TWI539564B - Semiconductor package - Google Patents

Description

Semiconductor package

The invention relates to semiconductor packages.

In the method of manufacturing a semiconductor package, Patent Document 1 discloses a method of reducing the damage of the semiconductor wafer by performing a simple thermal compression bonding process, but it is not possible to reduce the size and thickness of the semiconductor package. Further, Patent Document 2 describes a method of suppressing warpage of a package when a semiconductor package is suppressed, but it is necessary to have troublesome work such as transfer molding.

Prior technical literature Patent literature

Patent Document 1: JP-A-2009-267344

Patent Document 2: JP-A-2002-348352

Summary of invention

An object of the present invention is to provide a semiconductor package which can suppress warpage of a package even if the circuit board is thinned.

In order to solve the above problems, the inventors have focused on the review and found that The invention can be accomplished with a particular film layer, a particular sealing layer.

That is, the present invention includes the following.

[1] A semiconductor package comprising: (A layer) a film layer having an elastic modulus of 5 GPa or more and 25 GPa or less, and a (B layer) sealing layer having an elastic modulus of 0.1 GPa or more and 1 GPa or less; The C layer) circuit substrate layer, in addition, the thickness of the A layer is 1 to 200 μm, the thickness of the B layer is 100 to 600 μm, the thickness of the C layer is 1 to 100 μm, and the warpage of the package is 235 μm or less.

[2] The semiconductor package according to [1] above, wherein when the thickness of the C layer is 1, the thickness of the layer A is in the range of 0.05 to 3.

[3] The semiconductor package according to the above [1] or [2] wherein, when the thickness of the C layer is 1, the thickness of the B layer is in the range of 0.05 to 10.

[4] The semiconductor package according to any one of [1] to [3] wherein the thickness of the layer A is 10 to 150 μm, the thickness of the layer B is 100 to 500 μm, and the thickness of the layer C is 50 to 100 μm, the package warp is 0.1 to 200 μm.

[5] The semiconductor package according to any one of [1] to [4] wherein the layer A has a thickness of 20 to 70 μm.

[6] The semiconductor package according to any one of [1] to [5] wherein the package warpage after the reflow treatment is 360 μm or less.

[7] The semiconductor package according to any one of [1] to [6] wherein the package warpage after the reflow treatment is 0.1 to 250 μm.

[8] The production method according to any one of the above [1] to [7] wherein the sealing layer is directly coated with a resin paste and dried on the layer C to form a layer B.

[9] The production method according to any one of [1] to [7] wherein the sealing layer is laminated on the C layer with a bonding sheet to form a B layer.

[10] The production method according to any one of the above [1] to [7] wherein the film layer is coated with a resin paste and dried on the layer B to form an A layer.

[11] The production method according to any one of [1] to [7] above, wherein the film layer is formed by laminating a film layer on the B layer with a subsequent sheet.

[12] The production method according to any one of [1] to [7] wherein the film layer is laminated on the B layer by a cured sheet to form an A layer.

[13] The method for producing a semiconductor package according to any one of the above [1] to [7] characterized by comprising the following steps 1) to 4),

Step 1) a step of applying a resin varnish to a support and then drying, forming a film layer for a subsequent sheet, or impregnating the flaky fiber substrate with a resin varnish, and drying the film layer

Step 2) Applying the resin varnish to the support and drying, and manufacturing the sealing layer with the subsequent sheet

Step 3) After laminating the film layer with the succeeding sheet and the sealing layer, the support sheet of the sealing layer is removed, and the double layer and the sheet are produced. Step

Step 4) A step of laminating the sealing layer of the double-layered sheet with the resin composition layer on the layer C.

[14] The method for producing a semiconductor package according to any one of the above [1] to [7] characterized by comprising the following steps 1) to 4),

Step 1) applying a resin varnish to a support, drying and thermally hardening, producing a cured sheet for a film layer, or impregnating the flaky fiber substrate with a resin varnish, drying and thermally hardening, and producing a cured product for a film layer Sheet step

Step 2) Applying the resin varnish to the support and drying, and manufacturing the sealing layer with the subsequent sheet

Step 3) After laminating the film for the film layer and the back sheet for the sealing layer, removing the support for the sealing layer and the sheet, and manufacturing the partially hardened double layer and then the sheet

Step 4) A step of laminating the partially cured double layer and then the sealing layer of the sheet with the resin composition layer on the layer C.

By using a specific thin film layer or a specific sealing layer, it is possible to provide a semiconductor package which can suppress the warpage of the package even if the circuit substrate is thinned.

Form of implementing the invention

According to the present invention, the feature layer has a (layer A) film layer having an elastic modulus of 5 GPa or more and 25 GPa or less. (B layer) The sealing layer (C layer) circuit board layer having an elastic modulus of 0.1 GPa or more and 1 GPa or less, and the thickness of the A layer is 1 to 200 μm, the thickness of the B layer is 100 to 600 μm, and the thickness of the C layer is 1 to 100 μm, the package warp is 235 μm or less of the semiconductor package.

<(A layer) film layer having an elastic modulus of 5 GPa or more and 25 GPa or less>

The layer A of the present invention is used for reducing warpage, and is characterized in that the modulus of elasticity is 5 GPa or more and 25 GPa or less. The A layer refers to the insulating layer obtained by the thermal hardening step. The layer A can be obtained by using a thermosetting resin composition. The thermosetting resin composition may be one suitable for the insulating layer of the semiconductor package, and is not particularly limited, and preferably contains (a) an epoxy resin, and more preferably contains (a) an epoxy resin, b) a hardener, (c) an inorganic filler. Further, a curing accelerator, a thermoplastic resin, rubber particles, a flame retardant, other components, and the like may be added as appropriate.

[(a) Epoxy resin]

The epoxy resin is not particularly limited, and examples thereof include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AF type epoxy resin, phenol novolak type epoxy resin, tert- Butyl catechol type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, naphthalene ether type epoxy resin, glycidyl amine type epoxy resin, cresol novolak type epoxy resin, biphenyl Epoxy resin, linear aliphatic epoxy resin, epoxy resin with butadiene structure, alicyclic epoxy resin, heterocyclic epoxy resin, epoxy containing phosphorus Resin, epoxy resin containing a spiro ring, cyclohexane dimethanol type epoxy resin, trimethylol type epoxy resin, halogenated epoxy resin, and the like. These may be used alone or in combination of two or more.

Among them, bisphenol A type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin, biphenyl type epoxy resin, naphthyl ether are preferred from the viewpoints of improving heat resistance, improving insulation reliability, and improving fluidity. Epoxy resin, epoxy resin with butadiene structure. Specifically, bisphenol A type epoxy resin ("Jeep 828EL" and "YL980" manufactured by Mitsubishi Chemical Corporation), bisphenol F type epoxy resin ("JER806H" and "YL983U" manufactured by Mitsubishi Chemical Corporation) ), a naphthalene type bifunctional epoxy resin ("HP4032", "HP4032D", "HP4032SS" manufactured by DIC), a naphthalene type 4-functional epoxy resin ("HP4700" and "HP4710" manufactured by DIC) Naphthol type epoxy resin ("ESN-475V" manufactured by Nippon Steel Chemical Co., Ltd.), epoxy resin having a butadiene structure ("PB-3600" manufactured by Taischer Chemical Co., Ltd.), and Epoxy resin of benzene structure ("NC3000H", "NC3000L", "NC3100" made by Nippon Kayaku Co., Ltd., "YX4000", "YX4000H", "YX4000HK", "YL6121" manufactured by Mitsubishi Chemical Corporation) Type epoxy resin (Mitsubishi Chemical Co., Ltd. "YX8800"), naphthalene ether type epoxy resin (EXA-7310, "EXA-7311", "EXA-7311L", "EXA7311-G3" made by DIC Corporation Phosphorus-containing epoxy resin ("FX289", "FX305", "TX0712" manufactured by Nippon Steel Chemical Co., Ltd., "YL7613" manufactured by Mitsubishi Chemical Corporation).

Epoxy resins may be used in combination of two or more kinds, but preferably have one molecule. Epoxy resin of two or more epoxy groups. Further, a more preferable aspect is an epoxy resin having two or more epoxy groups in one molecule, a liquid aromatic epoxy resin at a temperature of 20 ° C, and three or more epoxy resins in one molecule. The base is a solid aromatic epoxy resin at a temperature of 20 °C. The aromatic epoxy resin in the present invention refers to an epoxy resin having an aromatic ring structure in its molecule. When the epoxy resin is used in combination with a liquid epoxy resin and a solid epoxy resin, and the resin composition is used in the form of a film, it has moderate flexibility and a cured product of a resin composition has a moderate breaking strength. The addition ratio (liquid epoxy resin: solid epoxy resin) is preferably a mass ratio of 1:0.1 to 2, more preferably 1:0.3 to 1.8, still more preferably 1:0.6 to 1.5.

In the thermosetting resin composition used in the present invention, the epoxy resin content is 100% by mass in terms of the mechanical strength and water resistance of the cured product of the resin composition. It is preferably from 3 to 40% by mass, more preferably from 5 to 35% by mass, still more preferably from 10 to 30% by mass.

[(b) Hardener]

(b) The curing agent is not particularly limited, and examples thereof include a phenol-based curing agent, a naphthol-based curing agent, an active ester-based curing agent, a benzoxazine-based curing agent, a cyanate ester-based curing agent, and an acid anhydride-based curing agent. A phenol-based curing agent, a naphthol-based curing agent, and an active ester-based curing agent are preferable. These may be used alone or in combination of two or more.

