TWI820611B - Zno-based varistor material, the manufacturing method of the same, and the zno-based varistor applying the same - Google Patents

Zno-based varistor material, the manufacturing method of the same, and the zno-based varistor applying the same Download PDF

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TWI820611B
TWI820611B TW111106617A TW111106617A TWI820611B TW I820611 B TWI820611 B TW I820611B TW 111106617 A TW111106617 A TW 111106617A TW 111106617 A TW111106617 A TW 111106617A TW I820611 B TWI820611 B TW I820611B
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zinc oxide
zno
additive
transition metal
oxide
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TW202334998A (en
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向性一
蔡惠如
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國立成功大學
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Abstract

The present invention provides a ZnO-based varistor material, the manufacturing method of the same, and the ZnO-based varistor applying the same. The reactants of the manufacturing method include transition metal oxides, ZnO which serves as a base material, and SrCO 3and Co 3O 4which serve as additives. The SrCO 3and Co 3O 4are first milled, calcined, and again milled. A first additive is therefore gotten. The ZnO and the transition metal oxides are calcined, and then sintered with the first additive. A ZnO-based varistor material is therefore prepared. The ZnO-based varistor material can significantly improve the varistor properties.

Description

氧化鋅變阻器材料、其製備方法及應用其之氧化鋅變阻器Zinc oxide varistor material, its preparation method and zinc oxide varistor using the same

本發明係關於一種氧化鋅變阻器材料、其製備方法及應用其之氧化鋅變阻器,特別關於一種利用固態反應法製備之氧化鋅變阻器材料。The present invention relates to a zinc oxide varistor material, its preparation method and a zinc oxide varistor using the same, particularly to a zinc oxide varistor material prepared by a solid-state reaction method.

隨著半導體蓬勃發展與5G時代的來臨,保護元件的需求日益增加,且電子設備日趨輕薄短小之高性能化發展,而設備中使用之積體電路非常容易受到靜電放電(Electrostatic discharge, ESD)破壞,因此ESD保護元件變阻器被廣泛使用於電子設備中。變阻器之材料有許多種:ZnO、TiO 2、SrTiO 3、CaCu 3Ti 4O 12、BaTiO 3、SnO 2、WO 3等,目前最常見仍以氧化鋅變阻器為主。 With the booming development of semiconductors and the advent of the 5G era, the demand for protective components is increasing day by day, and electronic equipment is becoming increasingly thinner, lighter, smaller, and more high-performance. However, the integrated circuits used in the equipment are very susceptible to damage by electrostatic discharge (ESD). , so ESD protection element varistors are widely used in electronic equipment. There are many kinds of materials for varistor: ZnO, TiO 2 , SrTiO 3 , CaCu 3 Ti 4 O 12 , BaTiO 3 , SnO 2 , WO 3, etc. At present, zinc oxide varistor is still the most common.

在氧化鋅(ZnO)變阻器研究中,已有添加價數較鋅離子高且離子半徑相似之過渡金屬氧化物,固溶進ZnO中取代鋅(Zn),以提高晶粒之施體濃度。先前技術指出在富氧的環境下可提高ZnO變阻器之變阻性質,而過渡金屬之3d能階與氧氣之π能階相互作用,在晶界上形成吸附氧,增加介面態濃度進而提高變阻性質。以鈷(Co)為例,因在降溫過程中過渡金屬被氧化失去電子,促進氧在ZnO晶界上化學吸附,因此Co離子價數較高時在固溶進ZnO取代Zn時可產生高價金屬取代之施體以及伴隨形成之授體鋅空缺。In the research on zinc oxide (ZnO) varistor, transition metal oxides with a higher valence than zinc ions and similar ionic radii have been added and solid dissolved into ZnO to replace zinc (Zn) to increase the donor concentration of the crystal grains. Previous technology pointed out that the varistor properties of ZnO varistor can be improved in an oxygen-rich environment, and the 3d energy level of the transition metal interacts with the π energy level of oxygen to form adsorbed oxygen on the grain boundaries, increasing the interface state concentration and thus improving the varistor resistance. nature. Take cobalt (Co) as an example. During the cooling process, the transition metal is oxidized and loses electrons, which promotes the chemical adsorption of oxygen on the ZnO grain boundaries. Therefore, when the valence of Co ions is high, high-valent metals can be produced when ZnO is dissolved into the solid solution to replace Zn. The replaced donor and the accompanying formation of donor zinc vacancies.

