KR101939839B1 - Semiconductor package - Google Patents

Abstract

A problem to be solved by the present invention is to provide a semiconductor package capable of suppressing package warp even if the circuit board is thin.
The present invention has been accomplished by using a specific thin film layer and a specific sealing layer.

Description

[0001] SEMICONDUCTOR PACKAGE [0002]

The present invention relates to a semiconductor package.

In the method of manufacturing a semiconductor package, Patent Document 1 discloses a method of reducing the damage of a semiconductor chip by performing a thermocompression bonding process concisely. However, this method is not sufficient for miniaturization and thinning of a semiconductor package. A method of suppressing package warpage of a semiconductor package is disclosed in Patent Document 2, but a complicated operation such as transfer molding is required.

Patent Document 1: JP-A-2009-267344 Patent Document 2: JP-A-2002-348352

A problem to be solved by the present invention is to provide a semiconductor package capable of suppressing package warp even if the circuit board is thin.

Means for Solving the Problems As a result of intensive studies to solve the above problems, the present inventors have completed the present invention by using a specific thin film layer and a specific sealing layer.

That is, the present invention includes the following contents.

[1] (Layer A) A thin film layer having an elastic modulus of 5 GPa or more and 25 GPa or less,

(B layer) a sealing layer having an elastic modulus of 0.1 GPa or more and 1 GPa or less,

(C layer) circuit substrate layer

Respectively,

The thickness of the A layer is 1 to 200 mu m, the thickness of the B layer is 100 to 600 mu m, the thickness of the C layer is 1 to 100 mu m,

Wherein a package warpage is 235 占 퐉 or less.

[2] The semiconductor package according to the above [1], wherein the thickness of the A layer is in the range of 0.05 to 3 when the thickness of the C layer is 1.

[3] The semiconductor package according to the above [1] or [2], wherein the thickness of the C layer is 1 and the thickness of the B layer is in the range of 0.05 to 10.

[4] The method of manufacturing a semiconductor device according to any one of [1] to [4], wherein the thickness of the A layer is 10 to 150 탆, the thickness of the B layer is 100 to 500 탆, the thickness of the C layer is 50 to 100 탆, and the package warpage is 0.1 to 200 탆 The semiconductor package according to any one of [1] to [3] above, further comprising:

[5] The semiconductor package according to any one of [1] to [4], wherein the thickness of the layer A is 20 to 70 탆.

[6] The semiconductor package according to any one of [1] to [5], wherein the package warp after the reflow treatment is 360 탆 or less.

[7] The semiconductor package according to any one of [1] to [6], wherein the package warp after the reflow treatment is 0.1 to 250 탆.

[8] The production process according to any one of [1] to [7], wherein a resin layer for a sealing layer is directly applied on the C layer and dried to form a B layer.

[9] The production process according to any one of [1] to [7], wherein the adhesive layer for a sealing layer is laminated on the C layer to form a B layer.

[10] The production method according to any one of [1] to [7] above, wherein the resin layer for thin film layer is coated on the layer B and dried to form the layer A.

[11] The production method according to any one of [1] to [7], wherein the A-layer is formed by laminating the adhesive sheet for a thin-film layer on the B-layer.

[12] The production process according to any one of [1] to [7] above, wherein the layer A is formed by laminating a cured sheet for a thin film layer on the layer B.

[13] A process for producing a semiconductor package according to any one of [1] to [7], which comprises the following steps 1) to 4).

Step 1) A step of applying a resin varnish to a support and drying to prepare an adhesive sheet for a thin-film layer, or a step of impregnating a resinous varnish into a sheet-like fibrous base material and drying to prepare an adhesive sheet for a thin-

Step 2) A step of applying a resin varnish to a support and drying to produce an adhesive sheet for a sealing layer

Step 3) A step of laminating an adhesive sheet for a thin-film layer and an adhesive layer for a sealing layer to remove the support of the adhesive sheet for a sealing layer to produce a double-

Step 4) Step of laminating the resin composition layer surface for the sealing layer of the double-layered adhesive sheet on the C layer

[14] A process for producing a semiconductor package according to any one of [1] to [7], which comprises the following steps 1) to 4).

Step 1) A step of applying a resin varnish to a support, followed by drying and thermosetting to produce a cured sheet for a thin film layer, or a step of impregnating a resinous varnish into a sheet-like fiber substrate, drying, ≪ / RTI >

Step 2) A step of applying a resin varnish to a support and drying to produce an adhesive sheet for a sealing layer

Step 3) A step of laminating a cured product sheet for a thin-film layer and an adhesive sheet for a sealing layer, and removing the support of the adhesive sheet for a sealing layer to produce a partially cured two-

Step 4) Step of laminating the resin composition layer surface for the sealing layer of the partially cured two-layer adhesive sheet on the C layer

By using a specific thin film layer and a specific sealing layer, it is possible to provide a semiconductor package that can suppress package warp even if the circuit substrate is thin.

1 is a schematic sectional view of a semiconductor package of this embodiment.

According to the present invention,

(A layer) A thin film layer having an elastic modulus of 5 GPa or more and 25 GPa or less,

(B layer) a sealing layer having an elastic modulus of 0.1 GPa or more and 1 GPa or less,

(C layer) circuit substrate layer

Respectively,

The thickness of the A layer is 1 to 200 mu m, the thickness of the B layer is 100 to 600 mu m, the thickness of the C layer is 1 to 100 mu m,

And the package warpage is 235 占 퐉 or less.

≪ (Layer A) Thin film layer having an elastic modulus of 5 GPa or more and 25 GPa or less >

The A layer of the present invention is characterized by having a modulus of elasticity of not less than 5 GPa and not more than 25 GPa to reduce warpage. And the A layer means the insulating layer after the heat curing process. The A layer can be obtained by using a thermosetting resin composition. (A) an epoxy resin, (b) an epoxy resin, (c) an inorganic filler, and (c) an inorganic filler. The thermosetting resin composition may contain Or more. In addition, a curing accelerator, a thermoplastic resin, rubber particles, a flame retardant, and other components can be appropriately blended.

[(a) Epoxy resin]

Examples of the epoxy resin include, but are not limited to, bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, bisphenol AF epoxy resin, phenol novolac epoxy resin, tert- A cresol novolak type epoxy resin, a biphenyl type epoxy resin, a linear aliphatic epoxy resin, an epoxy resin having a butadiene structure, an alicyclic epoxy resin, an alicyclic epoxy resin, an alicyclic epoxy resin, Containing epoxy resin, cyclohexane dimethanol-type epoxy resin, trimethylol-type epoxy resin, halogenated epoxy resin, and the like can be given. These may be used singly or in combination of two or more.

Among them, bisphenol A type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, biphenyl type epoxy resin, naphthylene ether type epoxy resin and epoxy resin having a butadiene structure are preferable from the viewpoint of heat resistance improvement, insulation reliability improvement, Resins are preferred. Specific examples of the epoxy resin include bisphenol A epoxy resin (Epikote 828 EL, YL980 manufactured by Mitsubishi Chemical Corporation), bisphenol F epoxy resin ("jER806H", "YL983U" manufactured by Mitsubishi Chemical Co., ), Naphthalene type bifunctional epoxy resin (HP4032, HP4032D and HP4032SS manufactured by DIC Corporation), naphthalene type tetrafunctional epoxy resin (HP4700 and HP4710 manufactured by DIC Corporation), naphthol Epoxy resin having a butadiene structure ("PB-3600" manufactured by Daicel Chemical Industries, Ltd.), epoxy resin having a biphenyl structure (Nippon Kogyo Co., NC3000L "," NC3100 "," YX4000 "," YX4000H "," YX4000HK "and" YL6121 "manufactured by Mitsubishi Chemical Corporation), anthracene epoxy resin (available from Mitsubishi Chemical Corporation EXA-7311 ", " EXA-7311L ", " EXA7311-G3 ", manufactured by DIC Corporation) ), There may be mentioned phosphorus-containing epoxy resin (sinnit tejjeu Chemical (Co., Ltd.) "FX289", "FX305", "TX0712", manufactured by Mitsubishi Chemical (Co., Ltd.) "YL7613"), and the like.

The epoxy resin may be used in combination of two or more kinds, but preferably contains an epoxy resin having two or more epoxy groups in one molecule. An epoxy resin which is a liquid aromatic epoxy resin having two or more epoxy groups in a molecule at a temperature of 20 캜 and an epoxy resin having three or more epoxy groups in one molecule and contains a solid aromatic epoxy resin at a temperature of 20 캜 The mode is more preferable. The term "aromatic epoxy resin" in the present invention means an epoxy resin having an aromatic ring structure in its molecule. When a liquid epoxy resin and a solid epoxy resin are used in combination as the epoxy resin, a point having appropriate flexibility when the resin composition is used in the form of an adhesive film or a cured product of the resin composition has an appropriate breaking strength, (Liquid epoxy resin: solid epoxy resin) is preferably in the range of 1: 0.1 to 2, more preferably in the range of 1: 0.3 to 1.8, and further preferably in the range of 1: 0.6 to 1.5.

In the thermosetting resin composition used in the present invention, when the nonvolatile component in the resin composition is 100% by mass, the content of the epoxy resin is preferably 3 to 40% by mass in view of improving the mechanical strength and water resistance of the cured product of the resin composition, , More preferably from 5 to 35 mass%, further preferably from 10 to 30 mass%.

[(b) Curing agent]

Examples of the curing agent (b) include, but are not limited to, a phenolic curing agent, a naphthol curing agent, an active ester curing agent, a benzoxazine curing agent, a cyanate ester curing agent and an acid anhydride curing agent, , A naphthol-based curing agent, and an active ester-based curing agent. These may be used singly or in combination of two or more.

