KR101889678B1 - Zinc oxide varistor - Google Patents

Abstract

A varactor zinc oxide varistor comprising a varistor element using a mixture of a varistor raw material and a glass material, wherein the varistor raw material is made by adding a first oxide to zinc oxide (ZnO) as a main raw material, And a second oxide is added. The first oxide and the second oxide include a predetermined common oxide added to both the varistor raw material and the glass material.

Description

{ZINC OXIDE VARISTOR}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a zinc oxide varistor used for removing, for example, power supply noise, lightning induced noise, and the like.

As the frequency and the capacity of electrical and electronic devices are increased, the circuit of the device is protected from power supply noise, various surges, pulse noise, and electrostatic discharge (ESD), for example, in mobile phones or automobiles, Zinc oxide multilayer chip varistors have been used as countermeasures against noise and regulation against noise. As a typical application example thereof, there is a use as a semiconductor protection device from a load damp surge, an ignition surge, a brain surge, an ESD, and a switching surge in a portable electronic device or a vehicle-mounted electronic device.

As a basic composition of the zinc oxide varistor, Bi ₂ O ₃ that promotes grain growth or Sb ₂ O ₃ that inhibits grain growth is added. As the sintering aid, various glasses and the like are added. The electrical characteristics and reliability of the varistor vary greatly depending on the combination of the additive and the addition amount thereof. For example, deviation of grain growth during sintering and deviation of the double Schottky barrier called intergranular level occur due to the mixing ratio of the raw materials to be added. As a result, there is a large difference in the leakage current at the time of voltage application, the value of alpha representing the nonlinearity, the limiting voltage, and the circuit protection ability at the time of application of the surge, which are basic characteristics of the varistor.

In addition, regarding the zinc oxide varistor, for example, there is a bismuth-based zinc oxide varistor described in Patent Document 1 which is intended to improve the electrical characteristics such as the surge capacity and the limiting voltage ratio.

Japanese Patent Application Laid-Open No. 2006-245111

(1) grain (ZnO crystal grains) are uniform, (2) porosity between grains (ZnO) is small, (3) grain boundary level (double schottky And (4) the specific resistance of the grain (ZnO) is small, and the like are preferably satisfied. However, it is difficult to obtain an ideal varistor in the present situation, and it is difficult to obtain an excellent varistor in all of the basic characteristics of the varistor.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a zinc oxide varistor having improved characteristics in both leakage current, limiting voltage and impulse tolerance, which are basic characteristics of a varistor.

As a means for achieving the above object and solving the above-mentioned problems, the zinc oxide zinc oxide varistor according to the present invention comprises a varistor element using a mixture material of a varistor material and a glass material, Is formed by adding a first oxide to zinc oxide (ZnO), which is the main raw material of the varistor raw material, and the glass material is made of zinc borosilicate glass and a second oxide is added, and the first oxide and the second The oxide is characterized by containing the varistor raw material and a predetermined common oxide added to both of the glass raw material.

For example, 0.5 to 2.5 parts by weight of the glass material with respect to the zinc oxide contained in the varistor raw material is mixed with the varistor raw material. For example, the common oxide includes at least one transition metal selected from manganese oxide (MnO ₂ ), cobalt oxide (CoO), and chromium oxide (Cr ₂ O ₃ ) By weight to 5.0% by weight. Further, for example, the common oxide includes antimony oxide (Sb ₂ O ₃ ) or aluminum oxide (Al ₂ O ₃ ), and the glass material includes 0.1 to 1.5% by weight of the common oxide . Further, for example, the glass material may include 1 to 10 wt% of lead oxide (PbO) or bismuth oxide (Bi ₂ O ₃ ) as an oxide other than the second oxide. Further, the present invention is characterized in that, for example, the common oxide partially vitrified in advance is added to the varistor raw material.

