KR101906509B1 - Bonding device and bonding method - Google Patents

Bonding device and bonding method Download PDF

Info

Publication number
KR101906509B1
KR101906509B1 KR1020147014634A KR20147014634A KR101906509B1 KR 101906509 B1 KR101906509 B1 KR 101906509B1 KR 1020147014634 A KR1020147014634 A KR 1020147014634A KR 20147014634 A KR20147014634 A KR 20147014634A KR 101906509 B1 KR101906509 B1 KR 101906509B1
Authority
KR
South Korea
Prior art keywords
original plate
plate
pressure
disk
diameter
Prior art date
Application number
KR1020147014634A
Other languages
Korean (ko)
Other versions
KR20140099463A (en
Inventor
고사쿠 사이노
미쓰루 다나베
Original Assignee
다즈모 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다즈모 가부시키가이샤 filed Critical 다즈모 가부시키가이샤
Publication of KR20140099463A publication Critical patent/KR20140099463A/en
Application granted granted Critical
Publication of KR101906509B1 publication Critical patent/KR101906509B1/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

In-plane error of the total thickness of the laminated body after bonding by the inexpensive apparatus constitution is improved. A second original plate W2 supported on the stage 50 and centered on the first original plate W1 uniformly coated with an adhesive is supported so as to face the first original plate W1 and the second original plate W2, The first original plate W1 and the second original plate W2 are bonded by pressing the upper surface of the second original plate W2 with an equal force by the pressurizing original plate 60 centered on the original plate W2, . The diameter dimension of the pressure disk 60 is set to a dimension at which optimization of the concave-convex shape mode shown in the thickness profile of the circular laminate in the radial direction can be achieved.

Description

[0001] BONDING DEVICE AND BONDING METHOD [0002]

The present invention relates to a joining apparatus and a joining method for joining two discs together to form a disc laminate, and more particularly, to a joining apparatus and a joining method for joining two discs to each other by means of surface grinding (polishing) In the process of thinning a circular workpiece such as a semiconductor substrate, a circular support body having substantially the same diameter as that of the circular workpiece is previously cut off from the center To a joining apparatus and a joining method for joining together after fitting and angle fitting.

In a semiconductor three-dimensional lamination process represented by a TSV (Through Silicon Via) process, it is indispensable to flatten a circular workpiece such as a semiconductor substrate by planar grinding or polishing. For thinning, for example, a silicon wafer having a diameter of 300 mm is required to have a thickness of 30 to 50 占 퐉. A circular workpiece having an extremely thin thickness with respect to a plane dimension in this manner has a rigidity in which a planar shape is maintained as a single object by its internal stress and its own weight I can not. Therefore, as described in Patent Document 1, the circular support body is previously bonded to the non-machined surface side (non-machined surface side) of the circular workpiece through the adhesive agent in the front stage of the planar grinding / .

In this joining step, a liquid adhesive agent (liquid adhesive agent) is uniformly applied to the entire surface of the circular workpiece before the flake processing (flake processing) is performed on the unprocessed surface side or the circular support surface of the circular support body. As the adhesive, a thermosetting resin (thermosetting resin) and a UV-curing resin are generally used, and they can be fixed by heat treatment after the bonding and UV irradiation. The circular support is made of a heat-resistant glass or silicon wafer having a diameter approximately equal to that of the circular workpiece and approximately the same thickness as that of the circular workpiece prior to flake formation. The bonding treatment is performed in a vacuum chamber in which a circular workpiece and a circular supporting body are sandwiched between a stage and a pressurizing circular plate disposed above and below . The stage and the pressurizing plate each have a flat surface machined with high accuracy, and the parallelism (parallelism) in the vacuum chamber is precisely adjusted with respect to each other. Further, the diameters of the stage and the pressure disk are made smaller than those of the circular workpiece and the circular support having a diameter substantially equal to that of the circular workpiece, thereby preventing contamination of the stage due to pushing out of the adhesive occurring at the outer edge portion at the time of bonding . That is, the diameter of the pressure disk is empirically used so that the adhesive that is pushed out to the outer edge does not adhere or damage it.

On the other hand, in the joining step, the in-plane error (in-plane error) after the flake processing is suppressed to about 1% of the thickness of the circular workpiece in the total thickness of the laminate after the joining composed of the circular support, the adhesive layer and the circular workpiece .

For this reason, as described above, the stage and the plane of the pressure source plate are processed with high precision to adjust the degree of parallelism between the stage and the pressure source plate, and a piezo actuator is built- (See, for example, Patent Document 2) a mechanism that actively changes the planar shape of the pressure disk while monitoring the thickness, the load distribution (load distribution) in the plane, and the like.

Patent Document 1: Japanese Patent Application Laid-Open No. 2005-159155 (paragraphs 0015, 0016, and 2) Patent Document 2: Japanese Patent Application Laid-Open No. 2004-268113 (see paragraphs 0033 to 0050)

However, in order to planarize the in-plane thickness distribution of the adhesive layer after solidification of the adhesive after bonding, it is necessary to apply a load of 1000 kgf to a circular workpiece having a plane size of 300 mm in diameter, It is necessary to increase the rigidity of the member for supporting them, and it is therefore inevitable that the weight, length, height, and size of the device become large. In addition, a sensor base material for monitoring the planar state with high precision and in an active manner is expensive (expensive), and an apparatus that feeds back the reflected output reflects complicated control, and sufficient response is obtained There are many problems that are not suitable for such a semiconductor manufacturing apparatus which requires high productivity.

