JP2017533662A - 単一の直列キャパシタ及び分路キャパシタ構成要素を結合した出力整合ネットワーク - Google Patents
単一の直列キャパシタ及び分路キャパシタ構成要素を結合した出力整合ネットワーク Download PDFInfo
- Publication number
- JP2017533662A JP2017533662A JP2017523377A JP2017523377A JP2017533662A JP 2017533662 A JP2017533662 A JP 2017533662A JP 2017523377 A JP2017523377 A JP 2017523377A JP 2017523377 A JP2017523377 A JP 2017523377A JP 2017533662 A JP2017533662 A JP 2017533662A
- Authority
- JP
- Japan
- Prior art keywords
- capacitor
- substrate
- output
- shunt
- matching network
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 125
- 230000000903 blocking effect Effects 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims description 53
- 230000005540 biological transmission Effects 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 29
- 239000004020 conductor Substances 0.000 claims description 27
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000009466 transformation Effects 0.000 description 10
- 238000003780 insertion Methods 0.000 description 7
- 230000037431 insertion Effects 0.000 description 7
- 230000003071 parasitic effect Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
- H03H7/383—Impedance-matching networks comprising distributed impedance elements together with lumped impedance elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
- H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48265—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being a discrete passive component
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
- H01L2924/142—HF devices
- H01L2924/1421—RF devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
- H01L2924/19104—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (3)
- 半導体構造体であって:
トランジスタへの出力でのインピーダンスを負荷へ変換することにおいて所定の分路キャパシタンスを要求する整合ネットワークを含み、
前記整合ネットワークが、垂直に積んだ、所定の分路キャパシタンス全体をもたらす分路キャパシタと、直列DCブロッキングキャパシタと、を有する、
半導体構造体。 - 半導体構造体であって:
基板であり、当該基板の頂部表面の第1部分に配置された半導体と、当該基板の底部表面上の接地導電体と、を有する基板;及び
前記半導体内に形成されたトランジスタへの出力でのインピーダンスを負荷へ変換することにおいて所定の分路キャパシタンスを要求する整合ネットワークであり、垂直に積んだ、所定の分路キャパシタンス全体をもたらす分路キャパシタと、前記トランジスタに結合された直流バイアス電圧源からの直流をブロッキングするための直列DCブロッキングキャパシタと、を有する整合ネットワーク;
を有する半導体構造体。 - 基板であり、当該基板の頂部表面の第1部分に配置された半導体と、当該基板の底部表面上の接地平面導電体と、を有する基板;及び
トランジスタへの出力でのインピーダンスを負荷へ変換することにおいて所定の分路キャパシタンスを要求する整合ネットワーク;
を有する半導体構造体であって:
前記整合ネットワークが、
半導体層内に形成されたトランジスタデバイスの出力、及び直流バイアス電源への接続のためのバイアス端子に結合するための、前記基板の上に配置された入力伝送ラインと、
前記負荷へ結合するようにされた出力を有する、前記基板の上に配置された出力伝送ラインと、
前記入力伝送ラインのストリップ導電体に結合された、前記基板の前記頂部表面の第2部分上に配置された第1導電層と、
前記第1導電層の上に配置された誘電層と、
前記誘電層の上に配置され、前記出力伝送ラインのストリップ導電体に結合された第2導電層と、
を有し、
前記第1導電層、前記誘電層及び前記第2導電層が、第1キャパシタを形成し、
前記第2導電層及び前記接地平面導電体の下部が、第2キャパシタを形成し、
前記第2キャパシタが、トランジスタへの出力でのインピーダンスを前記負荷へ変換することにおいて要求される前記所定の分路キャパシタンスをもたらし、かつ
前記第1キャパシタが、前記直流バイアス電源から前記出力伝送ラインへの直流をブロッキングする、
半導体構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/529,996 US9419580B2 (en) | 2014-10-31 | 2014-10-31 | Output matching network having a single combined series and shunt capacitor component |
US14/529,996 | 2014-10-31 | ||
PCT/US2015/050892 WO2016069134A1 (en) | 2014-10-31 | 2015-09-18 | Output matching network having a single combined series and shunt capacitor component |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017533662A true JP2017533662A (ja) | 2017-11-09 |
JP6526192B2 JP6526192B2 (ja) | 2019-06-05 |
Family
ID=54207816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017523377A Active JP6526192B2 (ja) | 2014-10-31 | 2015-09-18 | 単一の直列キャパシタ及び分路キャパシタ構成要素を結合した出力整合ネットワーク |