As another means for solving the above-mentioned problems, the varistor raw material of the zinc oxide-based varistor according to the present invention may contain boron oxide (B ₂ O ₃ ) as an outer percentage, for example, 100 mol% of zinc oxide (ZnO) 0.1 to 1.0 mol% of cobalt oxide, 0.5 to 1.5 mol% of cobalt oxide, 0.5 to 1.5 mol% of manganese oxide (MnO ₂ ), 0.1 to 1.5 mol% of antimony oxide (Sb ₂ O ₃ ) 0.1 to 1.0 mol% of chromium oxide (Cr ₂ O ₃ ), 0.05 to 1.0 mol% of boric acid (H ₃ BO ₃ ) and 0.5 to 1.0 mol% of zinc oxide (ZnO) And 2.5 parts by weight of glass material. Further, for example, the glass material is characterized by being a bismuth zinc borosilicate composite glass.

Industrial Applicability According to the present invention, it is possible to improve the electrical characteristics as a circuit protection functional element of electronic devices and the like because it has excellent characteristics in terms of leakage current, limit voltage and impulse tolerance, which are basic characteristics of a varistor, A zinc oxide-based varistor can be obtained.

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing time-series production steps of a zinc oxide laminated chip varistor according to an embodiment of the present invention. Fig.
Fig. 2 is a diagram showing a cross-sectional structure of a zinc oxide laminated chip varistor according to this embodiment.

Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings and tables. First, each additive (varistor raw material) for forming a varistor element of a zinc oxide laminated chip varistor (hereinafter, simply referred to as a zinc oxide varistor or a zinc oxide based varistor) according to the present embodiment will be described.

(a) zinc oxide (ZnO)

The zinc oxide (ZnO) which is the main material of the zinc oxide varistor according to this embodiment is n-type semiconductor ceramics in which interstitial Zn ⁺ is present in the crystal structure. As zinc oxide for a varistor, particles having a uniform particle diameter of usually 0.4 to 1.5 占 퐉 are used.

(b) Bismuth oxide (Bi ₂ O ₃ )

Bismuth oxide is a substance which is responsible for grain boundary formation in a zinc oxide varistor. It has process points near 740 ° C and is dissolved in ZnO to form grain boundary states. Although the temperature is shifted due to the catalytic action with other raw materials, a liquid phase is formed from a relatively low temperature, and additives and oxygen are also carried. In addition, there is an effect of promoting mouth growth. If bismuth oxide is added excessively, excess Bi phase precipitates on the surface of the device, and the electric field becomes uneven due to the deviation, and the limiting voltage and impulse characteristics are deteriorated. In addition, partially excessive grain growth is caused to deteriorate characteristics such as limiting voltage.

(c) antimony oxide (Sb ₂ O ₃₎

Antimony oxide shows inhibitory effect on grain growth in zinc oxide varistor. As a result of suppressing grain growth in the process of forming antimony peroxide, pyrochlore, and spinel, uniformity of grain growth is obtained, and the limiting voltage characteristic governed by grain uniformity is improved. Further, if it is added in excess, the electric field becomes uneven from the difference between the obtained pyrochlore or spinel crystal portion and the resistivity of the grain boundary portion, and the limiting voltage characteristic and the impulse tolerance characteristic deteriorate. On the other hand, if the addition amount is small, the inhibition effect of the grain growth is varied, and the grain size is fluctuated. As a result, the electric field is uneven, and the limiting voltage characteristic and the impulse tolerance characteristic are deteriorated.

(d) cobalt oxide, manganese oxide, nickel oxide (CoO, MnO ₂ , NiO)

Transition metal elements such as cobalt, manganese, and nickel are incorporated in ZnO in a zinc oxide varistor to form a double Schottky barrier. In order to form a stable double Schottky barrier due to the difference in the valence number, the difference in the electron arrangement, the difference in the employment temperature, and the difference in ion radius, one or more kinds of addition is preferable. Since the employment limit is not full employment, the proper addition amount is determined by repeating many tests.

When these transition metal elements are added in excess, the unreacted transition metal acts as an impurity, resulting in an effect of inhibiting the growth of grains, which causes a deviation of grains and deteriorates the limiting voltage and impulse resistance. On the other hand, if the addition amount is small, a sufficient double Schottky barrier is not formed, and the electric field is concentrated on the defective portion of the double Schottky barrier to deteriorate the limiting voltage and the impulse tolerance.