Examples of the phenol-based curing agent and naphthol-based curing agent include, but are not limited to, phenol-based curing agents having a novolac structure and naphthol-based curing agents having a novolac structure, and phenol novolac resins, phenazine novolac resins containing a triazine skeleton, Naphthol novolak resin, naphthol aralkyl type resin, triazine skeleton-containing naphthol resin and biphenyl aralkyl type phenol resin are preferable. Examples of commercially available products include biphenyl aralkyl phenol resins such as "MEH-7700", "MEH-7810", "MEH-7851", "MEH7851-4H" (manufactured by Meiwa Kasei Co., SN170 "," SN180 "," SN190 "," SN190 ", and" SN190 "as naphthol aralkyl type resins are used as the naphthol novolac resin," NHN "," CBN "(manufactured by Nippon Kayaku Co., SN375 "(manufactured by Shinnittetsu Chemical Co., Ltd.)," TD2090 "(manufactured by DIC Corporation) as phenol novolak resin, phenol skeleton-containing phenol , Novolak resins " LA3018 ", " LA7052 ", " LA7054 ", and " LA1356 " (manufactured by DIC Corporation). These may be used singly or in combination of two or more.

The active ester-based curing agent is not particularly limited, but generally, an ester group having high reactivity such as esters of phenol esters, thiophenol esters, N-hydroxyamine esters, and heterocyclic hydroxy compounds is used in an amount of 2 Is preferably used. The active ester curing agent is preferably obtained by a condensation reaction of a carboxylic acid compound and / or a thiocarboxylic acid compound with a hydroxy compound and / or a thiol compound. From the viewpoint of heat resistance improvement, an active ester type curing agent obtained from a carboxylic acid compound and a hydroxy compound is preferable, and an active ester type curing agent obtained from a carboxylic acid compound and a phenol compound and / or a naphthol compound is more preferable. Examples of the carboxylic acid compound include benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, phthalic acid, isophthalic acid, terephthalic acid and pyromellitic acid. Examples of the phenol compound or the naphthol compound include hydroquinone, resorcin, bisphenol A, bisphenol F, bisphenol S, phenolphthalein, methylated bisphenol A, methylated bisphenol F, methylated bisphenol S, phenol, o-cresol, , Catechol,? -Naphthol,? -Naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone , Tetrahydroxybenzophenone, fluoroglucine, benzenetriol, dicyclopentadienyldiphenol, phenol novolak, and the like. One kind or two or more kinds of active ester type curing agents may be used. As the active ester-based curing agent, an active ester-based curing agent disclosed in Japanese Unexamined Patent Publication (Kokai) No. 2004-277460 may be used, or a commercially available one may be used. Examples of commercially available active ester-based curing agents include those containing a dicyclopentadienyldiphenol structure, acetylated phenol novolacs and benzoylated phenol novolacs, among which the dicyclopentadienyldiphenol structure . Specifically, EXB9451, EXB9460, EXB9460S-65T and HPC-8000-65T (manufactured by DIC Corporation, with an active equivalent of about 223) containing dicyclopentadienyldiphenol structure and DC808 YLH1026 (manufactured by Mitsubishi Chemical Corporation, with an activating group equivalent of about 200), YLH1030 (manufactured by Mitsubishi Chemical Corporation, active-group equivalent about 149), phenol novolac benzoylate 201), and YLH1048 (manufactured by Mitsubishi Chemical Corporation, having an active group equivalent of about 245). Of these, EXB9460S is preferable from the viewpoints of storage stability of the varnish and thermal expansion coefficient of the cured product.

As the active ester-based curing agent containing a dicyclopentadienyldiphenol structure, more specifically, those represented by the following formula (2).

(Wherein R represents a phenyl group or a naphthyl group, k represents 0 or 1, and n represents an average of the repeating unit of 0.05 to 2.5).

From the viewpoint of improving heat resistance, R is preferably a naphthyl group, k is preferably 0, and n is preferably 0.25 to 1.5.

Examples of the benzoxazine-based curing agent include, but are not particularly limited to, F-a, P-d (manufactured by Shikoku Chemicals) and HFB2006M (manufactured by Showa Kobunshi Co., Ltd.).

Examples of the cyanate ester curing agent include, but are not limited to, cyanate ester curing agents such as novolac type (phenol novolac type, alkylphenol novolak type and the like), dicyclopentadiene type cyanate ester type curing agents, bisphenol type Bisphenol F, bisphenol S and the like) cyanate ester curing agents, and prepolymers obtained by partially trimerizing them. The weight average molecular weight of the cyanate ester curing agent is not particularly limited, but is preferably 500 to 4500, more preferably 600 to 3000. Specific examples of the cyanate ester curing agent include bisphenol A dicyanate, polyphenol cyanate (oligo (3-methylene-1,5-phenylene cyanate), 4,4'- Dimethylphenyl cyanate), 4,4'-ethylidenediphenyl dicyanate, hexafluorobisphenol A dicyanate, 2,2-bis (4-cyanate) phenylpropane, 1,1- Cyanate phenylmethane), bis (4-cyanate-3,5-dimethylphenyl) methane, 1,3-bis Bifunctional cyanate resins such as phenol novolak, cresol novolac, and dicyclopentadiene structure-containing phenolic resins, and the like; polyfunctional cyanate resins derived from these And a prepolymer obtained by partially halogenating a cyanate resin. These may be used singly or in combination of two or more kinds As the commercially available cyanate ester resin, a phenol novolac type polyfunctional cyanate ester resin (PT30, cyanate equivalent 124, manufactured by RONDER Japan Co., Ltd.) represented by the following formula (2) (BA 230, cyanate equivalent 232, manufactured by Rurdar Japan Co., Ltd.) in which some or all of the bisphenol A dicyanate to be displayed is triarized to be a trimer, a dicyclopentadiene structure-containing cyanide represented by the following formula (4) Nate ester resin (DT-4000, DT-7000, manufactured by RONDER Japan Co., Ltd.) and the like.

Wherein n represents an arbitrary number (preferably 0 to 20) as an average value.

(Wherein n represents an average value of 0 to 5).

Examples of the acid anhydride-based curing agent include, but are not limited to, phthalic anhydride, tetrahydrophthalic anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylnadic anhydride, (2,5-dioxotetrahydro-3-furanyl) -3-methyl-3-cyclohexene-1,2-dicarboxylic acid anhydride, anhydrous trimellitic anhydride Examples of the anion selected from the group consisting of acetic anhydride, acetic anhydride, pyromellitic anhydride, benzophenonetetracarboxylic acid dianhydride, biphenyltetracarboxylic dianhydride, naphthalenetetracarboxylic dianhydride, oxydiphthalic acid dianhydride, 3,3'-4,4'- Carboxylic acid dianhydride, 1,3,3a, 4,5,9b-hexahydro-5- (tetrahydro-2,5-dioxo-3-furanyl) -naphtho [ 1,3-dione, ethylene glycol bis (anhydrotrimellitate), styrene-maleic acid copolymer Butylene, and the like of the polymer-type acid anhydrides such as maleic acid resin.

From the viewpoint of improving the mechanical strength and water resistance of the cured product of the resin composition in the resin composition used in the present invention, the ratio of (a) the total number of epoxy groups in the epoxy resin and (b) 1: 0.2 to 2, more preferably 1: 0.3 to 1.5, further preferably 1: 0.4 to 1. The total number of epoxy groups in the epoxy resin present in the resin composition is a value obtained by dividing the value obtained by dividing the solid content of each epoxy resin by the epoxy equivalent in terms of all epoxy resins and the total number of reactors of the curing agent means that the solid content The value obtained by dividing the mass by the equivalent of the reactor is the sum of all the curing agents.

[(c) inorganic filler]

The inorganic filler (c) is not particularly limited, and examples thereof include silica, alumina, barium sulfate, talc, clay, mica powder, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, aluminum borate, Barium, strontium titanate, calcium titanate, magnesium titanate, bismuth titanate, titanium oxide, barium zirconate, and calcium zirconate. Among them, silica is preferable. Further, silica such as amorphous silica, pulverized silica, fused silica, crystalline silica, synthetic silica and hollow silica is preferable, and fused silica is more preferable. The silica is preferably spherical. These may be used singly or in combination of two or more.

The average particle diameter of the inorganic filler is not particularly limited, but the upper limit of the average particle diameter of the inorganic filler is preferably such that, in the case of a semiconductor package having a narrow wire interval, the particles of the inorganic filler come in contact with the wire, It is preferably 20 占 퐉 or less, more preferably 10 占 퐉 or less, and further preferably 5 占 퐉 or less. On the other hand, when the epoxy resin composition is used as the resin composition varnish, the lower limit of the average particle diameter of the inorganic filler is preferably not less than 0.01 mu m and not more than 0.03 More preferably at least 0.05 mu m, even more preferably at least 0.07 mu m, and particularly preferably at least 0.1 mu m. The average particle diameter of the inorganic filler can be measured by a laser diffraction / scattering method based on the Mie scattering theory. Specifically, the particle size distribution of the inorganic filler can be measured with a laser diffraction scattering type particle size distribution measuring apparatus, and the median diameter is determined as the average particle diameter. The measurement sample can be preferably those in which an inorganic filler is dispersed in water by ultrasonic waves. As the laser diffraction scattering type particle size distribution measuring apparatus, LA-500, 750, 950, etc. manufactured by Horiba Seisakusho Co., Ltd. can be used.

When the inorganic filler is blended, the content of the non-volatile component in the resin composition is preferably 20 to 85% by mass, more preferably 30 to 80% by mass, , More preferably from 40 to 75 mass%, still more preferably from 50 to 70 mass%. If the content of the inorganic filler is too small, the coefficient of thermal expansion of the cured product tends to be high. If the content is too large, the cured product tends to become weak.