Country Status (7)
Country | Link |
---|---|
US (1) | US9419580B2 (ja) |
EP (1) | EP3213411B1 (ja) |
JP (1) | JP6526192B2 (ja) |
KR (1) | KR101913525B1 (ja) |
CN (1) | CN107005204B (ja) |
TW (1) | TWI569576B (ja) |
WO (1) | WO2016069134A1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3482494A1 (en) * | 2016-07-05 | 2019-05-15 | Raytheon Company | Microwave monolithic integrated circuit (mmic) amplified having de-q'ing section with resistive via |
US11894322B2 (en) | 2018-05-29 | 2024-02-06 | Analog Devices, Inc. | Launch structures for radio frequency integrated device packages |
US11424196B2 (en) | 2018-06-01 | 2022-08-23 | Analog Devices, Inc. | Matching circuit for integrated circuit die |
US11417615B2 (en) * | 2018-11-27 | 2022-08-16 | Analog Devices, Inc. | Transition circuitry for integrated circuit die |
CN110970359B (zh) * | 2019-11-27 | 2022-06-14 | 福建省福联集成电路有限公司 | 一种具有支撑架的空气桥及制作方法 |
EP4314965A1 (en) * | 2021-03-26 | 2024-02-07 | AES Global Holdings, Pte. Ltd. | Estimation of remaining life of system components |
US11744021B2 (en) | 2022-01-21 | 2023-08-29 | Analog Devices, Inc. | Electronic assembly |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6070754A (ja) * | 1983-09-27 | 1985-04-22 | Omron Tateisi Electronics Co | 混成集積回路の製造方法 |
WO2001010047A1 (en) * | 1999-07-29 | 2001-02-08 | Tdk Corporation | Isolator with built-in power amplifier |
JP2004128333A (ja) * | 2002-10-04 | 2004-04-22 | Shinko Electric Ind Co Ltd | 薄膜コンデンサ装置、その実装モジュール及び製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3764932A (en) | 1972-10-10 | 1973-10-09 | Collins Radio Co | Rf power amplifier |
US4476446A (en) | 1981-08-25 | 1984-10-09 | Raytheon Company | Impedance matching network for field effect transistor |
US4969032A (en) * | 1988-07-18 | 1990-11-06 | Motorola Inc. | Monolithic microwave integrated circuit having vertically stacked components |
TW473882B (en) * | 1998-07-06 | 2002-01-21 | Hitachi Ltd | Semiconductor device |
US6191666B1 (en) * | 1999-03-25 | 2001-02-20 | Industrial Technology Research Institute | Miniaturized multi-layer ceramic lowpass filter |
WO2002058149A1 (en) | 2001-01-18 | 2002-07-25 | Koninklijke Philips Electronics N.V. | Power transistor with internally combined low-pass and band-pass matching stages |
US6792299B2 (en) * | 2001-03-21 | 2004-09-14 | Conductus, Inc. | Device approximating a shunt capacitor for strip-line-type circuits |
JP3853604B2 (ja) * | 2001-04-04 | 2006-12-06 | 松下電器産業株式会社 | 周波数変換回路 |
WO2003081670A1 (en) * | 2002-03-21 | 2003-10-02 | Koninklijke Philips Electronics N.V. | Power amplifier device |
CN100490154C (zh) * | 2006-02-21 | 2009-05-20 | 联华电子股份有限公司 | 电容器结构 |
US8159312B2 (en) * | 2007-06-27 | 2012-04-17 | Medrelief Inc. | Method and system for signal coupling and direct current blocking |
US7834456B2 (en) * | 2009-01-20 | 2010-11-16 | Raytheon Company | Electrical contacts for CMOS devices and III-V devices formed on a silicon substrate |
US8299856B2 (en) | 2010-12-20 | 2012-10-30 | Infineon Technologies Ag | Power transistor output match network with high Q RF path and low Q low frequency path |
GB201105912D0 (en) * | 2011-04-07 | 2011-05-18 | Diamond Microwave Devices Ltd | Improved matching techniques for power transistors |
FR2981365B1 (fr) | 2011-10-14 | 2018-01-12 | Constellium Issoire | Procede de transformation ameliore de toles en alliage al-cu-li |