Further, the outer periphery of the circular workpiece in the pressure treatment process is a free end (free end) with respect to the flow characteristics (flow characteristics) of the adhesive layer because the boundary condition in the radial direction is different from that in the inner side. Therefore, the reduction in the volume between the circular workpiece and the circular support, which is caused by being pushed out to the edge of the adhesive layer, is directly reduced in the local thickness at the same position. It has been found that the radial extent for this thickness reduction is reduced by a thickness of up to 10 mm inward from the outer circumferential edge and from -8 urn to -14 urn as compared to the center.

As a result of precisely investigating the profile of the thickness in the radial direction in the laminate after bonding, the inventor of the present application has found out that a high-dimensional uneven shape mode (wave) is seen in the profile, Is changed by varying the diameter dimension of the pressure plate, and thus the present invention has been accomplished.

That is, the present invention aims at optimizing the concave-convex shape mode shown in the thickness profile in the radial direction in the laminated body after bonding by adjusting the diameter dimension of the pressure source disk, And to improve the in-plane error.

The bonding apparatus of the present invention is characterized in that the first original plate and the second original plate are centered in advance and the adhesive is uniformly applied to the upper surface of the first original plate or the lower surface of the second original plate, The second original plate is pressurized in the up and down direction to manufacture an original plate laminate in which the second original plate is bonded to the first original plate through an adhesive layer.

Such a joining apparatus includes a processing chamber having airtightness as a specific configuration, a stage disposed in the processing chamber and supporting the first original plate, and a second plate disposed to face the upper side of the stage in the processing chamber, And a support mechanism for supporting the second original plate so as to be detachable above the stage and downwardly of the pressure plate, Respectively. In the joining apparatus according to the present invention, the diameter of the pressure plate is smaller than the diameter of the second plate, and the optimization of the concave-convex shape mode shown in the thickness profile in the radial direction of the plate- .

According to the configuration of this joining apparatus, when the pressing disk is lowered by the elevating mechanism in the processing chamber and the second original plate is detached from the supporting mechanism, the upper surface of the second original plate is pressed by the pressing disk So that an upper surface of the first original plate and a lower surface of the second original plate are bonded to each other through an adhesive layer to produce an original plate laminate. Wherein the first disk, the second disk and the pressure source plate are previously centered and the diameter of the pressure source disk is set to a dimension that the optimization of the concavity and convexity mode shown in the radial thickness profile of the disk- . Therefore, the in-plane error of the total thickness of the disk laminate after bonding is improved.

The supporting mechanism includes, as an example of a specific structure, one movable pin contacting one side of the second original plate, a plurality of floating pins contacting a plurality of side portions of the second original plate, And a moving mechanism for reciprocatingly moving the second original plate in the radial direction.

According to the structure of the support mechanism, the movable pin is moved in the radial direction of the second original plate to move the movable pin in the direction close to the center in the radial direction of the second original plate, And the sides of the second original plate are held by the movable pin and the floating pin. The moving mechanism is moved in the direction opposite to the radial direction of the second original plate to move the movable pin in the direction away from the center of the second original plate so that the movable pin is separated from the side surface of the second original plate, The second original plate is released.

When the movable pin is coupled to a notch for angular alignment formed at one side of the second original plate, the angular position of the second original plate is determined at the same time as grasping the second original plate.

As another example of the specific structure, the support mechanism may include a suction mechanism for sucking the upper surface of the second original plate to the pressing surface of the pressing disk. According to this, by operating the suction mechanism, the suction attraction force acts on the second original plate, and the upper surface of the second original plate is attracted to the pressing surface of the pressurizing original plate. On the other hand, when the suction mechanism is stopped, the second original plate leaves the pressure plate. In this structure of the support mechanism, since the second original plate is supported on the pressurizing original plate itself, a separate support member is unnecessary and the support mechanism can be simplified.

When the bonding apparatus is provided with the decompression mechanism for decompressing the processing chamber, the vacuum degree achieved by the suction mechanism is lower than the vacuum degree in the vacuum chamber achieved by the decompression mechanism, It is necessary to provide a pressure adjusting mechanism for adjusting the pressure. This makes it possible to prevent the second original plate from falling due to weakening of the supporting force by the suction mechanism before the pressure treatment.

Further, by providing the attaching / detaching mechanism that determines the position of the center of the pressurizing disk and removes it from the elevating mechanism, it is possible to easily replace the pressurizing disk and easily cope with the lot change of the disk stack.

Further, the bonding method of the present invention is a bonding method in which a second original plate, which is supported on a stage and is centered above a first original plate uniformly coated with an adhesive agent, is opposed to the first original plate and the second original plate, The upper surface of the second original plate is pressurized with an equal force by a pressurizing original plate having a center fit, and the first original plate and the second original plate are bonded to each other to manufacture an original plate laminate. In the joining method of the present invention, a pressurizing disk having an optimized diameter dimension of the concavo-convex shape mode shown in the thickness profile of the circular laminate in the radial direction in the pressure treatment process is used.

It is necessary to perform the bonding in a vacuum state so that the adhesive layer does not contain air bubbles.