(e) chromium oxide (Cr ₂ O ₃ )

Chromium oxide has a stabilizing action of particles and crystals in a zinc oxide varistor. If the addition amount is too small, the effect of such stabilization is small. On the contrary, if the addition amount is excessive, it acts as an impurity and causes unevenness of grain, deteriorating the limiting voltage and the impulse tolerance.

(f) boric acid, silicon dioxide, germanium oxide (H ₃ BO ₃ , SiO ₂ , GeO ₂ )

In the zinc oxide varistor, the fine operation is changed by the composition of the glass to be added, but what can be commonly said is that it contributes to the lowering of the sintering temperature and, at the same time, functions as a sintering auxiliary agent and forms an intergranular phase. If the glass is excessively added, the impulse tolerance is deteriorated because a large amount of the glass is precipitated on the grain boundary and the surface of the device, and the thermal diffusivity becomes poor even if the leakage current characteristics are good.

In addition, the excessive addition of the glass causes a partial abnormal grain growth, resulting in deterioration of the limiting voltage characteristic in addition to the impulse tolerance. On the other hand, if the added amount of the glass is too small, sintering becomes difficult, and all characteristics deviate. In addition, the sintering temperature is increased, and sublimation of Bi ₂ O ₃ or Sb ₂ O ₃ occurs, thereby deteriorating the reliability characteristics of the varistor.

(g) a donor element (Al ₂ O ₃ , B ₂ O ₃ )

In the zinc oxide varistor, the donor element promotes low resistance of the main raw material ZnO, and thus has an effect of rapidly diffusing the string of heat generated when a large impulse enters, thereby improving the limiting voltage and the impulse resistance. If the donor element is added in excess, spinel is formed between the ZnO and the ZnO, so that the grain growth promoting effect of abnormal grain growth and the grain growth inhibiting effect are exhibited, and the sintering inhibiting effect is twofold. In any case, the limiting voltage and the impulse tolerance deteriorate. On the other hand, if the addition amount of the donor element is too small, these effects do not appear. However, since the resistance is partially lowered, it leads to a characteristic deviation.

Next, a method for manufacturing a zinc oxide type laminated chip varistor according to one embodiment of the present invention will be described. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flowchart showing a manufacturing process of a zinc oxide laminated chip varistor according to the present embodiment in time series. FIG. 2 shows an example of the cross-sectional structure of the zinc oxide-type laminated chip varistor according to the present embodiment, manufactured by the process shown in Fig.

In step S11 of Fig. 1, the raw material powders of the zinc oxide laminated chip varistor are combined based on the basic composition shown in Table 1 or the like. Here, for example, a varistor raw material having a median average particle diameter of about 3 mu m is weighed. In addition, the grain growth inhibiting material is added according to the unit varistor voltage. Various kinds of glass are added as a sintering aid, and the composition and amount of the glass material will be described later.

In step S12, the varistor raw material weighed in step S11 is pulverized and set. For example, the particles are pulverized for 24 hours using an alumina medium having a diameter of 10 mm by means of a ball mill. In the succeeding step S13, the pulverized and sintered raw material powder is calcined. Here, heat treatment is performed at 900 占 폚 to adjust the reactivity and the particle diameter. Then, in step S14, the raw material powder after calcination is ground again by a ball mill or the like to make the particles coincide.

In step S15, a slurry is produced. For example, polyvinyl butyral (PVB) having a degree of polymerization of 300, a phthalate ester plasticizer, a polycarboxylic acid-based dispersant, a release agent of PEG # 600 and an ethanol / toluene dilution solvent are added to the above mixture to prepare a slurry. Then, in step S16, a sheet is produced from the slurry produced in step S15. Here, a film is formed by a doctor blade to form a green sheet having a thickness of, for example, about 10 to 100 mu m. Further, it is possible to fabricate a varistor of low pressure, medium pressure and high pressure by varying the thickness of the green sheet.

In step S17, the internal electrode pattern is printed using, for example, an electrode paste such as Pt, Pd, or Ag / Pd. For example, as shown in Fig. 2, which is a cross-sectional structure of the varistor, the number of internal electrodes 3 is six, and the laminate is thermocompression-bonded by hot press or the like. And dicing is performed in successive step S18. As the dicing, the laminated green sheet is cut to a predetermined product size (for example, 3216 size).