The inorganic filler may be incorporated with an epoxy silane coupling agent, an aminosilane coupling agent, a mercaptosilane coupling agent, a silane coupling agent, an organosilazane compound, a titanate coupling agent, and the like within the range of not impairing the effect of the present invention Of the surface treatment agent can be used. These may be used singly or in combination of two or more. Specific examples of the surface treatment agent include aminopropylmethoxysilane, aminopropyltriethoxysilane, ureidepropyltriethoxysilane, N-phenyl-3-aminopropyltrimethoxysilane, N-2 (aminoethyl) aminopropyltri Aminosilane coupling agents such as methoxysilane, glycidoxypropyltrimethoxysilane, glycidoxypropyltriethoxysilane, glycidoxypropylmethyldiethoxysilane, glycidylbutyltrimethoxysilane, (3, 4-epoxycyclohexyl) ethyltrimethoxysilane, mercaptosilane coupling agents such as mercaptopropyltrimethoxysilane and mercaptopropyltriethoxysilane, and coupling agents such as methyltrimethoxysilane, octadecyl Silane-based coupling agents such as trimethoxysilane, phenyltrimethoxysilane, methacryloxypropyltrimethoxysilane, imidazolylsilane and triazinylsilane, hexamethyldisilazane, hexaphenyldisilazane, trisilazane, Organosilazane compounds such as chlorotrisilazane and 1,1,3,3,5,5-hexamethylcyclotrisilazane, butyl titanate dimers, titanium octylen glycolate, diisopropoxytitanium bis (triethanol Aminate), dihydroxy titanium bis lactate, dihydroxy bis (ammonium lactate) titanium, bis (dioctyl pyrophosphate) ethylene titanate, bis (dioctyl pyrophosphate) oxyacetate titanate, tri- (Octadecylphosphite) titanate, tetrabutyl titanate monostearate, tetra-n-butyl titanate, tetra (2-ethylhexyl) titanate, tetraisopropyl bis (dioctylphosphite) titanate, , Tetra (2,2-diallyloxymethyl-1-butyl) bis (ditridecyl) phosphite titanate, isopropyl trioctanoyl titanate, isopropyl tricumyl phenyl titanate, isopropyl triisostearoyl Isopropyltrimethoxysilane, isopropyltrimethoxysilane, isobutyltrimethoxysilane, isobutyltrimethoxysilane, isobutyltrimethoxysilane, isobutyltrimethylolpropane titanate, isopropyl taurate, And titanate-based coupling agents such as tris (dioctylpyrophosphate) titanate and isopropyltri (N-amidoethylaminoethyl) titanate.

[(d) Curing accelerator]

(d) As the curing accelerator, there are no particular limitations, and examples thereof include amine curing accelerators, guanidine curing accelerators, imidazole curing accelerators, phosphonium curing accelerators and metal curing accelerators. These may be used singly or in combination of two or more.

Examples of the amine-based curing accelerator include, but are not limited to, trialkylamines such as triethylamine and tributylamine, 4-dimethylaminopyridine, benzyldimethylamine, 2,4,6-tris (dimethylaminomethyl) And amine compounds such as 1,8-diazabicyclo (5,4,0) -undecene (hereinafter referred to as DBU). These may be used singly or in combination of two or more.

Examples of the guanidine curing accelerator include, but are not limited to, dicyandiamide, 1-methylguanidine, 1-ethylguanidine, 1-cyclohexylguanidine, 1-phenylguanidine, 1- (o-tolyl) guanidine, dimethylguanidine, Phenylguanidine, trimethylguanidine, tetramethylguanidine, pentamethylguanidine, 1,5,7-triazabicyclo [4.4.0] deca-5-ene, 7-methyl-1,5,7-triazabicyclo [4.4. 0] deca-5-ene, 1-methylbiguanide, 1-ethylbiguanide, 1-n-butylbiguanide, 1-n-octadecylbiguanide, 1,1-diethylbiguanide, 1-cyclohexylbiguanide, 1-allylbiguanide, 1-phenylbiguanide and 1- (o-tolyl) biguanide. These may be used singly or in combination of two or more.

Examples of the imidazole-based curing accelerator include, but are not limited to, 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, Methylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2- methylimidazole, 2-phenylimidazole, Methylimidazole, 1-benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl- 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl- Diamino-6- [2'-methylimidazolyl- (1 ')] - ethyl-s-triazine, 2,4-diamino- (1 ')] - ethyl-s-triazine, 2,4-diamino-6- [2'-ethyl-4'-methylimidazolyl- -Triazine, 2,4-diamino-6- [2'-methylimidazolyl- (1 ')] - ethyl- Phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2-phenylimidazole isocyanuric acid adduct, 2-methylimidazolium chloride, 2-methylimidazoline, 2-phenyl-2-methylimidazolium chloride, 2- Imidazole compounds such as imidazole and imidazole compounds and adducts with an epoxy resin. These may be used singly or in combination of two or more.

Examples of the phosphonium curing accelerator include, but are not limited to, triphenylphosphine, phosphonium borate compounds, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutylphosphonium decanoate, (4- Methylphenyl) triphenylphosphonium thiocyanate, tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate, and the like. These may be used singly or in combination of two or more.

In the thermosetting resin composition used in the present invention, the content of the curing accelerator (excluding the metal curing accelerator) is preferably in the range of 0.005 to 1% by mass, based on 100% by mass of the nonvolatile component in the resin composition, And more preferably in the range of 0.01 to 0.5% by mass. If the amount is less than 0.005 mass%, the curing will be delayed and the thermosetting time tends to be long. When the amount is more than 1 mass%, the storage stability of the resin composition tends to be lowered.

The metal-based curing accelerator is not particularly limited, and examples thereof include organometallic complexes or organic metal salts of metals such as cobalt, copper, zinc, iron, nickel, manganese and tin. Specific examples of the organometallic complexes include organic cobalt complexes such as cobalt (II) acetylacetonate and cobalt (III) acetylacetonate, organic copper complexes such as copper (II) acetylacetonate, zinc An organic iron complex such as an organic zinc complex and iron (III) acetylacetonate, an organic nickel complex such as nickel (II) acetylacetonate, and an organic manganese complex such as manganese (II) acetylacetonate. Examples of the organic metal salt include zinc octylate, tin octylate, zinc naphthenate, cobalt naphthenate, stannous stearate and zinc stearate. These may be used singly or in combination of two or more.

In the thermosetting resin composition used in the present invention, the addition amount of the metal-based curing accelerator is preferably in the range of 25 to 500 ppm based on the metal-based curing catalyst when the nonvolatile component in the resin composition is 100 mass% , And more preferably in the range of 40 to 200 ppm. If it is less than 25 ppm, the curing property of the resin composition tends to become insufficient, while if it exceeds 500 ppm, the storage stability and the insulating property of the resin composition tend to be lowered.

[(e) Thermoplastic resin]

Examples of the thermoplastic resin (e) include thermoplastic resins such as phenoxy resins, polyimide resins, polyamideimide resins, polyetherimide resins, polysulfone resins, polyethersulfonic acid resins, polyphenylene ether resins, polycarbonate resins, polyetheretherketone resins, And polyester resins. These thermoplastic resins may be used alone or in combination of two or more. The weight average molecular weight of the thermoplastic resin is preferably in the range of 5,000 to 200,000. If it is smaller than this range, the effect of improving film formability and mechanical strength tends not to be sufficiently exhibited. If it is larger than this range, compatibility with the resin composition tends to be insufficient. In the present invention, the weight average molecular weight is measured by a gel permeation chromatography (GPC) method (in terms of polystyrene). Specifically, the weight average molecular weight by GPC method was measured by using LC-9A / RID-6A manufactured by Shimadzu Corporation as a measuring device and Shodex K-800P / K- 804L / K-804L can be measured at a column temperature of 40 占 폚 using chloroform or the like as a mobile phase, using a calibration curve of standard polystyrene.

Specific examples of the phenoxy resin include FX280, FX293 and ERF001 manufactured by Shinnitetsu Chemical Co., Ltd. and YX8100, YL6954, YL6974, YL7213, YL6794, YL7553 and YL7482 manufactured by Mitsubishi Chemical Corporation. Specific examples of the polyvinyl acetal resin include DENKA BUTYRAL 4000-2, 5000-A, 6000-C, 6000-EP, 6000-EP manufactured by Denki Kagaku Kogyo Co., BK series, BX series, KS series, BL series and BM series manufactured by Sekisui Chemical Industry Co., Ltd. Specific examples of the polyimide include polyimide " Rika coat SN20 " and " Rika coat PN20 " manufactured by Shin-Nippon Rikagaku Co., Further, a linear polyimide obtained by reacting a difunctional hydroxyl group-terminated polybutadiene, a diisocyanate compound and a tetrabasic acid anhydride (described in JP-A No. 2006-37083), a polysiloxane skeleton-containing polyimide Patent Document No. 2002-12667, Japanese Patent Application Laid-Open No. 2000-319386, etc.). Specific examples of the polyamideimide include polyamideimide "Viromax HR11NN" and "Viromax HR16NN" manufactured by Toyo Boseki K.K. Examples of the modified polyamideimide include polysiloxane skeleton-containing polyamideimide "KS9100" and "KS9300" manufactured by Hitachi Chemical Co., Ltd. Specific examples of the polyethersulfone include polyethersulfone "PES5003P" manufactured by Sumitomo Chemical Co., Ltd., and the like. Specific examples of the polysulfone include polysulfone "P1700" and "P3500" manufactured by Solvent Advanced Polymers Co., Ltd.