When the diameter of the second original plate is set to be larger than the diameter of the first original plate, even if the adhesive layer applied on the upper surface of the first original plate is pushed out of the first original plate during the pressing process, The adhesive agent does not adhere to the side face of the first original plate because it flows to the outer periphery of the lower face of the second original plate which is one step higher and stays attached thereto. Therefore, the diameters of the first original plate after the joining are prevented from becoming uneven in the circumferential direction.

The pressure disk having the optimal diameter dimension is different for each lot of the disk stack. Therefore, if the optimum diameter dimension of the pressure plate is managed for each lot, when the lot is changed, it can be easily coped with by only exchanging with the corresponding pressure plate.

As the first original plate, for example, a silicon wafer is used, and as the second original plate, a support made of glass is used as an example. As the adhesive, for example, a photo-curable resin (photo-curable resin) or a thermosetting resin (thermosetting resin) is used.

According to the present invention, it is possible to improve the in-plane error of the total thickness of the laminated body after bonding by an inexpensive apparatus constitution.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side view showing a schematic configuration of a joining apparatus according to a first embodiment of the present invention, showing a state before a first press and a second original plate are subjected to a pressurizing process;
Fig. 2 is a side view showing a schematic configuration of the joining apparatus as described above, showing the state of the first original plate and the second original plate during the pressurizing process. Fig.
3 is a plan view for explaining a supporting mechanism of a second original plate;
[Fig. 4] Fig. 4 (A) is a side view for explaining the moving mechanism of the movable pin, showing a state in which the second original plate is supported by pressing the movable pin against the side surface of the second original plate. Fig. 4 (B) is a side view for explaining the moving mechanism of the movable pin, showing a state in which the movable plate is separated from the side surface of the second original plate to release the support of the second original plate.
5 is a view showing a radial thickness profile of the disk laminate after bonding.
6 is a side view showing a schematic configuration of a bonding apparatus according to a second embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a first embodiment of the present invention will be described with reference to Figs.

1 is a side view showing a schematic configuration of a bonding apparatus (bonding apparatus) according to a first embodiment of the present invention. In this joining apparatus, two kinds of first circular plates (W1) and second circular plates (second circular plates), which are uniformly applied with adhesive on one side in advance and arranged to face each other, (W2) are bonded to each other to produce an disk laminate. The first original plate is, for example, a circular workpiece made of a semiconductor such as a silicon wafer, and the second original plate is a circular support body made of glass, for example.

As shown in FIG. 1, the bonding apparatus 10 includes a chamber (processing chamber) 20, a pressure reducing mechanism 30, an opening / closing mechanism (opening / closing mechanism) 40, A stage 50, a pressing plate 60, an elevating mechanism 70, and a supporting mechanism (supporting mechanism) 80.

The joining apparatus 10 is provided with a base plate 11 and a door-shaped support frame 12 fixed to the base plate 11. The base plate 11 and the support frame 12 are made of a material having sufficiently high rigidity. A chamber 20 as a treatment chamber is provided inside the support frame 12. The chamber 20 is vertically divided into an upper container (upper container) 20A and a lower container (upper container) 20B. An O-ring for sealing the space between the upper and lower containers 20A and 20B to keep airtightness in the chamber 20 is provided at a portion of the chamber 20 where the upper and lower containers 20A and 20B are in contact with each other. (Not shown).

The lower container 20B is supported on the base plate 11. [ The upper container 20A is suspended from the support frame 12 and is configured to be able to move up and down (up and down) by the opening and closing mechanism 40. [

The opening and closing mechanism 40 includes an actuator 41, a lift plate 42, and a support column 43. The actuator 41 has a piston 411 and a cylinder 412. The piston 411 is a floating portion of the actuator 41 and is vertically installed at the center of the upper surface of the ceiling wall of the support frame 12. The cylinder 412 is a movable part of the actuator 41 and is configured to be movable up and down along the piston 411. The actuator 41 is driven by a solenoid, an oil pressure, an air pressure, or the like as an example, and can be controlled by an electric signal using a control mechanism (not shown) . The lifting plate 42 is fixed to the cylinder 412 of the actuator 41 so that the lifting plate 42 can move up and down with the cylinder 412 kept horizontal. The piston 411 is inserted into the center of the lift plate 42.

The upper end of a plurality of vertically extending struts 43 is fixed to the lower surface outer-rim portion of the lower steel plate 42. The column 43 penetrates the ceiling wall of the support frame 12 and its lower end is fixed to the upper surface of the upper container 20A. The upper container 20A is suspended from the lifting plate 42 via the strut 43. [

When the actuator 41 is driven in the configuration of the opening / closing mechanism 40, the upper container 20A moves up and down with respect to the lower container 20B in association with the upward / downward movement of the cylinder 412. [ Thereby opening and closing the chamber 20. Fig. 1 shows a state in which the chamber 20 is opened, and Fig. 2 shows a state in which the chamber 20 is closed.

The decompression mechanism 30 includes a vacuum line 31, a vent line 32, a vacuum pump 33, a vacuum valve 34 and a vent valve vent valve (35). The vacuum line 31 is formed by a pipe made of a vacuum material and the intake side is attached through the lower container 20B. So that the vacuum line 31 communicates with the interior of the chamber 20. The vacuum line (31) is provided with a vacuum pump (33) and a vacuum valve (34). The vent line 32 branches from the vacuum line 31 on the upstream side of the vacuum valve 34 and is connected to a pressure resistant container accommodating an inert gas (for example, nitrogen). The vent line 32 is formed by a pipe. The vent line (32) is provided with a vent valve (35).

