场的尺寸选择方法
JP6488073B2 (ja) * 2014-02-28 2019-03-20 株式会社日立ハイテクノロジーズ ステージ装置およびそれを用いた荷電粒子線装置
WO2016008641A1 (en) * 2014-07-16 2016-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN107407894B (zh) 2014-12-24 2020-01-24 株式会社尼康 测量装置及测量方法、曝光装置及曝光方法、以及器件制造方法
HK1246871A1 (en) 2015-02-23 2018-09-14 Nikon Corporation Measurement device, lithography system and exposure device, and management method, superposition measurement method and device manufacturing method
KR102688211B1 (ko) 2015-02-23 2024-07-24 가부시키가이샤 니콘 계측 장치, 리소그래피 시스템 및 노광 장치, 그리고 디바이스 제조 방법
TWI840811B (zh) 2015-02-23 2024-05-01 日商尼康股份有限公司 基板處理系統及基板處理方法、以及元件製造方法
HK1243824A1 (zh) 2015-06-08 2018-07-20 株式会社尼康 带电粒子束曝光装置及器件制造方法
US10268121B2 (en) * 2015-09-30 2019-04-23 Nikon Corporation Exposure apparatus and exposure method, and flat panel display manufacturing method
KR102775256B1 (ko) * 2015-09-30 2025-02-28 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 플랫 패널 디스플레이 제조 방법
HK1248832A1 (zh) * 2015-09-30 2018-10-19 株式会社尼康 曝光装置、平面显示器的制造方法、组件制造方法、及曝光方法
WO2017057583A1 (ja) * 2015-09-30 2017-04-06 株式会社ニコン 露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、及び露光方法
WO2017057569A1 (ja) 2015-09-30 2017-04-06 株式会社ニコン 露光装置及び露光方法、並びにフラットパネルディスプレイ製造方法
JP6925783B2 (ja) * 2016-05-26 2021-08-25 株式会社アドテックエンジニアリング パターン描画装置及びパターン描画方法
KR20250119658A (ko) * 2016-08-24 2025-08-07 가부시키가이샤 니콘 계측 시스템 및 기판 처리 시스템, 그리고 디바이스 제조 방법
US10782619B2 (en) * 2016-09-30 2020-09-22 Nikon Corporation Movable body apparatus, moving method, exposure apparatus, exposure method, flat-panel display manufacturing method, and device manufacturing method
CN113433802B (zh) * 2016-09-30 2023-05-23 株式会社尼康 移动体装置、移动方法、曝光装置、曝光方法、平板显示器的制造方法、以及元件制造方法
CN113504712B (zh) * 2016-09-30 2023-09-19 株式会社尼康 曝光装置、平板显示器的制造方法、以及元件制造方法
KR102296327B1 (ko) 2016-09-30 2021-09-01 가부시키가이샤 니콘 이동체 장치, 이동 방법, 노광 장치, 노광 방법, 플랫 패널 디스플레이의 제조 방법, 그리고 디바이스 제조 방법
CN106773525B (zh) * 2017-03-01 2020-06-16 合肥京东方光电科技有限公司 掩模板、对位方法、显示面板、显示装置及其对盒方法
CN109856929B (zh) * 2017-11-30 2020-06-16 上海微电子装备（集团）股份有限公司 信号处理装置及处理方法、对准系统及对准方法和光刻机
WO2019201544A1 (en) 2018-04-20 2019-10-24 Asml Netherlands B.V. Pixel shape and section shape selection for large active area high speed detector
US10707175B2 (en) * 2018-05-22 2020-07-07 Globalfoundries Inc. Asymmetric overlay mark for overlay measurement
CN108802085B (zh) * 2018-06-15 2020-09-11 国网辽宁省电力有限公司电力科学研究院 一种电气支撑设备的状态评估方法
US11209373B2 (en) * 2019-06-21 2021-12-28 Kla Corporation Six degree of freedom workpiece stage
CN115335772A (zh) * 2020-03-23 2022-11-11 三荣技研股份有限公司 曝光装置及曝光方法
TWI756984B (zh) * 2020-12-14 2022-03-01 南亞科技股份有限公司 曝光機的操作方法
KR102801926B1 (ko) * 2021-12-31 2025-05-07 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
TWI814668B (zh) * 2021-12-31 2023-09-01 南韓商細美事有限公司 用於處理基板之設備及用於處理基板之方法
JP7840721B2 (ja) * 2022-02-22 2026-04-06 株式会社Ｓｃｒｅｅｎホールディングス 露光方法、および、露光装置
JP7805858B2 (ja) * 2022-05-13 2026-01-26 株式会社日立ハイテク ステージ装置、荷電粒子線装置及び真空装置
EP4372790A1 (de) * 2022-11-18 2024-05-22 Dr. Johannes Heidenhain GmbH Positioniereinrichtung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007219471A (ja) 2006-01-23 2007-08-30 Fujifilm Corp パターン形成方法

Family Cites Families (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
US5196745A (en) 1991-08-16 1993-03-23 Massachusetts Institute Of Technology Magnetic positioning device
KR100300618B1 (ko) 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JPH07270122A (ja) 1994-03-30 1995-10-20 Canon Inc 変位検出装置、該変位検出装置を備えた露光装置およびデバイスの製造方法
US5696413A (en) 1994-10-24 1997-12-09 Aqua Magnetics, Inc. Reciprocating electric generator
EP1944654A3 (en) 1996-11-28 2010-06-02 Nikon Corporation An exposure apparatus and an exposure method
WO1998028665A1 (en) 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