When the thermoplastic resin composition (e) is blended with the thermosetting resin composition used in the present invention, the content of the thermoplastic resin in the resin composition is not particularly limited, but it is preferably from 0.1 to 30 parts by mass per 100% by mass of the non- By mass, more preferably from 1 to 10% by mass. When the content of the thermoplastic resin is too small, the effect of improving the film formability and mechanical strength tends not to be exhibited. When the melt viscosity of the resin composition is too high, if there is a narrow filling region such as overhang in the semiconductor package, There is a possibility of causing voids to be generated by uncharging, or when wire spacing is narrow, there is a possibility of causing defects such as wire flow.

[(f) Rubber Particles]

(f) The rubber particles are not dissolved in, for example, an organic solvent used for preparing a varnish of the resin composition, and are not used as an epoxy resin or the like. Therefore, the rubber particles are present in a dispersed state in the varnish of the resin composition of the present invention. Generally, such rubber particles are prepared by increasing the molecular weight of the rubber component to a level that does not dissolve in an organic solvent or a resin, thereby forming a granular phase.

Preferable examples of the rubber particles that can be used in the thermosetting resin composition include core-shell type rubber particles, crosslinked acrylonitrile butadiene rubber particles, crosslinked styrene butadiene rubber particles, and acrylic rubber particles. The core-shell-type rubber particles are rubber particles having a core layer and a shell layer, for example, a two-layer structure in which the shell layer of the outer layer is composed of a glassy polymer and the core layer of the inner layer is composed of a rubbery polymer, Layer structure in which the intermediate layer is composed of a rubber-like polymer and the core layer is composed of a glass-like polymer. The glassy polymer layer is composed of, for example, a polymer of methyl methacrylate, and the rubbery polymer layer is composed of, for example, a butyl acrylate polymer (butyl rubber). Two or more rubber particles may be used in combination. Specific examples of the core-shell type rubber particles include staplefloyd AC3832, AC3816N, IM-401 1, IM-401 7-17 (trade name, manufactured by Kanto Kasei K.K.), Metablen KW-4426 (Manufactured by Nippon Steel Chemical Co., Ltd.). Specific examples of crosslinked acrylonitrile butadiene rubber (NBR) particles include XER-91 (average particle diameter 0.5 mu m, manufactured by JSR Corporation). Specific examples of the crosslinked styrene butadiene rubber (SBR) particles include XSK-500 (average particle diameter 0.5 mu m, manufactured by JSR Corporation). Specific examples of acrylic rubber particles include Metbrene W300A (average particle diameter 0.1 mu m) and W450A (average particle diameter 0.2 mu m) (manufactured by Mitsubishi Rayon Co., Ltd.).

The average particle diameter of the rubber particles to be blended is preferably in the range of 0.005 to 1 mu m, more preferably in the range of 0.2 to 0.6 mu m. The average particle diameter of the rubber particles used in the present invention can be measured by a dynamic light scattering method. For example, the rubber particles are uniformly dispersed in an appropriate organic solvent by ultrasonic waves or the like, and the particle size distribution of the rubber particles is prepared on the basis of mass using a particle diameter analyzer (FPAR-1000, manufactured by Otsuka Denshi Co., Ltd.) , And measuring the median diameter as the average particle diameter.

The content of the rubber particles is preferably from 1 to 10% by mass, more preferably from 2 to 5% by mass, based on 100% by mass of the nonvolatile matter in the resin composition.

[(g) Flame Retardant]

(g) Examples of flame retardants include organic phosphorus flame retardants, organic nitrogen-containing phosphorus compounds, nitrogen compounds, silicon-based flame retardants, and metal hydroxides. Examples of the organophosphorus flame retardant include phenanthrene-type phosphorus compounds such as HCA, HCA-HQ and HCA-NQ manufactured by Sanko Co., Ltd., phosphorus oxybenzoxazine compounds such as HFB-2006M manufactured by Showa Kobunshi Co., TPPO, TPPO, TPP, TPP, CPP, TCP, TXP, TBP, TOP, KP140, TIBP manufactured by Fukkogaku Kogyo Co., Examples of phosphoric acid ester compounds and organic nitrogen-containing compounds such as PP9, OP930 manufactured by Clariant Co., Ltd. and PX200 manufactured by Daihachi Chemical Co., Ltd. include phosphoric acid ester amides such as SP670 and SP703 manufactured by Shikoku Chemical Industry Co., And phosphazene compounds such as SPB100, SPE100 manufactured by Otsuka Chemical Co., Ltd. and FP-series manufactured by Fushimi Chemical Industries Co., Ltd., and the like. Examples of the metal hydroxide include magnesium hydroxide such as UD65, UD650 and UD653 manufactured by Ube Industries, Ltd., B-30, B-325, B-315, B-308 and B-303 manufactured by Tomoe Kogyo Co., , Aluminum hydroxide such as UFH-20, and the like.

[Other Ingredients]

In the resin composition used in the present invention, other components may be blended as necessary within a range not hindering the effect of the present invention. Examples of the other components include thermosetting resins such as vinyl benzyl compounds, acrylic compounds, maleimide compounds and block isocyanate compounds, organic fillers such as silicone powder, nylon powder and fluorine powder, thickeners such as allene and benton, A coloring agent such as phthalocyanine blue, phthalocyanine green, iodine green, disazo yellow, carbon black, a glass woven fabric, or the like; , Glass nonwoven fabric, sheet-like fiber material such as organic fiber, and the like.

The method for preparing the thermosetting resin composition of the A layer of the present invention is not particularly limited and includes, for example, a method in which a solvent or the like is added to the above-mentioned ingredients, if necessary, followed by mixing using a rotary mixer or the like .

[Manufacturing method of layer A]

The A layer of the present invention is an insulating layer obtained by thermosetting a thermosetting resin composition. In order to form the insulating layer, the thermosetting resin composition may be in the form of a resin paste for a thin film layer, an adhesive sheet for a thin film layer, or a cured sheet for a thin film layer. The process for producing the A layer of these embodiments is illustrated.

(Manufacturing method of resin paste for thin film layer)

A thermosetting resin composition is dissolved in an organic solvent to prepare a resin paste. The resin paste is directly applied on the B layer and dried to form a resin composition layer for a thin film layer. Thereafter, the A layer can be formed by thermosetting. If the thermosetting resin composition is a resin composition having a low viscosity, it may be directly used as a resin paste.

(Manufacturing method of adhesive sheet for thin film layer)

A resin varnish obtained by dissolving a thermosetting resin composition in an organic solvent is prepared and the resin varnish is applied to a support using a device such as a bar coater or a die coater and the organic solvent is dried by heating or hot air blowing, A resin composition layer for a thin film layer is formed to produce an adhesive sheet. Thereafter, the adhesive sheet is thermally cured to form the A layer. The resinous varnish may be impregnated into the sheet-like fibrous base material and dried to form a resin composition layer for a thin film layer on the support.

(Method for producing a cured sheet for a thin film layer)

Further, the adhesive sheet produced by the above method may be thermally cured to provide a cured sheet having no fluidity. Thereafter, the cured sheet is thermally cured to form the A layer.

Examples of the organic solvent for preparing the resin paste or resin varnish include ketones such as acetone, methyl ethyl ketone and cyclohexanone, ethyl acetate, butyl acetate, cellosolve acetate, propylene glycol monomethyl ether acetate, carbitol acetate and the like Carbohydrates such as acetic acid esters, cellosolve and butyl carbitol, aromatic hydrocarbons such as toluene and xylene, and amide solvents such as dimethylformamide, dimethylacetamide and N-methylpyrrolidone. have. Two or more kinds of organic solvents may be used in combination.

Examples of the support for forming the adhesive sheet include films of polyolefins such as polyethylene, polypropylene and polyvinyl chloride, films of polyester such as polyethylene terephthalate (hereinafter sometimes abbreviated as " PET "), polyethylene naphthalate, And various plastic films such as a polycarbonate film and a polyimide film. Alternatively, metal foil such as an aluminum foil, a copper foil or an aluminum foil may be used. The support and the protective film to be described later may be subjected to a surface treatment such as a mud treatment or a corona treatment. Further, the releasing treatment may be carried out with a releasing agent such as a silicone resin-based releasing agent, an alkyd resin-based releasing agent, or a fluororesin-based releasing agent. The thickness of the support is not particularly limited, but is preferably 10 to 150 占 퐉, more preferably 25 to 50 占 퐉.

On the surface of the adhesive sheet where the support does not adhere, a protective film corresponding to the support can be further laminated. The thickness of the protective film is not particularly limited, but is, for example, 1 to 40 m. By laminating a protective film, it is possible to prevent adhesion and scratches of dust or the like to the surface of the resin composition layer for a thin film layer. The adhesive sheet may be rolled up and stored.

The drying conditions for forming the adhesive sheet are not particularly limited, but the drying is performed so that the content of the organic solvent in the resin composition layer for the thin film layer is 10 mass% or less, preferably 5 mass% or less. A varnish containing, for example, 30 to 60 mass% of an organic solvent is dried at 50 to 150 캜 for 3 to 10 minutes depending on the amount of the organic solvent in the varnish and the boiling point of the organic solvent to form the resin composition layer for the thin film layer .

When used as a cured sheet for a thin-film layer, the cured sheet does not necessarily have to be completely thermally cured, but may be cured to such an extent that the effects of the present invention can be exhibited. For example, a cured sheet having a size of 12 cm x 15 cm is vacuum-drawn on an FR4 substrate of 20 cm square and 0.8 mm thick for 30 seconds at a temperature of 80 ° C using a vacuum laminator, The laminate was pressed for 60 seconds through a heat-resistant rubber under the conditions of 80 DEG C and a pressure of 7.0 kgf / cm < 2 > and pressed for 90 seconds under the conditions of a temperature of 80 DEG C and a pressure of 5.5 kgf / When the smoothing treatment is performed, the maximum strike-through length of the thin film layer is measured and the maximum strike-through length is 0.3 mm or less, preferably 0.2 mm or less, more preferably 0.1 mm or less, and further preferably 0 . The heat curing conditions include a curing temperature of 150 to 200 캜 and a curing time of 1 to 10 minutes.