In step S19, the laminated body after dicing is maintained at 500 deg. C for 10 hours, for example, to remove binder. In the next step S21, firing is performed, for example, at 950 to 1300 占 폚 for 5 hours, and in the following step S22, the fired body is annealed at 700 占 폚. In step S23, a terminal electrode (external electrodes 5a and 5b shown in Fig. 2) is formed with, for example, Ag paste or Ag / Pd paste, and baked at a predetermined temperature.

In step S24, the external electrodes 5a and 5b formed in step S23 are plated by, for example, electrolytic plating in the order of the Ni layer and the Sn layer. Then, in a succeeding step S25, the electrical characteristics such as the varistor voltage and the leakage current are detected, and the zinc oxide laminated chip varistor as the final product is completed.

Next, the zinc oxide stacked chip varistor according to the present embodiment will be described in detail. Here, samples of a zinc oxide multilayer chip varistor differing in the amount of addition of the varistor material as the basic composition were prepared, and three characteristics (leakage current, limiting voltage, impulse tolerance described later), which are basic characteristics of the varistor, .

The evaluation items (varistor characteristics) for each sample of the varistor produced by the production method of the zinc oxide-based varistor according to the present embodiment and the measurement method thereof are as follows.

(A) Leakage current

Leakage current usually refers to the current that flows when the maximum allowable circuit voltage is applied. In the leakage current evaluation of the varistor, it is observed how much current loss occurs under a voltage environment that can be continuously applied when the varistor is used. The smaller the leakage current is, the better the leakage current is. If the leakage current is large, the deterioration failure tends to occur. Therefore, the varistor having a small leakage current is also excellent in terms of long life.

In order to suppress the leakage current to a low level, the homogeneity of the double Schottky barrier formed in the grain boundary becomes important. At the same time, if a liquid phase crystal of the grain boundary is obtained, it is preferable to increase the resistance. In the evaluation of the leakage current of the zinc oxide multilayer chip varistor according to the present embodiment, the varistor voltage was measured by reading a voltage generated when a current of 1 mA was passed, and with respect to the leakage current, And a current value flowing when a voltage of 0.9 digit was applied was measured.

(B) Limiting voltage

As described above, the varistor voltage is a voltage V _{1 mA} that appears when a current of 1 mA flows, while the limiting voltage of the varistor is a varistor voltage when a relatively large current of about 1A, 2A, or 10 A flows. The varistor is connected in parallel with the parts to be protected, and protects the circuit by cutting off the high-voltage part of abnormally high voltage generated for some reason such as ESD. The lower limit value of the limiting voltage indicating the function of suppressing the voltage as described above indicates that the circuit voltage and the load applied to the protective part are reduced.

In order to obtain the property of suppressing the limiting voltage in the varistor to be low, it is necessary to advance the homogenization of the ZnO particle size of the sintered body. As a result, the electric field of the applied load voltage is dispersed throughout the varistor, and the limiting voltage is suppressed to be low. The limiting voltage of the zinc oxide stacked chip varistor according to the present embodiment is a measurement result of a voltage generated when a current of 2A is applied. In the evaluation shown below, the ratio of the generated voltage to the varistor voltage, that is, the limited voltage ratio (V _2A / V _{1 mA} ) is shown.

(C) Impulse capacity

The impulse tolerance refers to the amount of internal high voltage / current pulse input such as a brain surge, a motor surge mounted on a vehicle, or an ignition surge. In order to improve the impulse tolerance, it is necessary to cope with both grain and grain boundaries, which are basic constituents of the varistor. First of all, it is desired to reduce the resistance of the grain so that the input large current is quickly diffused from the grain boundary to the row line, spread rapidly throughout the bulk to prevent breakage of one grain boundary.

On the other hand, it is important for the grain boundary to equalize / disperse the height of the double Schottky barrier so as not to cause destruction of the large current flowing in. In order to obtain a zinc oxide varistor having excellent electrical characteristics, all the measures considering the above-described mechanism are required. In the zinc oxide stacked chip varistor according to the present embodiment, the energy (J) generated when a pulse of 2 ms waveform was applied as the impulse tolerance (2 ms waveform) was measured. This indicates a limit energy amount in which the varistor voltage variation rate is within ± 10%.

