JP3818183B2 - Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same - Google Patents
Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same Download PDFInfo
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- JP3818183B2 JP3818183B2 JP2002072828A JP2002072828A JP3818183B2 JP 3818183 B2 JP3818183 B2 JP 3818183B2 JP 2002072828 A JP2002072828 A JP 2002072828A JP 2002072828 A JP2002072828 A JP 2002072828A JP 3818183 B2 JP3818183 B2 JP 3818183B2
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- Prior art keywords
- epoxy resin
- resin composition
- semiconductor
- structural formula
- semiconductor encapsulation
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Description
【0001】
【発明の属する技術分野】
本発明は、成形性、信頼性に優れた半導体用封止材及びそれを用いた半導体装置に関する。
【0002】
【従来の技術】
半導体素子は、その外形は小型化、薄型化が進む一方で、素子の高性能化によりピン数は増加傾向にある。その結果、半導体素子と基板を接続するアウターリードの間隙は狭くなり、基板実装が困難になってきている。この対策としてこれまでのSOP、QFPといった外形に代わりBGA(Ball Grid Array)が提案され、量産も始まっている。
【0003】
BGAは、素子の裏面の一部あるいは全面に、接続用の半田ボールを形成するため、ボール間隙が広く取れ、多ピン化に適した外形であるといえる。一方、BGAはBT(ビスマレイミドトリアジン樹脂)基板あるいはガラエポ基板上に、封止材を片面成形する方式であるため必然的にバイメタル構造となり、基板と封止材の収縮率の差によりパッケージに反りが発生し易くなってしまう。また、基板と接着性が優れていることが重要である。
【0004】
この問題に対しては、多官能エポキシ樹脂と特定の硬化剤、硬化促進剤等を組み合わせる(特開平8−176277号公報)、あるいはガラス転移温度が20℃以上異なる封止材を混合して封止するといった検討がなされている(特開平8−213518号公報)が十分なものではなかった。
【0005】
一般的には、反りが150ミクロンを超えると基板実装性に問題が出てくると言われ、好ましくは50ミクロン以下とされているが、これまでの技術ではBGAの外形が大きくなった場合、反りを50ミクロン以下に抑えることは困難であった。
【0006】
【発明が解決しようとする課題】
本発明は、かかる状況に鑑みなされたもので、半導体装置、特に片面成形のBGAパッケージを封止した時の低反り性に優れ、且つ、耐半田リフロー性に優れた半導体封止用エポキシ樹脂組成物及びそれを用いた半導体装置を提供することを目的とする。
【0007】
【課題を解決するための手段】
かかる目的は本発明によれば、特定のエポキシ樹脂と特定のフェノール樹脂硬化剤を組み合わせ、好ましくは、更に無機充填剤配合量を高充填化することにより達成される。
【0008】
すなわち、本発明は、(A)下記構造式1で表されるエポキシ樹脂を50重量%以上含有するエポキシ樹脂、
【化4】
(nは、0〜4で表される正の整数)
(B)下記構造式2で表されるアラルキルフェノール樹脂を50重量%以上含有するフェノール樹脂系硬化剤、
【化5】
(mは0以上の整数、nは1以上の整数)
を必須成分とする半導体封止用エポキシ樹脂組成物、好ましくはさらに(C)無機充填材を含有し、その含有量が、全組成物の87〜93重量%である半導体封止用エポキシ樹脂組成物、より好ましくはさらに(D)下記構造式3で表されるリン系化合物
【化6】
(R1、R2、R3はH若しくはアルキル基)
を含有する半導体封止用エポキシ樹脂組成物、およびそれを用いたBGAパッケージ等の半導体装置に関する。
【0009】
【発明の実施の形態】
(A)成分のエポキシ樹脂は、上記構造式1で表されるエポキシ樹脂のみからなるものであってもよいし、それ以外に1分子中に2個以上のエポキシ基を有する他のエポキシ樹脂を総エポキシ樹脂中の50重量%まで併用してもよい。併用されるエポキシ樹脂としては、オルソクレゾールノボラック型エポキシ樹脂、ジシクロペンタジエン型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、ビスフェノール型エポキシ樹脂等が挙げられる。
【0010】
