KR101906509B1 - Bonding device and bonding method - Google Patents
Bonding device and bonding method Download PDFInfo
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- KR101906509B1 KR101906509B1 KR1020147014634A KR20147014634A KR101906509B1 KR 101906509 B1 KR101906509 B1 KR 101906509B1 KR 1020147014634 A KR1020147014634 A KR 1020147014634A KR 20147014634 A KR20147014634 A KR 20147014634A KR 101906509 B1 KR101906509 B1 KR 101906509B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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Abstract
In-plane error of the total thickness of the laminated body after bonding by the inexpensive apparatus constitution is improved. A second original plate W2 supported on the stage 50 and centered on the first original plate W1 uniformly coated with an adhesive is supported so as to face the first original plate W1 and the second original plate W2, The first original plate W1 and the second original plate W2 are bonded by pressing the upper surface of the second original plate W2 with an equal force by the pressurizing original plate 60 centered on the original plate W2, . The diameter dimension of the pressure disk 60 is set to a dimension at which optimization of the concave-convex shape mode shown in the thickness profile of the circular laminate in the radial direction can be achieved.
Description
The present invention relates to a joining apparatus and a joining method for joining two discs together to form a disc laminate, and more particularly, to a joining apparatus and a joining method for joining two discs to each other by means of surface grinding (polishing) In the process of thinning a circular workpiece such as a semiconductor substrate, a circular support body having substantially the same diameter as that of the circular workpiece is previously cut off from the center To a joining apparatus and a joining method for joining together after fitting and angle fitting.
In a semiconductor three-dimensional lamination process represented by a TSV (Through Silicon Via) process, it is indispensable to flatten a circular workpiece such as a semiconductor substrate by planar grinding or polishing. For thinning, for example, a silicon wafer having a diameter of 300 mm is required to have a thickness of 30 to 50 占 퐉. A circular workpiece having an extremely thin thickness with respect to a plane dimension in this manner has a rigidity in which a planar shape is maintained as a single object by its internal stress and its own weight I can not. Therefore, as described in Patent Document 1, the circular support body is previously bonded to the non-machined surface side (non-machined surface side) of the circular workpiece through the adhesive agent in the front stage of the planar grinding / .
In this joining step, a liquid adhesive agent (liquid adhesive agent) is uniformly applied to the entire surface of the circular workpiece before the flake processing (flake processing) is performed on the unprocessed surface side or the circular support surface of the circular support body. As the adhesive, a thermosetting resin (thermosetting resin) and a UV-curing resin are generally used, and they can be fixed by heat treatment after the bonding and UV irradiation. The circular support is made of a heat-resistant glass or silicon wafer having a diameter approximately equal to that of the circular workpiece and approximately the same thickness as that of the circular workpiece prior to flake formation. The bonding treatment is performed in a vacuum chamber in which a circular workpiece and a circular supporting body are sandwiched between a stage and a pressurizing circular plate disposed above and below . The stage and the pressurizing plate each have a flat surface machined with high accuracy, and the parallelism (parallelism) in the vacuum chamber is precisely adjusted with respect to each other. Further, the diameters of the stage and the pressure disk are made smaller than those of the circular workpiece and the circular support having a diameter substantially equal to that of the circular workpiece, thereby preventing contamination of the stage due to pushing out of the adhesive occurring at the outer edge portion at the time of bonding . That is, the diameter of the pressure disk is empirically used so that the adhesive that is pushed out to the outer edge does not adhere or damage it.
On the other hand, in the joining step, the in-plane error (in-plane error) after the flake processing is suppressed to about 1% of the thickness of the circular workpiece in the total thickness of the laminate after the joining composed of the circular support, the adhesive layer and the circular workpiece .
For this reason, as described above, the stage and the plane of the pressure source plate are processed with high precision to adjust the degree of parallelism between the stage and the pressure source plate, and a piezo actuator is built- (See, for example, Patent Document 2) a mechanism that actively changes the planar shape of the pressure disk while monitoring the thickness, the load distribution (load distribution) in the plane, and the like.
However, in order to planarize the in-plane thickness distribution of the adhesive layer after solidification of the adhesive after bonding, it is necessary to apply a load of 1000 kgf to a circular workpiece having a plane size of 300 mm in diameter, It is necessary to increase the rigidity of the member for supporting them, and it is therefore inevitable that the weight, length, height, and size of the device become large. In addition, a sensor base material for monitoring the planar state with high precision and in an active manner is expensive (expensive), and an apparatus that feeds back the reflected output reflects complicated control, and sufficient response is obtained There are many problems that are not suitable for such a semiconductor manufacturing apparatus which requires high productivity.