Next, with respect to each sample of the zinc oxide type laminated chip varistor according to the present embodiment, the material composition and evaluation results of the characteristics will be described in detail. Here, various experiments were conducted on the basis of the effects of the respective additives shown in (a) to (g) in order to find out the optimum material composition of the zinc oxide type laminated chip varistor having excellent electrical characteristics. The evaluation of the zinc oxide type laminated chip varistor is as follows: (1) the effect of the addition amount of various glasses and the glass composition; (2) the effect of the addition amount of various transition metal elements and the glass composition; (3) Each of the effects was evaluated.

(1) Effect of addition amount of various glasses and glass composition and evaluation thereof

Since varistor characteristics can not be obtained only with zinc oxide and glass, various glass materials are added to the varistor raw material as a basic composition and evaluated. Table 1 shows varistor raw materials (elements and materials) as the basic composition (basic composition 1) of the zinc oxide laminated chip varistor according to the present embodiment and the addition amount thereof. Further, in Table 1, the addition amount of the elements other than ZnO is the addition amount of outer barrier to 100 mol% of ZnO.

Table 2 shows the glass materials used for the zinc oxide type laminated chip varistor. Here, glass materials (glass A to D) having four compositions were examined. Specifically,

(i) Glass A: SiO ₂ glass

(ii) Glass B: lead glass borosilicate (B ₂ O ₃ -SiO ₂ system)

(iii) Glass C: Bismuth borosilicate glass (B ₂ O ₃ -SiO ₂ -Bi ₂ O ₃ system)

(iv) Glass D: zinc borosilicate glass (B ₂ O ₃ -SiO ₂ -ZnO system)

Of the glass composition of the four compositions.

Tables 3 to 6 show evaluation results of the varistor characteristics evaluation items of the zinc oxide type laminated chip varistor according to the present embodiment. The amount of glass added in each of the tables is the weight ratio of ZnO contained in the varistor raw material (basic composition shown in Table 1), and is the result of performing the test of the characteristic evaluation item with respect to the added amount of 0.3 wt% to 2.9 wt%.

From the evaluation results of the varistor characteristics evaluation items shown in Tables 3 to 6, the glass D has improved characteristics in the limiting voltage ratio as compared with the glass A, B, and C, and a good balance result can be obtained for other items .

The addition of the glass material to the varistor raw material is to uniformize the grain size (grain size) after sintering ZnO which is the main material of the varistor. The limiting voltage characteristics and the surge resistance characteristics can be improved by uniformizing the particles. Further, in order to uniformly grow the ZnO, it was found by the above-mentioned experiment that glass based on ZnO (glass D described above) is suitable.

That is, since reaction activity is high in silica glass or the like, the reaction of ZnO proceeds at an accelerated rate, causing particles to fluctuate. On the other hand, since the ZnO-based glass is rich in ZnO, the reaction of ZnO is gentle and the deviation of grain growth is suppressed. In addition, in order to vitrify ZnO which is the main raw material of the glass material, borosilicate glass components such as SiO ₂ and B ₂ O ₃ are added. Further, Na ₂ O, K ₂ O and CaO contained in the glasses A to D are added to lower the melting point of the glass material and adjusted according to the amount of SiO ₂ . When the amount of SiO ₂ is small, addition may not be necessary in some cases.

Here, the results of examining preferable glass materials for the purpose of further improving the characteristics in relation to the elements contained in the varistor raw material as additives to the glass material will be described.

<Lead oxide, bismuth oxide (PbO, Bi ₂ O ₃ )>

PbO and Bi ₂ O ₃ as additives to the glass material can be coexisted by suppressing the distribution and concentration difference of Bi ₂ O ₃ contained in the varistor raw material as a grain boundary constituent material of ZnO. These additives also affect the flowability of the glass. PbO or Bi ₂ O ₃ is added to the varistor raw material and also added to the glass raw material. Further, by partially vitrifying PbO or Bi ₂ O ₃ and adding it to the varistor raw material, excess reaction can be suppressed. For the lead-free requirement, Bi ₂ O ₃ is selected.