[Evaluation of the A floor]

The glass transition temperature of the A layer of the present invention is preferably 80 占 폚 or higher, more preferably 90 占 폚 or higher, and even more preferably 100 占 폚 or higher, in order to reduce package warpage during packaging. The upper limit of the glass transition temperature is not particularly limited, but from a practical standpoint, it is preferably 300 DEG C or lower, more preferably 280 DEG C or lower.

The term "glass transition temperature" as used herein refers to a value indicating heat resistance and is determined according to the method described in JIS K7179. Specifically, the glass transition temperature is measured using thermal mechanical analysis (TMA), dynamic mechanical analysis (DMA) or the like. Examples of the thermal mechanical analysis (TMA) include TMA-SS6100 (manufactured by Seiko Instruments Inc.), TMA-8310 (manufactured by Rigaku Corporation), and dynamic mechanical analysis (DMA) -6100 (manufactured by SEIKO INSTRUMENTS CO., LTD.). When the glass transition temperature is higher than the decomposition temperature and the glass transition temperature is not actually observed, the decomposition temperature can be regarded as the glass transition temperature in the present invention. The term "decomposition temperature" as used herein is defined as a temperature at which the mass reduction rate measured by the method described in JIS K7120 is 5%.

The thickness of the layer A of the present invention is preferably not less than 1 占 퐉, more preferably not less than 3 占 퐉, more preferably not less than 5 占 퐉, and more preferably not more than 10 占 퐉, from the viewpoint of imparting sufficient rigidity and improving the anti- More preferably at least 15 mu m, particularly preferably at least 20 mu m. From the viewpoints of the thinness of the semiconductor package and the effect of preventing the package warpage, it is preferably not more than 200 占 퐉, not more than 150 占 퐉, more preferably not more than 100 占 퐉, more preferably not more than 90 占 퐉, More preferably 70 mu m or less, particularly preferably 60 mu m or less, particularly preferably 50 mu m or less, particularly preferably 40 mu m or less.

The average coefficient of thermal expansion of the A layer of the present invention is preferably 45 ppm or less, more preferably 40 ppm or less, further preferably 35 ppm or less, still more preferably 30 ppm or less, in order to reduce package warpage during mounting Particularly preferably 25 ppm or less, and particularly preferably 20 ppm or less. From a practical point of view, it is preferably 4 ppm or more, more preferably 5 ppm or more, more preferably 6 ppm or more, even more preferably 7 ppm or more, particularly preferably 8 ppm or more, Particularly preferred.

The modulus of elasticity of the A layer of the present invention is preferably 5 GPa or more, more preferably 8 GPa or more, more preferably 10 GPa or more, and even more preferably 12 GPa or more, in order to reduce package warpage during mounting. Further, from the viewpoint of improving the cutting property of the substrate after sealing, it is preferably 25 GPa or less, more preferably 20 GPa or less.

≪ (B layer) Sealing layer having an elastic modulus of 0.1 GPa or more and 1 GPa or less >

The B layer of the present invention is characterized by having a modulus of elasticity of 0.1 GPa or more and 1 GPa or less in order to reduce warpage. And the B layer means an insulating layer after the heat curing process. The B layer can be obtained by using a thermosetting resin composition and can be used without particular limitation as long as it is suitable for an insulating layer of a semiconductor package. The same resin composition as used for the layer A described above can be used.

[Manufacturing method of layer B]

The B layer of the present invention is an insulating layer obtained by thermosetting a thermosetting resin composition. In order to form the insulating layer, the resin layer for a sealing layer is formed by directly applying a resin paste for a sealing layer onto the C layer and drying the resin layer in the same manner as the above-described method for producing the A layer, The B layer can be formed by curing. Further, a B layer can be formed by forming a resin composition layer for a sealing layer on a support, preparing an adhesive sheet for a sealing layer, and thermally curing the adhesive sheet for a sealing layer.

[Evaluation of B layer]

The thickness of the B layer is not particularly limited as long as the semiconductor element can be buried, but from the viewpoint of sufficiently embedding the semiconductor element, the thickness is preferably 100 탆 or more, more preferably 150 탆 or more, and more preferably 200 탆 or more Do. From the viewpoint of thinning the semiconductor package, the thickness is preferably 600 占 퐉 or less, more preferably 500 占 퐉 or less, and further preferably 400 占 퐉 or less.

The modulus of elasticity of the B layer is preferably 1 GPa or less, more preferably 0.8 GPa or less, and even more preferably 0.5 GPa or less, in order to reduce package warpage and stress relaxation at the time of mounting. On the other hand, from the viewpoint of laminating security, 0.01 GPa or more is preferable, 0.05 GPa or more is more preferable, and 0.1 GPa or more is more preferable.

The elastic modulus of the A layer and the elastic modulus of the B layer are preferably in the range of 0.004 to 0.2 when the elastic modulus of the A layer is 1, 0.15, more preferably in the range of 0.008 to 0.08, and still more preferably in the range of 0.01 to 0.0625.

The average coefficient of thermal expansion of the B layer is preferably 200 ppm or less, more preferably 180 ppm or less, more preferably 160 ppm or less, and even more preferably 140 ppm or less, in order to reduce package warpage at the time of mounting, And even more preferably 120 ppm or less. From a practical viewpoint, it is preferable to be 4 ppm or more, more preferably 30 ppm or more, more preferably 50 ppm or more, and still more preferably 70 ppm or more.

≪ (C layer) circuit substrate layer >

The "circuit substrate layer" described in the present invention is not particularly limited, and examples thereof include a glass epoxy substrate, a metal substrate, a polyester substrate, a polyimide substrate, a BT resin substrate, and a thermosetting polyphenylene ether substrate. The thickness of the circuit substrate layer is preferably 100 占 퐉 or less, more preferably 90 占 퐉 or less, more preferably 80 占 퐉 or less, and even more preferably 70 占 퐉 or less, from the viewpoint of miniaturization of the semiconductor package. From the viewpoint of reducing the package warpage, the thickness is preferably 10 占 퐉 or more, more preferably 20 占 퐉 or more, more preferably 30 占 퐉 or more, even more preferably 40 占 퐉 or more, and particularly preferably 50 占 퐉 or more.

The thickness of the C layer and the thickness of the A layer are preferably in the range of 0.05 to 3 when the thickness of the C layer is 1 and in the range of 0.05 to 2 More preferably in a range of 0.11 to 1.6, more preferably in a range of 0.14 to 1.4, still more preferably in a range of 0.17 to 1.2.

The thickness of the C layer and the thickness of the B layer are preferably in the range of 0.05 to 10 when the thickness of the C layer is 1 and in the range of 0.08 to 9 , More preferably in the range of 0.11 to 8, more preferably in the range of 0.14 to 7, and still more preferably in the range of 0.17 to 6.

<Manufacturing Method of Semiconductor Package>

A method of manufacturing a semiconductor package according to the present invention comprises the steps of: (A layer) a thin film layer having an elastic modulus of 5 GPa or more and 25 GPa or less, (B layer) a sealing layer having an elastic modulus of 0.1 GPa or more and 1 GPa or less, As a method of manufacturing a semiconductor package, a method in which a B layer covers a semiconductor element on a C layer and is sealed.

First, the method of forming the B layer will be described. For example, there is a method of forming the B layer by directly applying the resin paste for the sealing layer onto the C layer and drying. As another forming method, there is a method of forming a B layer by laminating an adhesive sheet for a sealing layer on a C layer.

[Method 1] A method of forming a sealing layer using a resin paste for a sealing layer

A resin composition layer for a sealing layer is formed on a circuit substrate layer by a screen printing process using a resin paste for a sealing layer. In the case of solventless printing, drying after printing is not required. As another method, a resin composition layer for a sealing layer is formed by a transfer molding process using a resin paste for a sealing layer. After the screen printing process or after the transfer molding process, the thermosetting may be performed to such an extent that the adhesiveness to the thin film layer is not impaired.

[Method 2] A sealing layer forming method using an adhesive sheet for a sealing layer

The adhesive sheet for a sealing layer is opposed to the circuit substrate layer and laminated to form a resin composition layer for a sealing layer on the C layer. After laminating, the support is peeled off. After the support is peeled, it may be thermally cured to such an extent that adhesion with the thin film layer is not impaired.

Next, a method of forming the A layer will be described. After forming the sealing layer on the circuit board, a thin film layer is formed on the sealing layer. For the formation of the thin film layer, the same method as the method of forming the sealing layer can be used. For example, there is a method of forming the A layer by applying the resin paste for the thin film layer on the B layer and drying the same, and a method of forming the A layer by laminating the adhesive sheet for the thin film layer on the B layer. The A layer may also be formed by laminating a cured sheet for a thin film layer, in which the adhesive sheet for a thin film layer is cured, on the B layer.

[Method 3] Method for forming a thin film layer using a resin paste for a thin film layer

A resin composition layer for a sealing layer is formed by the method 1 or 2 described above. Subsequently, a resin composition layer for a thin film layer is formed on the sealing layer by a screen printing process using the resin paste for a thin film layer. In the case of solventless printing, drying after printing is not required. As another method, a resin composition layer for a thin film layer is formed by a transfer molding process using a resin paste for a thin film layer. Then, a thin film layer is formed by thermosetting.

[Method 4] Method for forming a thin film layer using an adhesive sheet for a thin film layer

A resin composition layer for a sealing layer is formed by the method 1 or 2 described above. Subsequently, the thin-film layer adhesive sheet is opposed to the sealing layer, laminated, and thermally cured to form a thin-film layer. After laminating, the support is peeled off.