(B)成分のアラルキルフェノール樹脂は、構造式2で示される化合物のみからなるものであってもよいが、他の1分子中に2個以上のフェノール性水酸基を有するフェノールノボラック樹脂、アルキルノボラック樹脂等を併用してもよい。また、構造式2のm/nの比が8/2〜2/8の範囲であるアラルキルフェノール樹脂を用いることが高接着性、高ガラス転移点の点から好ましい。
【0011】
(C)成分の無機充填材としては、例えば、溶融シリカ粉末、結晶シリカ粉末、アルミナ、窒化アルミ、窒化ケイ素等が用いられる。その形状としては、球状、不定形、楕円形のものが用いられる。これらの使用は単独及び併用でも構わない。その配合量は、エポキシ樹脂組成物総量中87〜93重量%が好適である。配合量が87重量%より少ないと反り量が増加するし、93重量%を超えると流動性に問題が出やすい。
【0012】
(D)成分のリン化合物は、硬化促進剤として作用するもので、これを用いることにより流動性が良くなると共に熱時硬度が改善され成形作業が向上する。
【0013】
硬化促進剤としては(D)成分のほかにトリフェニルホスフィン、第3級アミン類、イミダゾ−ル類等といったエポキシ樹脂とフェノ−ル樹脂系硬化剤の反応を促進する化合物が挙げられ、これらを単独で用いても、2種以上を組み合わせて用いてもよく、又、(D)成分と組み合わせて用いてもよい。
【0014】
構造式3で示される化合物は、例えば下記のような方法で得ることができる。
1.トリ(p−トリル)ホスフィン48.3gをアセトン200gに溶解する。
2.pベンゾキノン17.6gをアセトン80gに溶解する。
【0015】
3.1と2の溶液を室温〜80℃で混合する。
【0016】
4.析出した黄褐色結晶を濾過して取り出し用に供する。
【0017】
上記反応溶媒としてはアセトンとトルエン等の混合溶媒を用いてもよい。
【0018】
なお、構造式1,2で示されるものは市中より入手することができる。
【0019】
また、必要に応じて、着色剤、離型剤、難燃剤又はカップリング剤等の公知の添加剤成分を配合し用いても構わない。
【0020】
上記原材料を各々適宜配合し、この配合物をミキシングロール機等の混練機にかけ混練して半溶融状態の樹脂組成物とし、これをシート状にして室温に冷却した後、公知の手段により粉砕し、必要に応じて打錠するといった一連の工程により、目的とする半導体封止用エポキシ樹脂組成物を得ることができる。
【0021】
本発明の半導体封止用エポキシ樹脂組成物は、通常粉末状またはそれを打錠したタブレット状の材料として、半導体の封止に用いられる。
【0022】
本発明のエポキシ樹脂組成物を用いて、半導体素子を封止することにより、半導体装置の反りが小さく、且つ、耐半田リフロー性の優れた樹脂封止型半導体装置が得られる。
【0023】
【実施例】
以下、本発明を実施例及び比較例によって、更に具体的に説明するが、本発明は、これらの実施例に限定されるものではない。
【0024】
まず、表1に示す重量部で各材料を配合し予備混合した後、10インチ径の二軸ロール機を使用して、混練温度80〜90℃、混練時間7〜12分の条件で混練し、冷却後粉砕して半導体封止用エポキシ樹脂組成物を得た。この封止用エポキシ樹脂組成物を用い、トランスファー成形機で、金型温度180℃、成形圧力70、硬化時間90秒の条件で成形し、試験片を作製した。後硬化は175℃、6時間行った。
【0025】
スパイラルフローは、EMMI1−66に準じて測定した。熱時硬度は、上記条件で成形した成形品のショアー硬度を測定した。ALピール接着力は、厚み約0.03mmのアルミホイル上に成形した幅10mmの成形品にて測定した。
【0026】
耐半田フロークラック性は、BGA35×35×1.5mm,BT基板0.06mmチップ12×12mmのパッケ−ジを用い、上記条件にて成形、後硬化後、85℃/65RH%の環境で168h時間放置した後、リフロー炉にて加熱(炉内温度:Max245℃)し、クラックの有無を超音波探傷装置にて観察した。
【0027】
反り量は、BGA35×35mm、パッケージ厚み1.5mm、BT基板0.06mm厚、チップ12×12mmのパッケージを用い、上記条件で成形、後硬化後基板側より対角方向での最大反り量を測定した。
【0028】
表1に実施例1〜3と比較例1〜3の組成及び評価結果を示す。これらの結果から分かるように、本発明の半導体封止用エポキシ樹脂組成物を用いた基板は、反り量が小さく、耐半田リフロー性に優れている。特に(D)成分の化合物を用いた実施例1及び2では熱時硬度にも優れている。
【0029】
【表1】
【0030】
【発明の効果】
本発明によれば、特定のエポキシ樹脂と特定のフェノール樹脂硬化剤及び硬化促進剤を組み合わせ、更に無機充填剤配合量を高充填化することにより、反りが小さく、且つ、耐半田リフロー性の優れた樹脂封止型半導体装置が得られる。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor sealing material excellent in moldability and reliability and a semiconductor device using the same.