WO1999046835A1 (en) 1998-03-11 1999-09-16 Nikon Corporation Ultraviolet laser apparatus and exposure apparatus comprising the ultraviolet laser apparatus
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2000187338A (ja) * 1998-12-24 2000-07-04 Canon Inc 露光装置およびデバイス製造方法
US6924884B2 (en) * 1999-03-08 2005-08-02 Asml Netherlands B.V. Off-axis leveling in lithographic projection apparatus
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
EP1111472B1 (en) * 1999-12-22 2007-03-07 ASML Netherlands B.V. Lithographic apparatus with a position detection system
SG124257A1 (en) 2000-02-25 2006-08-30 Nikon Corp Exposure apparatus and exposure method capable of controlling illumination distribution
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
US7561270B2 (en) 2000-08-24 2009-07-14 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7289212B2 (en) 2000-08-24 2007-10-30 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufacturing thereby
TW527526B (en) 2000-08-24 2003-04-11 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
KR100815222B1 (ko) 2001-02-27 2008-03-19 에이에스엠엘 유에스, 인크. 리소그래피 장치 및 적어도 하나의 레티클 상에 형성된 적어도 두 개의 패턴으로부터의 이미지로 기판 스테이지 상의 필드를 노출시키는 방법
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
EP1571697A4 (en) 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND COMPONENT MANUFACTURING METHOD
US7025498B2 (en) 2003-05-30 2006-04-11 Asml Holding N.V. System and method of measuring thermal expansion
TWI295408B (en) 2003-10-22 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method, and measurement system
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US7102729B2 (en) 2004-02-03 2006-09-05 Asml Netherlands B.V. Lithographic apparatus, measurement system, and device manufacturing method
JP2006013090A (ja) * 2004-06-25 2006-01-12 Nikon Corp 露光装置及びデバイス製造方法
US7256871B2 (en) 2004-07-27 2007-08-14 Asml Netherlands B.V. Lithographic apparatus and method for calibrating the same
WO2006038952A2 (en) 2004-09-30 2006-04-13 Nikon Corporation Projection optical device and exposure apparatus
US20060139595A1 (en) 2004-12-27 2006-06-29 Asml Netherlands B.V. Lithographic apparatus and method for determining Z position errors/variations and substrate table flatness
US7161659B2 (en) 2005-04-08 2007-01-09 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US7515281B2 (en) * 2005-04-08 2009-04-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7405811B2 (en) 2005-04-20 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and positioning apparatus
US7349069B2 (en) 2005-04-20 2008-03-25 Asml Netherlands B.V. Lithographic apparatus and positioning apparatus
KR20070121834A (ko) * 2005-04-21 2007-12-27 후지필름 가부시키가이샤 묘화 방법 및 그 장치
US7348574B2 (en) * 2005-09-02 2008-03-25 Asml Netherlands, B.V. Position measurement system and lithographic apparatus
US7362446B2 (en) 2005-09-15 2008-04-22 Asml Netherlands B.V. Position measurement unit, measurement system and lithographic apparatus comprising such position measurement unit
US7978339B2 (en) 2005-10-04 2011-07-12 Asml Netherlands B.V. Lithographic apparatus temperature compensation
US7656501B2 (en) * 2005-11-16 2010-02-02 Asml Netherlands B.V. Lithographic apparatus
TWI605491B (zh) * 2006-01-19 2017-11-11 尼康股份有限公司 曝光裝置及曝光方法、以及元件製造方法
KR101356270B1 (ko) 2006-02-21 2014-01-28 가부시키가이샤 니콘 패턴 형성 장치, 마크 검출 장치, 노광 장치, 패턴 형성 방법, 노광 방법 및 디바이스 제조 방법
EP3327507B1 (en) * 2006-02-21 2019-04-03 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US7602489B2 (en) * 2006-02-22 2009-10-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7253875B1 (en) * 2006-03-03 2007-08-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7636165B2 (en) * 2006-03-21 2009-12-22 Asml Netherlands B.V. Displacement measurement systems lithographic apparatus and device manufacturing method