2, when the vacuum valve 34 is opened while the chamber 20 is closed and the vacuum pump 33 is driven, air in the chamber 20 is supplied to the vacuum line 31 . As a result, the chamber 20 is depressurized and a high vacuum is obtained. The vent valve 35 is opened when an inert gas such as nitrogen is leaked into the chamber 20 through the vent line 32 to return the pressure in the chamber 20 to atmospheric pressure. The pressure in the chamber 20 is monitored by a vacuum system 17 attached to the outside of the upper container 20A.

A stage 50 as a support plate for supporting the first original plate W1 and a pressure source plate 60 for pressing the second original plate W2 are arranged so as to face each other in the chamber 20. [ The stage 50 includes a mechanism for attracting and supporting the first original plate W1 by applying at least one of a suction attraction force (suction attraction force) or an electrostatic attraction force (electrostatic attraction force).

The pressurizing disk 60 is supported so as to be able to move up and down by an elevating mechanism 70 provided in the upper container 20A. The elevating mechanism 70 includes an actuator 71, an attachment base 72, a support shaft 73, and a disk magnet 74. The pressure disk 60 is attached to the stage 50 at a parallel degree of 4 m or less and adjusted.

The actuator 71 includes a piston 711 and a cylinder 712. The cylinder 712 is an actuator part of the actuator 71 and is attached to an attachment table 72 fixed to the ceiling wall of the upper container 20A with its axial direction oriented vertically. The piston 711 is a movable part of the actuator 71 and is configured so as to be movable in the axial direction of the cylinder 712 through the mounting base 72, The actuator 71 is driven by a solenoid, hydraulic pressure, air pressure or the like as an example, and is configured to be controllable by an electrical signal using a control mechanism (not shown).

The upper end of the support shaft (73) is fixed coaxially with the lower end of the piston (711) of the actuator (71). The support shaft 73 is formed in a cylindrical shape and inserted into a through hole formed at the center of the ceiling wall of the upper container 20A. The through hole of the upper container 20A is provided with a shaft seal 14 and is sealed by the shaft seal 14 between the upper container 20A and the support shaft 73. [ A disc magnet 74 is horizontally attached to the lower end of the support shaft 73. The disc magnet 74 is attached in a state in which the center of the disc magnet 74 is precisely aligned with the axes of the piston 711 and the support shaft 73 coaxially set. The pressure disk 60 is formed of a material having a magnetic property (for example, an alloy including a magnetic material), and it is possible to adsorb and support the disk by applying the magnetic attraction force of the disk magnet 74.

The diameter dimension of the pressurizing disk 60 and the smoothness of the pressing surface (lower surface) are processed with extremely high accuracy. A plurality of positioning projections (not shown) are formed on the upper surface of the pressure disk 60 in the circumferential direction around the center and the center thereof. On the lower surface of the disk magnet 74, a plurality of positioning holes are formed in portions corresponding to the positioning projections. Therefore, if the pressure plate 60 is attracted and supported by the disk magnet 74 so that the positioning projections on the upper surface of the pressure disk 60 are engaged with the corresponding positioning holes on the lower surface of the disk magnet 74, 60 are mounted with the center thereof being aligned with the axis of the piston 711 and the support shaft 73 in a state in which the positional deviation is prevented.

The positioning protrusions of the disc magnet 74 and its positioning hole and the pressurizing disc 60 are an example of an attaching / detaching mechanism (attaching / detaching mechanism) for attaching / detaching the pressurizing disc 60. In this attaching / detaching mechanism using magnetic attraction, since a fixing component such as a screw is unnecessary, the attaching and detaching operation can be performed very easily by one-touch operation. Particularly, in the pressurizing method of the present invention in which the pressurizing disc 60 needs to be exchanged for each lot of the disc laminate, exchange can be facilitated, which is a very useful attaching / detaching mechanism.

When the actuator 71 is driven by the control mechanism in the configuration of the elevating mechanism 70 described above, the pressing disk 60 is moved up and down with respect to the stage 50 in conjunction with the upward and downward movement of the piston 711 . 2, when the pressurizing disc 60 is lowered in the closed state of the chamber 20, the pressurized products sandwiched between the pressurizing disc 60 and the stage 50, i.e., the first original plate W1 and the second original plate W2, A pressure in the vertical direction is applied to the second original plate W2.

The stage 50 is supported by the lower container 20B. A plurality of lift pins 13 are passed through the stage 50 from below. A plurality of lift pins (13) are vertically installed on the support member (16). The supporting member 16 is vertically movable by the elevating mechanism 90 so that the front end of the lift pin 13 can be projected from the supporting surface (upper surface) of the stage 50 do. The configuration of the elevating mechanism 90 is the same as that of the elevating mechanism 70 of the pressure plate 60 described above.

The first original plate W1 is fixed to the stage (not shown) by a carrying device (not shown) provided with a robot arm in a state where the original plate W1 is previously centered and aligned by using an aligning device 50 and is supported by a lift pin 13 projecting onto the stage 50. [ When the lift pin 13 is lowered in this state, the first original plate W1 is held at the fixed position (fixed position) of the supporting surface of the stage 50. [

The second original plate W2 is supported by the support mechanism 80 so as to be capable of being separated upward from the stage 50 and below the pressure plate 60. [ In the present embodiment, the support mechanism 80 is configured to grasp the side surface of the second original plate W2. The support mechanism 80 includes a movable pin 81, a floating pin 82, and a moving mechanism (device) 83.