[0002]
[Prior art]
Semiconductor devices are becoming smaller and thinner in outer shape, but the number of pins tends to increase due to higher performance of the devices. As a result, the gap between the outer leads connecting the semiconductor element and the substrate is narrowed, making it difficult to mount the substrate. As a countermeasure, BGA (Ball Grid Array) has been proposed in place of the conventional SOP and QFP profiles, and mass production has begun.
[0003]
BGA is formed with solder balls for connection on a part or the whole of the back surface of the element, so that it can be said that the ball gap is wide and the outer shape is suitable for increasing the number of pins. On the other hand, BGA is a method in which a sealing material is formed on one side on a BT (bismaleimide triazine resin) substrate or a glass epoxy substrate, so it inevitably has a bimetallic structure and warps the package due to the difference in shrinkage between the substrate and the sealing material. Is likely to occur. In addition, it is important that the adhesiveness with the substrate is excellent.
[0004]
To solve this problem, a polyfunctional epoxy resin is combined with a specific curing agent, a curing accelerator, etc. (Japanese Patent Laid-Open No. 8-176277), or a sealing material having a glass transition temperature of 20 ° C. or more is mixed and sealed. However, it has not been sufficiently studied (Japanese Patent Laid-Open No. 8-213518).
[0005]
In general, it is said that if the warpage exceeds 150 microns, there will be a problem in board mountability, preferably 50 microns or less. However, with the conventional technology, It was difficult to suppress warpage to 50 microns or less.
[0006]
[Problems to be solved by the invention]
The present invention has been made in view of such a situation, and is an epoxy resin composition for semiconductor encapsulation that is excellent in low warpage when a semiconductor device, particularly a single-sided BGA package is sealed, and excellent in solder reflow resistance. An object is to provide an object and a semiconductor device using the object.
[0007]
[Means for Solving the Problems]
According to the present invention, this object is achieved by combining a specific epoxy resin and a specific phenol resin curing agent, and preferably by further increasing the amount of inorganic filler compounded.
[0008]
That is, the present invention provides (A) an epoxy resin containing 50% by weight or more of an epoxy resin represented by the following structural formula 1,
[Formula 4]
(N is a positive integer represented by 0 to 4)
(B) a phenol resin-based curing agent containing 50% by weight or more of an aralkylphenol resin represented by the following structural formula 2,
[Chemical formula 5]
(M is an integer of 0 or more, n is an integer of 1 or more)
Epoxy resin composition for semiconductor encapsulation, preferably containing (C) an inorganic filler, the content of which is 87 to 93% by weight of the total composition Product, more preferably (D) a phosphorus compound represented by the following structural formula 3
(R1, R2, and R3 are H or an alkyl group)
The present invention relates to an epoxy resin composition for semiconductor encapsulation containing a semiconductor device and a semiconductor device such as a BGA package using the same.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
The epoxy resin as the component (A) may be composed only of the epoxy resin represented by the structural formula 1, or other epoxy resin having two or more epoxy groups in one molecule. You may use together to 50 weight% in a total epoxy resin. Examples of the epoxy resin used in combination include an orthocresol novolak type epoxy resin, a dicyclopentadiene type epoxy resin, a phenol novolak type epoxy resin, a bisphenol type epoxy resin, and the like.
[0010]
The component (B) aralkylphenol resin may be composed only of the compound represented by the structural formula 2, but the phenol novolac resin or alkyl novolac resin having two or more phenolic hydroxyl groups in another molecule. Etc. may be used in combination. Moreover, it is preferable from the point of high adhesiveness and a high glass transition point to use the aralkyl phenol resin whose ratio of m / n of Structural formula 2 is the range of 8/2-2/8.
[0011]
As the inorganic filler of component (C), for example, fused silica powder, crystalline silica powder, alumina, aluminum nitride, silicon nitride or the like is used. As the shape, a spherical shape, an indefinite shape, or an elliptical shape is used. These may be used alone or in combination. The blending amount is preferably 87 to 93% by weight in the total amount of the epoxy resin composition. If the blending amount is less than 87% by weight, the amount of warpage increases.
[0012]
The phosphorus compound of component (D) acts as a curing accelerator, and by using this, the fluidity is improved and the hot hardness is improved and the molding operation is improved.
[0013]
In addition to the component (D), examples of the curing accelerator include compounds that accelerate the reaction between the epoxy resin and the phenol resin-based curing agent such as triphenylphosphine, tertiary amines, imidazoles, and the like. It may be used alone, in combination of two or more kinds, or in combination with component (D).
[0014]
The compound represented by Structural Formula 3 can be obtained, for example, by the following method.