TWI454859B (zh) * 2006-03-30 2014-10-01 尼康股份有限公司 移動體裝置、曝光裝置與曝光方法以及元件製造方法
US7483120B2 (en) * 2006-05-09 2009-01-27 Asml Netherlands B.V. Displacement measurement system, lithographic apparatus, displacement measurement method and device manufacturing method
US20070281149A1 (en) 2006-06-06 2007-12-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI416269B (zh) 2006-08-31 2013-11-21 尼康股份有限公司 Mobile body driving method and moving body driving system, pattern forming method and apparatus, exposure method and apparatus, and component manufacturing method
TWI622084B (zh) * 2006-09-01 2018-04-21 尼康股份有限公司 Mobile body driving method, moving body driving system, pattern forming method and device, exposure method and device, component manufacturing method, and correction method
KR101452524B1 (ko) * 2006-09-01 2014-10-21 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
US7619207B2 (en) 2006-11-08 2009-11-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7561280B2 (en) 2007-03-15 2009-07-14 Agilent Technologies, Inc. Displacement measurement sensor head and system having measurement sub-beams comprising zeroth order and first order diffraction components
US7903866B2 (en) 2007-03-29 2011-03-08 Asml Netherlands B.V. Measurement system, lithographic apparatus and method for measuring a position dependent signal of a movable object
US7710540B2 (en) 2007-04-05 2010-05-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8174671B2 (en) * 2007-06-21 2012-05-08 Asml Netherlands B.V. Lithographic projection apparatus and method for controlling a support structure
EP2818927B1 (en) * 2007-07-18 2016-04-27 Nikon Corporation Measurement method, stage apparatus, and exposure apparatus
KR101409149B1 (ko) * 2007-07-24 2014-06-17 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
US8194232B2 (en) * 2007-07-24 2012-06-05 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, position control method and position control system, and device manufacturing method
US8547527B2 (en) * 2007-07-24 2013-10-01 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and pattern formation apparatus, and device manufacturing method
KR20100057758A (ko) * 2007-08-24 2010-06-01 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 그리고 패턴 형성 방법 및 패턴 형성 장치
US8237919B2 (en) * 2007-08-24 2012-08-07 Nikon Corporation Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, and device manufacturing method for continuous position measurement of movable body before and after switching between sensor heads
NL1035987A1 (nl) * 2007-10-02 2009-04-03 Asml Netherlands Bv Method for positioning an object by an electromagnetic motor, stage apparatus and lithographic apparatus.
US8665455B2 (en) 2007-11-08 2014-03-04 Nikon Corporation Movable body apparatus, pattern formation apparatus and exposure apparatus, and device manufacturing method
NL1036180A1 (nl) * 2007-11-20 2009-05-25 Asml Netherlands Bv Stage system, lithographic apparatus including such stage system, and correction method.
US8711327B2 (en) * 2007-12-14 2014-04-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8115906B2 (en) * 2007-12-14 2012-02-14 Nikon Corporation Movable body system, pattern formation apparatus, exposure apparatus and measurement device, and device manufacturing method
SG183057A1 (en) * 2007-12-17 2012-08-30 Nikon Corp Exposure apparatus, exposure method and device manufacturing method
CN101681809B (zh) * 2007-12-28 2012-04-25 株式会社尼康 曝光装置、曝光方法以及器件制造方法
US8237916B2 (en) * 2007-12-28 2012-08-07 Nikon Corporation Movable body drive system, pattern formation apparatus, exposure apparatus and exposure method, and device manufacturing method
NL1036742A1 (nl) * 2008-04-18 2009-10-20 Asml Netherlands Bv Stage system calibration method, stage system and lithographic apparatus comprising such stage system.
