KR101914895B1 - 노광 장치 및 노광 방법 - Google Patents

노광 장치 및 노광 방법 Download PDF

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Publication number
KR101914895B1
KR101914895B1 KR1020177033406A KR20177033406A KR101914895B1 KR 101914895 B1 KR101914895 B1 KR 101914895B1 KR 1020177033406 A KR1020177033406 A KR 1020177033406A KR 20177033406 A KR20177033406 A KR 20177033406A KR 101914895 B1 KR101914895 B1 KR 101914895B1
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KR
South Korea
Prior art keywords
optical system
illumination
light
incident
substrate
Prior art date
Application number
KR1020177033406A
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English (en)
Korean (ko)
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KR20170130628A (ko
Inventor
마사토 구마자와
Original Assignee
가부시키가이샤 니콘
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Publication of KR20170130628A publication Critical patent/KR20170130628A/ko
Application granted granted Critical
Publication of KR101914895B1 publication Critical patent/KR101914895B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020177033406A 2012-07-13 2013-03-26 노광 장치 및 노광 방법 KR101914895B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2012157810 2012-07-13
JP2012157811 2012-07-13
JPJP-P-2012-157810 2012-07-13
JPJP-P-2012-157811 2012-07-13
PCT/JP2013/058704 WO2014010274A1 (ja) 2012-07-13 2013-03-26 基板処理装置、及びデバイス製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020157000057A Division KR101880792B1 (ko) 2012-07-13 2013-03-26 기판 처리 장치 및 디바이스 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187031201A Division KR102007616B1 (ko) 2012-07-13 2013-03-26 노광 장치 및 노광 방법

Publications (2)

Publication Number Publication Date
KR20170130628A KR20170130628A (ko) 2017-11-28
KR101914895B1 true KR101914895B1 (ko) 2018-11-02

Family

ID=49915752

Family Applications (4)

Application Number Title Priority Date Filing Date
KR1020177033406A KR101914895B1 (ko) 2012-07-13 2013-03-26 노광 장치 및 노광 방법
KR1020157000057A KR101880792B1 (ko) 2012-07-13 2013-03-26 기판 처리 장치 및 디바이스 제조 방법
KR1020197022337A KR102096891B1 (ko) 2012-07-13 2013-03-26 디바이스 제조 방법
KR1020187031201A KR102007616B1 (ko) 2012-07-13 2013-03-26 노광 장치 및 노광 방법

Family Applications After (3)

Application Number Title Priority Date Filing Date
KR1020157000057A KR101880792B1 (ko) 2012-07-13 2013-03-26 기판 처리 장치 및 디바이스 제조 방법
KR1020197022337A KR102096891B1 (ko) 2012-07-13 2013-03-26 디바이스 제조 방법
KR1020187031201A KR102007616B1 (ko) 2012-07-13 2013-03-26 노광 장치 및 노광 방법

Country Status (5)

Country Link
JP (6) JP6137182B2 (zh)
KR (4) KR101914895B1 (zh)
CN (4) CN105652609B (zh)
HK (2) HK1207161A1 (zh)
WO (1) WO2014010274A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
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CN105652609B (zh) * 2012-07-13 2018-12-04 株式会社尼康 曝光装置及曝光方法
CN103984209B (zh) * 2014-04-04 2016-08-17 中国科学院上海光学精密机械研究所 折反射式光刻照明中继镜组
KR102075755B1 (ko) * 2017-06-19 2020-02-10 에스케이텔레콤 주식회사 영상 투사 장치를 위한 조명 광학계 및 그 구성 방법
KR102439935B1 (ko) * 2018-02-27 2022-09-02 가부시키가이샤 오크세이사쿠쇼 투영 노광 장치
JP7145620B2 (ja) * 2018-02-27 2022-10-03 株式会社オーク製作所 投影露光装置
CN114070971A (zh) * 2020-07-27 2022-02-18 奥林巴斯株式会社 观察装置、光偏转单元、像形成方法
CN112013954A (zh) * 2020-09-08 2020-12-01 中国科学院西安光学精密机械研究所 一种基于曲面棱镜的offner高光谱成像系统

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JP2008076650A (ja) 2006-09-20 2008-04-03 Nikon Corp マスク、露光装置及び露光方法、並びにデバイス製造方法
JP2011221538A (ja) 2010-04-13 2011-11-04 Nikon Corp マスクケース、マスクユニット、露光装置、基板処理装置及びデバイス製造方法

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JP2003295062A (ja) 2003-03-10 2003-10-15 Nikon Corp 反射屈折型結像光学系
JP2008076650A (ja) 2006-09-20 2008-04-03 Nikon Corp マスク、露光装置及び露光方法、並びにデバイス製造方法
JP2011221538A (ja) 2010-04-13 2011-11-04 Nikon Corp マスクケース、マスクユニット、露光装置、基板処理装置及びデバイス製造方法

Also Published As

Publication number Publication date
KR102007616B1 (ko) 2019-08-05
JP6137356B2 (ja) 2017-05-31
KR20170130628A (ko) 2017-11-28
KR101880792B1 (ko) 2018-07-20
JP6519694B2 (ja) 2019-05-29
CN104428715B (zh) 2017-06-30
CN105652609A (zh) 2016-06-08
KR20180120800A (ko) 2018-11-06
CN105652609B (zh) 2018-12-04
CN107272348B (zh) 2020-04-07
HK1207161A1 (zh) 2016-01-22
JP2017068289A (ja) 2017-04-06
JP6245342B2 (ja) 2017-12-13
CN107272348A (zh) 2017-10-20
KR102096891B1 (ko) 2020-04-03
CN107229190B (zh) 2020-03-20
JPWO2014010274A1 (ja) 2016-06-20
CN104428715A (zh) 2015-03-18
JP6350687B2 (ja) 2018-07-04
JP2017037347A (ja) 2017-02-16
WO2014010274A1 (ja) 2014-01-16
JP6137182B2 (ja) 2017-05-31
KR20190091574A (ko) 2019-08-06
JP2016122202A (ja) 2016-07-07
KR20150035991A (ko) 2015-04-07
JP6128240B2 (ja) 2017-05-17
HK1221778A1 (zh) 2017-06-09
JP2016085475A (ja) 2016-05-19
JP2018136577A (ja) 2018-08-30
CN107229190A (zh) 2017-10-03

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