The phenol-based curing agent and the naphthol-based curing agent are not particularly limited, and examples thereof include a phenol-based curing agent having a novolac structure and a naphthol having a novolak structure. a hardener, preferably a phenol novolak resin, a phenol novolac resin containing a triazine skeleton, a naphthol novolak resin, a naphthol aralkyl type resin, a naphthol resin containing a triazine skeleton, a biphenyl aralkyl group Type phenol resin. Commercially available products such as "MEH-7700", "MEH-7810", "MEH-7851", "MEH7851-4H" (Mingwa Chemical Co., Ltd.) and "GPH" (biphenyl aralkyl type phenol resin) Nippon Chemical Co., Ltd., "NNH", "CBN" (made by Nippon Chemical Co., Ltd.), "SN170", "SN180", "SN190" of naphthol aralkyl resin "TD475" ("DIC"), "SN475", "SN485", "SN495", "SN395", "SN375" (Nippon Steel Chemical Co., Ltd., phenol novolac resin) The phenol novolac resin "LA3018", "LA7052", "LA7054", "LA1356" (manufactured by DIC), etc., may be used alone or in combination of two or more.

The active ester-based curing agent is not particularly limited, and it is generally preferred to use two phenolic esters, thiophenol esters, N-hydroxylamine esters, and esters of a heterocyclic hydroxy compound to have two upper reactivity. Ester-based compound. The active ester-based curing agent is preferably obtained by a condensation reaction of a carboxylic acid compound and/or a sulfuric acid compound with a hydroxy compound and/or a thiol compound. In particular, from the viewpoint of improving heat resistance, an active ester-based curing agent derived from a carboxylic acid compound and a hydroxy compound is preferred, and an active ester system derived from a carboxylic acid compound and a phenol compound and/or a naphthol compound is more preferred. hardener. Carboxylic acid compounds such as benzoic acid, acetic acid, succinic acid, maleic acid, itaconic acid, citric acid, isophthalic acid, terephthalic acid, pyromellitic acid and the like. Phenol compound or naphthalene Phenolic compounds such as hydroquinone, resorcinol, bisphenol A, bisphenol F, bisphenol S, phenol porphyrin, methylated bisphenol A, methylated bisphenol F, methylated bisphenol S, phenol, O-cresol, m-cresol, p-cresol, catechol, α-naphthol, β-naphthol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,6-di Hydroxynaphthalene, dihydroxybenzophenone, trihydroxybenzophenone, tetrahydroxybenzophenone, phloroglucinol, benzotrione, dicyclopentadienyl diphenol, phenol novolac, and the like. One or two or more kinds of the active ester-based curing agents can be used. Further, as the active ester-based curing agent, an active ester-based curing agent disclosed in JP-A-2004-277460 can be used, and a commercially available product can also be used. The commercially available active ester-based curing agent preferably contains a dicyclopentadienyl diphenol structure, an acetonitrile compound of a phenol novolak, a benzoquinone compound of a phenol novolak, and the like, and more preferably contains a dicyclopentane. A structure of a dienyl diphenol structure. Specifically, the structure containing a dicyclopentadienyl diphenol structure, such as EXB9451, EXB9460, EXB9460S-65T, HPC-8000-65T (manufactured by DIC, having an active base equivalent of about 223), and bismuth phenol novolac acetate For example, DC808 (Mitsubishi Chemical Co., Ltd., active base equivalent: about 149), phenol novolac benzoate such as YLH1026 (Mitsubishi Chemical Co., Ltd., active base equivalent of about 200), YLH1030 (Mitsubishi Chemical Co., Ltd., The active base equivalent is about 201), YLH1048 (manufactured by Mitsubishi Chemical Corporation, active base equivalent: about 245), and the like, and EXB9460S is preferable from the viewpoint of storage stability of the paint and thermal expansion rate of the cured product.

The active ester-based hardener having a dicyclopentadienyl diphenol structure is more specifically a compound of the following formula (1).

(wherein R is a phenyl group or a naphthyl group, k is 0 or 1, and n is 0.05 to 2.5 of the average value of the repeated unit).

From the viewpoint of improving heat resistance, R is preferably a naphthyl group, and k is preferably 0, and n is preferably 0.25 to 1.5.

The benzoxazine-based curing agent is not particularly limited, and specific examples thereof include F-a, P-d (manufactured by Shikoku Chemical Co., Ltd.), and HFB2006M (manufactured by Showa Polymer Co., Ltd.).

The cyanate ester-based curing agent is not particularly limited, and examples thereof include a novolac type (phenol novolak type, an alkylphenol novolak type, etc.) cyanate ester type curing agent and a dicyclopentadiene type cyanate ester type curing agent. A bisphenol type (bisphenol A type, bisphenol F type, bisphenol S type, etc.) cyanate ester type curing agent, and a partially pretreated triazine-based prepolymer. The weight average molecular weight of the cyanate ester-based curing agent is not particularly limited, and is preferably from 500 to 4,500, more preferably from 600 to 3,000. Specific examples of the cyanate ester-based hardener are, for example, bisphenol A dicyanate, polyphenol cyanate (low (3-extended methyl-1,5-phenylene), 4,4'- Methyl bis(2,6-dimethylphenyl cyanate), 4,4'-ethylene diphenyl dicyanate, hexafluorobisphenol A dicyanate, 2,2-double (4-cyanate) phenylpropane, 1,1-bis(4-cyanate phenylmethane), bis(4-cyanate-3,5-dimethylphenyl)methane, 1,3 - bis(4-cyanate phenyl-1-(methylethylidene)) benzene, bis(4-cyanate phenyl) sulfide, bis(4-cyanate phenyl) ether, etc. Functional cyanate resin, phenol novolac, cresol novolac, containing two A polyfunctional cyanate resin derived from a phenol resin such as a cyclopentadiene structure, or a prepolymer which is partially triazineized. These may be used alone or in combination of two or more. The commercially available cyanate ester resin is a phenol novolac type polyfunctional cyanate ester resin represented by the following formula (2) (manufactured by Takaraza Nippon Co., Ltd., PT30, cyanate equivalent 124), and the following formula (3) A part or all of the bisphenol A dicyanate represented by the triazine is a prepolymer of a trimer (manufactured by Takaraza Nippon Co., Ltd., BA230, cyanate equivalent 232), A cyanate ester resin (manufactured by Takaraza Co., Ltd., DT-4000, DT-7000) containing a dicyclopentadiene structure represented by the formula (4).

[wherein n is an arbitrary number of average values (preferably 0 to 20)].

(where n is the average of 0 to 5).

The acid anhydride-based curing agent is not particularly limited, and examples thereof include phthalic anhydride, tetrahydrofurfuric anhydride, hexahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methyl hexahydrophthalic anhydride, methyl dianhydride, hydrogenated methyl dianhydride, and trialkyl group. Tetrahydrophthalic anhydride, dodecenyl succinic anhydride, 5-(2,5-dicarbonyltetrahydro-3-furanyl)-3-methyl-3-cyclohexene-1,2-dicarboxylic anhydride, trimellitic anhydride , pyromellitic anhydride, benzophenone tetracarboxylic dianhydride, biphenyl tetracarboxylic dianhydride, naphthalene tetracarboxylic dianhydride, oxydicarboxylic acid dianhydride, 3,3', 4,4'-two Phenylhydrazine tetracarboxylic dianhydride-1,3,3a,4,5,9b-hexahydro-5-(tetrahydro-2,5-dicarbonyl-3-furanyl)benzo[1,2-C a polymer type acid anhydride such as a styrene-maleic acid resin obtained by copolymerizing furan-1,3-dione, ethylene glycol bis(dehydrated trimellitic acid), styrene and maleic acid.

In the resin composition used in the present invention, in view of improving the mechanical strength and water resistance of the cured product of the resin composition, (a) the epoxy group of the epoxy resin is combined, and (b) the reactive group of the hardener is combined. The ratio of the number is preferably from 1:0.2 to 2, more preferably from 1:0.3 to 1.5, still more preferably from 1:0.4 to 1. The epoxy group count of the epoxy resin present in the resin composition means the total value of the solid content of each epoxy resin in the epoxy resin divided by the epoxy equivalent, and the reaction of the hardener Base count The value obtained by dividing the solid content of each hardener in the hardener of the portion by the value obtained by dividing the equivalent of the reaction group.

[(c) Inorganic filler]

(c) The inorganic filler is not particularly limited, and examples thereof include cerium oxide, aluminum oxide, barium sulfate, talc, clay, mica powder, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, magnesium oxide, boron nitride, and boric acid. Aluminum, barium titanate, barium titanate, calcium titanate, magnesium titanate, barium titanate, titanium oxide, barium zirconate, calcium zirconate, and the like. Among them, cerium oxide is preferred. Further, it is amorphous cerium oxide, pulverized cerium oxide, molten cerium oxide, crystalline cerium oxide, synthetic cerium oxide, hollow cerium oxide or the like, and more preferably molten cerium oxide. Further, the cerium oxide is preferably a spherical body. These may be used alone or in combination of two or more.

The average particle diameter of the inorganic filler is not particularly limited, and the average particle diameter of the inorganic filler is limited to a semiconductor package having a narrow steel wire spacing, and the viewpoint is that the inorganic filler particles are prevented from being generated when the steel wire contacts the steel wire. It is preferably 20 μm or less, more preferably 10 μm or less, and still more preferably 5 μm or less. When the epoxy resin composition is used as a resin composition paint, the lower limit of the average particle diameter of the inorganic filler is preferably 0.01 μm or more and 0.03 μm from the viewpoint of preventing the viscosity of the paint from rising and the handleability from being lowered. The above is preferable, more preferably 0.05 μm or more, particularly preferably 0.07 μm or more, and most preferably 0.1 μm or more. The average particle diameter of the above inorganic filler can be measured by a laser diffraction-scattering method based on the Mie scattering theory. Specifically, after the laser diffraction scattering particle size distribution measuring device is measured, the inorganic filler is prepared on a volume basis. The particle size distribution is further determined by the equal diameter of the average particle diameter. The measurement sample is preferably used, and the inorganic filler is dispersed in water by ultrasonic waves. As the laser diffraction scattering type particle size distribution measuring apparatus, LA-500, 750, 950, etc., manufactured by Horiba, Ltd., can be used.