3 is a plan view illustrating the support mechanism 80. Fig. Figs. 4 (A) and 4 (B) are side views illustrating the moving mechanism 83 of the movable pin 81. Fig. The supporting mechanism 80 will be described in detail with reference to Figs. 3, 4A and 4B. Fig. 3, the movable pin 81 is coupled to a notch N for angular alignment formed at one side of the side surface of the second original plate W2, and two floating pins 82 And two side surfaces of the second original plate W2. One movable pin 81 and two floating pins 82 are installed in a plane arrangement in which the circumference of the second original plate W2 is divided into three equal parts at a central angle of 120 deg. The movable pin 81 and the floating pin 82 are formed in a cylindrical shape as an example. As shown in Fig. 1, the floating pin 82 is fixed on the inner surface of the ceiling wall of the upper container 20A with the axial direction being perpendicular to the inner surface.

The moving mechanism 83 is configured such that the movable pin 81 can reciprocate in the radial direction of the second original plate W2. As shown in Figs. 4A and 4B, the moving mechanism 83 includes a stepping motor 831, a ball screw nut 832, a ball screw 833, A stem 834, a shaft 835, a stopper 836, a flange 837, a compression coil spring 838, and a bearing 839. [

The stepping motor 831 is oriented in the direction away from the center in the radial direction of the second original plate W2 and fixed to the outer surface of the ceiling wall of the upper container 20A. The driving force of the stepping motor 831 is transmitted to the ball screw nut 832 so as to rotate the ball screw nut 832 in the forward or reverse direction As shown in Fig. The rotational motion of the ball screw nut 832 is converted into a linear motion of the ball screw 833. The tip of the ball screw 833 is attached to the top of the vertically extending stem 834. A base end of a support shaft 835 extending parallel to the ball screw 833 is attached to the lower portion of the stem 834.

The support shaft 835 is inserted into the through hole of the side wall of the upper container 20A. A shaft seal 14 is provided in the through hole of the upper container 20A so as to seal between the upper container 20A and the support shaft 835 by the shaft seal 14. A flange 837 is formed at a portion located on the inner side of the upper container 20A in the axial direction of the support shaft 835. [ The distal end of the support shaft 835 is inserted into the through hole of the movable pin 81. [ A bearing 839 is provided in the through hole of the movable pin 81 and the movable pin 81 is slidable along the shaft 835 by the bearing 839.

A compression coil spring 838 is provided at a portion between the flange 837 and the movable pin 81 in the axial direction of the support shaft 835 and the movable pin 81 is fixed to the support shaft 838 by the compression coil spring 838 835, respectively. A stopper 836 is attached to the distal end of the support shaft 835 so that the movable pin 81 does not come off the support shaft 835 by the stopper 836. [

4 (A), when the stepping motor 831 is driven in the normal rotation by the constitution of the moving mechanism 83, the shaft 835 is moved in the radial direction of the second original plate W2 And moves in the direction close to the center. The movable pin 81 pressed by the compression coil spring 838 is pressed against the side surface of the second original plate W2 and the second original plate 82 is pressed by the movable pin 81 and the two floating pins 82, W2) are gripped at three places on the side. 3, it is assumed that the center of the second original plate W2 is set at the attachment position of the floating pin 82 so as to be aligned with the center of the pressing circular plate 60. [ At this time, when the movable pin 81 is coupled to the notch N formed at one side of the second original plate W2, the angle of the second original plate W2 can be adjusted.

On the other hand, when the stepping motor 831 is driven in the reverse direction, the support shaft 835 moves in the direction away from the center in the radial direction of the second original plate W2 as shown by an arrow in Fig. 4 (B). As a result, the movable pin 81 is separated from the side surface of the second original plate W2, and the second original plate W2 is released. When the second original plate W2 is pressed on the stage 50 with respect to the first original plate W1 by the pressure plate 60 even if the second original plate W2 is in a state of being detached as shown in Fig. 4 (A), the second original plate W2 may be pressed while being held by the fins. In the latter case, it is also effective to prevent the positional deviation of the second original plate W2 during pressurization. The gripping force of the second original plate W2 can be adjusted by the spring constant of the compression coil spring 838. [

A method of using the bonding apparatus 10 configured as described above will be described. The second original plate W2 is supported by the support mechanism 80 while the chamber 20 is opened and the second original plate W2 is held by the first original plate W1 with reference to the alignment, Is supported on the stage (50). The first original plate W1 and the second original plate W2 are disposed in the chamber 20 so as to face each other in the up-and-down direction. On the upper surface of the first original plate W1, an adhesive is uniformly applied to the upper surface with a predetermined film thickness. Then, the upper container 20A is lowered by the opening / closing mechanism 40 to close the chamber 20, and then the decompression mechanism 30 is operated to maintain the inside of the chamber 20 at a high vacuum.

In the pressure treatment process, the pressure plate 60 is lowered by the elevating mechanism 70 and the second original plate W2 is released from the supporting mechanism 80. [ The upper surface of the first original plate W1 and the lower surface of the second original plate W2 are pressed against the adhesive 50 by the pressing force of the pressing plate 60, Thereby producing a laminated body of the disc. The first original plate W1, the second original plate W2, and the pressure plate 60 are previously centered. As will be described later, the diameter dimension of the pressurizing disk 60 is set to a dimension in which the concave-convex shape mode shown in the thickness profile in the radial direction of the disk stacked body is optimized. Therefore, the in-plane error of the total thickness of the disk laminate after bonding is improved.