1. 48.3 g of tri (p-tolyl) phosphine is dissolved in 200 g of acetone.
2. 17.6 g of p-benzoquinone is dissolved in 80 g of acetone.
[0015]
3. Mix solutions 1 and 2 at room temperature to 80 ° C.
[0016]
4). The precipitated tan crystals are filtered and used for removal.
[0017]
As the reaction solvent, a mixed solvent such as acetone and toluene may be used.
[0018]
In addition, what is shown by Structural Formula 1, 2 can be obtained from the market.
[0019]
Moreover, you may mix | blend and use well-known additive components, such as a coloring agent, a mold release agent, a flame retardant, or a coupling agent, as needed.
[0020]
Each of the above raw materials is appropriately blended, and this blend is kneaded in a kneader such as a mixing roll machine to obtain a semi-molten resin composition, which is cooled to room temperature in a sheet form and then pulverized by known means. The target epoxy resin composition for semiconductor encapsulation can be obtained by a series of steps such as tableting as necessary.
[0021]
The epoxy resin composition for semiconductor encapsulation of the present invention is usually used for semiconductor encapsulation as a powder or tablet-like material obtained by tableting it.
[0022]
By sealing the semiconductor element using the epoxy resin composition of the present invention, a resin-encapsulated semiconductor device having a small warpage of the semiconductor device and excellent solder reflow resistance can be obtained.
[0023]
【Example】
EXAMPLES Hereinafter, although an Example and a comparative example demonstrate this invention further more concretely, this invention is not limited to these Examples.
[0024]
First, after mixing and premixing each material with the weight part shown in Table 1, it knead | mixed on the conditions of kneading | mixing temperature 80-90 degreeC and kneading | mixing time 7-12 minutes using a 10-inch diameter biaxial roll machine. After cooling, the mixture was pulverized to obtain an epoxy resin composition for semiconductor encapsulation. Using this sealing epoxy resin composition, it was molded by a transfer molding machine under conditions of a mold temperature of 180 ° C., a molding pressure of 70, and a curing time of 90 seconds to prepare a test piece. Post-curing was performed at 175 ° C. for 6 hours.
[0025]
The spiral flow was measured according to EMMI1-66. For the hardness at the time of heating, the Shore hardness of a molded product molded under the above conditions was measured. The AL peel adhesive strength was measured with a molded product having a width of 10 mm formed on an aluminum foil having a thickness of about 0.03 mm.
[0026]
Solder flow crack resistance is 168h in an environment of 85 ° C / 65RH% after molding and post-curing under the above conditions using a package of BGA 35 x 35 x 1.5 mm, BT substrate 0.06 mm chip 12 x 12 mm. After being left for a period of time, it was heated in a reflow furnace (furnace temperature: Max 245 ° C.), and the presence of cracks was observed with an ultrasonic flaw detector.
[0027]
The amount of warpage is BGA 35 x 35 mm, package thickness 1.5 mm, BT substrate 0.06 mm thickness, chip 12 x 12 mm package, molded under the above conditions, post-curing maximum warpage in the diagonal direction from the substrate side It was measured.
[0028]
Table 1 shows the compositions and evaluation results of Examples 1 to 3 and Comparative Examples 1 to 3. As can be seen from these results, the substrate using the epoxy resin composition for semiconductor encapsulation of the present invention has a small amount of warpage and excellent solder reflow resistance. In particular, in Examples 1 and 2 using the compound of the component (D), the heat hardness is also excellent.
[0029]
[Table 1]
[0030]
【The invention's effect】
According to the present invention, by combining a specific epoxy resin, a specific phenol resin curing agent and a curing accelerator, and further increasing the amount of the inorganic filler, the warpage is small and the solder reflow resistance is excellent. A resin-encapsulated semiconductor device can be obtained.
Claims (8)
(B)下記構造式2で表されるアラルキルフェノール樹脂を50重量%以上含有するフェノール樹脂系硬化剤、
(D)下記構造式3で表されるリン系化合物
を必須成分とする半導体封止用エポキシ樹脂組成物。(A) an epoxy resin containing 50 wt% or more of an epoxy resin represented by the following structural formula 1,
(B) a phenol resin-based curing agent containing 50% by weight or more of an aralkylphenol resin represented by the following structural formula 2,
(D) Phosphorus compound represented by the following structural formula 3
An epoxy resin composition for encapsulating semiconductors, containing as an essential component.
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JP2002072828A JP3818183B2 (en) | 2002-03-15 | 2002-03-15 | Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same |
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JP10277390A Division JP2000103942A (en) | 1998-09-30 | 1998-09-30 | Epoxy resin composition for sealing semiconductor and semiconductor device using the same |
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