When the content of the inorganic filler to be added is 100% by mass based on the nonvolatile content in the resin composition, it may vary depending on the characteristics required for the resin composition, but is preferably 20 to 85% by mass and 30 to 80. The mass % is preferably, more preferably 40 to 75% by mass, particularly preferably 50 to 70% by mass. When the content of the inorganic filler is too small, the thermal expansion coefficient of the cured product tends to increase, and when the content is too large, the cured product tends to be embrittled.

The inorganic filler may be an epoxy decene coupling agent, an amine decane coupling agent, a mercapto decane coupling agent, a decane coupling agent, an organic decazane compound, or a titanic acid, within the range not inhibiting the effects of the present invention. A surface treatment agent such as an ester coupling agent is subjected to surface treatment. These may be used alone or in combination of two or more. Specific surface treatment agents such as aminopropyl methoxy decane, aminopropyl triethoxy decane, ureidopropyl triethoxy decane, N-phenyl-3-aminopropyl trimethoxy Amino decane coupling agent such as decane, N-2 (aminoethyl)aminopropyltrimethoxydecane, glycidoxypropyltrimethoxydecane, glycidoxypropyltriethoxy Epoxy decane such as decane, glycidoxypropylmethyldiethoxy decane, propylene propyl trimethoxy decane, (3,4-epoxycyclohexyl)ethyltrimethoxy decane a coupling agent, a mercapto decane coupling agent such as mercaptopropyltrimethoxydecane or mercaptopropyltriethoxydecane, methyltrimethoxydecane, octadecyltrimethoxydecane, phenyltrimethoxydecane, Methacryloxypropyltrimethoxy a decane coupling agent such as decane, imidazolium or triazine decane, hexamethyldioxane, hexaphenyldioxane, triazane, cyclotriazane, 1,1,3,3, Organic sulfonium compound such as 5,5-hexamethylcyclotriazane, butyl titanate dimer, titanium octane glycolate, diisopropoxy titanium bis(triethanol valerate) , dihydroxy titanium dilactate, dihydroxy bis(ammonium lactate) titanium ruthenium, bis(dioctylhydrogen phosphate) extended ethyl phthalate, bis(dioctylhydrophosphate) oxyacetic acid Ester titanate, tri-n-butoxy titanium monostearate, tetra-n-butyl titanate, tetrakis(2-ethylhexyl) titanate, tetraisopropyl bis(dioctyl) Phosphite) titanate, tetraoctyl bis (bistridecyl phosphite) titanate, tetrakis(2,2-diallyloxymethyl-1-butyl) bis (bistridecyl) Phosphite titanate, isopropyl trioctanate titanate, isopropyl tricumylphenyl titanate, isopropyl triisostearyl strontium titanate, isopropyl isostearyl bismuth Propylene titanate, isopropyl dimethyl propylene isostearyl decyl titanate, isopropyl tris(dioctyl phosphate) titanate, isopropyl March Benzenesulfonamide acyl titanate, isopropyl tri (dioctyl hydrogen phosphate) titanate, isopropyl tri (N- acyl-aminoethyl - aminoethyl) titanate coupling agents.

[(d) hardening accelerator]

(d) The curing accelerator is not particularly limited, and examples thereof include an amine-based curing accelerator, a pulse-hardening accelerator, an imidazole-based curing accelerator, an lanthanum-based curing accelerator, and a metal-based curing accelerator. These may be used alone or in combination of two or more.

The amine-based hardening accelerator is not particularly limited, and examples thereof include a trialkylamine such as triethylamine or tributylamine, 4-dimethylaminopyridine, and benzyldimethylamine. An amine compound such as 2,4,6-tris(dimethylaminomethyl)phenol or 1,8-diazabicyclo(5,4,0)-undecene (hereinafter abbreviated as DBU). These may be used alone or in combination of two or more.

The pulse hardening accelerator is not particularly limited, and examples thereof include dicyandiamide, 1-methyl pulse, 1-ethyl pulse, 1-cyclohexyl pulse, 1-phenyl pulse, 1-(o-methylphenyl) pulse. , dimethyl pulse, diphenyl pulse, trimethyl pulse, tetramethyl pulse, pentamethyl pulse, 1,5,7-triazabicyclo[4.4.0]non-5-ene, 7- Methyl-1,5,7-triazabicyclo[4.4.0]non-5-ene, 1-methyl bis-nine, 1-ethyl bis-nine, 1-n-butyl bis-vein , 1-n-octadecyl double vein, 1,1-dimethyl double vein, 1,1-diethyl double vein, 1-cyclohexyl double vein, 1-allyl double vein , 1-phenyl double condensed veins, 1-(o-tolyl) double veins, and the like. These may be used alone or in combination of two or more.

The imidazole-based hardening accelerator is not particularly limited, and examples thereof include 2-methylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 1,2-dimethylimidazole, and 2-ethyl-4-methylimidazole. 1,2-dimethylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1-benzyl-2-methylimidazole, 1- Benzyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-undecylimidazole, 1-cyanoethyl-2-ethyl-4- Methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-undecylimidin trimellitate, 1-cyanoethyl-2-phenylimidazolium Trimellitic acid ester, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[ 2'-undecyl imidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1 ')]-Ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine trimeric isocyanate Adult, 2-phenyl Imidazole trimeric isocyanate adduct, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,3-dihydro-1H- Imidazole compound of pyrrolo[1,2-a]benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline, 2-phenylimidazoline, etc. And an adduct of an imidazole compound and an epoxy resin. These may be used alone or in combination of two or more.

The oxime-based hardening accelerator is not particularly limited, and examples thereof include triphenylphosphine, strontium borate compound, tetraphenylphosphonium tetraphenylborate, n-butylphosphonium tetraphenylborate, tetrabutyl decanoate, (4-methylphenyl)triphenylphosphonium thiocyanate, tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate, and the like. These may be used alone or in combination of two or more.

In the thermosetting resin composition used in the present invention, the content of the curing accelerator (excluding the metal-based curing accelerator) is preferably 0.005 to 1% by mass based on 100% by mass of the nonvolatile content in the resin composition. More preferably, it is 0.01 to 0.5% by weight. When it is less than 0.005% by mass, the curing tends to be slowed down and the thermal curing time is required to be elongated. When the amount is more than 1% by mass, the storage stability of the resin composition tends to be lowered.

The metal-based hardening accelerator is not particularly limited, and is, for example, an organometallic complex or an organic metal salt of a metal such as cobalt, copper, zinc, iron, nickel, manganese or tin. Specific examples of the organometallic complex include, for example, an organic cobalt complex such as cobalt (II) acetoacetate, cobalt (III) acetoacetate, or copper (II) acetylpyruvate. Compound, an organic zinc complex such as zinc (II) acetoacetate, an organic iron complex such as iron (III) acetoacetate, or an organic nickel such as nickel (II) acetoacetate A complex compound, an organic manganese complex such as manganese (II) acetoacetate or the like. Organometallic salts such as zinc octoate , zinc zincate, zinc naphthenate, cobalt naphthenate, tin stearate, zinc stearate, and the like. These may be used alone or in combination of two or more.

In the thermosetting resin composition used in the present invention, when the amount of the metal-based curing accelerator added is 100% by mass based on the non-volatile content in the resin composition, the metal content of the metal-based curing catalyst is preferably 25 Up to 500 ppm, more preferably 40 to 200 ppm. When the amount is less than 25 ppm, the resin composition tends to be insufficient in curability, and when it exceeds 500 ppm, the storage stability and insulation properties of the resin composition tend to be lowered.

[(e) Thermoplastic Resin]

(e) Thermoplastic resins such as phenoxy resin, polyimine resin, polyamidimide resin, polyether quinone resin, polyfluorene resin, polyether oxime resin, polyphenylene ether resin, poly Carbonate resin, polyether ether ketone resin, polyester resin. These thermoplastic resins may be used alone or in combination of two or more. The weight average molecular weight of the thermoplastic resin is preferably from 5,000 to 200,000. When the amount is less than the above range, the effect of improving the film forming ability and the mechanical strength is not sufficiently exhibited. When the amount is more than this range, the compatibility with the resin composition tends to be insufficient. Further, the weight average molecular weight of the present invention is measured by a gel permeation chromatography (GPC) method (in terms of polystyrene). The weight average molecular weight by the GPC method is specifically determined by using the LC-9A/RID-6A manufactured by Shimadzu Corporation, and the pipe column is Shodex K-800P/K-804L/K-804L manufactured by Showa Denko Co., Ltd. The mobile phase was measured using a chloroform or the like at a column temperature of 40 ° C and then using a calibration curve of standard polystyrene.