WO2013154013A1 (ja) * | 2012-04-12 | 2013-10-17 | 株式会社村田製作所 | 電力増幅器 |
CN103236821B (zh) * | 2013-04-26 | 2015-12-02 | 中国科学技术大学 | 一种基于可调负阻结构的多模多通道混频器 |
-
2014
- 2014-10-31 US US14/529,996 patent/US9419580B2/en active Active
-
2015
- 2015-09-18 WO PCT/US2015/050892 patent/WO2016069134A1/en active Application Filing
- 2015-09-18 EP EP15771449.4A patent/EP3213411B1/en active Active
- 2015-09-18 KR KR1020177013715A patent/KR101913525B1/ko active IP Right Grant
- 2015-09-18 JP JP2017523377A patent/JP6526192B2/ja active Active
- 2015-09-18 CN CN201580065229.6A patent/CN107005204B/zh active Active
- 2015-10-01 TW TW104132409A patent/TWI569576B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6070754A (ja) * | 1983-09-27 | 1985-04-22 | Omron Tateisi Electronics Co | 混成集積回路の製造方法 |
WO2001010047A1 (en) * | 1999-07-29 | 2001-02-08 | Tdk Corporation | Isolator with built-in power amplifier |
JP2004128333A (ja) * | 2002-10-04 | 2004-04-22 | Shinko Electric Ind Co Ltd | 薄膜コンデンサ装置、その実装モジュール及び製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20170072297A (ko) | 2017-06-26 |
TWI569576B (zh) | 2017-02-01 |
US20160126920A1 (en) | 2016-05-05 |
KR101913525B1 (ko) | 2018-12-28 |
WO2016069134A1 (en) | 2016-05-06 |
US9419580B2 (en) | 2016-08-16 |
CN107005204A (zh) | 2017-08-01 |
EP3213411B1 (en) | 2019-07-17 |
CN107005204B (zh) | 2020-06-16 |
EP3213411A1 (en) | 2017-09-06 |
TW201630342A (zh) | 2016-08-16 |
JP6526192B2 (ja) | 2019-06-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6526192B2 (ja) | 単一の直列キャパシタ及び分路キャパシタ構成要素を結合した出力整合ネットワーク | |
JP4206589B2 (ja) | 分布増幅器 | |
JP5009500B2 (ja) | Rfパワーデバイス及びrfパワートランジスタデバイスにおける直線性を改善する方法 | |
TWI524511B (zh) | 化合物半導體積體電路 | |
US20070230090A1 (en) | Capacitor and electronic circuit | |
CN110581690A (zh) | 具有短截线电路的放大器和放大器模块 | |
CN110176909B (zh) | 功率放大器 | |
KR100381685B1 (ko) | 리액티브보상전력트랜지스터회로 | |
US8421537B2 (en) | Electronic circuit | |
US4975659A (en) | Amplifier package using vertical power transistors with ungrounded common terminals | |
US7423490B2 (en) | Wideband high frequency chokes | |
JP3004882B2 (ja) | スパイラルインダクタ、マイクロ波増幅回路およびマイクロ波増幅装置 | |
US11522506B2 (en) | Compact RFIC with stacked inductor and capacitor | |
KR20140001102A (ko) | 소형의 바이어스 티 | |
JP5661707B2 (ja) | 化合物半導体集積回路 | |
JPH02288409A (ja) | 抵抗帰還型増幅器 | |
US11984413B2 (en) | High-frequency power transistor and high-frequency power amplifier | |
EP3937376B1 (en) | Push-pull class e amplifier | |
Elarbi et al. | Efficient implementation of a power amplifier stability circuit in LTCC | |
US20130049873A1 (en) | System and method for providing improved impedance matching to rf power transistor using shunt inductance | |
JPS6036882Y2 (ja) | 超高周波半導体装置用インピ−ダンス整合回路 | |
Moez et al. | Area-efficient CMOS distributed amplifier using compact CMOS interconnects | |
JPH11191718A (ja) | 半導体装置とその製造方法 | |
JPH02284457A (ja) | コンデンサ及び該コンデンサを備えた半導体集積回路 | |
TW200919955A (en) | Arrangement for reducing interference |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170627 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180731 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181024 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190402 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190507 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6526192 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |