KR101937767B1 - Mems 캐비티 플로어로부터 실리콘 잔류물을 제거하는 방법 - Google Patents

Mems 캐비티 플로어로부터 실리콘 잔류물을 제거하는 방법 Download PDF

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KR101937767B1
KR101937767B1 KR1020147005594A KR20147005594A KR101937767B1 KR 101937767 B1 KR101937767 B1 KR 101937767B1 KR 1020147005594 A KR1020147005594 A KR 1020147005594A KR 20147005594 A KR20147005594 A KR 20147005594A KR 101937767 B1 KR101937767 B1 KR 101937767B1
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South Korea
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substrate
cavity
adhesive layer
rti
layer
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KR20140053263A (ko
Inventor
브라이언 아이. 트로이
미카엘 르노
토머스 엘. 맥과이어
조셉 대미언 고든 레이시
제임스 에프. 바비
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카벤디시 키네틱스, 인크.
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Assigned to 코르보 유에스, 인크. reassignment 코르보 유에스, 인크. 권리의 전부이전등록 Assignors: 카벤디시 키네틱스, 인크.
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00484—Processes for releasing structures not provided for in group B81C1/00476
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/0008—Structures for avoiding electrostatic attraction, e.g. avoiding charge accumulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/014—Switches characterised by the shape having a cantilever fixed on one side connected to one or more dimples
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/01—Switches
    • B81B2201/012—Switches characterised by the shape
    • B81B2201/018—Switches not provided for in B81B2201/014 - B81B2201/016
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102—Surface micromachining
    • B81C2201/0105—Sacrificial layer
    • B81C2201/0108—Sacrificial polymer, ashing of organics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
    • H01H2001/0089—Providing protection of elements to be released by etching of sacrificial element; Avoiding stiction problems, e.g. of movable element to substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Micromachines (AREA)
KR1020147005594A 2011-08-03 2012-08-03 Mems 캐비티 플로어로부터 실리콘 잔류물을 제거하는 방법 Active KR101937767B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161514823P 2011-08-03 2011-08-03
US61/514,823 2011-08-03
US13/565,693 US8921165B2 (en) 2011-08-03 2012-08-02 Elimination of silicon residues from MEMS cavity floor
US13/565,693 2012-08-02
PCT/US2012/049497 WO2013020039A2 (en) 2011-08-03 2012-08-03 Elimination of silicon residues from mems cavity floor

Publications (2)

Publication Number Publication Date
KR20140053263A KR20140053263A (ko) 2014-05-07
KR101937767B1 true KR101937767B1 (ko) 2019-04-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147005594A Active KR101937767B1 (ko) 2011-08-03 2012-08-03 Mems 캐비티 플로어로부터 실리콘 잔류물을 제거하는 방법

Country Status (6)

Country Link
US (1) US8921165B2 (https=)
EP (1) EP2739562B1 (https=)
JP (1) JP6021914B2 (https=)
KR (1) KR101937767B1 (https=)
CN (1) CN103732528B (https=)
WO (1) WO2013020039A2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10707039B2 (en) * 2015-11-16 2020-07-07 Cavendish Kinetics, Inc. Current handling in legs and anchors of RF-switch
GB202117751D0 (en) * 2019-11-14 2022-01-26 Memsstar Ltd Method of manufacturing a microstructure
EP3929540A1 (en) * 2020-06-26 2021-12-29 TE Connectivity Norge AS Attachment system for attaching a sensor to a substrate, method of attaching a sensor to a substrate
US11332364B1 (en) * 2021-01-29 2022-05-17 AAC Technologies Pte. Ltd. Method for forming MEMS cavity structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006231439A (ja) * 2005-02-23 2006-09-07 Sony Corp 微小機械素子とその製造方法、半導体装置、ならびに通信装置
JP2007073711A (ja) * 2005-09-06 2007-03-22 Nippon Telegr & Teleph Corp <Ntt> 気密封止パッケージおよび光サブモジュール
JP2009009884A (ja) * 2007-06-29 2009-01-15 Mitsubishi Electric Corp Ｍｅｍｓスイッチ及びその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5531018A (en) * 1993-12-20 1996-07-02 General Electric Company Method of micromachining electromagnetically actuated current switches with polyimide reinforcement seals, and switches produced thereby
US5994161A (en) * 1997-09-03 1999-11-30 Motorola, Inc. Temperature coefficient of offset adjusted semiconductor device and method thereof
GB0011964D0 (en) * 2000-05-18 2000-07-05 Suyal N Thick glass films with controlled refractive indices and their applications
US6876056B2 (en) * 2001-04-19 2005-04-05 Interuniversitair Microelektronica Centrum (Imec) Method and system for fabrication of integrated tunable/switchable passive microwave and millimeter wave modules
US6798029B2 (en) * 2003-05-09 2004-09-28 International Business Machines Corporation Method of fabricating micro-electromechanical switches on CMOS compatible substrates
US7148436B1 (en) * 2003-08-14 2006-12-12 Sandia Corporation Microelectromechanical acceleration-sensing apparatus
TW593127B (en) * 2003-08-18 2004-06-21 Prime View Int Co Ltd Interference display plate and manufacturing method thereof
WO2007058605A1 (en) * 2005-11-18 2007-05-24 Replisaurus Technologies Ab Master electrode and method of forming it
KR20080097023A (ko) * 2007-04-30 2008-11-04 엘지전자 주식회사 Ｒｆ ｍｅｍｓ 스위치 및 그 제조 방법
CN101572850A (zh) * 2008-04-11 2009-11-04 王文 在低温下制作的带应力释放膜的电容式麦克风及其制作方法
JP4636292B2 (ja) * 2008-08-27 2011-02-23 株式会社村田製作所 電子部品及び電子部品の製造方法
CN101738865A (zh) * 2008-11-05 2010-06-16 中芯国际集成电路制造(上海)有限公司 一种干法贴膜工艺
CN101800189B (zh) * 2009-02-11 2013-05-01 中国科学院微电子研究所 利用苯并环丁烯制作介质桥的方法
US8289674B2 (en) 2009-03-17 2012-10-16 Cavendish Kinetics, Ltd. Moving a free-standing structure between high and low adhesion states

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006231439A (ja) * 2005-02-23 2006-09-07 Sony Corp 微小機械素子とその製造方法、半導体装置、ならびに通信装置
JP2007073711A (ja) * 2005-09-06 2007-03-22 Nippon Telegr & Teleph Corp <Ntt> 気密封止パッケージおよび光サブモジュール
JP2009009884A (ja) * 2007-06-29 2009-01-15 Mitsubishi Electric Corp Ｍｅｍｓスイッチ及びその製造方法

Also Published As

Publication number Publication date
US20130032453A1 (en) 2013-02-07
JP6021914B2 (ja) 2016-11-09
WO2013020039A2 (en) 2013-02-07
US8921165B2 (en) 2014-12-30
EP2739562A2 (en) 2014-06-11
WO2013020039A3 (en) 2013-03-21
JP2014521527A (ja) 2014-08-28
CN103732528A (zh) 2014-04-16
KR20140053263A (ko) 2014-05-07
EP2739562B1 (en) 2017-12-20
CN103732528B (zh) 2018-09-28

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