[Method 5] Method for forming a thin film layer using a cured sheet for a thin film layer

A resin composition layer for a sealing layer is formed by the above method 1 or 2. It is preferable that the resin composition layer for a sealing layer has a fluidity and a tuck enough to be in close contact with the cured sheet for a thin layer without curing. The cured product sheet for a thin film layer is opposed to the resin composition layer for a sealing layer, laminated, and thermally cured to form a sealing layer and a thin film layer. After laminating, the support is peeled off.

As described above, the semiconductor package can be obtained by forming the sealing layer and the thin film layer through the thermal curing process and forming the insulating layer.

Next, a method of previously laminating an adhesive sheet for a thin-film layer and an adhesive sheet for a sealing layer to form a double-layered adhesive sheet and forming the sealing layer and the thin-film layer using the double-layered adhesive sheet will be described.

Specifically, the following steps can be mentioned.

Step 1) A step of applying a resin varnish to a support and drying to prepare an adhesive sheet for a thin-film layer, or a step of impregnating a resinous varnish into a sheet-like fibrous base material and drying to prepare an adhesive sheet for a thin-

Step 2) A step of applying a resin varnish to a support and drying to produce an adhesive sheet for a sealing layer

Step 3) A step of laminating an adhesive sheet for a thin-film layer and an adhesive layer for a sealing layer to remove the support of the adhesive sheet for a sealing layer to produce a double-

Step 4) Step of laminating the resin composition layer surface for the sealing layer of the double-layered adhesive sheet on the C layer

Thereafter, the semiconductor package is obtained by forming the sealing layer and the thin film layer by the heat curing process and forming the insulating layer. or,

Step 1) A step of applying a resin varnish to a support, followed by drying and thermosetting to prepare a cured sheet for a thin film layer, or a step of impregnating a resinous varnish into a sheet-like fiber substrate, drying and thermally curing the cured sheet, Manufacturing process

Step 2) A step of applying a resin varnish to a support and drying to produce an adhesive sheet for a sealing layer

Step 3) A step of laminating a cured product sheet for a thin-film layer and an adhesive sheet for a sealing layer, and removing the support of the adhesive sheet for a sealing layer to produce a partially cured two-

Step 4) Step of laminating the resin composition layer surface for the sealing layer of the partially cured two-layer adhesive sheet on the C layer

Thereafter, the semiconductor package is obtained by forming the sealing layer and the thin film layer by the heat curing process and forming the insulating layer.

The semiconductor element is disposed on the C layer, and the B layer is sealed so as to cover the semiconductor element on the C layer. The thickness of the semiconductor element is preferably 300 占 퐉 or less, more preferably 250 占 퐉 or less, and further preferably 200 占 퐉 or less, from the viewpoint of thinning of the semiconductor package. Further, from the viewpoint of sufficiently exhibiting the performance, it is preferably 50 占 퐉 or more, more preferably 100 占 퐉 or more.

[Screen printing process]

When screen printing the resin paste, the viscosity of the resin paste is preferably 20 Pa · S / 25 ° C to 40 Pa · S / 25 ° C. The amount of heat loss is preferably 5% or less in order to suppress the occurrence of voids after screen printing. After printing, the organic solvent is dried at 50 to 150 DEG C for 10 to 60 minutes.

[Transfer molding step]

This step is a step of transfer molding a resin paste. A circuit board is placed in a metal mold, a resin paste is introduced into the metal mold, molded at 170 to 190 ° C for 1 to 5 minutes, and then molded and released from the mold.

[Lamination process]

In this step, the adhesive sheet for a sealing layer is placed on a circuit board so that the resin surface of the adhesive sheet for a sealing layer and the surface of the circuit board on which the semiconductor elements are laminated are covered with the semiconductor element on the circuit board, And is laminated on a circuit board by heating and pressurizing through a material. Alternatively, a resin composition layer or a cured layer side for a thin film layer of the adhesive sheet for a thin-film layer or a cured product sheet for a thin-film layer is disposed on the resin composition layer or the sealing layer for a sealing layer and heated and pressed through an elastic material under reduced pressure This is a step of laminating. Under reduced pressure, the air pressure is reduced to 20 mmHg (26.7 hPa) or less. In the laminating process, heating and pressing can be performed by pressing a metal plate such as a heated SUS hard plate from the support side. However, instead of directly pressing the metal plate, heat resistant rubber is preferably used so that the sealing layer sufficiently follows the semiconductor elements on the circuit board. And presses are carried out through an elastic material such as rubber. The press has a temperature of preferably 70 to 140 캜 (more preferably 80 to 130 캜), a pressure of preferably 1 to 11 kgf / ㎠ (9.8 × 10 ^{4 to} 107.9 × 10 ⁴ N / Is preferably in the range of 10 to 180 seconds (more preferably 20 to 130 seconds). Subsequently, pressing may be performed using an SUS hard plate under atmospheric pressure.

The lamination process can be continuously performed by a commercially available vacuum laminator. As a commercially available vacuum laminator, for example, Vacuum Pressure Laminator manufactured by Meikishaishi Kisho Co., Ltd., Versa Applicator manufactured by Nichigo Morton Co., Ltd., and the like can be given.

[Thermal curing process]

This step is a thermosetting step of thermally curing the resin composition layer for a sealing layer and the resin composition layer for a thin film layer to form an insulating layer. The heat curing conditions vary depending on the type of the thermosetting resin composition and the like, but it is preferable that the curing temperature is from 150 to 200 캜 and the curing time is from 15 to 90 minutes. After a screen printing process, a transfer molding process, or a lamination process, a thermosetting process is performed.

[Step of peeling the support]

This step is a step of peeling the support from the semiconductor package. The support may be peeled off manually or mechanically peeled off by an automatic peeling apparatus. When a metal foil is used as a support, it may be removed by etching with an etching solution. The peeling of the support is preferably performed before the heat curing step.

The thickness of the insulating layer is basically followed by the total thickness of the thin film layer and the sealing layer. Therefore, the thickness of the insulating layer is preferably 101 to 600 占 퐉, more preferably 105 to 550 占 퐉, and even more preferably 110 to 500 占 퐉. The thickness of the insulating layer may be measured by a microscope or the like in a cross-sectional view after curing. The thickness of the resin composition layer for the thin film layer and the thickness of the thin film layer, the resin composition layer for the sealing layer and the sealing layer are basically the same value.

The package warp value of the semiconductor package after thermosetting is preferably 235 占 퐉 or less, more preferably 220 占 퐉 or less, further preferably 200 占 퐉 or less, and 180 占 퐉 or less, in view of improvement in mounting performance after the heat- More preferably 160 μm or less, particularly preferably 150 μm or less, particularly preferably 140 μm or less, further preferably 130 μm or less. On the other hand, the lower limit of the package warpage value is preferably as low as less than 20 탆, not less than 10 탆, not less than 5 탆, not less than 0.1 탆, and not less than 0 탆.

The package warp value of the semiconductor package after the reflow treatment at a peak temperature of 260 占 폚 for 10 seconds or more is preferably 360 占 퐉 or less, more preferably 330 占 퐉 or less, and 310 占 퐉 or less from the viewpoint of improvement in mounting property to a printed wiring board More preferably 250 占 퐉 or less, particularly preferably 220 占 퐉 or less, particularly preferably 220 占 퐉 or less, particularly preferably 200 占 퐉 or less, and even more preferably 170 占 퐉 or less. On the other hand, the lower limit of the package warpage value is preferably as low as less than 20 탆, not less than 10 탆, not less than 5 탆, not less than 0.1 탆, and not less than 0 탆.

Example

Hereinafter, the present invention will be described concretely with reference to Examples, but the present invention is not limited to these Examples. In the following description, &quot; part &quot; means &quot; part by mass &quot;.

[Measurement method and evaluation method]

First, various measurement methods and evaluation methods will be described.

[Thickness measurement]

The resin composition layer for a thin film layer and the resin composition layer for a seal layer used in Examples and Comparative Examples were measured using a contact type layer thickness meter (MCD-25 MJ, manufactured by Mitsutoyo Co., Ltd.).

[Measurement and evaluation of package warpage]

The semiconductor packages obtained in Examples and Comparative Examples were diced to 2.1 cm x 1.6 cm, and the package warpage of the semiconductor packages was measured at room temperature. The measuring device was measured in accordance with JEITA ED-7306 of the Electronics and Information Technology Industry Association using a shadow moire measuring device (Thermoire AXP: manufactured by Akrometrix). Specifically, assuming that the virtual plane calculated by the least squares method of the entire data on the substrate surface of the measurement region is a reference plane, A is the maximum in the vertical direction from the reference plane, and | A | The value of (Coplanarity) + B | was evaluated as package warpage as follows.

⊚: less than 100 탆

?: 100 占 퐉 or more and less than 150 占 퐉.

?: 150 占 퐉 or more and less than 240 占 퐉

X: 240 占 퐉 or more.

[Measurement and evaluation of package warp after reflow]

The semiconductor packages obtained in Examples and Comparative Examples were diced to 2.1 cm x 1.6 cm and the package warpage of the semiconductor package after the reflow treatment was measured at room temperature. The measurement device was measured in accordance with JEITA ED-7306 of the Electronics and Information Technology Industry Association using a shadow moire measuring device (ThermoireAXP: manufactured by Akrometrix). Specifically, assuming that the virtual plane calculated by the least squares method of the entire data on the substrate surface of the measurement region is a reference plane, A is the maximum in the vertical direction from the reference plane, and | A | The value of (Coplanarity) + B | was evaluated as a package warp value as follows.

⊚: less than 160 탆

?: 160 占 퐉 or more and less than 260 占 퐉.

