KR101939594B1 - 초기 장입물만을 도핑하여 균등하게 도핑된 실리콘 잉곳의 성장 - Google Patents

초기 장입물만을 도핑하여 균등하게 도핑된 실리콘 잉곳의 성장 Download PDF

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KR101939594B1
KR101939594B1 KR1020137032404A KR20137032404A KR101939594B1 KR 101939594 B1 KR101939594 B1 KR 101939594B1 KR 1020137032404 A KR1020137032404 A KR 1020137032404A KR 20137032404 A KR20137032404 A KR 20137032404A KR 101939594 B1 KR101939594 B1 KR 101939594B1
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silicon
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crucible
ingot
dopant
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KR20140096993A (ko
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바야드 케이. 존슨
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지티에이티 아이피 홀딩 엘엘씨
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
KR1020137032404A 2011-05-06 2012-05-04 초기 장입물만을 도핑하여 균등하게 도핑된 실리콘 잉곳의 성장 Active KR101939594B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161483140P 2011-05-06 2011-05-06
US61/483,140 2011-05-06
PCT/US2012/036497 WO2012154551A2 (en) 2011-05-06 2012-05-04 Growth of a uniformly doped silicon ingot by doping only the initial charge

Publications (2)

Publication Number Publication Date
KR20140096993A KR20140096993A (ko) 2014-08-06
KR101939594B1 true KR101939594B1 (ko) 2019-01-17

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KR1020137032404A Active KR101939594B1 (ko) 2011-05-06 2012-05-04 초기 장입물만을 도핑하여 균등하게 도핑된 실리콘 잉곳의 성장

Country Status (9)

Country Link
US (1) US10544517B2 (https=)
EP (1) EP2705178B1 (https=)
JP (1) JP5909276B2 (https=)
KR (1) KR101939594B1 (https=)
CN (1) CN103635613B (https=)
MY (1) MY169752A (https=)
PH (1) PH12013502255A1 (https=)
TW (1) TWI588303B (https=)
WO (1) WO2012154551A2 (https=)

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Publication number Priority date Publication date Assignee Title
DE102013203740B4 (de) * 2013-03-05 2020-06-18 Solarworld Industries Gmbh Vorrichtung und Vefahren zur Herstellung von Silizium-Blöcken
FR3010721B1 (fr) * 2013-09-17 2017-02-24 Commissariat Energie Atomique Procede de fabrication d'un lingot de silicium presentant une concentration homogene en phosphore
JP6056772B2 (ja) 2014-01-07 2017-01-11 株式会社Sumco エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
KR20150106204A (ko) 2014-03-11 2015-09-21 (주)기술과가치 잉곳 제조 장치
KR20150107540A (ko) 2014-03-14 2015-09-23 (주)기술과가치 잉곳 제조 장치
JP6471492B2 (ja) * 2014-12-24 2019-02-20 株式会社Sumco 単結晶の製造方法
CN108138354B (zh) * 2015-05-01 2021-05-28 各星有限公司 生产被挥发性掺杂剂掺杂的单晶锭的方法
US20180291524A1 (en) * 2015-05-01 2018-10-11 Corner Star Limited Methods for producing single crystal ingots doped with volatile dopants
CN105755532A (zh) * 2016-04-13 2016-07-13 江西赛维Ldk太阳能高科技有限公司 一种晶体硅的制备方法及晶体硅
CN105951173A (zh) * 2016-05-30 2016-09-21 上海超硅半导体有限公司 N型单晶硅晶锭及其制造方法
US20180087179A1 (en) * 2016-09-28 2018-03-29 Corner Star Limited Single crystal silicon ingots having doped axial regions with different resistivity and methods for producing such ingots
CN114606567B (zh) * 2017-04-25 2024-10-01 胜高股份有限公司 n型单晶硅的制造方法、n型单晶硅的锭、硅晶片及外延硅晶片
JP7080017B2 (ja) 2017-04-25 2022-06-03 株式会社Sumco ｎ型シリコン単結晶のインゴット、シリコンウェーハ、およびエピタキシャルシリコンウェーハ
CN110158148A (zh) * 2019-04-29 2019-08-23 江苏协鑫软控设备科技发展有限公司 晶硅及其晶体生长工艺
US11585010B2 (en) 2019-06-28 2023-02-21 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant
EP4244411A1 (en) * 2020-11-11 2023-09-20 GlobalWafers Co., Ltd. Methods for forming a single crystal silicon ingot with reduced crucible erosion
US11742451B2 (en) * 2020-11-24 2023-08-29 Cisco Technology, Inc. Integrate stressor with Ge photodiode using a substrate removal process
CN113862778A (zh) * 2021-09-30 2021-12-31 西安奕斯伟材料科技有限公司 坩埚组件、拉晶炉及拉制单晶硅棒的方法
KR102516630B1 (ko) * 2021-10-18 2023-03-30 한화솔루션 주식회사 잉곳 성장 장치

Citations (1)

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JP2006315869A (ja) 2005-05-10 2006-11-24 Sumco Corp 窒素ドープシリコン単結晶の製造方法

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JPS6379790A (ja) * 1986-09-22 1988-04-09 Toshiba Corp 結晶引上げ装置
JPS6395195A (ja) 1986-10-08 1988-04-26 Toshiba Corp 結晶引上げ方法及び装置
JP2755588B2 (ja) * 1988-02-22 1998-05-20 株式会社東芝 結晶引上げ方法
JPH085740B2 (ja) * 1988-02-25 1996-01-24 株式会社東芝 半導体の結晶引上げ方法
JPH0392774U (https=) 1989-12-28 1991-09-20
US5427056A (en) 1990-10-17 1995-06-27 Komatsu Electronic Metals Co., Ltd. Apparatus and method for producing single crystal
JP3484870B2 (ja) 1996-03-27 2004-01-06 信越半導体株式会社 連続チャージ法によるシリコン単結晶の製造方法およびドーパント供給装置

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2006315869A (ja) 2005-05-10 2006-11-24 Sumco Corp 窒素ドープシリコン単結晶の製造方法

Also Published As

Publication number Publication date
CN103635613A (zh) 2014-03-12
KR20140096993A (ko) 2014-08-06
US20120279437A1 (en) 2012-11-08
CN103635613B (zh) 2017-02-15
MY169752A (en) 2019-05-15
EP2705178A4 (en) 2015-04-15
US10544517B2 (en) 2020-01-28
PH12013502255A1 (en) 2014-01-13
TWI588303B (zh) 2017-06-21
WO2012154551A2 (en) 2012-11-15
JP5909276B2 (ja) 2016-04-26
EP2705178A2 (en) 2014-03-12
JP2014513034A (ja) 2014-05-29
WO2012154551A3 (en) 2013-03-21
TW201303092A (zh) 2013-01-16
EP2705178B1 (en) 2016-07-06

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