Further, the outer periphery of the circular workpiece in the pressure treatment process is a free end (free end) with respect to the flow characteristics (flow characteristics) of the adhesive layer because the boundary condition in the radial direction is different from that in the inner side. Therefore, the reduction in the volume between the circular workpiece and the circular support, which is caused by being pushed out to the edge of the adhesive layer, is directly reduced in the local thickness at the same position. It has been found that the radial extent for this thickness reduction is reduced by a thickness of up to 10 mm inward from the outer circumferential edge and from -8 urn to -14 urn as compared to the center.
As a result of precisely investigating the profile of the thickness in the radial direction in the laminate after bonding, the inventor of the present application has found out that a high-dimensional uneven shape mode (wave) is seen in the profile, Is changed by varying the diameter dimension of the pressure plate, and thus the present invention has been accomplished.
That is, the present invention aims at optimizing the concave-convex shape mode shown in the thickness profile in the radial direction in the laminated body after bonding by adjusting the diameter dimension of the pressure source disk, And to improve the in-plane error.
The bonding apparatus of the present invention is characterized in that the first original plate and the second original plate are centered in advance and the adhesive is uniformly applied to the upper surface of the first original plate or the lower surface of the second original plate, The second original plate is pressurized in the up and down direction to manufacture an original plate laminate in which the second original plate is bonded to the first original plate through an adhesive layer.
Such a joining apparatus includes a processing chamber having airtightness as a specific configuration, a stage disposed in the processing chamber and supporting the first original plate, and a second plate disposed to face the upper side of the stage in the processing chamber, And a support mechanism for supporting the second original plate so as to be detachable above the stage and downwardly of the pressure plate, Respectively. In the joining apparatus according to the present invention, the diameter of the pressure plate is smaller than the diameter of the second plate, and the optimization of the concave-convex shape mode shown in the thickness profile in the radial direction of the plate- .
According to the configuration of this joining apparatus, when the pressing disk is lowered by the elevating mechanism in the processing chamber and the second original plate is detached from the supporting mechanism, the upper surface of the second original plate is pressed by the pressing disk So that an upper surface of the first original plate and a lower surface of the second original plate are bonded to each other through an adhesive layer to produce an original plate laminate. Wherein the first disk, the second disk and the pressure source plate are previously centered and the diameter of the pressure source disk is set to a dimension that the optimization of the concavity and convexity mode shown in the radial thickness profile of the disk- . Therefore, the in-plane error of the total thickness of the disk laminate after bonding is improved.
The supporting mechanism includes, as an example of a specific structure, one movable pin contacting one side of the second original plate, a plurality of floating pins contacting a plurality of side portions of the second original plate, And a moving mechanism for reciprocatingly moving the second original plate in the radial direction.
According to the structure of the support mechanism, the movable pin is moved in the radial direction of the second original plate to move the movable pin in the direction close to the center in the radial direction of the second original plate, And the sides of the second original plate are held by the movable pin and the floating pin. The moving mechanism is moved in the direction opposite to the radial direction of the second original plate to move the movable pin in the direction away from the center of the second original plate so that the movable pin is separated from the side surface of the second original plate, The second original plate is released.
When the movable pin is coupled to a notch for angular alignment formed at one side of the second original plate, the angular position of the second original plate is determined at the same time as grasping the second original plate.
As another example of the specific structure, the support mechanism may include a suction mechanism for sucking the upper surface of the second original plate to the pressing surface of the pressing disk. According to this, by operating the suction mechanism, the suction attraction force acts on the second original plate, and the upper surface of the second original plate is attracted to the pressing surface of the pressurizing original plate. On the other hand, when the suction mechanism is stopped, the second original plate leaves the pressure plate. In this structure of the support mechanism, since the second original plate is supported on the pressurizing original plate itself, a separate support member is unnecessary and the support mechanism can be simplified.
When the bonding apparatus is provided with the decompression mechanism for decompressing the processing chamber, the vacuum degree achieved by the suction mechanism is lower than the vacuum degree in the vacuum chamber achieved by the decompression mechanism, It is necessary to provide a pressure adjusting mechanism for adjusting the pressure. This makes it possible to prevent the second original plate from falling due to weakening of the supporting force by the suction mechanism before the pressure treatment.
Further, by providing the attaching / detaching mechanism that determines the position of the center of the pressurizing disk and removes it from the elevating mechanism, it is possible to easily replace the pressurizing disk and easily cope with the lot change of the disk stack.