Specific examples of the phenoxy resin include FX280, FX293, ERF001, and Mitsubishi Chemical Corporation's YX8100, YL6954, YL6974, YL7213, YL6794, YL7553, and YL7482. The polyvinyl acetal resin is a polyvinyl butyral resin, and the polyvinyl acetal resin is specifically, for example, an electroformed butyral 4000-2, 5000-A, 6000-C, 6000 manufactured by the electric chemical industry. -EP, Sekisui Chemical Industry Co., Ltd., JES Ray BH series, BX series, KS series, BL series, BM series, etc. Specific examples of the polyimine are the poly-imines "Rikak SN20" and "Ricek PN20" manufactured by Nippori Chemical Co., Ltd. In addition, a linear polyimine obtained by reacting a bifunctional hydroxyl-terminated polybutadiene, a diisocyanate compound, and a tetrabasic acid anhydride (the one described in JP-A-2006-37083) contains a polyoxane skeleton. Poly-imine which is modified by polyimine (such as those described in JP-A-2002-12667, JP-A-2000-319386, etc.). Specific examples of the polyamidoximine are, for example, the polyamidoquinone imines "Bellman HR11NN" and "Bellman HR16NN" manufactured by Toyobo Co., Ltd. In addition, modified polyamidoquinone imines such as polyacrylamide skeletons "KS9100" and "KS9300" which are made of a polyoxyalkylene skeleton manufactured by Hitachi Chemical Co., Ltd. Specific examples of the polyether oxime include, for example, polyether oxime "PES5003P" manufactured by Sumitomo Chemical Co., Ltd. For example, the "P1700" and "P3500" are organized by Sobanman.

When the (e) thermoplastic resin is added to the thermosetting resin composition used in the present invention, the content of the thermoplastic resin in the resin composition is not particularly limited, but is preferably 100% by mass based on the nonvolatile content in the resin composition. It is from 0.1 to 30% by mass, more preferably from 1 to 10% by mass. Thermoplastic resin When the content is too small, the film forming ability and the mechanical strength are not promoted. When too much, the melt viscosity of the resin composition is increased, and when the semiconductor package has protrusions or the like and narrows the filling field, it may be unfilled. When a void occurs, or when the wire gap is narrow, a problem such as a wire flow mark may occur.

[(f) rubber particles]

(f) The rubber particles are, for example, those which are not dissolved in an organic solvent used in the preparation of the varnish of the resin composition, and which are not compatible with an epoxy resin or the like. Therefore, the rubber particles are present in a dispersed state in the paint of the resin composition of the present invention. Such rubber particles generally have a molecular weight of a rubber component so as not to be dissolved in an organic solvent or a resin, and are in the form of particles.

The rubber particles used in the thermosetting resin composition are preferably core-shell type rubber particles, cross-linked acrylic rubber butadiene rubber particles, crosslinked styrene butadiene rubber particles, acrylic rubber particles or the like. The core-shell type rubber particles are rubber particles having a core layer and a shell layer. For example, the shell layer of the outer layer is composed of a glassy polymer, and the core layer of the inner layer is a two-layer structure composed of a rubbery polymer, or The shell layer of the outer layer is composed of a glassy polymer, the intermediate layer is composed of a rubber-like polymer, and the core layer is a three-layer structure composed of a glassy polymer. The glassy polymer layer is composed of, for example, a polymer of methyl methacrylate, and the rubbery polymer layer is composed of, for example, a butyl acrylate polymer (butyl acrylate rubber). Two or more types of rubber particles can be used in combination. Specific examples of the core-shell type rubber particles are, for example, Stauffen AC3832, AC3816N, IM-401 changed 1, IM-401 changed 7-17 (trade name, Gan Zihua Cheng (share) system, Medap KW-4426 (trade name, Mitsubishi Rayon (stock) system). Specific examples of the crosslinked acrylonitrile butadiene rubber (NBR) particles include XER-91 (average particle diameter: 0.5 μm, manufactured by JSR Co., Ltd.). Specific examples of the crosslinked styrene butadiene rubber (SBR) particles include XSK-500 (average particle diameter: 0.5 μm, manufactured by JSR Co., Ltd.). Specific examples of the acrylic rubber particles are, for example, Medap W300A (average particle diameter: 0.1 μm) and W450A (average particle diameter: 0.2 μm) (manufactured by Mitsubishi Rayon Co., Ltd.).

The average particle diameter of the rubber particles to be added is preferably in the range of 0.005 to 1 μm, more preferably in the range of 0.2 to 0.6 μm. The average particle diameter of the rubber particles used in the present invention can be measured by a dynamic light scattering method. For example, the rubber particles are uniformly dispersed in a suitable organic solvent by ultrasonic waves or the like, and then measured by a thick particle size analyzer (FPAR-1000, manufactured by Otsuka Electronics Co., Ltd.), and the particle size distribution of the rubber particles is produced on a mass basis. The average diameter is the average particle diameter.

The content of the rubber particles is preferably from 1 to 10% by mass, more preferably from 2 to 5% by mass, based on 100% by mass of the nonvolatile matter in the resin composition.

[(g) flame retardant]

(g) a flame retardant such as an organic phosphorus-based flame retardant, an organic nitrogen-containing phosphorus compound, a nitrogen compound, a polyoxygenated flame retardant, a metal hydroxide or the like. Organophosphorus-based flame retardants such as phenanthroline compounds such as HCA, HCA-HQ, and HCA-NQ manufactured by Sanguang Co., Ltd., and benzoxazines containing phosphorus such as HFB-2006M manufactured by Showa Polymer Co., Ltd. Compound, Ajinomoto Jing Technology (share), Leofo 30, 50, 65, 90, 110, TPP, RPD, BAPP, CPD, TCP, TXP, TBP, TOP, KP140, TIBP, TPPO, PPQ made by Beixing Chemical Industry Co., Ltd., OP930 made by Kurari Co., Ltd., PX200 made by Da Ba Chemical Co., Ltd. The organic phosphorus-containing compound such as SP670 and SP703 manufactured by Shikoku Chemicals Co., Ltd., SPB100, SPE100 manufactured by Otsuka Chemical Co., Ltd., and FP manufactured by Fushimi Pharmaceutical Co., Ltd. a phosphonazine compound such as -series. Metal hydroxides such as UD65, UD650, UD653, etc. made by Ube Manduri Co., Ltd., B-30, B-325, B-315, B-308, manufactured by Ba Industrial Co., Ltd. B-303, UFH-20, etc., such as aluminum hydroxide.

[Other ingredients]

The resin composition used in the present invention may be added to other components as necessary within the range which does not impair the effects of the present invention. Other components such as a vinyl benzyl ester compound, an acrylic acid compound, a maleic imide compound, a thermosetting resin such as a blocked isocyanate compound, an organic filler such as a cerium powder, a nylon powder, or a fluorine powder, a binder, and a pantone. Adhesive imparting agent such as tackifier, polyfluorene-based, fluorine-based or polymer-based antifoaming agent or coating agent, imidazole-based, thiazole-based, triazole-based, decane-based coupling agent, etc., phthalocyanine A flaky fiber substrate such as a blue color, a phthalocyanine edge, an iodine green, a diazo yellow, a carbon black or the like, a glass woven fabric, a glass non-woven fabric, or an organic fiber.

The method for preparing the thermosetting resin composition of the layer A of the present invention is not particularly limited, and for example, a method of mixing the above-mentioned additive component and a solvent to be added, etc., using a rotary mixer or the like is used.

[Method of manufacturing layer A]

The layer A of the present invention refers to an insulating layer obtained by thermally hardening a thermosetting resin composition. In order to form the insulating layer, the thermosetting resin composition is a film paste for a film layer, a film for a film layer, and a film for a film layer. The manufacturing method of the A layer of the aspect is as follows.

(Method for Producing Resin Paste for Film Layer)

The thermosetting resin composition is dissolved in an organic solvent to produce a resin paste. The resin paste was directly coated and dried on the layer B to form a resin composition layer for the film layer. Thereafter, the layer A can be formed by thermal hardening. The thermosetting resin composition can be a resin composition having a low viscosity and can be directly used as a resin paste.

(Manufacturing method of the film for the film layer)

After dissolving the thermosetting resin composition in an organic solvent to prepare a resin varnish, the resin varnish is applied onto a support using a device such as a bar coater or a die coater, and dried by heating or blowing hot air or the like. An organic solvent is used to form a resin composition layer for a film layer on a support to produce a back sheet. Thereafter, the layer A is formed by thermally hardening the sheet. Further, the sheet-like fibrous base material is impregnated with a resin varnish, and after drying, a resin composition layer for a film layer can be formed on the support.

(Method for Producing Hardened Sheet for Film Layer)

Moreover, the adhesive sheet produced by the above method is thermally hardened to form a non-instrument A hardened piece of fluidity. Thereafter, the layer A can be formed by thermally hardening the cured sheet.

An organic solvent for preparing a resin paste or a resin varnish, such as acetone, methyl ethyl ketone, cyclohexanone or the like, ethyl acetate, butyl acetate, cellosolve acetate, propylene glycol monomethyl ether Acetate such as acid ester or carbitol acetate, cellosolve, carbitol such as butyl carbitol, aromatic hydrocarbon such as toluene or xylene, dimethylformamide, and dimethyl A guanamine-based solvent such as acetamide or N-methylpyrrolidone. Two or more types of organic solvents can be used in combination.

The support for the production of the adhesive sheet is a polyolefin film such as polyethylene, polypropylene or polyvinyl chloride, polyethylene terephthalate (hereinafter abbreviated as "PET"), polyethylene naphthalate. Various plastic films such as polyester film, polycarbonate film, and polyimide film. Further, a metal foil such as a release paper, a copper foil, or an aluminum foil can be used. The support and the protective film described later can be subjected to surface treatment such as matte treatment or corona treatment. Further, the mold release agent such as a polyoxyxylene resin release agent, an alkyd resin release agent, or a fluorine resin release agent may be subjected to a release treatment. The thickness of the support is not particularly limited, and is preferably from 10 to 150 μm, more preferably from 25 to 50 μm.

Next, the protective film is laminated on the surface of the sheet which is not closely adhered to the support. The thickness of the protective film is not particularly limited and is, for example, 1 to 40 μm. By laminating the protective film, it is possible to prevent the surface of the resin layer layer for the film layer from being attached to the surface of the resin layer. The sheet can then be rolled into a roll for storage.