?: 260 占 퐉 or more and less than 365 占 퐉

X: at least 365 占 퐉

[Measurement of Average Thermal Expansion Rate and Glass Transition Temperature]

The adhesive sheets obtained in Examples and Comparative Examples were thermally cured by heating at 180 캜 for 90 minutes, and the PET film was peeled off to obtain a sheet-like cured product. The cured product was cut into test pieces having a width of about 5 mm and a length of about 15 mm, and thermomechanical analysis was carried out by a tensile weighting method using a thermomechanical analyzer TMA-SS6100 (manufactured by Seiko Instruments Inc.). After the test piece was mounted on the above apparatus, the test piece was continuously measured twice under the measurement conditions of a load of 1 g and a temperature raising rate of 5 캜 / min. The average thermal expansion coefficient (ppm) from 25 占 폚 to 150 占 폚 was calculated in the second measurement. The glass transition temperature (占 폚) was calculated from the point at which the slope of the dimensional change signal was changed in the second measurement.

[Measurement of elastic modulus]

The adhesive sheets obtained in Examples and Comparative Examples were thermally cured by heating at 180 캜 for 90 minutes, and the PET film was peeled off to obtain a sheet-like cured product. The cured product was cut into test pieces having a width of about 7 mm and a length of about 40 mm and subjected to dynamic mechanical analysis in a tensile mode using a dynamic mechanical analyzer DMS-6100 (manufactured by Seiko Instruments Inc.). The test piece was mounted on the apparatus and measured under the measurement conditions of a frequency of 1 Hz and a temperature raising rate of 5 캜 / min. In this measurement, the value of the storage elastic modulus (E ') at 25 ° C was read.

&Lt; Preparation Example 1 &

, 19 parts of a liquid bisphenol A type epoxy resin (epoxy equivalent 180, "Epikote 828EL" manufactured by Mitsubishi Chemical Corporation) and 43 parts of a naphthalene type tetrafunctional epoxy resin (epoxy equivalent 163, "HP4700" 31 parts of MEK and 31 parts of cyclohexanone was heated and dissolved while stirring. 31 parts of a phenolic curing agent having a novolac structure ("LA7052" manufactured by DIC Corporation, an MEK solution having a solid content of 60% by weight, a phenolic hydroxyl equivalent of 120), a phenoxy resin (molecular weight 50000, Mitsubishi Chemical Corporation , 8 parts of a nonvolatile matter (40% by weight of a nonvolatile fraction of "E1256" manufactured by Mitsubishi Chemical Corporation) (MEK solution), 0.1 part of a curing catalyst ("2E4MZ" manufactured by Shikoku Chemical Industry Co., Ltd.) and 320 parts of spherical silica (SOC2) And uniformly dispersed in a mixer to produce a resin varnish 1.

&Lt; Preparation Example 2 &

40 parts of a polyimide resin ("T2" manufactured by Ajinomoto Fine Techno Co., Ltd.), 40 parts of diethylene glycol monoethyl ether acetate of bisphenol A novolak type epoxy resin (hereinafter referred to as EDGAc) 9.5 parts of a mixed varnish (solid content 75% by weight, epoxy equivalent 210, "157S70" manufactured by Mitsubishi Chemical Corporation), 10 parts by weight of phenol novolak resin (DIC Co., , 2.1 parts of a toluene solution (TD2090 manufactured by Mitsubishi Chemical Corporation, MEK solution having a solid content of 60% by weight, phenolic hydroxyl equivalent 105), 0.1 part of imidazole derivative (P200H50 manufactured by Mitsubishi Chemical Corporation) and 15 parts of spherical silica The mixture was uniformly dispersed in a high-speed rotary mixer to prepare a resin varnish 2.

&Lt; Preparation Example 3 &

23.5 parts of a liquid bisphenol A type epoxy resin (epoxy equivalent 180, "Epicoat 828 EL" manufactured by Mitsubishi Chemical Corporation) and 20 parts of a naphthalene type tetrafunctional epoxy resin (epoxy equivalent 163, "HP4700" Was dissolved by heating in a mixed solution of 17 parts of MEK and 17 parts of cyclohexanone with stirring. 31 parts of a phenolic curing agent having a novolak structure ("LA7054" manufactured by DIC Corporation, an MEK solution having a solid content of 60% by weight, a phenolic hydroxyl equivalent of 125), a phenoxy resin (molecular weight 50000, Mitsubishi Chemical Corporation , 20 parts of a nonvolatile matter (40% by weight of a nonvolatile component of E1256 manufactured by Mitsubishi Chemical Corporation), 0.15 part of a curing catalyst ("2E4MZ" manufactured by Shikoku Chemical Industry Co., Ltd.) and 50 parts of spherical silica (SOC2) And the mixture was homogeneously dispersed with a mixer to prepare a resin varnish 3.

&Lt; Preparation Example 4 &

, 19 parts of a liquid bisphenol A type epoxy resin (epoxy equivalent 180, "Epikote 828 EL" manufactured by Mitsubishi Chemical Corporation) and 15 parts of a naphthalene type tetrafunctional epoxy resin (epoxy equivalent 163, "HP4700" Was dissolved by heating in a mixed solution of 14 parts of MEK and 14 parts of cyclohexanone with stirring. 20 parts of a phenolic curing agent having a novolac structure ("LA7052" manufactured by DIC Corporation, an MEK solution having a solid content of 60% by weight, a phenolic hydroxyl equivalent of 120), a phenoxy resin (molecular weight 50000, Mitsubishi Chemical Corporation , 15 parts of a nonvolatile matter (40% by weight of a nonvolatile matter of "E1256" manufactured by Mitsubishi Chemical Corporation) MEK solution), 0.2 part of a curing catalyst ("2E4MZ" manufactured by Shikoku Chemical Industry Co., Ltd.) and 75 parts of spherical silica And the mixture was homogeneously dispersed with a mixer to prepare a resin varnish 4.

&Lt; Production Example 5 &

15.5 parts of a polyimide resin ("T2" manufactured by Ajinomoto Fine Techno Co., Ltd.), 15.0 parts of diethylene glycol monoethyl ether acetate of bisphenol A novolak type epoxy resin (hereinafter referred to as EDGAc) 14.4 parts of a mixed varnish (solids content: 75% by weight, epoxy equivalent: 210, "157S70" manufactured by Mitsubishi Chemical Co., Ltd.), and phenol novolac resin (DIC Co., Manufactured by Mitsubishi Chemical Co., Ltd.), 0.2 part of imidazole derivative ("P200H50" manufactured by Mitsubishi Chemical Corporation), 15 parts of spherical silica (SOC2) And the mixture was uniformly dispersed in a high-speed rotary mixer to prepare a resin varnish 5.

&Lt; Example 1 >

(Production of a cured sheet for a thin film layer)

The resin varnish 1 was uniformly applied to a PET film (38 占 퐉) of an alkyd type mold release treatment agent with a bar coater so that the thickness of the resin composition layer for a thin film layer after drying became 10 占 퐉. And dried for a minute to obtain an adhesive sheet for a thin film layer. The resin sheet was thermally cured at 180 DEG C for 10 minutes to obtain a cured sheet for a thin film layer. The glass transition temperature of the cured layer was 120 占 폚.

(Production of adhesive sheet for sealing layer)

The resin varnish 2 was uniformly coated on the release-treated surface of the PET film (38 占 퐉) treated with the alkyd type releasing agent with a bar coater so that the thickness of the resin composition layer for the sealing layer after drying became 300 占 퐉, (Average 100 DEG C) for 7 minutes to obtain an adhesive sheet for a sealing layer.

(Production of a partially cured two-layer adhesive sheet)

A cured product sheet for a sealing layer of an adhesive sheet for a sealing layer came in contact with a cured product side of a cured product sheet for a thin film layer and a vacuum laminator V160 manufactured by Morton International, After the suction, the laminated sheet was laminated from the top of the PET film through the heat-resistant rubber for 20 seconds under the conditions of a pressure of 1.0 kgf / cm &lt; 2 &gt;.

(Lamination and smoothing of a partially cured two-layer adhesive sheet)

The above-mentioned two-layered sheet was placed so that the resin composition layer for the sealing layer was brought into contact with the side where the semiconductor element of the circuit board (semiconductor element size 2.0 cm x 1.25 cm, thickness 200 m, core substrate thickness 60 m) Lt; / RTI &gt; The laminate was vacuum-drawn at a temperature of 100 占 폚 for 30 seconds using a vacuum pressurized laminator MVLP-500 manufactured by Meikyusha Kagoshisho Co., Ltd., and then heated at a temperature of 120 占 폚 under a pressure of 7.0 kg / Followed by pressing for 30 seconds through a rubber for 30 seconds. Subsequently, the laminated sheet was subjected to pressing under an atmospheric pressure using an SUS hard plate under the conditions of a temperature of 120 DEG C and a pressure of 6.0 kg / cm &lt; 2 &gt; for 60 seconds.

(Heat curing of the partially cured two-layer adhesive sheet)

After the PET film was peeled off, the circuit board obtained by laminating the two-layer sheets was thermally cured at 180 캜 for 90 minutes using a hot air circulating path to form an insulating layer. Thus, a semiconductor package in which a semiconductor element was sealed in an insulating layer was obtained.

&Lt; Example 2 >

In a production process of a cured sheet for a thin-film layer, a resin varnish 1 was uniformly applied to a PET film (38 탆) of an alkyd type mold release treatment agent with a bar coater so that the thickness of the dried resin composition layer for a thin- A semiconductor package was obtained in the same manner as in Example 1 except for the above.

&Lt; Example 3 >

In the production process of the cured sheet for a thin film layer, a resin varnish 1 was uniformly coated on a PET film (38 탆) of an alkyd type mold release treatment agent with a bar coater such that the thickness of the dried resin composition layer for a thin film layer was 40 탆 A semiconductor package was obtained in the same manner as in Example 1 except for the above.