Further, the bonding method of the present invention is a bonding method in which a second original plate, which is supported on a stage and is centered above a first original plate uniformly coated with an adhesive agent, is opposed to the first original plate and the second original plate, The upper surface of the second original plate is pressurized with an equal force by a pressurizing original plate having a center fit, and the first original plate and the second original plate are bonded to each other to manufacture an original plate laminate. In the joining method of the present invention, a pressurizing disk having an optimized diameter dimension of the concavo-convex shape mode shown in the thickness profile of the circular laminate in the radial direction in the pressure treatment process is used.
It is necessary to perform the bonding in a vacuum state so that the adhesive layer does not contain air bubbles.
When the diameter of the second original plate is set to be larger than the diameter of the first original plate, even if the adhesive layer applied on the upper surface of the first original plate is pushed out of the first original plate during the pressing process, The adhesive agent does not adhere to the side face of the first original plate because it flows to the outer periphery of the lower face of the second original plate which is one step higher and stays attached thereto. Therefore, the diameters of the first original plate after the joining are prevented from becoming uneven in the circumferential direction.
The pressure disk having the optimal diameter dimension is different for each lot of the disk stack. Therefore, if the optimum diameter dimension of the pressure plate is managed for each lot, when the lot is changed, it can be easily coped with by only exchanging with the corresponding pressure plate.
As the first original plate, for example, a silicon wafer is used, and as the second original plate, a support made of glass is used as an example. As the adhesive, for example, a photo-curable resin (photo-curable resin) or a thermosetting resin (thermosetting resin) is used.
According to the present invention, it is possible to improve the in-plane error of the total thickness of the laminated body after bonding by an inexpensive apparatus constitution.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side view showing a schematic configuration of a joining apparatus according to a first embodiment of the present invention, showing a state before a first press and a second original plate are subjected to a pressurizing process;
Fig. 2 is a side view showing a schematic configuration of the joining apparatus as described above, showing the state of the first original plate and the second original plate during the pressurizing process. Fig.
3 is a plan view for explaining a supporting mechanism of a second original plate;
[Fig. 4] Fig. 4 (A) is a side view for explaining the moving mechanism of the movable pin, showing a state in which the second original plate is supported by pressing the movable pin against the side surface of the second original plate. Fig. 4 (B) is a side view for explaining the moving mechanism of the movable pin, showing a state in which the movable plate is separated from the side surface of the second original plate to release the support of the second original plate.
5 is a view showing a radial thickness profile of the disk laminate after bonding.
6 is a side view showing a schematic configuration of a bonding apparatus according to a second embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of the present invention will be described with reference to Figs.
1 is a side view showing a schematic configuration of a bonding apparatus (bonding apparatus) according to a first embodiment of the present invention. In this joining apparatus, two kinds of first circular plates (W1) and second circular plates (second circular plates), which are uniformly applied with adhesive on one side in advance and arranged to face each other, (W2) are bonded to each other to produce an disk laminate. The first original plate is, for example, a circular workpiece made of a semiconductor such as a silicon wafer, and the second original plate is a circular support body made of glass, for example.
As shown in FIG. 1, the
The joining
The
The opening and
The upper end of a plurality of vertically extending
When the
The
2, when the
A
The pressurizing
The
The upper end of the support shaft (73) is fixed coaxially with the lower end of the piston (711) of the actuator (71). The support shaft 73 is formed in a cylindrical shape and inserted into a through hole formed at the center of the ceiling wall of the
The diameter dimension of the
The positioning protrusions of the disc magnet 74 and its positioning hole and the
When the
The
The first original plate W1 is fixed to the stage (not shown) by a carrying device (not shown) provided with a robot arm in a state where the original plate W1 is previously centered and aligned by using an aligning
The second original plate W2 is supported by the
3 is a plan view illustrating the
The moving
The stepping
The
A
4 (A), when the stepping
On the other hand, when the stepping
A method of using the
In the pressure treatment process, the
As an example of the adhesive, a thermosetting resin or a UV curable resin is used. The bonded substrate stack is discharged from the
In the joining
Five pieces of the same silicon wafer (300 mm in diameter and 775 μm in thickness) as the first original plate W1 and the same glass original plate (301 mm in diameter and 675 μm in thickness) serving as the second original plate W2 were prepared. The same kind of adhesive is uniformly applied with the same film thickness (50 mu m). Then, a
As shown in FIG. 5, it was found that all the profiles exhibit a high-dimensional concave-convex shape mode that is line-symmetrical with respect to the center line. Table 1 summarizes the analysis of the uneven shape mode.