As an example of the adhesive, a thermosetting resin or a UV curable resin is used. The bonded substrate stack is discharged from the bonding apparatus 10, and the adhesive layer is solidified by heating (heating) or UV irradiation (UV irradiation) in the next step to complete the product.

In the joining apparatus 10 of the present invention, the pressing process is performed by using a pressing circular plate having a diameter dimension optimized for the concavo-convex shape mode, whereby the in-plane error of the total thickness of the circular plate laminated body after joining . Hereinafter, the order of dimension setting of the pressure source plate will be described by way of example.

Five pieces of the same silicon wafer (300 mm in diameter and 775 μm in thickness) as the first original plate W1 and the same glass original plate (301 mm in diameter and 675 μm in thickness) serving as the second original plate W2 were prepared. The same kind of adhesive is uniformly applied with the same film thickness (50 mu m). Then, a pressurizing disk 60 of five types (296 mm, 290 mm, 285 mm, 280 mm, and 270 mm) having different diameters is prepared and the above bonded apparatus 10, And glass plate. The pressure at the time of pressurization was set to be the same at any pressure source plate 60. The radial thickness profile of the obtained disk laminate is shown in Fig. The diameter of the stage is 296 mm.

As shown in FIG. 5, it was found that all the profiles exhibit a high-dimensional concave-convex shape mode that is line-symmetrical with respect to the center line. Table 1 summarizes the analysis of the uneven shape mode.

[Table 1]

Figure 112014051344387-pct00001

As shown in FIG. 5 and Table 1, the diameters of the pressure disk irradiated by the experiment were all smaller than the diameter (300 mm) of the silicon wafer to be processed, and all the diameters of the five kinds were measured, The number of the maximum points of the mode is three, that is, one in the center and two in the left and right. On the other hand, in the case of 296 mm, 290 mm and 285 mm, the number of the minimum points is 2, and in the case of 280 mm and 270 mm,

In detail, when the diameter of the pressure plate is 296 mm and 290 mm, a singular point (outermost singular point) farthest from the center in the radial direction becomes a maximum point, and monotonously decreases outside As a result, the outer edge has the minimum thickness. As described above, by using the pressurizing disk having a large diameter, the adhesive at the same position is pushed out to the edge of the edge by the pressure acting on the outer edge of the silicon wafer, which is the free end, A reduction in thickness is generated.

When the diameter of the pressure plate is 285 mm and the diameter of the pressure plate is reduced, the profile itself is not largely changed as in the case of 296 mm and 290 mm, but an inflection point appears on the outer side of the maximum point farthest from the center in the radial direction, The decrease in thickness on the outer side is suppressed.

When the diameters of the pressure disk smaller in diameter are 280 mm and 270 mm, a minimum point appears on the outer side of the maximum point farthest from the center in the radial direction so that the portion having the minimum thickness is radially inward from the outer edge Is shifted. The boundary condition of the outer edge portion of the silicon wafer is changed by using the pressurizing disk having a small diameter and the pressure exerted on the outer edge portion is decreased to reduce the pushing out of the adhesive, Change.

The outermost singular point (outermost singular point) farthest from the center in the radial direction is 285 mm in diameter of the intermediate pressurizing plate which changes from the maximum point to the minimum point, and the thickness profile irregular shape mode is large It can be seen that the conversion is being performed. In this example, the in-plane error of the total thickness of the disk laminate after bonding is minimized by the diameter dimension corresponding to this turning point.

However, it is not limited that the diameter dimension of the pressure disk, which minimizes the in-plane error of the total thickness of the disk laminate, is a diameter corresponding to the turning point of the profile. The diameter and thickness of the silicon wafer and glass plate used, The optimum diameter dimension varies depending on the type and the film thickness (i.e., the lot of the disc laminate). For this reason, the optimum diameter dimension of the pressurized disc is determined experimentally by testing a plurality of pressurized discs having different diameter sizes for each lot of the disc laminate, and tracking the change of the concavo-convex shape mode of the thickness profile as described above . However, if the optimum diameter dimension is determined, the pressure plate necessary for producing the grout with the same device is uniquely determined. Therefore, if the optimal diameter dimension is managed in correspondence with the various lots of the disk laminate, it is sufficient to replace the disk with a pressurizing disk having a corresponding diameter even if the lot is changed, and the control parameters of the apparatus are changed The present invention is very simple and useful.

6 is a side view showing a schematic configuration of a bonding apparatus according to a second embodiment of the present invention. In the second embodiment, the supporting mechanism for supporting the second original plate W2 in the preceding stage of the pressing treatment acts on the second original plate W2 to attract and attract the original plate W2 by the suction attraction force (Suction mechanism) 180 for supporting the suction mechanism.

The suction mechanism 180 includes a vacuum line 181, a vacuum pump 182, and a vacuum valve 183. The suction side of the vacuum line 181 passes through the inside of the support shaft 70 of the elevating mechanism 70 in the axial direction and reaches the pressing surface (lower surface) of the pressure plate 60 and opens as an air intake hole. The vacuum degree of the vacuum line 181 is monitored by the vacuum gauge 19. This suction mechanism 180 has the same configuration as the pressure-reducing mechanism 30 for achieving the vacuum in the chamber 20.