The drying conditions in the case of producing a sheet are not particularly limited, and can be dried until the content of the organic solvent in the resin composition for a film layer is 10% by mass or less. Preferably, it is 5 mass% or less. The amount of the organic solvent in the varnish varies depending on the boiling point of the organic solvent. For example, the lacquer containing 30 to 60% by mass of the organic solvent is dried at 50 to 150 ° C for 3 to 10 minutes to form a resin composition layer for the film layer.

When a cured sheet for a film layer is used, the cured sheet does not need to be completely thermally cured, and may have a degree of hardening which exhibits the effects of the present invention, and does not have substantial fluidity. The non-fluidity means that, for example, a 12 cm × 15 cm hardened piece is vacuum-attracted to a 20 cm square, 0.8 mm thick FR4 substrate at a temperature of 80 ° C for 30 seconds using a vacuum laminator at a temperature of 80 ° C. Under the condition of a pressure of 7.0 kgf/cm ² , the pressure was applied under heat-resistant rubber for 60 seconds, and after lamination, the pressure was applied to the atmosphere at a pressure of 80 ° C and a pressure of 5.5 kgf/cm ² for 90 seconds. The maximum bleed length of the film layer is measured at the same time, and the maximum bleed length is 0.3 mm or less, preferably 0.2 mm or less, more preferably 0.1 mm or less, and even more preferably 0 Å. The heat hardening conditions are, for example, a hardening temperature of 150 to 200 ° C and a hardening time of 1 to 10 minutes.

[A layer evaluation]

In order to reduce the warpage of the package at the time of mounting, the glass transition temperature of the layer A of the present invention is preferably 80 ° C or more, more preferably 90 ° C or more, still more preferably 100 ° C or more. Further, the upper limit of the glass transition temperature is not particularly limited, and from the viewpoint of practical use, it is preferably 300 ° C or lower, more preferably 280 ° C or lower.

The term "glass transition temperature" means a value indicating heat resistance, and can be determined according to the method described in JIS K 7179. Specifically, it can be measured by thermomechanical analysis (TMA) or dynamic mechanical analysis (DMA). Thermomechanical analysis (TMA), such as TMA-SS6100 (Seikometer), TMA- 8310 (Rikaku (share) system) and so on. Dynamic mechanical analysis (DMA), for example, DMS-6100 (Seikometer). Further, when the glass transition temperature is higher than the decomposition temperature and the glass transition temperature cannot be actually observed, the decomposition temperature can be regarded as the glass transition temperature of the present invention. The decomposition temperature is defined by the temperature at which the mass reduction rate when measured by the method described in JIS K 7120 is 5%.

The thickness of the layer A of the present invention is preferably 1 μm or more, more preferably 3 μm or more, more preferably 5 μm or more, and more preferably 10 μm or more, from the viewpoint of imparting sufficient rigidity and improving the effect of preventing warpage of the package. Preferably, it is preferably 15 μm or more, and most preferably 20 μm or more. In view of the reduction in the thickness of the semiconductor package and the effect of preventing the warpage of the package, it is preferably 200 μm or less, more preferably 150 μm or less, still more preferably 100 μm or less, and even more preferably 90 μm or less. It is preferably 80 μm or less, more preferably 70 μm or less, still more preferably 60 μm or less, particularly preferably 50 μm or less, and most preferably 40 μm or less.

In order to reduce package warpage during mounting, the average thermal expansion coefficient of the layer A of the present invention is preferably 45 ppm or less, more preferably 40 ppm or less, still more preferably 35 ppm or less, and more preferably 30 ppm or less. It is preferably 25 ppm or less, and particularly preferably 20 ppm or less. Further, from the viewpoint of practical use, it is preferably 4 ppm or more, more preferably 5 ppm or more, more preferably 6 ppm or more, still more preferably 7 ppm or more, particularly preferably 8 ppm or more, and most preferably 9 ppm or more.

In order to reduce the warpage of the package at the time of mounting, the elastic modulus of the layer A of the present invention is preferably 5 GPa or more, more preferably 8 GPa or more, still more preferably 10 GPa or more, and particularly preferably 12 GPa or more. Also improve the substrate machinability after packaging The viewpoint is preferably 25 GPa or less, more preferably 20 GPa or less.

<(B layer) sealing layer with an elastic modulus of 0.1 GPa or more and 1 GPa or less>

In order to reduce warpage, the layer B of the present invention is characterized in that the modulus of elasticity is 0.1 GPa or more and 1 GPa or less. The B layer refers to the insulating layer after the thermosetting step. The B layer can be obtained by using a thermosetting resin composition, and can be used as an insulating layer for a semiconductor package, and is not particularly limited. The resin composition used for the layer A described above can be used.

[Manufacturing method of layer B]

The B layer of the present invention refers to an insulating layer obtained by a thermosetting resin composition. In order to form the insulating layer, the layer B can be directly coated with the resin paste of the sealing layer on the layer C, and then dried to form a resin composition for the sealing layer, and then thermally cured by the method of manufacturing the layer A described above. A layer B can be formed. Further, a resin composition layer for a sealing layer can be formed on a support, and after forming a sealing sheet, the B layer can be formed by thermally curing the sealing sheet for the sealing layer.

[B-level evaluation]

The thickness of the layer B is not particularly limited as long as it can fill the semiconductor element. From the viewpoint of sufficiently filling the semiconductor element, it is preferably 100 μm or more, more preferably 150 μm or more, and still more preferably 200 μm or more. Further, from the viewpoint of reducing the thickness of the semiconductor package, it is preferably 600 μm or less, more preferably 500 μm or less, and still more preferably 400 μm or less.

In order to reduce the package warpage and ease stress during installation, the B layer bomb The rate of performance is preferably 1 GPa or less, more preferably 0.8 GPa or less, and still more preferably 0.5 GPa or less. Further, from the viewpoint of securing the lamination property, it is preferably 0.01 GPa or more, more preferably 0.05 GPa or more, and still more preferably 0.1 GPa or more.

The relationship between the elastic modulus of the A layer and the elastic modulus of the B layer reduces the warpage of the package. When the elastic modulus of the A layer is 1, the elastic modulus of the B layer is preferably 0.004 to 0.2, and 0.005 to 0.15 is Preferably, it is preferably from 0.008 to 0.08, particularly preferably from 0.01 to 0.0625.

In order to reduce the package warpage during installation, the average thermal expansion coefficient of the B layer is preferably 200 ppm or less, preferably 180 ppm or less, more preferably 160 ppm or less, and still more preferably 140 ppm or less, and particularly preferably 120. Below ppm. Further, the practical viewpoint is preferably 4 ppm or more, more preferably 30 ppm or more, still more preferably 50 ppm or more, and particularly preferably 70 ppm or more.

<(C layer) circuit substrate layer>

The "circuit board layer" of the present invention is not particularly limited, and examples thereof include a glass epoxy substrate, a metal substrate, a polyester substrate, a polyimide substrate, a BT grease substrate, and a thermosetting polyphenylene ether substrate. The thickness of the circuit board layer is preferably 100 μm or less, more preferably 90 μm or less, more preferably 80 μm or less, and particularly preferably 70 μm or less from the viewpoint of miniaturization of the semiconductor package. Further, the viewpoint of reducing the warpage of the package is preferably 10 μm or more, more preferably 20 μm or more, still more preferably 30 μm or more, particularly preferably 40 μm or more, and most preferably 50 μm or more.

The relationship between the thickness of the C layer and the thickness of the A layer reduces the warpage of the package. When the thickness of the C layer is 1, the thickness of the A layer is preferably 0.05 to 3, and It is preferably from 0.05 to 2, more preferably from 0.08 to 1.8, still more preferably from 0.11 to 1.6, particularly preferably from 0.14 to 1.4, most preferably from 0.17 to 1.2.

The relationship between the thickness of the C layer and the thickness of the B layer reduces the viewpoint of the warpage of the package. When the thickness of the C layer is 1, the thickness of the B layer is preferably in the range of 0.05 to 10, and in the range of 0.08 to 9 Preferably, it is preferably in the range of 0.11 to 8, particularly preferably in the range of 0.14 to 7, and most preferably in the range of 0.17 to 6.

<Method of Manufacturing Semiconductor Package>

The method for producing a semiconductor package according to the present invention includes a film layer having an (A layer) elastic modulus of 5 GPa or more and 25 GPa or less, and a (B layer) sealing layer having an elastic modulus of 0.1 GPa or more and 1 GPa or less. In the method of manufacturing a semiconductor package of a circuit board layer, the B layer is a method of packaging a semiconductor element on the C layer.

First, the formation method of the B layer will be described. For example, a method in which a sealing layer is directly coated with a resin paste on a C layer and then dried to form a B layer. Other formation methods are, for example, a method in which a sealing layer is laminated on a C layer with a back sheet to form a B layer.

[Method 1] Sealing layer forming method using resin paste for sealing layer

A resin composition layer for a sealing layer is formed on the circuit board layer by a screen printing step using a resin paste for a sealing layer. When there is no solvent, no drying is required after printing. In another method, a resin composition layer for a sealing layer is formed by a transfer molding step using a resin paste for a sealing layer. After the screen printing step, or after the transfer molding step, it can be carried out under the non-destructive adhesion to the film layer. Heat hardened.

[Method 2] Sealing layer forming method using a sealing sheet for an adhesive sheet

The sealing layer is laminated on the circuit board layer with the adhesive sheet, and a resin composition layer for the sealing layer is formed on the C layer. The support was peeled off after lamination. After the support is peeled off, heat hardening can be performed without impairing adhesion to the film layer.

Next, the formation method of the A layer will be described. A thin film layer is formed on the sealing layer after the sealing layer is formed on the circuit substrate. The film forming layer can be formed in the same manner as the sealing layer. For example, a method in which a film layer is coated with a resin paste on a layer B to form an layer A, and a film layer is laminated on a layer B to form an layer A is used. Further, the film layer may be laminated on the layer B by using a cured sheet obtained by hardening the film layer, and the layer A may be formed.

