KR101924689B1 - 이차원 나노 물질의 처리 장치 및 방법 - Google Patents

이차원 나노 물질의 처리 장치 및 방법 Download PDF

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KR101924689B1
KR101924689B1 KR1020160089989A KR20160089989A KR101924689B1 KR 101924689 B1 KR101924689 B1 KR 101924689B1 KR 1020160089989 A KR1020160089989 A KR 1020160089989A KR 20160089989 A KR20160089989 A KR 20160089989A KR 101924689 B1 KR101924689 B1 KR 101924689B1
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South Korea
Prior art keywords
plasma
gas
signal
chamber wall
space
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KR1020160089989A
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English (en)
Korean (ko)
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KR20180008994A (ko
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이관형
이종영
정재환
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연세대학교 산학협력단
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Priority to KR1020160089989A priority Critical patent/KR101924689B1/ko
Priority to CN201710348246.1A priority patent/CN107622961B/zh
Publication of KR20180008994A publication Critical patent/KR20180008994A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
KR1020160089989A 2016-07-15 2016-07-15 이차원 나노 물질의 처리 장치 및 방법 KR101924689B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020160089989A KR101924689B1 (ko) 2016-07-15 2016-07-15 이차원 나노 물질의 처리 장치 및 방법
CN201710348246.1A CN107622961B (zh) 2016-07-15 2017-05-17 二维纳米物质的处理装置及其方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160089989A KR101924689B1 (ko) 2016-07-15 2016-07-15 이차원 나노 물질의 처리 장치 및 방법

Publications (2)

Publication Number Publication Date
KR20180008994A KR20180008994A (ko) 2018-01-25
KR101924689B1 true KR101924689B1 (ko) 2019-02-28

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KR1020160089989A KR101924689B1 (ko) 2016-07-15 2016-07-15 이차원 나노 물질의 처리 장치 및 방법

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KR (1) KR101924689B1 (zh)
CN (1) CN107622961B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210123981A (ko) * 2020-04-06 2021-10-14 서울대학교산학협력단 2차원 물질의 원자층 단위의 표면 처리 장치， 이를 이용한 2차원 물질의 원자층 단위의 표면 처리 방법，및 이에 의해 표면처리된 2차원 물질

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113327866B (zh) * 2020-02-28 2022-09-20 复旦大学 二维器件真空制备系统及其方法
KR102509798B1 (ko) * 2021-04-20 2023-03-14 고려대학교 산학협력단 전이금속 칼코겐 화합물 도핑 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302124A (ja) * 2008-06-10 2009-12-24 Tokyo Electron Ltd プラズマ処理装置および高周波電力供給機構
JP2011083770A (ja) * 2009-10-16 2011-04-28 Korea Inst Of Machinery & Materials 汚染物質除去用プラズマ反応器及び駆動方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5707486A (en) * 1990-07-31 1998-01-13 Applied Materials, Inc. Plasma reactor using UHF/VHF and RF triode source, and process
FR2797997B1 (fr) * 1999-08-26 2002-04-05 Cit Alcatel Procede et dispositif pour le traitement de substrat sous vide par plasma
US7708859B2 (en) * 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US20070066038A1 (en) * 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
KR101155987B1 (ko) * 2010-08-30 2012-06-18 (주) 이이시스 부하 매칭을 최적화하기 위한 대기압 플라즈마 생성용 전원 공급 장치 및 그 제어 방법
CN102486993B (zh) * 2010-12-02 2015-09-30 国家纳米科学中心 一种掺杂石墨烯的制备方法及其用途
KR102021510B1 (ko) * 2011-06-30 2019-09-16 어플라이드 머티어리얼스, 인코포레이티드 고속 가스 교환, 고속 가스 전환 및 프로그램 가능한 가스 전달을 위한 방법 및 장치
KR101274211B1 (ko) * 2011-08-24 2013-06-17 삼성전자주식회사 반도체 기판, 이를 이용한 발광소자 및 그 제조방법
CN102358614A (zh) * 2011-10-20 2012-02-22 中国科学院物理研究所 一种石墨烯纳米图案的加工方法
CN202558936U (zh) * 2012-05-23 2012-11-28 徐明生 一种规模化连续制备二维纳米薄膜的装置
JP2014049529A (ja) * 2012-08-30 2014-03-17 Tokyo Electron Ltd プラズマ処理装置及び金属の酸化膜を洗浄する方法
CN102931055B (zh) * 2012-10-10 2015-07-29 中国科学院微电子研究所 一种多层石墨烯的减薄方法
CN103021808A (zh) * 2012-11-29 2013-04-03 上海集成电路研发中心有限公司 一种制备特定边缘的石墨烯图形的方法
CN104166307A (zh) * 2014-08-14 2014-11-26 深圳市贝特瑞纳米科技有限公司 一种石墨烯薄膜的图形化方法、功能器件及其用途
WO2016093269A1 (ja) * 2014-12-12 2016-06-16 株式会社ダイヘン 高周波電源

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009302124A (ja) * 2008-06-10 2009-12-24 Tokyo Electron Ltd プラズマ処理装置および高周波電力供給機構
JP2011083770A (ja) * 2009-10-16 2011-04-28 Korea Inst Of Machinery & Materials 汚染物質除去用プラズマ反応器及び駆動方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210123981A (ko) * 2020-04-06 2021-10-14 서울대학교산학협력단 2차원 물질의 원자층 단위의 표면 처리 장치， 이를 이용한 2차원 물질의 원자층 단위의 표면 처리 방법，및 이에 의해 표면처리된 2차원 물질
KR102438687B1 (ko) 2020-04-06 2022-08-31 서울대학교산학협력단 2차원 물질의 원자층 단위의 표면 처리 장치， 이를 이용한 2차원 물질의 원자층 단위의 표면 처리 방법，및 이에 의해 표면처리된 2차원 물질

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Publication number Publication date
CN107622961A (zh) 2018-01-23
KR20180008994A (ko) 2018-01-25
CN107622961B (zh) 2021-05-25

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