The term "vitrification" as used in the present embodiment refers to a state in which the base material and the additive are heat-treated preferably at a temperature equal to or higher than the melting point of glass (for example, 1000 ° C. or higher). Thereby, the reactivity of the individual additives can be suppressed.

<Antimony Oxide, Aluminum Oxide (Sb ₂ O ₃ , Al ₂ O ₃ )>

Sb ₂ O ₃ or Al ₂ O ₃ as an additive to the glass material controls the grain growth of ZnO. This is added to the varistor raw material and also to the glass raw material. Further, by vitrifying a portion and then adding it to the varistor raw material, it can be coexistent with Sb ₂ O ₃ added in advance to the varistor raw material. Sb ₂ O ₃ and Al ₂ O ₃ correspond to common elements described in the claims of the present application.

<Manganese oxide, cobalt oxide, chromium oxide (MnO ₂ , CoO, Cr ₂ O ₃ )>

MnO ₂ , CoO, and Cr ₂ O ₃ as additives to the glass material are transition metals which control the grain boundaries and are dissolved in ZnO, and are particularly good reactive elements. Either or both of these additives are added to both the varistor raw material and the glass raw material. Further, by partially vitrifying and adding it to the varistor raw material, excessive reaction can be suppressed and the performance of zinc oxide can be adjusted. Further, MnO ₂ , CoO, and Cr ₂ O ₃ correspond to the transition metal contained in the common element described in the claims of the present application.

(2) Effect of addition amount of various transition metal elements and glass composition and evaluation thereof

Since the varistor characteristics can not be obtained only with zinc oxide and the transition metal, various transition metal elements are added to the varistor raw material as a basic composition and evaluated. Table 7 shows the varistor raw material (element and material) as the basic composition 2 of the zinc oxide type laminated chip varistor and the addition amount thereof. Further, in Table 7, the addition amounts of the elements other than ZnO were ZnO Is the addition amount of outer mortar to 100 mol%.

Here, the following elements were added to the above-mentioned basic composition 2, and an effect test was carried out.

(i) cobalt oxide (CoO) alone

(ii) manganese oxide (MnO ₂₎ alone

(iii) a combination of cobalt oxide (CoO) and manganese oxide (MnO ₂ )

The results of examination of the effect of the addition of the transition metal element are shown in Tables 8 to 12. In any of Tables 8 to 12, the addition amount of the transition metal element is an external amount to 100 mol% of ZnO.

Table 8 shows the effect of adding cobalt oxide (CoO) to the basic composition 2. As a result of the evaluation, it was confirmed that, when CoO was added, good results were obtained in the range of the limited voltage ratio and the impulse tolerance, particularly in the range of 0.5 to 1.5 mol% (in the table, surrounded by double lines) of the addition amount of CoO.

Table 9 shows the effect of adding manganese oxide (MnO ₂ ) to the basic composition 2. Results of the evaluation, the addition of manganese dioxide (MnO _2), in the limit voltage ratio, impulse immunity, particularly good results are obtained by the addition of MnO ₂ of 0.5 to eseo range of 1.5mol% (the table, the range enclosed by the double line) .

Tables 10 to 12 show the effect when mixed with cobalt oxide (CoO) and manganese oxide (MnO ₂ ) in the basic composition 2. Here, evaluation (leakage current, limiting voltage, measurement of impulse withstand voltage) was carried out in accordance with their added amounts. That is, Table 10 shows the leakage current, Table 11 shows the limit voltage, and Table 12 shows the results of the impulse tolerance. In addition, in any of Tables 10 to 12, the addition amount of cobalt oxide (CoO) and manganese oxide (MnO ₂ ) is the addition amount of outer mortar to 100 mol% of ZnO.

From the results shown in Tables 10 to 12, it can be seen that, in the basic composition 2, a combination of 0.5 to 1.5 mol% of cobalt oxide (CoO) and 0.5 to 1.5 mol% of manganese oxide (MnO ₂ ) It has been found that excellent characteristics in leakage current, limiting voltage, and impulse withstand capability can be obtained.