<Example 4>

In a production process of a cured sheet for a thin-film layer, a resin varnish 1 was uniformly coated on a PET film (38 탆) of an alkyd type mold release treatment agent with a bar coater so that the thickness of the dried resin composition layer for a thin- A semiconductor package was obtained in the same manner as in Example 1 except for the above.

&Lt; Example 5 >

A semiconductor package was obtained in the same manner as in Example 3 except that the adhesive sheet for a thin film layer was used instead of the cured sheet for a thin film layer without thermally curing the adhesive sheet for a thin film layer in the process of producing a cured sheet for a thin film layer .

&Lt; Example 6 >

A semiconductor package was obtained in the same manner as in Example 3 except that the resin varnish 3 was used in place of the resin varnish 1 in the production process of the cured sheet for a thin film layer.

&Lt; Example 7 >

In the production process of the cured sheet for a thin-film layer, a resin varnish 1 was uniformly applied to a PET film (38 占 퐉) of an alkyd type mold release treatment agent with a bar coater so that the thickness of the dried resin composition layer for a thin- A semiconductor package was obtained in the same manner as in Example 1 except for the above.

&Lt; Example 8 >

Except that the resin varnish 2 was uniformly applied to a PET film (38 占 퐉) of an alkyd type mold release treating agent by a bar coater so that the thickness of the resin composition layer for a sealing layer after drying became 100 占 퐉 in the process of producing the adhesive layer for a sealing layer , And a semiconductor package was obtained in the same manner as in Example 2.

&Lt; Example 9 >

Except that the resin varnish 2 was uniformly applied to a PET film (38 占 퐉) of an alkyd type mold release treating agent by a bar coater so that the thickness of the resin composition layer for a sealing layer after drying became 600 占 퐉 in the production process of the adhesive sheet for a sealing layer , And a semiconductor package was obtained in the same manner as in Example 2.

&Lt; Example 10 >

A semiconductor package was obtained in the same manner as in Example 8 except that the core substrate thickness was 40 占 퐉.

&Lt; Example 11 >

A semiconductor package was obtained in the same manner as in Example 5 except that the thickness of the adhesive sheet for the thin-film layer was 20 占 퐉 and the core substrate thickness was 100 占 퐉.

&Lt; Example 12 >

The resin varnish 4 was impregnated with a glass woven fabric and dried at a temperature of 80 to 120 캜 (average 100 캜) to form a thin film layer (not shown) on the PET film (38 탆) of the alkyd type mold releasing agent, Thereby obtaining a pressure-sensitive adhesive sheet. The resin sheet was thermally cured at 180 DEG C for 10 minutes to obtain a cured sheet for a thin film layer. The glass transition temperature of the cured layer was 140 占 폚. A semiconductor package was obtained in the same manner as in Example 1 except that the cured product sheet for the thin-film layer was used.

&Lt; Example 13 >

A semiconductor package was obtained in the same manner as in Example 11 except that the resin varnish 5 was used in place of the resin varnish 2 in the production process of the adhesive sheet for a sealing layer.

&Lt; Example 14 >

In the production process of the cured sheet for a thin-film layer, a resin varnish 1 was uniformly applied to a PET film (38 탆) of an alkyd type mold release treatment agent with a bar coater so that the thickness of the dried resin composition layer for a thin- A semiconductor package was obtained in the same manner as in Example 1 except for the above.

&Lt; Comparative Example 1 &

A semiconductor package was obtained in the same manner as in Example 1 except that the semiconductor element was sealed only with the adhesive sheet for the sealing layer without using the cured sheet for the thin film layer.

&Lt; Comparative Example 2 &

A semiconductor package was obtained in the same manner as in Comparative Example 1 except that Resin Varnish 1 was used instead of Resin Varnish 2 of Comparative Example 1.

&Lt; Comparative Example 3 &

(Production of a cured sheet for a thin film layer)

A resin varnish 2 was uniformly applied to a PET film (38 탆) of an alkyd type mold releasing agent with a bar coater so that the thickness of the resin composition layer after drying became 40 탆 and dried at 80 to 120 캜 (average 100 캜) for 7 minutes To obtain an adhesive sheet. The resin sheet was thermally cured at 180 DEG C for 10 minutes to obtain a cured sheet. The glass transition temperature of the cured layer was 90 占 폚.

(Production of adhesive sheet for sealing layer)

The resin varnish 1 was uniformly coated on the release-treated surface of the PET film (38 占 퐉) treated with the alkyd type releasing agent with a bar coater so that the thickness of the resin composition layer after drying became 300 占 퐉, Deg.] C for 7 minutes to obtain an adhesive sheet. Thereafter, a semiconductor package was obtained in the same manner as in Example 1.

&Lt; Comparative Example 4 &

Except that the resin varnish 2 was uniformly applied to a PET film (38 占 퐉) of an alkyd type mold release treating agent by a bar coater so that the thickness of the resin composition layer for a sealing layer after drying was 80 占 퐉 in the production process of the adhesive sheet for a sealing layer , And a semiconductor package was obtained in the same manner as in Example 2.

&Lt; Comparative Example 5 &

Except that the resin varnish 2 was uniformly applied to a PET film (38 占 퐉) of an alkyd type mold release treating agent by a bar coater so that the thickness of the resin composition layer for a sealing layer after drying was 700 占 퐉 in the process of producing the adhesive sheet for a sealing layer , And a semiconductor package was obtained in the same manner as in Example 2.

The results are shown in Tables 1, 2, and 3.

From the results shown in Tables 1 and 2, since the semiconductor packages of the present invention are used in Examples 1 to 14, they are semiconductor packages with less package warpage. On the other hand, from the results shown in Table 3, the semiconductor packages of the present invention were not used in Comparative Examples 1 to 5, resulting in a large package warpage.

[ Industrial Availability ]

It is possible to provide a semiconductor package that can suppress package warp even if the circuit board is thin. In addition, it is possible to provide vehicles such as computers, mobile phones, digital cameras, televisions, and the like equipped with these, motorcycles, cars, tanks, ships, and aircraft.

1: semiconductor package
2: Thin film layer
3: sealing layer
4: circuit board layer
5: Semiconductor device

Claims (14)

(A layer) A thin film layer having a storage elastic modulus of 5 GPa or more and 25 GPa or less,
(B layer) A sealing layer having a storage elastic modulus of 0.1 GPa or more and 1 GPa or less,
(C layer) circuit substrate layer
Respectively,
The thickness of the A layer is 1 to 200 mu m, the thickness of the B layer is 100 to 600 mu m, the thickness of the C layer is 1 to 100 mu m,
When the thickness of the C layer is 1 and the thickness of the A layer is in the range of 0.05 to 3 and the thickness of the C layer is 1, the thickness of the B layer is in the range of 0.05 to 10,
The average thermal expansion coefficient of the A layer is 45 ppm or less, the average thermal expansion coefficient of the B layer is 200 ppm or less,
Wherein a package warpage is 235 占 퐉 or less. delete delete The method according to claim 1, wherein the thickness of the A layer is 10 to 150 占 퐉, the thickness of the B layer is 100 to 500 占 퐉, the thickness of the C layer is 50 to 100 占 퐉 and the package warpage is 0.1 to 200 占 퐉 . 5. The semiconductor package according to claim 4, wherein the thickness of the A layer is 20 to 70 mu m. The semiconductor package according to claim 1, wherein the package warp after the reflow process is 360 占 퐉 or less. 7. The semiconductor package according to claim 6, wherein the package warp after the reflow treatment is 0.1 to 250 mu m. The method of manufacturing a semiconductor package according to any one of claims 1 to 7, wherein a resin layer for a sealing layer is directly applied on the C layer and dried to form a B layer. The method of manufacturing a semiconductor package according to any one of claims 1 to 7, characterized in that a B layer is formed by laminating an adhesive sheet for a sealing layer on the C layer. The method of manufacturing a semiconductor package according to any one of claims 1 to 7, wherein the resin layer for thin film layer is coated on the layer B and dried to form the layer A. The method for manufacturing a semiconductor package according to any one of claims 1 to 7, characterized in that an A layer is formed by laminating an adhesive sheet for a thin film layer on a B layer. The method of manufacturing a semiconductor package according to any one of claims 1 to 7, wherein the layer A is formed by laminating a cured sheet for a thin film layer on the layer B. A process for producing a semiconductor package according to any one of claims 1 to 7, characterized by comprising the following steps 1) to 4)
Step 1) A step of applying a resin varnish to a support and drying to prepare an adhesive sheet for a thin-film layer, or a step of impregnating a resinous varnish into a sheet-like fibrous base material and drying to prepare an adhesive sheet for a thin-
Step 2) A step of applying a resin varnish to a support and drying to produce an adhesive sheet for a sealing layer
Step 3) A step of laminating an adhesive sheet for a thin-film layer and an adhesive layer for a sealing layer to remove the support of the adhesive sheet for a sealing layer to produce a double-
Step 4) A step of laminating the surface of the resin composition layer for a sealing layer of the double-layered adhesive sheet on the C layer. A process for producing a semiconductor package according to any one of claims 1 to 7, characterized by comprising the following steps 1) to 4)
Step 1) A step of applying a resin varnish to a support, followed by drying and thermosetting to produce a cured sheet for a thin film layer, or a step of impregnating a resinous varnish into a sheet-like fibrous substrate and drying and thermally curing to obtain a cured sheet for a thin layer Process
Step 2) A step of applying a resin varnish to a support and drying to produce an adhesive sheet for a sealing layer
Step 3) A step of laminating a cured product sheet for a thin-film layer and an adhesive sheet for a sealing layer, and removing the support of the adhesive sheet for a sealing layer to produce a partially cured two-
Step 4) A step of laminating the surface of the resin composition layer for the sealing layer of the partially cured two-layer adhesive sheet on the C layer.

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