[Table 1]
As shown in FIG. 5 and Table 1, the diameters of the pressure disk irradiated by the experiment were all smaller than the diameter (300 mm) of the silicon wafer to be processed, and all the diameters of the five kinds were measured, The number of the maximum points of the mode is three, that is, one in the center and two in the left and right. On the other hand, in the case of 296 mm, 290 mm and 285 mm, the number of the minimum points is 2, and in the case of 280 mm and 270 mm,
In detail, when the diameter of the pressure plate is 296 mm and 290 mm, a singular point (outermost singular point) farthest from the center in the radial direction becomes a maximum point, and monotonously decreases outside As a result, the outer edge has the minimum thickness. As described above, by using the pressurizing disk having a large diameter, the adhesive at the same position is pushed out to the edge of the edge by the pressure acting on the outer edge of the silicon wafer, which is the free end, A reduction in thickness is generated.
When the diameter of the pressure plate is 285 mm and the diameter of the pressure plate is reduced, the profile itself is not largely changed as in the case of 296 mm and 290 mm, but an inflection point appears on the outer side of the maximum point farthest from the center in the radial direction, The decrease in thickness on the outer side is suppressed.
When the diameters of the pressure disk smaller in diameter are 280 mm and 270 mm, a minimum point appears on the outer side of the maximum point farthest from the center in the radial direction so that the portion having the minimum thickness is radially inward from the outer edge Is shifted. The boundary condition of the outer edge portion of the silicon wafer is changed by using the pressurizing disk having a small diameter and the pressure exerted on the outer edge portion is decreased to reduce the pushing out of the adhesive, Change.
The outermost singular point (outermost singular point) farthest from the center in the radial direction is 285 mm in diameter of the intermediate pressurizing plate which changes from the maximum point to the minimum point, and the thickness profile irregular shape mode is large It can be seen that the conversion is being performed. In this example, the in-plane error of the total thickness of the disk laminate after bonding is minimized by the diameter dimension corresponding to this turning point.
However, it is not limited that the diameter dimension of the pressure disk, which minimizes the in-plane error of the total thickness of the disk laminate, is a diameter corresponding to the turning point of the profile. The diameter and thickness of the silicon wafer and glass plate used, The optimum diameter dimension varies depending on the type and the film thickness (i.e., the lot of the disc laminate). For this reason, the optimum diameter dimension of the pressurized disc is determined experimentally by testing a plurality of pressurized discs having different diameter sizes for each lot of the disc laminate, and tracking the change of the concavo-convex shape mode of the thickness profile as described above . However, if the optimum diameter dimension is determined, the pressure plate necessary for producing the grout with the same device is uniquely determined. Therefore, if the optimal diameter dimension is managed in correspondence with the various lots of the disk laminate, it is sufficient to replace the disk with a pressurizing disk having a corresponding diameter even if the lot is changed, and the control parameters of the apparatus are changed The present invention is very simple and useful.
6 is a side view showing a schematic configuration of a bonding apparatus according to a second embodiment of the present invention. In the second embodiment, the supporting mechanism for supporting the second original plate W2 in the preceding stage of the pressing treatment acts on the second original plate W2 to attract and attract the original plate W2 by the suction attraction force (Suction mechanism) 180 for supporting the suction mechanism.
The
When the pressure in the
The
The
The
The description of the above embodiments is to be considered in all respects as illustrative and not restrictive. The scope of the invention is indicated by the appended claims rather than by the foregoing embodiments. It is also intended that the scope of the invention include all modifications within the meaning and range equivalent to the claims.
10; Joining device
20; chamber
30; Pressure reducing mechanism
40; Opening and closing mechanism
50; stage
60; Pressure disk
70; Elevator
74; Disc magnet (attachment and detachment mechanism)
80; Support mechanism
83; Mobile mechanism
100; Pressure adjusting mechanism
180; Suction device
W1; The first disk
W2; The second disk
Claims (15)
A processing chamber having airtightness,
A stage disposed in the processing chamber and supporting the first original plate;
A pressurizing circular plate disposed so as to be opposed to the stage above the stage in the processing chamber and centered with respect to the first original plate and the second original plate;
An elevating mechanism (elevating mechanism) for supporting the pressure plate so as to be able to move up and down,
A supporting mechanism (supporting mechanism) for supporting the second original plate so as to be able to be released above the stage and downward of the pressure plate
Respectively,
The diameter dimension of the pressure plate is smaller than the diameter of the second disk and optimization (optimization) of the concave-convex shape mode shown in the thickness profile in the radial direction of the disk laminate And the dimension is set to be a dimension of the joining apparatus.
The supporting mechanism includes a movable pin which is in contact with one side surface of the second original plate, a plurality of floating pins which come into contact with a plurality of side portions of the side surface of the second original plate, And a moving mechanism (moving mechanism) for moving the movable pin in the radial direction of the second original plate in a reciprocating manner.