When the pressure in the chamber 20 is at atmospheric pressure, the second original plate W2 can be sucked and supported by the above configuration. However, since the pressure environment in the chamber 20 in the pressurizing process becomes high vacuum, When the degree of vacuum in the chamber 20 rises and becomes higher than the degree of vacuum of the vacuum line 181 in one configuration, the supporting force is weakened and the second original W2 may fall before the pressure disk 60 is lowered. In order to prevent such a situation, a pressure adjusting mechanism (pressure adjusting mechanism) 100 is additionally provided.

The pressure adjusting mechanism 100 is for maintaining the degree of vacuum of the vacuum line 181 of the suction mechanism 180 lower than the degree of vacuum in the chamber 20. The pressure adjusting mechanism 100 includes a nitrogen gas inflow line 101 and a mass flow controller MFC A flow controller 102 and a slot valve 103. The nitrogen gas inflow line 101 is formed by a pipe, and the gas inflow side is attached through the upper container 20A. Thus, the nitrogen gas inflow line communicates with the inside of the chamber 20. The slot valve 103 is a valve which is provided in addition to the vacuum line 31 of the decompression mechanism 30 and is configured to be able to dynamically adjust the opening degree.

The pressure regulating mechanism 100 is configured so that the decompression mechanism 30 is controlled while the opening degree of the slot valve 103 is dynamically adjusted while the nitrogen gas is introduced into the chamber 20 by using the mass flow controller 102 The vacuum degree in the chamber 20 can be maintained at a predetermined pressure. As a result, the degree of vacuum of the vacuum line 181 of the suction mechanism 180 is kept lower than the degree of vacuum in the chamber 20, so that the second original plate W2 can be adsorbed.

The vacuum valve 183 provided in the vacuum line 181 is controlled to be closed so as to release the second original plate W2 supported by the pressure disk 60 in the pressure treatment process so that the suction force of the vacuum pump 182 Forcibly block.

The description of the above embodiments is to be considered in all respects as illustrative and not restrictive. The scope of the invention is indicated by the appended claims rather than by the foregoing embodiments. It is also intended that the scope of the invention include all modifications within the meaning and range equivalent to the claims.

10; Joining device
20; chamber
30; Pressure reducing mechanism
40; Opening and closing mechanism
50; stage
60; Pressure disk
70; Elevator
74; Disc magnet (attachment and detachment mechanism)
80; Support mechanism
83; Mobile mechanism
100; Pressure adjusting mechanism
180; Suction device
W1; The first disk
W2; The second disk

Claims (15)

The first circular plate and the second circular plate are centered in advance and an adhesive is applied to the upper surface of the first circular plate or the lower surface of the second circular plate And the first original plate and the second original plate are pressed in the vertical direction to produce an original plate laminate (laminar laminate) in which the second original plate is bonded to the first original plate through an adhesive layer As a joining device,
A processing chamber having airtightness,
A stage disposed in the processing chamber and supporting the first original plate;
A pressurizing circular plate disposed so as to be opposed to the stage above the stage in the processing chamber and centered with respect to the first original plate and the second original plate;
An elevating mechanism (elevating mechanism) for supporting the pressure plate so as to be able to move up and down,
A supporting mechanism (supporting mechanism) for supporting the second original plate so as to be able to be released above the stage and downward of the pressure plate
Respectively,
The diameter dimension of the pressure plate is smaller than the diameter of the second disk and optimization (optimization) of the concave-convex shape mode shown in the thickness profile in the radial direction of the disk laminate And the dimension is set to be a dimension of the joining apparatus.
The method according to claim 1,
The supporting mechanism includes a movable pin which is in contact with one side surface of the second original plate, a plurality of floating pins which come into contact with a plurality of side portions of the side surface of the second original plate, And a moving mechanism (moving mechanism) for moving the movable pin in the radial direction of the second original plate in a reciprocating manner.
3. The method of claim 2,
And the movable pin is coupled to a notch for angular alignment formed at one side of the side surface of the second original plate.
The method according to claim 1,
Wherein the support mechanism comprises a suction mechanism (suction mechanism) for sucking the upper surface of the second original plate to the pressure source plate.
5. The method of claim 4,
And a decompression mechanism for decompressing the processing chamber so that the vacuum achieved by the suction mechanism is lower than the vacuum in the vacuum chamber achieved by the decompression mechanism, Further comprising a pressure adjusting mechanism (pressure adjusting mechanism) for adjusting the pressure in the chamber.
6. The method according to any one of claims 1 to 5,
Wherein said elevating mechanism includes a detachment mechanism (disengagement mechanism) for determining the position of the center of said pressure disk and for detachably supporting said detachment mechanism.
A second original plate supported on the stage and being centered above a first original plate uniformly coated with an adhesive agent on an upper surface thereof is supported so as to oppose the first original plate and the first original plate is centered on the first original plate and the second original plate, And pressing the upper surface of the second original plate with an equal force so as to join the first original plate and the second original plate,
Wherein the diameter dimension of the pressure disk is smaller than the diameter of the second disk and is set to a dimension at which optimization of the concave-convex shape mode shown in the thickness profile in the radial direction of the disk stack can be achieved.
8. The method of claim 7,
Characterized in that the pressing treatment by the pressure plate is performed in a high vacuum state (high vacuum state).
8. The method of claim 7,
And the diameter of the second original plate is larger than the diameter of the first original plate.
9. The method of claim 8,
And the diameter of the second original plate is larger than the diameter of the first original plate.
9. The method of claim 8,
Wherein said pressure plate is replaced with said pressure plate having a corresponding diameter dimension for each lot of said disk stack.
10. The method of claim 9,
Wherein the pressure plate is replaced with the pressure plate having a diameter corresponding to each lot of the disk stack.
11. The method of claim 10,
Wherein the pressure plate is replaced with the pressure plate having a diameter corresponding to each lot of the disk stack.
12. The method of claim 11,
Wherein the first original plate is a silicon wafer and the second original plate is a glass support.
15. The method of claim 14,
Wherein the adhesive is a photo-curable resin (photo-curable resin) or a thermosetting resin (thermosetting resin).
KR1020147014634A 2011-12-07 2012-11-28 Bonding device and bonding method KR101906509B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011267432 2011-12-07
JPJP-P-2011-267432 2011-12-07
PCT/JP2012/080675 WO2013084761A1 (en) 2011-12-07 2012-11-28 Bonding device and bonding method