(3) Other element addition effects and evaluation thereof

In this case, the varistor material of base composition, as the other element, a grain boundary-forming substance (bismuth oxide (Bi ₂ O _3)), grain growth inhibitor (antimony oxide (Sb ₂ O _3), chrome (Cr ₂ O ₃ oxide ), A donor element (boric acid (H ₃ BO ₃ ), aluminum oxide (Al ₂ O ₃ )) was added and the addition amount thereof was examined.

(3-1) Addition of bismuth oxide (Bi ₂ O ₃ ) and its effect

Since the varistor characteristics can not be obtained only with zinc oxide and bismuth oxide, the characteristics evaluation items when the bismuth oxide element (Bi ₂ O ₃ ) is added to the varistor raw material (basic composition ₃ ) The test was carried out. Further, in Table 13, the addition amount of the elements other than ZnO is the addition amount of outer barrier to 100 mol% of ZnO.

Table 14 shows the evaluation results of the characteristics when the bismuth oxide element (Bi ₂ O ₃ ) was added to the basic composition 3 shown in Table 13. As a result of the evaluation, it was found that excellent characteristics in terms of leakage current, limiting voltage and impulse tolerance characteristics were obtained by adding the bismuth oxide (Bi ₂ O ₃ ) in a range of 0.1 to 1.0 mol% (enclosed by a double line in the table) .

(3-2) Addition of antimony oxide (Sb ₂ O ₃ ) and chromium oxide (Cr ₂ O ₃ ) and its effect

As the basic composition shown in Table 15, antimony oxide (Sb ₂ O ₃ ) was added to the varistor raw material (basic composition 4) as the grain growth inhibitor, and zinc oxide, antimony oxide and chromium oxide alone could not obtain varistor characteristics. And chromium oxide (Cr ₂ O ₃ ) were added in combination, and the effect was evaluated. Further, in Table 15, the addition amount of the elements other than ZnO is the addition amount of outer barrier to 100 mol% of ZnO.

Tables 16 to 18 show the effect when antimony oxide (Sb ₂ O ₃ ) and chromium oxide (Cr ₂ O ₃ ) are added in combination to the basic composition 4. That is, Table 16 shows the leakage current, Table 17 shows the limit voltage, and Table 18 shows the results of examining the impulse tolerance. The addition amounts of antimony oxide (Sb ₂ O ₃ ) and chromium oxide (Cr ₂ O ₃ ) in Table 16 to Table 18 are the addition amount of outer mortar to 100 mol% of ZnO.

From the evaluation results shown in Tables 16 to 18, combinations of addition amounts showing excellent characteristics in all the characteristics are 0.1 to 1.5 mol% of antimony oxide (Sb ₂ O ₃ ), 0.1 to 1.0 mol of chromium oxide (Cr ₂ O ₃ ) % (A range surrounded by a double line in the table), and it can be seen that excellent characteristics are obtained with respect to the leakage current, the limiting voltage, and the impulse tolerance in the range.

(3-3) Addition of donor element and its effect

(H ₃ BO ₃ ) and aluminum oxide (H ₂ BO ₃ ) as the donor element were added to the varistor raw material (basic composition 5) as the basic composition as shown in Table 19 because the zinc oxide and the donor element alone can not obtain varistor characteristics Al ₂ O ₃ ) was added to evaluate the characteristics. Further, in Table 19, the addition amount of the elements other than ZnO is the addition amount of outer barrier to 100 mol% of ZnO.

Tables 20 to 22 show the effect when boric acid (H ₃ BO ₃ ) and aluminum oxide (Al ₂ O ₃ ) are added to the basic composition 5. Specifically, Table 20 shows the leakage current, Table 21 shows the limit voltage, and Table 22 shows the impulse tolerance. In addition, the addition amounts of boric acid (H ₃ BO ₃ ) and aluminum oxide (Al ₂ O ₃ ) in Tables 20 to 22 indicate addition amounts of outer barrier to 100 mol% of ZnO.