[Method 3] Method for forming a film layer using a resin paste for a film layer

The resin composition layer for a sealing layer is formed by the method of the above method 1 or method 2. Next, using a resin paste for a film layer, a resin composition layer for a film layer is formed by a screen printing step. When there is no solvent, no drying is required after printing. In another method, a resin composition layer for a film layer is formed by a transfer molding step using a resin paste for a film layer. Thereafter, it is thermally hardened to form a film layer.

[Method 4] Method for forming a film layer using a film for a film layer

The resin composition layer for a sealing layer is formed by the method of the above method 1 or method 2. Next, the film layer is laminated with the back sheet toward the sealing layer, and then thermally cured to form a film layer. The support was peeled off after lamination.

[Method 5] Method for forming a film layer using a cured sheet for a film layer

The resin composition layer for a sealing layer is formed by the above method 1 or method 2. The resin composition layer for a sealing layer preferably has fluidity and packing property which can be adhered to the cured sheet for a film layer when it is not cured. The cured film sheet for the film layer is laminated on the resin composition layer for the sealing layer, and then thermally cured to form a sealing layer and a film layer. The support was peeled off after lamination.

The insulating layer is obtained by forming a sealing layer and a thin film layer by a heat hardening step as described above, and a semiconductor package can be obtained.

Next, a method of forming a sealing layer and a film layer using the double-layered back sheet after the double-layered sheet is obtained by using the back sheet for the first laminated film layer and the back sheet for the sealing layer.

The specific steps are as follows.

Step 1) A step of applying a resin varnish to a support and then drying the film for forming a film layer, or impregnating the flaky fiber substrate with a resin varnish and drying the film for forming a film layer

Step 2) Applying the resin varnish to the support and drying, and manufacturing the sealing layer for the adhesive sheet

Step 3) After laminating the film layer and the back sheet for the sealing layer, removing the support for the sealing layer and the step of manufacturing the double-layered sheet

Step 4) Step of laminating the sealing layer of the double-layered back sheet with the resin composition layer on the C layer

Thereafter, a sealing layer and a thin film layer are formed by a thermosetting step, and after obtaining an insulating layer, a semiconductor package can be obtained. or

Step 1) applying a resin varnish to a support, drying, and thermally hardening to produce a cured sheet for a film layer, or impregnating the sheet-like fibrous substrate with a resin varnish, drying and thermally hardening, and producing a cured product for a film layer. Step of film

Step 2) Applying the resin varnish to the support and drying, and manufacturing the sealing layer for the adhesive sheet

Step 3) After laminating the cured sheet for the film layer and the back sheet for the sealing layer, the support for the adhesive sheet for the sealing layer is removed to produce a partially hardened double-layered sheet.

Step 4) Step of laminating the partially hardened double-layered sealing layer with the resin composition layer on the C layer

Thereafter, a sealing layer and a thin film layer are formed by a thermosetting step, and after obtaining an insulating layer, a semiconductor package can be obtained.

The semiconductor element is disposed on the C layer and packaged in such a manner that the B layer covers the semiconductor element on the C layer. The thickness of the semiconductor element is preferably 300 μm or less, more preferably 250 μm or less, and still more preferably 200 μm or less from the viewpoint of reducing the thickness of the semiconductor package. Moreover, from the viewpoint of sufficiently exerting performance, it is preferably 50 μm or more, and more preferably 100 μm or more.

[Screen printing step]

When the screen printing resin paste is used, the viscosity of the resin paste is preferably from 20 Pa‧S/25 ° C to 40 Pa ‧ S / 25 ° C. In order to suppress the occurrence of voids after screen printing, it is preferred to reduce the heating amount to 5% or less. After printing, the organic solvent is dried at 50 to 150 ° C for 10 to 60 minutes.

[Transfer molding step]

This step is a step of transferring a resin paste into a mold, which is placed on a mold, flows into a resin paste, and is molded at 170 to 190 ° C for 1 to 5 minutes, and is molded and then released from the mold.

[Lamination step]

In this step, the sealing layer is placed on the circuit board so that the resin surface of the sealing layer is laminated on the surface of the semiconductor element toward the circuit board, and the semiconductor element on the circuit board is placed on the circuit board. The elastic material is laminated on the circuit substrate by heating and pressurization. Alternatively, the film layer may be disposed on the resin composition layer or the sealing layer for the sealing layer using the resin layer or the cured layer of the film layer for the adhesive sheet or the film for the cured layer, and the elastic material is interposed under reduced pressure. The step of laminating by heating and pressurization. Under reduced pressure, the air pressure is reduced to an environment below 20 mmHg (26.7 hPa). In the laminating step, heating and pressurization may be performed by pressing a metal plate such as a heated SUS mirror plate from the support side, but when the metal plate cannot be directly pressed, in order to sufficiently make the semiconductor on the circuit substrate The component follows the sealing layer and is pressurized by an elastic material such as heat-resistant rubber. The temperature at the time of pressurization is preferably from 70 to 140 ° C (more preferably from 80 to 130 ° C), and the pressure is preferably from 1 to 11 kgf / cm ² (9.8 × 10 ⁴ to 107.9 × 10 ⁴ N / m ² ). Preferably, it is 10 to 180 seconds (more preferably 20 to 130 seconds). Next, at atmospheric pressure, pressurization can be performed using a SUS mirror plate.

The lamination step can be carried out continuously using a commercially available vacuum laminator. Commercially available vacuum laminating machine, such as a vacuum press laminating machine manufactured by Mingji Manufacturing Co., Ltd. Nikki (stock) vacuum hoist and so on.

[Steps of Thermal Hardening]

This step is a thermal hardening step of thermally curing the resin layer of the sealing layer and the resin composition layer for the film layer to form an insulating layer. The thermosetting condition varies depending on the type of the thermosetting resin composition, etc., but the curing temperature is preferably from 150 to 200 ° C, and the curing time is preferably from 15 to 90 minutes. A thermal hardening step is performed after the screen printing step, the transfer molding step, or the lamination step.

[Steps of peeling the support]

This step is a step of stripping the support from the semiconductor package. When the support is peeled off, it can be peeled off manually or mechanically peeled off using an automatic peeling device. When the support is made of a metal foil, it can be removed by etching with an etching solution. The stripping support is preferably carried out prior to the thermal hardening step.

The thickness of the insulating layer is the total thickness of the film layer and the sealing layer. Therefore, the thickness of the insulating layer is preferably from 101 to 600 μm, more preferably from 105 to 550 μm, still more preferably from 110 to 500 μm. The thickness of the insulating layer can be obtained by measuring a cross-sectional view after hardening using a microscope or the like. Further, the thickness of the resin composition layer for the film layer, the film layer for the film layer, and the resin layer for the sealing layer and the thickness of the sealing layer are substantially the same.

The package warpage value of the semiconductor package after thermal curing is preferably 235 μm or less from the viewpoint of improving the mountability after the thermosetting step, and is preferably 220 μm or less, more preferably 200 μm or less, and further preferably 180 μm or less. More preferably, it is 160 μm or less, particularly preferably 150 μm or less, and 140 μm. The following is particularly preferable, and the optimum is 130 μm or less. Further, the lower limit of the warpage value of the package is preferably lower, and may be 20 μm or less, 10 μm or more, 5 μm or more, 0.1 μm or more, 0 μm or more.

The package warpage value of the semiconductor package after the reflow treatment at a maximum temperature of 260 ° C for 10 seconds or more is preferably 360 μm or less from the viewpoint of improving the mountability with respect to the printed wiring board, and more preferably 330 μm or less. It is 310 μm or less, more preferably 250 μm or less, still more preferably 220 μm or less, particularly preferably 200 μm or less, and most preferably 170 μm or less. Further, the lower limit of the warpage value of the package is preferably lower, and may be 20 μm or more, 10 μm or more, 5 μm or more, 0.1 μm or more, 0 μm or more.

[Examples]

The invention will be specifically described below by way of examples, but the invention is not limited to the examples. In addition, the "parts" described below mean "parts by mass".

[Measurement method and evaluation method]

First, various measurement methods and evaluation methods will be described.

[Measurement of thickness]

The resin composition layer for a film layer and the resin composition layer for a sealing layer used in the examples and the comparative examples were measured using a contact layer thickness meter (MCD-25MJ).

[Measurement and evaluation of package warpage]

After the semiconductor package obtained in the examples and the comparative examples was pelletized to 2.1 cm × 1.6 cm, the package warpage value of the semiconductor package was measured at room temperature. The measurement apparatus was measured using a Chardonnay measurement apparatus (Thermoire AXP: manufactured by Akrometrix) according to JEITA ED-7306 of the Electronic Information Technology Industry Association. Specifically, the hypothesis plane calculated by the least squares method of all the data in the measurement area is used as the reference plane, and the maximum value of the vertical direction of the reference plane is A, and the minimum value is B when |A|+|B Coplanarity is the package warpage value, and is evaluated by the following conditions.

◎: less than 100μm

○: 100 μm or more and less than 150 μm

△: 150 μm or less and less than 240 μm

×: 240 μm or more

[Measurement and evaluation of package warpage after reflow]

The semiconductor package obtained in the examples and the comparative examples was pelletized to 2.1 cm × 1.6 cm, and then subjected to a reflow treatment, and the package warpage value of the semiconductor package was measured at room temperature. The measurement device was a Chardonnay measurement device (Thermoire AXP: manufactured by Akrometrix), and was measured according to JEITA ED-7306 of the Electronic Information Technology Industry Association. Specifically, the hypothesis plane calculated by the least squares method of all the data in the measurement area is used as the reference plane, and the maximum value of the vertical direction of the reference plane is A, and the minimum value is B when |A|+| The value of B| (Coplanarity) is the package warpage value, and is evaluated by the following conditions.