US8786829B2 (en) * 2008-05-13 2014-07-22 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8817236B2 (en) 2008-05-13 2014-08-26 Nikon Corporation Movable body system, movable body drive method, pattern formation apparatus, pattern formation method, exposure apparatus, exposure method, and device manufacturing method
US8334983B2 (en) * 2009-05-22 2012-12-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8493547B2 (en) 2009-08-25 2013-07-23 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US8514395B2 (en) * 2009-08-25 2013-08-20 Nikon Corporation Exposure method, exposure apparatus, and device manufacturing method
JP2014045897A (ja) * 2012-08-30 2014-03-17 Hds:Kk ボード玩具
EP3723111B1 (en) 2012-10-02 2021-09-08 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007219471A (ja) 2006-01-23 2007-08-30 Fujifilm Corp パターン形成方法

Also Published As

Publication number Publication date
JP2019197229A (ja) 2019-11-14
US9715176B2 (en) 2017-07-25
HK1222714A1 (en) 2017-07-07
JP6948581B2 (ja) 2021-10-13
US9291917B2 (en) 2016-03-22
JP6107980B2 (ja) 2017-04-05
HK1250795A1 (en) 2019-01-11
CN104698772B (zh) 2017-08-29
KR101606333B1 (ko) 2016-03-24
TW201115283A (en) 2011-05-01
US20170285485A1 (en) 2017-10-05
EP3352016A1 (en) 2018-07-25
JP6035691B2 (ja) 2016-11-30
JP6035686B2 (ja) 2016-11-30
TW201730691A (zh) 2017-09-01
JP2014150264A (ja) 2014-08-21
US9244367B2 (en) 2016-01-26
EP3054353B1 (en) 2018-04-18
KR20160137672A (ko) 2016-11-30
KR20170083646A (ko) 2017-07-18
KR20150024923A (ko) 2015-03-09
HK1222715A1 (en) 2017-07-07
HK1171088A1 (zh) 2013-03-15
CN104238283A (zh) 2014-12-24
JP2011049557A (ja) 2011-03-10
US10191383B2 (en) 2019-01-29
TWI559095B (zh) 2016-11-21
TW201447508A (zh) 2014-12-16
CN102549501A (zh) 2012-07-04
US20160161866A1 (en) 2016-06-09
KR101828592B1 (ko) 2018-02-13
US20140340667A1 (en) 2014-11-20
EP2808737B1 (en) 2016-09-21
EP3054354B1 (en) 2018-03-21
EP2470962A1 (en) 2012-07-04
US20190107782A1 (en) 2019-04-11
US9019472B2 (en) 2015-04-28
CN104678718A (zh) 2015-06-03
JP2017045063A (ja) 2017-03-02
KR20120062716A (ko) 2012-06-14
KR20150029716A (ko) 2015-03-18
HK1206437A1 (en) 2016-01-08
JP2016128911A (ja) 2016-07-14
JP6035694B2 (ja) 2016-11-30
TW201539155A (zh) 2015-10-16
JP2018077536A (ja) 2018-05-17
US20180164692A1 (en) 2018-06-14
TWI628518B (zh) 2018-07-01
EP2470962B1 (en) 2016-08-03
US9389517B2 (en) 2016-07-12
CN102549501B (zh) 2015-04-08
US20130329206A1 (en) 2013-12-12
US8493547B2 (en) 2013-07-23
JP2015109458A (ja) 2015-06-11
TWI497224B (zh) 2015-08-21
US9910361B2 (en) 2018-03-06
TWI649644B (zh) 2019-02-01
KR20180121696A (ko) 2018-11-07
US20150192863A1 (en) 2015-07-09
US20160097980A1 (en) 2016-04-07
TWI689793B (zh) 2020-04-01
JP5637495B2 (ja) 2014-12-10
EP3054353A1 (en) 2016-08-10
US20150192862A1 (en) 2015-07-09
US9081305B2 (en) 2015-07-14
US20160291484A1 (en) 2016-10-06
KR101680546B1 (ko) 2016-11-29
TWI574120B (zh) 2017-03-11
WO2011024985A1 (en) 2011-03-03
HK1205280A1 (en) 2015-12-11
US20110053061A1 (en) 2011-03-03
KR20140103313A (ko) 2014-08-26
TW201643563A (zh) 2016-12-16
KR20150122265A (ko) 2015-10-30
TW201823876A (zh) 2018-07-01
TWI599857B (zh) 2017-09-21
JP6566389B2 (ja) 2019-08-28
CN104238283B (zh) 2017-04-12
US10401733B2 (en) 2019-09-03
HK1200543A1 (en) 2015-08-07
EP2808737A1 (en) 2014-12-03
EP3352016B1 (en) 2019-07-03
JP6788812B2 (ja) 2020-11-25
KR101917050B1 (ko) 2018-11-08
JP2021012387A (ja) 2021-02-04
TW201921164A (zh) 2019-06-01
EP3054354A1 (en) 2016-08-10
US9507267B2 (en) 2016-11-29
KR101533142B1 (ko) 2015-07-09
CN104698772A (zh) 2015-06-10
HK1206436A1 (en) 2016-01-08
KR101585837B1 (ko) 2016-01-15
JP6292547B2 (ja) 2018-03-14
JP2015207013A (ja) 2015-11-19
KR101539190B1 (ko) 2015-07-27

Similar Documents

Publication Publication Date Title
KR101977007B1 (ko) 노광 장치, 노광 방법, 및 디바이스 제조 방법
HK1222715B (en) Exposure apparatus, exposure method, and device manufacturing method
HK1200543B (en) Exposure apparatus, exposure method, and device manufacturing method
HK1222714B (en) Exposure apparatus, exposure method, and device manufacturing method
HK1171088B (en) Exposure apparatus, exposure method, and device manufacturing method

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 8