KR101913525B1 - 단일 결합 직렬 및 병렬 콘덴서 구성요소를 구비하는 출력 정합 회로망 - Google Patents

단일 결합 직렬 및 병렬 콘덴서 구성요소를 구비하는 출력 정합 회로망 Download PDF

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KR101913525B1
KR101913525B1 KR1020177013715A KR20177013715A KR101913525B1 KR 101913525 B1 KR101913525 B1 KR 101913525B1 KR 1020177013715 A KR1020177013715 A KR 1020177013715A KR 20177013715 A KR20177013715 A KR 20177013715A KR 101913525 B1 KR101913525 B1 KR 101913525B1
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South Korea
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substrate
output
disposed
capacitor
transmission line
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KR1020177013715A
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Korean (ko)
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KR20170072297A (ko
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발레리 에스. 카퍼
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레이던 컴퍼니
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/383—Impedance-matching networks comprising distributed impedance elements together with lumped impedance elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6661—High-frequency adaptations for passive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48265—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being a discrete passive component
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/142—HF devices
    • H01L2924/1421—RF devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
    • H01L2924/19104—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020177013715A 2014-10-31 2015-09-18 단일 결합 직렬 및 병렬 콘덴서 구성요소를 구비하는 출력 정합 회로망 KR101913525B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/529,996 US9419580B2 (en) 2014-10-31 2014-10-31 Output matching network having a single combined series and shunt capacitor component
US14/529,996 2014-10-31
PCT/US2015/050892 WO2016069134A1 (fr) 2014-10-31 2015-09-18 Réseau d'adaptation de sortie ayant un seul composant condensateur combiné en série et shunt

Publications (2)

Publication Number Publication Date
KR20170072297A KR20170072297A (ko) 2017-06-26
KR101913525B1 true KR101913525B1 (ko) 2018-12-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177013715A KR101913525B1 (ko) 2014-10-31 2015-09-18 단일 결합 직렬 및 병렬 콘덴서 구성요소를 구비하는 출력 정합 회로망

Country Status (7)

Country Link
US (1) US9419580B2 (fr)
EP (1) EP3213411B1 (fr)
JP (1) JP6526192B2 (fr)
KR (1) KR101913525B1 (fr)
CN (1) CN107005204B (fr)
TW (1) TWI569576B (fr)
WO (1) WO2016069134A1 (fr)

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WO2018009314A1 (fr) * 2016-07-05 2018-01-11 Raytheon Company Circuit intégré monolithique hyperfréquence (mmic) amplifié ayant une section de suppression des oscillations avec un trou d'interconnexion résistif
US11894322B2 (en) 2018-05-29 2024-02-06 Analog Devices, Inc. Launch structures for radio frequency integrated device packages
US11424196B2 (en) 2018-06-01 2022-08-23 Analog Devices, Inc. Matching circuit for integrated circuit die
US11417615B2 (en) * 2018-11-27 2022-08-16 Analog Devices, Inc. Transition circuitry for integrated circuit die
CN110970359B (zh) * 2019-11-27 2022-06-14 福建省福联集成电路有限公司 一种具有支撑架的空气桥及制作方法
US20220334197A1 (en) * 2021-03-26 2022-10-20 Advanced Energy Industries, Inc. Estimation of remaining life of system components
US11744021B2 (en) 2022-01-21 2023-08-29 Analog Devices, Inc. Electronic assembly

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US3764932A (en) 1972-10-10 1973-10-09 Collins Radio Co Rf power amplifier
US4476446A (en) 1981-08-25 1984-10-09 Raytheon Company Impedance matching network for field effect transistor
JPS6070754A (ja) * 1983-09-27 1985-04-22 Omron Tateisi Electronics Co 混成集積回路の製造方法
US4969032A (en) * 1988-07-18 1990-11-06 Motorola Inc. Monolithic microwave integrated circuit having vertically stacked components
TW473882B (en) * 1998-07-06 2002-01-21 Hitachi Ltd Semiconductor device
US6191666B1 (en) * 1999-03-25 2001-02-20 Industrial Technology Research Institute Miniaturized multi-layer ceramic lowpass filter
JP3680794B2 (ja) * 1999-07-29 2005-08-10 Ｔｄｋ株式会社 パワーアンプ内蔵型アイソレータ装置
WO2002058149A1 (fr) 2001-01-18 2002-07-25 Koninklijke Philips Electronics N.V. Transistor de puissance hf a etages d'adaptation passe-bas et bande passante en combinaison interne
US6792299B2 (en) * 2001-03-21 2004-09-14 Conductus, Inc. Device approximating a shunt capacitor for strip-line-type circuits
JP3853604B2 (ja) * 2001-04-04 2006-12-06 松下電器産業株式会社 周波数変換回路
EP1490907A1 (fr) * 2002-03-21 2004-12-29 Koninklijke Philips Electronics N.V. Dispositif amplificateur de puissance
JP2004128333A (ja) * 2002-10-04 2004-04-22 Shinko Electric Ind Co Ltd 薄膜コンデンサ装置、その実装モジュール及び製造方法
CN100490154C (zh) * 2006-02-21 2009-05-20 联华电子股份有限公司 电容器结构
US8159312B2 (en) * 2007-06-27 2012-04-17 Medrelief Inc. Method and system for signal coupling and direct current blocking
US7834456B2 (en) * 2009-01-20 2010-11-16 Raytheon Company Electrical contacts for CMOS devices and III-V devices formed on a silicon substrate
US8299856B2 (en) 2010-12-20 2012-10-30 Infineon Technologies Ag Power transistor output match network with high Q RF path and low Q low frequency path
GB201105912D0 (en) 2011-04-07 2011-05-18 Diamond Microwave Devices Ltd Improved matching techniques for power transistors
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WO2013154013A1 (fr) * 2012-04-12 2013-10-17 株式会社村田製作所 Amplificateur de puissance
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Also Published As

Publication number Publication date
EP3213411A1 (fr) 2017-09-06
EP3213411B1 (fr) 2019-07-17
JP2017533662A (ja) 2017-11-09
JP6526192B2 (ja) 2019-06-05
CN107005204A (zh) 2017-08-01
US20160126920A1 (en) 2016-05-05
TWI569576B (zh) 2017-02-01
WO2016069134A1 (fr) 2016-05-06
US9419580B2 (en) 2016-08-16
CN107005204B (zh) 2020-06-16
KR20170072297A (ko) 2017-06-26
TW201630342A (zh) 2016-08-16

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