◎: less than 160μm

○: 160 μm or more and less than 260 μm

△: 260 μm or less and less than 365 μm

×: 365 μm or more

[Measurement of average thermal expansion rate and glass transition temperature]

The back sheets obtained in the examples and the comparative examples were heated at 180 ° C for 90 minutes, and after thermal curing, the PET film was peeled off to obtain a sheet-like cured product. The test piece was cut into a test piece having a width of about 5 mm and a length of about 15 mm, and then subjected to thermomechanical analysis by a tensile weighting method using a thermomechanical analyzer TMA-SS6100 (manufactured by Seiko Instruments Co., Ltd.). After the test piece was attached to the above apparatus, the test piece was continuously measured twice under the measurement conditions of a load of 1 g and a temperature increase rate of 5 ° C /min. The average thermal expansion coefficient (ppm) at 25 ° C to 150 ° C was calculated in the second measurement. Further, at the time of the second measurement, the glass transition temperature (° C.) was calculated from the change point of the dimensional change signal inclination.

[Measurement of modulus of elasticity]

The back sheets obtained in the examples and the comparative examples were heated at 180 ° C for 90 minutes, and after thermal curing, the PET film was peeled off to obtain a sheet-like cured product. After the hardened material was cut into test pieces having a width of about 7 mm and a length of about 40 mm, a dynamic mechanical analysis was performed in a tensile mode using a dynamic mechanical analyzer DMS-6100 (manufactured by Seiko Instruments Co., Ltd.). After the test piece was attached to the above apparatus, it was measured under the measurement conditions of a cycle number of 1 Hz and a temperature increase rate of 5 ° C /min. The value of the storage modulus (E') at 25 ° C was read at the time of measurement.

<Manufacturing Example 1>

While stirring a mixture of 31 parts of MEK and 31 parts of cyclohexyl ester, 19 parts of liquid bisphenol A type epoxy resin (epoxy equivalent weight 180, "Yakek 828EL" manufactured by Mitsubishi Chemical Corporation) was thermally dissolved. Forty-part type epoxy resin (epoxy equivalent 163, "HP4700" manufactured by DIC Co., Ltd.) was used. Next, a phenol-based curing agent having a novolak structure ("LA7052" manufactured by DIC Co., Ltd., a MEK solution having a solid content of 60% by weight, a phenolic group equivalent of 120) of 31 parts, and a phenoxy resin (molecular weight of 50,000, Mitsubishi Chemical (" 8 parts of the "E1256" non-volatile content of 40% by weight of MEK solution), 0.1 part of the curing catalyst ("E2MZ" manufactured by Shikoku Chemicals Co., Ltd.), and 320 parts of spherical cerium oxide (SOC2). Further, the resin paint 1 was produced by uniformly dispersing in a high-speed rotary mixer.

<Manufacturing Example 2>

Mixed polyimine resin (40 parts of "T2" made from Ajinomoto Seiki Co., Ltd., diethylene glycol monoethyl ether acetate (hereinafter referred to as EDGAc) of bisphenol A novolac type epoxy resin and Epto left 150 (aromatic hydrocarbon-based mixed solvent, manufactured by Idemitsu Petrochemical Co., Ltd.) mixed paint (solid content: 75% by weight, epoxy equivalent 210, Mitsubishi Chemical Co., Ltd., "157S70" 9.5 parts, phenol phenolic paint Paint resin ("TD2090" manufactured by DIC Co., Ltd., MEK solution with a solid content of 60% by weight, phenolic hydroxyl equivalent of 105) 2.1 parts, and an imidazole derivative ("P200H50" manufactured by Mitsubishi Chemical Co., Ltd.) 0.1 part and spherical shape After 15 parts of cerium oxide (SOC2), it was uniformly dispersed by a high-speed rotary mixer to prepare a resin varnish 2.

<Manufacturing Example 3>

While stirring a mixture of 17 parts of MEK and 17 parts of cyclohexanone, 23.5 parts of a liquid bisphenol A type epoxy resin (epoxy equivalent weight 180, "Jeep 828EL" manufactured by Mitsubishi Chemical Corporation) was heated and dissolved. 20 parts of a tetrafunctional epoxy resin (epoxy equivalent 163, "HP4700" manufactured by DIC Co., Ltd.). Next, a phenol-based curing agent having a novolac structure ("LA7054" manufactured by DIC Co., Ltd., a MEK solution having a solid content of 60% by weight, a phenolic hydroxyl equivalent of 125) of 31 parts, and a phenoxy resin (molecular weight of 50,000, Mitsubishi Chemical ( 20 parts of a 40% by weight MEK solution of a non-volatile component of "E1256", 0.15 parts of a hardening catalyst ("2E4MZ" manufactured by Shikoku Chemicals Co., Ltd.), and 50 parts of spherical cerium oxide (SOC2). The resin paint 3 was produced by uniformly dispersing in a high-speed rotary mixer.

<Manufacturing Example 4>

While stirring a mixture of 14 parts of MEK and 14 parts of cyclohexanone, 19 parts of liquid bisphenol A type epoxy resin (epoxy equivalent weight 180, "Jeep 828EL" manufactured by Mitsubishi Chemical Co., Ltd.) was dissolved. 15 parts of a tetrafunctional epoxy resin (epoxy equivalent 163, "HP4700" manufactured by IDC Co., Ltd.). Next, a phenol-based curing agent having a novolak structure ("LA7052" manufactured by DIC Co., Ltd., a MEK solution having a solid content of 60% by weight, a phenolic hydroxyl equivalent of 120) of 20 parts, and a phenoxy resin (molecular weight of 50,000, Mitsubishi Chemical ( 15 parts of MEK solution of 40% by weight of non-volatile content of "E1256") and hardening catalyst ("E2MZ" manufactured by Shikoku Chemicals Co., Ltd.) 0.2 A portion of 75 parts of spherical cerium oxide (SOC2) was dispensed and uniformly dispersed in a high-speed rotary mixer to prepare a resin varnish 4.

<Manufacturing Example 5>

Mixed polyethyleneimine resin ("T2" manufactured by Ajinomoto Seiki Co., Ltd.) 15.5 parts, diethylene glycol monoethyl ether acetate of bisphenol A novolac type epoxy resin (hereinafter referred to as EDGAc) And Iptra's 150 (aromatic hydrocarbon-based mixed solvent, manufactured by Idemitsu Petrochemical Co., Ltd.) mixed paint (solid content: 75 wt%, epoxy equivalent 210, Mitsubishi Chemical Co., Ltd. "157S70"), 14.4 parts, phenol novolac Varnish resin ("TD2090" manufactured by DIC Co., Ltd., MEK solution having a solid content of 60% by weight, phenolic hydroxyl equivalent of 105) 4.6 parts, and an imidazole derivative ("P200H50" manufactured by Mitsubishi Chemical Co., Ltd.) 0.2 parts and spherical After 15 parts of cerium oxide (SOC2), it was uniformly dispersed by a high-speed rotary mixer to prepare a resin varnish 5.

<Example 1> (Production of cured sheet for film layer)

The resin paint 1 was applied onto a PET film (38 μm) after the alkyd release treatment using a bar coater, and the thickness of the resin layer for the film layer after drying was 10 μm, and then 80 to 120 ° C (average The film was dried for 7 minutes at 100 ° C to obtain a film for the film layer. After the resin sheet was thermally cured at 180 ° C for 10 minutes, a cured sheet for a film layer was obtained. The glass transition temperature of the hardened layer was 120 °C.

(manufacturing the sealing layer)

The resin varnish 2 was uniformly applied to the release-treated surface of the PET film (38 μm) treated with the alkyd-based release agent using a bar coater, and the thickness of the resin composition layer for the sealing layer after drying was 300 μm. Further, it was dried at 80 to 120 ° C (average 100 ° C) for 7 minutes to obtain a sealing sheet for the sealing layer.

(Manufacture of partially hardened double layer and back sheet)

The resin composition layer for the sealing layer for the sealing layer was placed on the cured surface of the cured product sheet for the film layer by a contact method, and vacuum-applied at a temperature of 80 ° C for 20 seconds using a Motong vacuum laminator V160. Under the condition of a pressure of 1.0 kgf/cm ² , a heat-resistant rubber was laminated on the PET film for 20 seconds to obtain a two-layer sheet.

(Lamination and smoothing of partially hardened double-layered sheets)

The two-layer sheet was laminated on the semiconductor element side of the circuit board on which the semiconductor element was mounted (the size of the semiconductor element was 2.0 cm × 1.25 cm, the thickness was 200 μm, and the thickness of the core substrate was 60 μm) so as to be in contact with the resin composition layer for the sealing layer. After lamination step based vacuum pressure laminator Meiki (shares) of the manufactured MVLP-500, at a temperature of 100 deg.] C under vacuum suction for 30 seconds at temperature 120 ℃, pressure 7.0 kg / cm ² of the conditions, interposed The heat-resistant rubber was pressed from the top of the PET film for 30 seconds, and after lamination, it was pressed under atmospheric pressure using a SUS mirror plate at a temperature of 120 ° C and a pressure of 6.0 kg/cm ² for 60 seconds to smooth the two-layer sheet.

(thermal hardening of partially hardened double-layered sheets)

After peeling off the PET film, the circuit board of the laminated double-layer sheet was thermally hardened at 180 ° C for 90 minutes using a hot air circulating furnace to form an insulating layer. Thereby, the semiconductor package in which the semiconductor element is encapsulated by the insulating layer is obtained.

