HK1207161A1 - 襯底處理裝置及器件製造方法 - Google Patents

襯底處理裝置及器件製造方法

Info

Publication number
HK1207161A1
HK1207161A1 HK15107656.3A HK15107656A HK1207161A1 HK 1207161 A1 HK1207161 A1 HK 1207161A1 HK 15107656 A HK15107656 A HK 15107656A HK 1207161 A1 HK1207161 A1 HK 1207161A1
Authority
HK
Hong Kong
Prior art keywords
substrate treatment
treatment device
manufacturing
device manufacturing
substrate
Prior art date
Application number
HK15107656.3A
Other languages
English (en)
Inventor
熊澤雅人
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of HK1207161A1 publication Critical patent/HK1207161A1/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/24—Curved surfaces
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70316—Details of optical elements, e.g. of Bragg reflectors, extreme ultraviolet [EUV] multilayer or bilayer mirrors or diffractive optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Microscoopes, Condenser (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
HK15107656.3A 2012-07-13 2015-08-08 襯底處理裝置及器件製造方法 HK1207161A1 (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012157811 2012-07-13
JP2012157810 2012-07-13
PCT/JP2013/058704 WO2014010274A1 (ja) 2012-07-13 2013-03-26 基板処理装置、及びデバイス製造方法

Publications (1)

Publication Number Publication Date
HK1207161A1 true HK1207161A1 (zh) 2016-01-22

Family

ID=49915752

Family Applications (2)

Application Number Title Priority Date Filing Date
HK16109756.7A HK1221778A1 (zh) 2012-07-13 2015-08-08 曝光裝置及曝光方法
HK15107656.3A HK1207161A1 (zh) 2012-07-13 2015-08-08 襯底處理裝置及器件製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
HK16109756.7A HK1221778A1 (zh) 2012-07-13 2015-08-08 曝光裝置及曝光方法

Country Status (5)

Country Link
JP (6) JP6137182B2 (zh)
KR (4) KR102096891B1 (zh)
CN (4) CN105652609B (zh)
HK (2) HK1221778A1 (zh)
WO (1) WO2014010274A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105652609B (zh) * 2012-07-13 2018-12-04 株式会社尼康 曝光装置及曝光方法
CN103984209B (zh) * 2014-04-04 2016-08-17 中国科学院上海光学精密机械研究所 折反射式光刻照明中继镜组
KR102075755B1 (ko) * 2017-06-19 2020-02-10 에스케이텔레콤 주식회사 영상 투사 장치를 위한 조명 광학계 및 그 구성 방법
KR102439935B1 (ko) * 2018-02-27 2022-09-02 가부시키가이샤 오크세이사쿠쇼 투영 노광 장치
JP7145620B2 (ja) * 2018-02-27 2022-10-03 株式会社オーク製作所 投影露光装置
CN114070971A (zh) * 2020-07-27 2022-02-18 奥林巴斯株式会社 观察装置、光偏转单元、像形成方法
CN112013954B (zh) * 2020-09-08 2024-08-02 中国科学院西安光学精密机械研究所 一种基于曲面棱镜的offner高光谱成像系统

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6018383A (en) * 1997-08-20 2000-01-25 Anvik Corporation Very large area patterning system for flexible substrates
JP2001085314A (ja) * 1999-09-13 2001-03-30 Nikon Corp 露光方法及び装置、デバイスの製造方法、及び露光装置の製造方法
JP2004061584A (ja) * 2002-07-25 2004-02-26 Fuji Photo Film Co Ltd 平版印刷版の製版方法
JP2003295062A (ja) * 2003-03-10 2003-10-15 Nikon Corp 反射屈折型結像光学系
CN100508119C (zh) * 2003-07-09 2009-07-01 株式会社尼康 曝光装置、器件制造方法
KR100550560B1 (ko) * 2003-12-16 2006-02-10 전자부품연구원 패턴 제작 장치 및 그 방법
US7102733B2 (en) * 2004-08-13 2006-09-05 Asml Holding N.V. System and method to compensate for static and dynamic misalignments and deformations in a maskless lithography tool
JP2006098719A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 露光装置
JP4893310B2 (ja) * 2004-10-26 2012-03-07 株式会社ニコン 光学装置、鏡筒、露光装置、及びデバイスの製造方法
JP4251158B2 (ja) * 2005-06-24 2009-04-08 パナソニック電工株式会社 充電器およびそれを用いる電動工具セット
JP2007227438A (ja) * 2006-02-21 2007-09-06 Nikon Corp 露光装置及び方法並びに光露光用マスク
US7936445B2 (en) * 2006-06-19 2011-05-03 Asml Netherlands B.V. Altering pattern data based on measured optical element characteristics
KR101422298B1 (ko) * 2006-09-08 2014-08-13 가부시키가이샤 니콘 마스크, 노광 장치, 노광 방법 및 그 노광 장치 또는 노광 방법을 이용한 디바이스 제조 방법
JP5181451B2 (ja) * 2006-09-20 2013-04-10 株式会社ニコン マスク、露光装置及び露光方法、並びにデバイス製造方法
WO2008129819A1 (ja) 2007-04-13 2008-10-30 Nikon Corporation 表示素子の製造方法、表示素子の製造装置、及び表示素子
JP5272348B2 (ja) * 2007-08-14 2013-08-28 株式会社ニコン ウェハ接合装置
NL1036558A1 (nl) * 2008-03-25 2009-09-28 Asml Netherlands Bv Method and lithographic apparatus for acquiring height data relating to a substrate surface.
JP5282895B2 (ja) * 2009-03-06 2013-09-04 株式会社ニコン 露光装置、露光方法、およびデバイス製造方法
US8264666B2 (en) * 2009-03-13 2012-09-11 Nikon Corporation Exposure apparatus, exposure method, and method of manufacturing device
JP2011221536A (ja) * 2010-04-13 2011-11-04 Nikon Corp マスク移動装置、露光装置、基板処理装置及びデバイス製造方法
JP5724564B2 (ja) 2010-04-13 2015-05-27 株式会社ニコン マスクケース、マスクユニット、露光装置、基板処理装置及びデバイス製造方法
WO2013094286A1 (ja) * 2011-12-20 2013-06-27 株式会社ニコン 基板処理装置、デバイス製造システム、及びデバイス製造方法
CN105652609B (zh) * 2012-07-13 2018-12-04 株式会社尼康 曝光装置及曝光方法

Also Published As

Publication number Publication date
WO2014010274A1 (ja) 2014-01-16
CN107229190B (zh) 2020-03-20
JP2017037347A (ja) 2017-02-16
JP6137356B2 (ja) 2017-05-31
JP6137182B2 (ja) 2017-05-31
KR101914895B1 (ko) 2018-11-02
CN107229190A (zh) 2017-10-03
CN107272348B (zh) 2020-04-07
HK1221778A1 (zh) 2017-06-09
JP2017068289A (ja) 2017-04-06
KR102096891B1 (ko) 2020-04-03
JP2016085475A (ja) 2016-05-19
JP2018136577A (ja) 2018-08-30
KR20180120800A (ko) 2018-11-06
KR102007616B1 (ko) 2019-08-05
JP6350687B2 (ja) 2018-07-04
KR20190091574A (ko) 2019-08-06
JP6245342B2 (ja) 2017-12-13
CN104428715B (zh) 2017-06-30
JP2016122202A (ja) 2016-07-07
JP6128240B2 (ja) 2017-05-17
CN104428715A (zh) 2015-03-18
KR20150035991A (ko) 2015-04-07
JPWO2014010274A1 (ja) 2016-06-20
CN105652609B (zh) 2018-12-04
CN105652609A (zh) 2016-06-08
KR20170130628A (ko) 2017-11-28
JP6519694B2 (ja) 2019-05-29
KR101880792B1 (ko) 2018-07-20
CN107272348A (zh) 2017-10-20

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20220328