KR101890691B1 - 반도체 발광 소자 - Google Patents

반도체 발광 소자 Download PDF

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Publication number
KR101890691B1
KR101890691B1 KR1020160028400A KR20160028400A KR101890691B1 KR 101890691 B1 KR101890691 B1 KR 101890691B1 KR 1020160028400 A KR1020160028400 A KR 1020160028400A KR 20160028400 A KR20160028400 A KR 20160028400A KR 101890691 B1 KR101890691 B1 KR 101890691B1
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KR
South Korea
Prior art keywords
electrode
layer
transparent electrode
semiconductor layer
type
Prior art date
Application number
KR1020160028400A
Other languages
English (en)
Korean (ko)
Other versions
KR20170105319A (ko
Inventor
유태경
김대원
Original Assignee
유태경
김대원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 유태경, 김대원 filed Critical 유태경
Priority to KR1020160028400A priority Critical patent/KR101890691B1/ko
Priority to JP2016087731A priority patent/JP6134420B1/ja
Publication of KR20170105319A publication Critical patent/KR20170105319A/ko
Application granted granted Critical
Publication of KR101890691B1 publication Critical patent/KR101890691B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
KR1020160028400A 2016-03-09 2016-03-09 반도체 발광 소자 KR101890691B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020160028400A KR101890691B1 (ko) 2016-03-09 2016-03-09 반도체 발광 소자
JP2016087731A JP6134420B1 (ja) 2016-03-09 2016-04-26 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020160028400A KR101890691B1 (ko) 2016-03-09 2016-03-09 반도체 발광 소자

Publications (2)

Publication Number Publication Date
KR20170105319A KR20170105319A (ko) 2017-09-19
KR101890691B1 true KR101890691B1 (ko) 2018-09-28

Family

ID=58745714

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020160028400A KR101890691B1 (ko) 2016-03-09 2016-03-09 반도체 발광 소자

Country Status (2)

Country Link
JP (1) JP6134420B1 (ja)
KR (1) KR101890691B1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017164146A1 (ja) 2016-03-24 2017-09-28 株式会社ペリカン 乳酸菌発酵大豆食品及び乳酸菌発酵大豆食品用の乳酸菌
JP2019149480A (ja) * 2018-02-27 2019-09-05 豊田合成株式会社 半導体素子、発光装置、および発光装置の製造方法
JP7248441B2 (ja) * 2018-03-02 2023-03-29 シャープ株式会社 画像表示素子
US11233211B2 (en) 2018-03-14 2022-01-25 Samsung Electronics Co., Ltd. Electroluminescent device, manufacturing method thereof, and display device comprising the same
CN110710002B (zh) * 2018-12-24 2023-06-30 泉州三安半导体科技有限公司 一种发光二极管及其制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013168444A (ja) 2012-02-14 2013-08-29 Toyoda Gosei Co Ltd 半導体発光素子
JP2014044971A (ja) * 2011-08-31 2014-03-13 Nichia Chem Ind Ltd 半導体発光素子
JP2014093509A (ja) 2012-11-07 2014-05-19 Nichia Chem Ind Ltd 半導体発光素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5091823B2 (ja) * 2008-09-30 2012-12-05 パナソニック株式会社 半導体発光素子
KR101072034B1 (ko) * 2009-10-15 2011-10-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
TWI470832B (zh) * 2010-03-08 2015-01-21 Lg Innotek Co Ltd 發光裝置
US9178116B2 (en) * 2010-06-25 2015-11-03 Toyoda Gosei Co. Ltd. Semiconductor light-emitting element
JP5400943B2 (ja) * 2011-05-18 2014-01-29 株式会社東芝 半導体発光素子

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014044971A (ja) * 2011-08-31 2014-03-13 Nichia Chem Ind Ltd 半導体発光素子
JP2013168444A (ja) 2012-02-14 2013-08-29 Toyoda Gosei Co Ltd 半導体発光素子
JP2014093509A (ja) 2012-11-07 2014-05-19 Nichia Chem Ind Ltd 半導体発光素子

Also Published As

Publication number Publication date
JP6134420B1 (ja) 2017-05-24
JP2017163123A (ja) 2017-09-14
KR20170105319A (ko) 2017-09-19

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A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
AMND Amendment
X701 Decision to grant (after re-examination)