KR101909546B1 - Ｅｕｖ 광원의 광학 세정 시스템 및 방법 - Google Patents

Ｅｕｖ 광원의 광학 세정 시스템 및 방법 Download PDF

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KR101909546B1
KR101909546B1 KR1020137026037A KR20137026037A KR101909546B1 KR 101909546 B1 KR101909546 B1 KR 101909546B1 KR 1020137026037 A KR1020137026037 A KR 1020137026037A KR 20137026037 A KR20137026037 A KR 20137026037A KR 101909546 B1 KR101909546 B1 KR 101909546B1
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laser
radiator
optical
plasma
euv
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KR20140023917A (ko
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알렉산더 엔. 바이카노프
데아 실비아 데
알렉산더 아이. 얼쇼프
블라디미르 비. 플레로프
이고르 브이. 포멘코프
윌리엄 엔. 파틀로
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에이에스엠엘 네델란즈 비.브이.
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
KR1020137026037A 2011-03-02 2012-02-21 Ｅｕｖ 광원의 광학 세정 시스템 및 방법 Active KR101909546B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161464278P 2011-03-02 2011-03-02
US61/464,278 2011-03-02
US13/088,166 2011-04-15
US13/088,166 US8633459B2 (en) 2011-03-02 2011-04-15 Systems and methods for optics cleaning in an EUV light source
PCT/US2012/025963 WO2012118644A1 (en) 2011-03-02 2012-02-21 Systems and methods for optics cleaning in an euv light source

Publications (2)

Publication Number Publication Date
KR20140023917A KR20140023917A (ko) 2014-02-27
KR101909546B1 true KR101909546B1 (ko) 2018-10-18

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Country Link
US (2) US8633459B2 (https=)
EP (1) EP2681164A4 (https=)
JP (1) JP5819993B2 (https=)
KR (1) KR101909546B1 (https=)
TW (1) TWI573495B (https=)
WO (1) WO2012118644A1 (https=)

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US11979971B2 (en) * 2018-06-29 2024-05-07 Taiwan Semiconductor Manufacturing Company, Ltd. EUV light source and apparatus for lithography
JP6913060B2 (ja) * 2018-07-24 2021-08-04 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法
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US11259394B2 (en) * 2019-11-01 2022-02-22 Kla Corporation Laser produced plasma illuminator with liquid sheet jet target
DE102020202179A1 (de) * 2020-02-20 2021-08-26 Carl Zeiss Smt Gmbh Optische Anordnung für die EUV-Lithographie und Verfahren zum Bestimmen eines Soll-Werts eines Ziel-Plasmaparameters
CN112382915A (zh) * 2020-11-23 2021-02-19 中国科学院上海光学精密机械研究所 一种突发模式脉冲提升lpp-euv光源功率的方法
TWI785447B (zh) * 2020-12-29 2022-12-01 台灣積體電路製造股份有限公司 極紫外光設備與其運作方法
US11543757B2 (en) * 2021-04-20 2023-01-03 Kla Corporation System and method for optical-path coupling of light for in-situ photochemical cleaning in projection imaging systems
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Also Published As

Publication number Publication date
JP2014510404A (ja) 2014-04-24
JP5819993B2 (ja) 2015-11-24
US9000404B2 (en) 2015-04-07
KR20140023917A (ko) 2014-02-27
TW201244549A (en) 2012-11-01
EP2681164A1 (en) 2014-01-08
EP2681164A4 (en) 2014-09-03
US20140110609A1 (en) 2014-04-24
US20120223256A1 (en) 2012-09-06
TWI573495B (zh) 2017-03-01
WO2012118644A1 (en) 2012-09-07
US8633459B2 (en) 2014-01-21

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