KR101919226B1 - 포지티브형 감광성 수지 조성물, 광경화성 드라이 필름 및 그 제조 방법, 패턴 형성 방법, 및 적층체 - Google Patents
포지티브형 감광성 수지 조성물, 광경화성 드라이 필름 및 그 제조 방법, 패턴 형성 방법, 및 적층체 Download PDFInfo
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- KR101919226B1 KR101919226B1 KR1020170027207A KR20170027207A KR101919226B1 KR 101919226 B1 KR101919226 B1 KR 101919226B1 KR 1020170027207 A KR1020170027207 A KR 1020170027207A KR 20170027207 A KR20170027207 A KR 20170027207A KR 101919226 B1 KR101919226 B1 KR 101919226B1
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- 0 C*(c1ccc(*)cc1)=* Chemical compound C*(c1ccc(*)cc1)=* 0.000 description 16
- YFBZUWUJSCLVST-UHFFFAOYSA-N CC(C)(c1c2cccc1)OC2=O Chemical compound CC(C)(c1c2cccc1)OC2=O YFBZUWUJSCLVST-UHFFFAOYSA-N 0.000 description 2
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- CSHCXANQQQRILA-UHFFFAOYSA-N CC(CCCOC(C1C(CC(O)=O)CCCC1)=O)(c(cc1C)ccc1O)c(cc1C)ccc1O Chemical compound CC(CCCOC(C1C(CC(O)=O)CCCC1)=O)(c(cc1C)ccc1O)c(cc1C)ccc1O CSHCXANQQQRILA-UHFFFAOYSA-N 0.000 description 1
- IUUDHCAAFAFGKM-JTQLQIEISA-N C[C@@H](Cc(cccc1)c1OC(C)(C)CI)SS Chemical compound C[C@@H](Cc(cccc1)c1OC(C)(C)CI)SS IUUDHCAAFAFGKM-JTQLQIEISA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Silicon Polymers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016042250A JP6499102B2 (ja) | 2016-03-04 | 2016-03-04 | ポジ型感光性樹脂組成物、光硬化性ドライフィルム及びその製造方法、パターン形成方法、及び積層体 |
| JPJP-P-2016-042250 | 2016-03-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170103680A KR20170103680A (ko) | 2017-09-13 |
| KR101919226B1 true KR101919226B1 (ko) | 2018-11-15 |
Family
ID=58191205
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020170027207A Active KR101919226B1 (ko) | 2016-03-04 | 2017-03-02 | 포지티브형 감광성 수지 조성물, 광경화성 드라이 필름 및 그 제조 방법, 패턴 형성 방법, 및 적층체 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10197914B2 (enExample) |
| EP (1) | EP3214497B1 (enExample) |
| JP (1) | JP6499102B2 (enExample) |
| KR (1) | KR101919226B1 (enExample) |
| TW (1) | TWI624731B (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6522951B2 (ja) * | 2015-01-08 | 2019-05-29 | 信越化学工業株式会社 | シリコーン骨格含有高分子化合物、化学増幅型ネガ型レジスト材料、光硬化性ドライフィルム及びその製造方法、パターン形成方法、積層体、基板、及び半導体装置 |
| JP6874584B2 (ja) | 2017-08-09 | 2021-05-19 | 信越化学工業株式会社 | 感光性樹脂組成物、感光性樹脂皮膜、感光性ドライフィルム、積層体、及びパターン形成方法 |
| JP6866802B2 (ja) | 2017-08-09 | 2021-04-28 | 信越化学工業株式会社 | シリコーン骨格含有高分子化合物、感光性樹脂組成物、感光性樹脂皮膜、感光性ドライフィルム、積層体、及びパターン形成方法 |
| EP3747954A4 (en) * | 2018-01-31 | 2021-02-17 | Mitsubishi Gas Chemical Company, Inc. | COMPOSITION, METHOD FOR PRODUCING A RESIST PATTERN, AND METHOD FOR PRODUCING AN INSULATING FILM |
| US11319414B2 (en) * | 2018-03-22 | 2022-05-03 | Momentive Performance Materials Inc. | Silicone polymer |
| US10941251B2 (en) * | 2018-03-22 | 2021-03-09 | Momentive Performance Materials Inc. | Silicone polymer and composition comprising the same |
| JP6870657B2 (ja) | 2018-05-17 | 2021-05-12 | 信越化学工業株式会社 | 感光性樹脂組成物、感光性ドライフィルム、及びパターン形成方法 |
| JP6919626B2 (ja) * | 2018-05-17 | 2021-08-18 | 信越化学工業株式会社 | シルフェニレン骨格及びポリエーテル骨格を含むポリマー |
| US11022885B2 (en) * | 2018-08-31 | 2021-06-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photosensitive middle layer |
| KR102337564B1 (ko) * | 2018-09-28 | 2021-12-13 | 삼성에스디아이 주식회사 | 감광성 수지 조성물, 이를 이용한 감광성 수지막 및 전자 소자 |
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