<Example 2>

In the manufacturing process of the cured sheet for a film layer, the resin paint 1 was uniformly applied to the PET film (38 μm) after the alkyd release treatment using a bar coater to form a resin composition layer for the dried film layer. A semiconductor package obtained in the same manner as in Example 1 except that the thickness was 20 μm.

<Example 3>

In the manufacturing process of the cured sheet for a film layer, the resin paint 1 was uniformly applied to the PET film (38 μm) after the alkyd release treatment using a bar coater to form a resin composition layer for the dried film layer. A semiconductor package obtained in the same manner as in Example 1 except that the thickness was 40 μm.

<Example 4>

In the manufacturing process of the cured sheet for a film layer, the resin paint 1 was uniformly applied to the PET film (38 μm) after the alkyd release treatment using a bar coater to form a resin composition layer for the dried film layer. A semiconductor package obtained in the same manner as in Example 1 except that the thickness was 80 μm.

<Example 5>

In the manufacturing process of the cured film for a film layer, the semiconductor package was obtained in the same manner as in Example 3 except that the film layer for the film layer was not directly cured by the heat-hardened film layer.

<Example 6>

A semiconductor package was obtained in the same manner as in Example 3 except that the resin 1 was used in place of the resin 1 in the production process of the cured film for a film layer.

<Example 7>

In the manufacturing process of the cured sheet for a film layer, the bar coater uniformly applies the resin paint 1 to the PET film (38 μm) after the alkyd release treatment, and the resin layer layer for the dried film layer is used. A semiconductor package obtained in the same manner as in Example 1 except that the thickness was 100 μm.

<Example 8>

In the manufacturing process of the sealing sheet for the sealing layer, the resin varnish 2 was uniformly applied to the PET film (38 μm) after the alkyd-based release treatment using a bar coater, and the resin composition layer for the sealing layer after drying was applied. A semiconductor package obtained in the same manner as in Example 2 except that the thickness was 100 μm.

<Example 9>

In the manufacturing process of the sealing sheet for the sealing layer, the resin varnish 2 was uniformly applied to the PET film (38 μm) after the alkyd-based release treatment using a bar coater, and the resin composition layer for the sealing layer after drying was applied. Thickness is 600μm A semiconductor package was obtained in the same manner as in the second embodiment.

<Example 10>

A semiconductor package was obtained in the same manner as in Example 8 except that the thickness of the core substrate was 40 μm.

<Example 11>

A semiconductor package was obtained in the same manner as in Example 5 except that the thickness of the film for the film layer was 20 μm and the thickness of the core substrate was 100 μm.

<Example 12>

After impregnating the glass woven fabric with the resin varnish 4, it is dried at 80 to 120 ° C (average 100 ° C), and the thickness of the dried film layer is made of the tree composition layer on the PET film (38 μm) after the alkyd release treatment. 20 μm, the film layer was used as a back sheet. The resin sheet was thermally cured at 180 ° C for 10 minutes to obtain a cured sheet for a film layer. The glass transition temperature of the hardened layer was 140 °C. A semiconductor package was obtained in the same manner as in Example 1 except that the cured sheet for a film layer was used.

<Example 13>

A semiconductor package was obtained in the same manner as in Example 11 except that the resin varnish 5 was used in place of the resin varnish 2 except for the production process of the sealing layer.

<Example 14>

In addition to the manufacturing process of the hardened sheet for the film layer, a bar coater will be used. The resin varnish 1 was uniformly applied to a PET film (38 μm) after the alkyd-based release treatment, and the semiconductor package obtained in the same manner as in Example 1 was obtained except that the thickness of the resin layer layer for the film layer after drying was 150 μm.

<Comparative Example 1>

A semiconductor package was obtained in the same manner as in Example 1 except that the cured film for the film layer was not used, and the semiconductor element was only encapsulated by the sealing layer.

<Comparative Example 2>

A semiconductor package was obtained in the same manner as in Comparative Example 1, except that the resin varnish 1 of Comparative Example 1 was replaced with Resin Paint 1.

<Comparative Example 3> (Manufacture of cured sheet for film layer)

The resin varnish 2 was uniformly applied to an alkyd-based PET film (38 μm) by bar coating, and the thickness of the dried resin composition layer was 40 μm, followed by 80 to 120 ° C (average 100 ° C). Drying for 7 minutes gave a tablet. The resin sheet was heat-hardened at 180 ° C for 10 minutes to obtain a cured sheet. The glass transition temperature of the hardened layer was 90 °C.

(Manufacture of sealing sheet for the sealing layer)

The resin paint 1 was uniformly applied to the release-treated surface of the PET film (38 μm) treated with the alkyd-based release treatment agent using a bar coater, and the thickness of the dried resin composition layer was 300 μm, followed by 80. Up to 120 ° C (flat Drying at 100 ° C for 7 minutes gave a tablet. Thereafter, a semiconductor package was obtained in the same manner as in Example 1.

<Comparative Example 4>

In the manufacturing process of the sealing sheet for the sealing layer, the resin varnish 2 was uniformly applied to the PET film (38 μm) after the alkyd-based release treatment using a bar coater, and the resin composition layer for the sealing layer after drying was applied. A semiconductor package obtained in the same manner as in Example 2 except that the thickness was 80 μm.

<Comparative Example 5>

In the manufacturing process of the sealing sheet for the sealing layer, the resin varnish 2 was uniformly applied to the PET film (38 μm) after the alkyd-based release treatment using a bar coater, and the resin composition layer for the sealing layer after drying was applied. A semiconductor package obtained in the same manner as in Example 2 except that the thickness was 700 μm.

The results are shown in Table 1, Table 2, and Table 3.

As is apparent from the results of Tables 1 and 2, in Examples 1 to 14, since the semiconductor package of the present invention was used, the semiconductor package having less warpage of the package was used. Further, as is apparent from the results of Table 3, in Comparative Examples 1 to 5, since the semiconductor package of the present invention was not used, the package warp was large.

Industrial use possibility

The present invention can provide a semiconductor package which can suppress warpage of a package even if the circuit substrate is thinned. It can also provide electrical products such as computers, mobile phones, digital cameras, televisions, and the like, as well as passenger vehicles such as electric cars, automobiles, electric cars, ships, and airplanes.

1‧‧‧Semiconductor package

2‧‧‧film layer

3‧‧‧ sealing layer

4‧‧‧ circuit substrate layer

5‧‧‧Semiconductor components

Fig. 1 is a schematic cross-sectional view showing a semiconductor package of the present embodiment.

Claims (14)

A semiconductor package comprising a (A layer) film layer having a storage modulus of 5 GPa or more and 25 GPa or less, and a (B layer) sealing layer having a storage modulus of 0.1 GPa or more and 1 GPa or less, and a (C layer) circuit. The substrate layer, in addition, the thickness of the A layer is 1 to 200 μm, the thickness of the B layer is 100 to 600 μm, the thickness of the C layer is 1 to 100 μm, and the warpage of the package is 235 μm or less. The semiconductor package of claim 1, wherein the thickness of the layer A is in the range of 0.05 to 3 when the thickness of the layer C is 1. In the semiconductor package of claim 1, wherein the thickness of the layer C is 1, the thickness of the layer B is in the range of 0.05 to 10. The semiconductor package of claim 1, wherein the A layer has a thickness of 10 to 150 μm, the B layer has a thickness of 100 to 500 μm, the C layer has a thickness of 50 to 100 μm, and the package warp is 0.1 to 200 μm. The semiconductor package of claim 4, wherein the thickness of the layer A is 20 to 70 μm. The semiconductor package of claim 1, wherein the package warpage after the reflow treatment is 360 μm or less. The semiconductor package of claim 6, wherein the package warpage after the reflow treatment is 0.1 to 250 μm. A method of producing a semiconductor package according to any one of claims 1 to 7, characterized in that the sealing layer is directly coated with a resin paste and dried on the layer C to form a layer B. A method of manufacturing a semiconductor package according to any one of claims 1 to 7, characterized in that the B layer is formed by laminating a sealing layer on the C layer with an adhesive sheet. A method of producing a semiconductor package according to any one of claims 1 to 7, characterized in that the film layer is coated with a resin paste and dried on the layer B to form an A layer. A method of manufacturing a semiconductor package according to any one of claims 1 to 7, characterized in that the film layer is formed by laminating a film layer on the layer B with an adhesive sheet. A method of manufacturing a semiconductor package according to any one of claims 1 to 7, characterized in that the layer A is formed by laminating a film for a film layer on the layer B. A method of manufacturing a semiconductor package according to any one of claims 1 to 7, characterized in that it comprises the following steps 1) to 4), step 1) of applying a resin varnish to a support to dry it. , the step of producing a film layer for the adhesive sheet, or impregnating the sheet-like fiber substrate with the resin varnish, drying the film for the film layer, and the step of 2), applying the resin varnish to the support and drying it to produce a sealing layer. After step 3) of laminating the film, after laminating the film for the film layer and the back sheet for the sealing layer, Step of removing the support for the sealing layer by the support sheet, and manufacturing the double-layered back sheet. Step 4) Laminating the sealing layer of the double-layered back sheet to the layer C with the resin composition layer. A method of manufacturing a semiconductor package according to any one of claims 1 to 7, characterized in that it comprises the following steps 1) to 4), step 1) of applying a resin varnish to a support to dry it. , thermosetting, step of producing a cured sheet for a film layer, or impregnating a sheet-like fibrous substrate with a resin varnish to dry and heat-harden, and preparing a cured sheet for a film layer, step 2) applying a resin varnish to the support After the article is dried, the step of forming the sealing layer is carried out. Step 3) After laminating the cured sheet for the film layer and the back sheet for the sealing layer, the support for the sealing sheet is removed to produce a partially hardened double layer. Step 4) The step of laminating the partially sealed double-layered sealing layer with the resin composition layer on the C layer.