From the results shown in Tables 20 to 22, the combinations of the additives exhibiting excellent characteristics in all the properties are 0.1 to 1.0 mol% boric acid (H ₃ BO ₃ ), aluminum oxide (Al ₂ O ₃ ) in an amount of 0.001 to 0.005 mol%, and excellent characteristics in terms of leakage current, limiting voltage and impulse resistance can be obtained with an added amount in this range.

On the other hand, it was confirmed that the addition effect of aluminum oxide (Al ₂ O ₃ ) was based on the addition of 0.1 to 1.0 mol% of boric acid (H ₃ BO ₃ ). It was also confirmed that excellent leakage current and limited voltage characteristics were obtained by adding 0.1 to 1.0 mol% of boric acid (H ₃ BO ₃ ) even without adding aluminum oxide (Al ₂ O ₃ ).

As a result of the above-described examination and evaluation, it becomes possible to form the optimum composition of the zinc oxide laminated chip varistor according to this embodiment. Table 23 shows the composition of the most preferable varistor raw material of the zinc oxide type laminated chip varistor according to the present embodiment, and Table 24 shows the composition of the optimal glass material. The glass material in Table 23 is preferably a bismuth-zirconium borosilicate glass composite, and Table 24 shows the specific composition thereof.

In Table 23, the addition amount of the raw material (excluding the glass material) is expressed as mol% of the outer limit with respect to 100 mol% of ZnO, and the added amount of the glass material is the external quantity with respect to ZnO contained in the varistor raw material.

Therefore, a zinc oxide varistor having excellent varistor characteristics can be obtained by fabricating a zinc oxide stacked chip varistor using a varistor element using the material compositions shown in Tables 23 and 24. [ More specifically, it can be seen that a varistor characteristic of not more than 2 (μA) in leakage current, not more than 1.70 (V _2A / V _1mA ) in limiting voltage ratio and 1 (J) or more in impulse tolerance can be obtained.

As described above, in the production method of the zinc oxide-based varistor according to the present embodiment, the varistor raw material in which the first additive is added to zinc oxide (ZnO) as the main raw material and the varistor raw material in which the second additive is added A varistor element of a zinc oxide-based varistor is formed by using a mixed material obtained by mixing a glass material and the first additive and the second additive include a common element added to both the varistor material and the glass material, A zinc oxide varistor having improved characteristics in both the leakage current, the limiting voltage and the impulse tolerance, which are basic characteristics of the varistor, can be obtained.

That is, a predetermined additive to be added to the varistor raw material and the added amount thereof, a predetermined additive added to the glass material and the added amount thereof, and a common element added to both the varistor raw material and the glass raw material are found, , It is possible to obtain a zinc oxide varistor having electrical characteristics excellent in circuit protection function by fabricating a varistor element with its material composition ratio.

Claims (6)

A varactor zinc oxide varistor comprising a varistor element using a varistor raw material and a glass material mixed material,
Wherein the varistor material is formed by adding a first oxide to zinc oxide (ZnO), which is a main material of the varistor material, and the glass material is obtained by adding a second oxide to a zinc borosilicate glass, Wherein the second oxide comprises a varistor material and a predetermined common oxide added to both of the glass material. The varistor zinc oxide varistor according to claim 1, wherein 0.5 to 2.5 parts by weight of the glass material with respect to the zinc oxide contained in the varistor raw material is mixed with the varistor raw material. The method according to claim 1 or 2, wherein the common oxide comprises at least one transition metal oxide selected from manganese oxide (MnO ₂ ), cobalt oxide (CoO), and chromium oxide (Cr ₂ O ₃ ) Is comprised of from 1.0 to 5.0% by weight of the common oxide. According to claim 1 or 2, wherein the common oxide containing antimony oxide (Sb ₂ O ₃₎ or aluminum (Al ₂ O ₃₎ oxide, wherein the glass material comprises the common oxide 0.1 to 1.5 wt.% &Lt; / RTI &gt; The varistor zinc oxide varistor according to claim 1, wherein the glass material comprises 1 to 10 wt% of lead oxide (PbO) or bismuth oxide (Bi ₂ O ₃ ) as an oxide other than the second oxide. The varistor zinc oxide varistor according to claim 1 or 2, wherein the common oxide partially preliminarily vitrified is added to the varistor raw material.

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