Publications (2)

Publication Number Publication Date
KR20140099463A KR20140099463A (en) 2014-08-12
KR101906509B1 true KR101906509B1 (en) 2018-10-10

Family

ID=48574133

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147014634A KR101906509B1 (en) 2011-12-07 2012-11-28 Bonding device and bonding method

Country Status (4)

Country Link
JP (1) JP5792831B2 (en)
KR (1) KR101906509B1 (en)
TW (1) TWI503232B (en)
WO (1) WO2013084761A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105957817A (en) * 2016-07-12 2016-09-21 武汉新芯集成电路制造有限公司 Wafer bonding method
CN109545692B (en) * 2018-11-22 2020-06-26 武汉新芯集成电路制造有限公司 Method for reducing wafer bonding edge torsion
KR20200134708A (en) 2019-05-23 2020-12-02 삼성전자주식회사 Wafer bonding apparatus
JP7394638B2 (en) 2020-01-28 2023-12-08 東京エレクトロン株式会社 Grinding device and grinding method
KR102345736B1 (en) * 2020-02-28 2022-01-03 대한민국 Valve Grinding Apparatus And Method Using The Same
JP7488738B2 (en) * 2020-09-18 2024-05-22 日機装株式会社 Vacuum lamination device and method for manufacturing laminate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009032082A (en) 2007-07-27 2009-02-12 Canon Inc Data processor, control method and program
WO2009022457A1 (en) 2007-08-10 2009-02-19 Nikon Corporation Substrate bonding apparatus and substrate bonding method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090017248A1 (en) * 2007-07-13 2009-01-15 3M Innovative Properties Company Layered body and method for manufacturing thin substrate using the layered body
JP5798721B2 (en) * 2010-04-07 2015-10-21 株式会社ニコン Substrate alignment apparatus, substrate bonding apparatus, substrate alignment method, and laminated semiconductor manufacturing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009032082A (en) 2007-07-27 2009-02-12 Canon Inc Data processor, control method and program
WO2009022457A1 (en) 2007-08-10 2009-02-19 Nikon Corporation Substrate bonding apparatus and substrate bonding method

Also Published As

Publication number Publication date
WO2013084761A1 (en) 2013-06-13
JP5792831B2 (en) 2015-10-14
TWI503232B (en) 2015-10-11
TW201341194A (en) 2013-10-16
JPWO2013084761A1 (en) 2015-04-27
KR20140099463A (en) 2014-08-12

Similar Documents

Publication Publication Date Title
KR101906509B1 (en) Bonding device and bonding method
JP6634449B2 (en) Bellows chucks strained wafers
JP4857407B1 (en) Adhesion holding method for thin plate workpiece, adhesion holding device for thin plate workpiece, and manufacturing system
JP2006116602A (en) Parallelism regulating method and device for pressurizing apparatus
WO2009119096A1 (en) Joining device and joining method
JP2011071472A (en) Vacuum sticking method and apparatus
JP2019024081A (en) System and related technique for handling aligned substrate pair
CN111807050B (en) Alignment jig and transfer device
JP6559013B2 (en) Sheet sticking device and sticking method
KR20160086277A (en) Bonding apparatus, bonding system, bonding method, and computer storage medium
JP2004151325A (en) Method of bonding substrates together
KR101544734B1 (en) Pressurization disc, bonding device, and bonding method
WO2019044530A1 (en) Thinned plate member production method and production device
JP2015023137A (en) Peeling apparatus and peeling method
JP4852477B2 (en) Thin film forming apparatus and thin film forming method
CN106462053B (en) Method and apparatus for imprinting nanostructures
KR102194996B1 (en) Cooling sheet attachment apparatus of focusing ring for semiconductor device manufacturing
KR101288864B1 (en) Substrate bonding apparatus
KR20120087462A (en) Substrate bonding apparatus and substrate bonding method
JP2010153645A (en) Method for manufacturing laminated semiconductor device
KR102501353B1 (en) Supporting apparatus and supporting method
JP4852476B2 (en) Thin film forming apparatus and thin film forming method
CN219256508U (en) Hot pressing packaging device and processing equipment
CN114678291A (en) Pressing equipment and upper die control method and upper die device thereof
JP3796491B2 (en) Substrate bonding equipment

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant