KR101902107B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

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Publication number
KR101902107B1
KR101902107B1 KR1020170040565A KR20170040565A KR101902107B1 KR 101902107 B1 KR101902107 B1 KR 101902107B1 KR 1020170040565 A KR1020170040565 A KR 1020170040565A KR 20170040565 A KR20170040565 A KR 20170040565A KR 101902107 B1 KR101902107 B1 KR 101902107B1
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KR
South Korea
Prior art keywords
reflected wave
frequency power
arc discharge
unit
pulse
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KR1020170040565A
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English (en)
Korean (ko)
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KR20170113391A (ko
Inventor
도시히로 도조
유키 후지이
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20170113391A publication Critical patent/KR20170113391A/ko
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Publication of KR101902107B1 publication Critical patent/KR101902107B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32944—Arc detection

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020170040565A 2016-03-30 2017-03-30 플라즈마 처리 장치 및 플라즈마 처리 방법 KR101902107B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2016-067103 2016-03-30
JP2016067103A JP6667343B2 (ja) 2016-03-30 2016-03-30 プラズマ処理装置およびプラズマ処理方法

Publications (2)

Publication Number Publication Date
KR20170113391A KR20170113391A (ko) 2017-10-12
KR101902107B1 true KR101902107B1 (ko) 2018-09-27

Family

ID=60007140

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170040565A KR101902107B1 (ko) 2016-03-30 2017-03-30 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (4)

Country Link
JP (1) JP6667343B2 (zh)
KR (1) KR101902107B1 (zh)
CN (1) CN107275179B (zh)
TW (1) TWI732834B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7064895B2 (ja) * 2018-02-05 2022-05-11 株式会社日立ハイテク プラズマ処理装置
JP2019161157A (ja) * 2018-03-16 2019-09-19 株式会社日立ハイテクノロジーズ プラズマ処理方法及びプラズマ処理装置
JP7101096B2 (ja) * 2018-10-12 2022-07-14 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102223876B1 (ko) * 2019-10-28 2021-03-05 주식회사 뉴파워 프라즈마 불안정 매칭 현상을 해소하기 위한 다중 전압 제어 방법 및 다중 전압 제어 방식의 고주파 전원 장치
KR102429080B1 (ko) * 2019-12-17 2022-08-03 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 장치의 운전 방법
US11536755B2 (en) 2020-05-29 2022-12-27 Mks Instruments, Inc. System and method for arc detection using a bias RF generator signal
JP2023134139A (ja) * 2022-03-14 2023-09-27 キオクシア株式会社 半導体製造装置
CN115020178A (zh) * 2022-05-18 2022-09-06 深圳市恒运昌真空技术有限公司 等离子体腔电弧抑制方法、装置和射频电源系统

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4837368B2 (ja) * 2005-11-30 2011-12-14 株式会社ダイヘン プラズマ処理システムのアーク検出装置
US7733095B2 (en) * 2007-08-15 2010-06-08 Applied Materials, Inc. Apparatus for wafer level arc detection at an RF bias impedance match to the pedestal electrode
JP4905304B2 (ja) * 2007-09-10 2012-03-28 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP5319150B2 (ja) * 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
JP2010238881A (ja) * 2009-03-31 2010-10-21 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法
JP5839921B2 (ja) * 2011-09-30 2016-01-06 株式会社ダイヘン 高周波電源装置
JP2013098177A (ja) * 2011-10-31 2013-05-20 Semes Co Ltd 基板処理装置及びインピーダンスマッチング方法
JP6144917B2 (ja) * 2013-01-17 2017-06-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の運転方法
JP6374647B2 (ja) * 2013-11-05 2018-08-15 東京エレクトロン株式会社 プラズマ処理装置
KR101980281B1 (ko) * 2013-12-27 2019-05-21 주식회사 원익아이피에스 플라즈마처리장치 및 플라즈마처리방법

Also Published As

Publication number Publication date
TW201811122A (zh) 2018-03-16
JP6667343B2 (ja) 2020-03-18
TWI732834B (zh) 2021-07-11
CN107275179B (zh) 2019-06-14
CN107275179A (zh) 2017-10-20
KR20170113391A (ko) 2017-10-12
JP2017183030A (ja) 2017-10-05

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