And the movable pin is coupled to a notch for angular alignment formed at one side of the side surface of the second original plate.
Wherein the support mechanism comprises a suction mechanism (suction mechanism) for sucking the upper surface of the second original plate to the pressure source plate.
And a decompression mechanism for decompressing the processing chamber so that the vacuum achieved by the suction mechanism is lower than the vacuum in the vacuum chamber achieved by the decompression mechanism, Further comprising a pressure adjusting mechanism (pressure adjusting mechanism) for adjusting the pressure in the chamber.
Wherein said elevating mechanism includes a detachment mechanism (disengagement mechanism) for determining the position of the center of said pressure disk and for detachably supporting said detachment mechanism.
Wherein the diameter dimension of the pressure disk is smaller than the diameter of the second disk and is set to a dimension at which optimization of the concave-convex shape mode shown in the thickness profile in the radial direction of the disk stack can be achieved.
Characterized in that the pressing treatment by the pressure plate is performed in a high vacuum state (high vacuum state).
And the diameter of the second original plate is larger than the diameter of the first original plate.
And the diameter of the second original plate is larger than the diameter of the first original plate.
Wherein said pressure plate is replaced with said pressure plate having a corresponding diameter dimension for each lot of said disk stack.
Wherein the pressure plate is replaced with the pressure plate having a diameter corresponding to each lot of the disk stack.
Wherein the pressure plate is replaced with the pressure plate having a diameter corresponding to each lot of the disk stack.
Wherein the first original plate is a silicon wafer and the second original plate is a glass support.
Wherein the adhesive is a photo-curable resin (photo-curable resin) or a thermosetting resin (thermosetting resin).
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JP2011267432 | 2011-12-07 | ||
JPJP-P-2011-267432 | 2011-12-07 | ||
PCT/JP2012/080675 WO2013084761A1 (en) | 2011-12-07 | 2012-11-28 | Bonding device and bonding method |
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JP (1) | JP5792831B2 (en) |
KR (1) | KR101906509B1 (en) |
TW (1) | TWI503232B (en) |
WO (1) | WO2013084761A1 (en) |
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CN105957817A (en) * | 2016-07-12 | 2016-09-21 | 武汉新芯集成电路制造有限公司 | Wafer bonding method |
CN109545692B (en) * | 2018-11-22 | 2020-06-26 | 武汉新芯集成电路制造有限公司 | Method for reducing wafer bonding edge torsion |
KR20200134708A (en) | 2019-05-23 | 2020-12-02 | 삼성전자주식회사 | Wafer bonding apparatus |
JP7394638B2 (en) | 2020-01-28 | 2023-12-08 | 東京エレクトロン株式会社 | Grinding device and grinding method |
KR102345736B1 (en) * | 2020-02-28 | 2022-01-03 | 대한민국 | Valve Grinding Apparatus And Method Using The Same |
JP7488738B2 (en) * | 2020-09-18 | 2024-05-22 | 日機装株式会社 | Vacuum lamination device and method for manufacturing laminate |
Citations (2)
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JP2009032082A (en) | 2007-07-27 | 2009-02-12 | Canon Inc | Data processor, control method and program |
WO2009022457A1 (en) | 2007-08-10 | 2009-02-19 | Nikon Corporation | Substrate bonding apparatus and substrate bonding method |
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US20090017248A1 (en) * | 2007-07-13 | 2009-01-15 | 3M Innovative Properties Company | Layered body and method for manufacturing thin substrate using the layered body |
JP5798721B2 (en) * | 2010-04-07 | 2015-10-21 | 株式会社ニコン | Substrate alignment apparatus, substrate bonding apparatus, substrate alignment method, and laminated semiconductor manufacturing method |
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- 2012-11-28 JP JP2013548190A patent/JP5792831B2/en active Active
- 2012-11-28 KR KR1020147014634A patent/KR101906509B1/en active IP Right Grant
- 2012-11-28 WO PCT/JP2012/080675 patent/WO2013084761A1/en active Application Filing
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JP2009032082A (en) | 2007-07-27 | 2009-02-12 | Canon Inc | Data processor, control method and program |
WO2009022457A1 (en) | 2007-08-10 | 2009-02-19 | Nikon Corporation | Substrate bonding apparatus and substrate bonding method |
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WO2013084761A1 (en) | 2013-06-13 |
JP5792831B2 (en) | 2015-10-14 |
TWI503232B (en) | 2015-10-11 |
TW201341194A (en) | 2013-10-16 |
JPWO2013084761A1 (en) | 2015-04-27 |
KR20140099463A (en) | 2014-08-12 |
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