然而。傳統之氧化鋅變阻器主要以鉍系(Bismuth, Bi)與鐠系(Praseodymium, Pr)為主。Bi系變阻器易於燒結過程中產生絕緣性之尖晶石二次相,導致變阻性質下降;積層式Pr系變阻器雖具有優異之靜電放電特性,但燒結溫度過高,導致需使用Pd含量較高之銀-鈀(Ag-Pd)內電極,因而使元件製作成本大幅增高。此外,釩系變阻器由於五氧化二釩(V 2O 5)具有較大之毒性,不利於工業生產;而由於環保意識高漲,對於元件中添加鉻,近年亦多所限制。 [先前技術文獻] [非專利文獻] However. Traditional zinc oxide varistors are mainly based on bismuth (Bismuth, Bi) and praseodymium (Pr) series. Bi-based varistors tend to produce insulating spinel secondary phases during the sintering process, resulting in a decrease in varistor properties. Although multilayer Pr-based varistors have excellent electrostatic discharge characteristics, the sintering temperature is too high, resulting in the need to use high Pd content. The silver-palladium (Ag-Pd) internal electrode greatly increases the cost of component manufacturing. In addition, vanadium-based varistors are not conducive to industrial production due to the high toxicity of vanadium pentoxide (V 2 O 5 ). Due to rising environmental awareness, there have been restrictions on adding chromium to components in recent years. [Prior art documents] [Non-patent documents]

[非專利文獻1]Y. Yano, Y. Takai, and H. Morooka, "Interface states in ZnO varistor with Mn, Co, and Cu impurities," J. Mater. Res., vol. 9, no. 1, pp. 112-118, 1994.[Non-patent document 1] Y. Yano, Y. Takai, and H. Morooka, "Interface states in ZnO varistor with Mn, Co, and Cu impurities," J. Mater. Res., vol. 9, no. 1, pp. 112-118, 1994.

[發明所欲解決之技術問題][Technical problem to be solved by the invention]

針對現有技術所存在的不足及缺點,本發明開發出一種無鉍、鐠、釩、鉻添加劑的耐高電壓氧化鋅變阻器材料的組成及製備方法。本發明之技術重點在於,採用全新的反應物組合與煆燒及燒結流程,解決過去該些常見反應物的疑慮,且亦可達優良性能。 [技術手段] In view of the shortcomings and shortcomings of the existing technology, the present invention develops a composition and preparation method of a high-voltage zinc oxide varistor material without bismuth, chromium, vanadium, and chromium additives. The technical focus of the present invention is to adopt a new reactant combination and calcination and sintering process to solve the doubts about these common reactants in the past and achieve excellent performance. [Technical means]

據此,本發明提供一種氧化鋅變阻器材料,其製備方法之反應物包含過渡金屬氧化物、作為基底材料之氧化鋅、作為添加劑材料之碳酸鍶與氧化鈷,該碳酸鍶與該氧化鈷先經第一次球磨、煆燒、第二次球磨獲得第一添加劑,該氧化鋅與該過渡金屬氧化物煆燒後,與該第一添加劑進行燒結,獲得該氧化鋅變阻器材料。Accordingly, the present invention provides a zinc oxide varistor material. The reactants of the preparation method include transition metal oxides, zinc oxide as a base material, strontium carbonate and cobalt oxide as additive materials. The strontium carbonate and the cobalt oxide are first The first additive is obtained by ball milling, calcining and ball milling for the second time. After calcining the zinc oxide and the transition metal oxide, they are sintered with the first additive to obtain the zinc oxide varistor material.

進一步地,該過渡金屬氧化物可包含氧化鈷與氧化錳。Further, the transition metal oxide may include cobalt oxide and manganese oxide.

進一步地,該碳酸鍶與該氧化鈷可於1000 oC下進行煆燒8小時。 Further, the strontium carbonate and the cobalt oxide can be calcined at 1000 ° C for 8 hours.

進一步地,該氧化鋅與該過渡金屬氧化物煆燒後,與該第一添加劑可於1100 oC進行燒結。 Further, after the zinc oxide and the transition metal oxide are calcined, they can be sintered with the first additive at 1100 ° C.

進一步地,該添加劑材料可進一步包含五氧化二鈮及五氧化二鉭,該碳酸鍶、該氧化鈷、該五氧化二鈮及該五氧化二鉭可先經第一次球磨、煆燒、第二次球磨獲得第二添加劑,該氧化鋅與該過渡金屬氧化物煆燒後,與該第二添加劑進行燒結。Further, the additive material may further include niobium pentoxide and tantalum pentoxide. The strontium carbonate, the cobalt oxide, the niobium pentoxide and the tantalum pentoxide may first be ball milled, calcined, and The second additive is obtained by secondary ball milling. After the zinc oxide and the transition metal oxide are calcined, they are sintered with the second additive.

進一步地,該氧化鋅與該過渡金屬氧化物煆燒後,與該第二添加劑可於1100 oC進行燒結。 Further, after the zinc oxide and the transition metal oxide are calcined, they can be sintered with the second additive at 1100 ° C.

本發明亦提供一種氧化鋅變阻器材料之製備方法,其包含以下步驟: (a)  將添加劑材料球磨後,於1000 oC下煆燒8小時,再進行球磨,獲得第一添加劑; (b)  將氧化鋅與過渡金屬氧化物進行煆燒; (c)  將步驟(b)中煆燒後之該氧化鋅及該過渡金屬氧化物與該第一添加劑進行球磨獲得粉末; (d)  將步驟(c)中球磨後的該粉末加壓成型並製備生胚; (e)  將步驟(d)之該生胚於1100 oC下燒結2小時; 其中,該添加劑材料包含碳酸鍶及氧化鈷。 The invention also provides a method for preparing a zinc oxide varistor material, which includes the following steps: (a) After ball milling the additive material, calcining it at 1000 ° C for 8 hours, and then ball milling to obtain the first additive; (b) Calcining zinc oxide and transition metal oxide; (c) ball milling the zinc oxide and transition metal oxide calcined in step (b) with the first additive to obtain powder; (d) performing step (c) ) The powder after ball milling is press-formed and a green embryo is prepared; (e) The green embryo in step (d) is sintered at 1100 ° C for 2 hours; wherein the additive material includes strontium carbonate and cobalt oxide.

進一步地,該過渡金屬氧化物可包含氧化鈷與氧化錳。Further, the transition metal oxide may include cobalt oxide and manganese oxide.

進一步地,步驟(a)之添加劑材料可包含五氧化二鈮及五氧化二鉭。Further, the additive material in step (a) may include niobium pentoxide and tantalum pentoxide.

本發明亦提供一種氧化鋅變阻器,其包含如前述之氧化鋅變阻器材料。 [發明之效果] The present invention also provides a zinc oxide varistor, which includes the zinc oxide varistor material as mentioned above. [Effects of the invention]

據此,本發明提供一種全新的氧化鋅變阻器材料,以前所未見之反應物組合製備出新穎之材料。相較於眾多先前技術,本發明之氧化鋅變阻器材料之反應物不含任何鉍、鐠、釩、鉻添加劑;相對地,本發明在包含了作為添加劑材料之碳酸鍶與氧化鈷之基礎上,若再以過渡金屬氧化物為反應物,可提高晶粒之半導化程度;進一步地,若再添加具有良好氧離子導電度之五氧化二鈮及五氧化二鉭,在ZnO晶界間形成氧離子之快速擴散通道,亦可提升ZnO之變阻性質,達成I-V曲線中之高非線性指數、高崩潰電壓及低漏電流。Accordingly, the present invention provides a brand-new zinc oxide varistor material, and novel materials are prepared from unprecedented combinations of reactants. Compared with many prior technologies, the reactants of the zinc oxide varistor material of the present invention do not contain any bismuth, chromium, vanadium, and chromium additives; in contrast, the present invention includes strontium carbonate and cobalt oxide as additive materials. If transition metal oxides are used as reactants, the semiconducting degree of the crystal grains can be improved; further, if niobium pentoxide and tantalum pentoxide with good oxygen ion conductivity are added, niobium pentoxide and tantalum pentoxide can be formed between ZnO grain boundaries. The rapid diffusion channel of oxygen ions can also improve the varistor properties of ZnO, achieving high nonlinearity index, high breakdown voltage and low leakage current in the I-V curve.

以下藉由示例性實施方式說明本發明之製備步驟、鑑定方式與分析結果。應注意,下述示例性實施方式僅用以說明本發明,而非用以限制本發明之範圍。 [氧化鋅變阻器材料之製備] The preparation steps, identification methods and analysis results of the present invention are described below through exemplary embodiments. It should be noted that the following exemplary embodiments are only used to illustrate the present invention, but not to limit the scope of the present invention. [Preparation of zinc oxide varistor material]

表1所示為使用之實驗原料:Table 1 shows the experimental raw materials used:

表1 藥品名稱 化學式 公司名稱 氧化鋅 ZnO 佳邦科技 氧化鈷 Co 3O 4 佳邦科技 氧化錳 Mn 3O 4 佳邦科技 碳酸鍶 SrCO 3 Ferak 五氧化二鈮 Nb 2O 5 Alfa Aesar 五氧化二鉭 Ta 2O 5 Alfa Aesar 乙醇 C 2H 5OH 友和 甲苯 C 6H 5CH 3 J.T.Baker 鄰苯二甲酸二丁酯 C 16H 22O 4 Aldrich Table 1 Drug name chemical formula Company name zinc oxide ZnO Jiabang Technology cobalt oxide Co 3 O 4 Jiabang Technology Manganese oxide Mn 3 O 4 Jiabang Technology Strontium carbonate SrCO 3 Ferak Niobium pentoxide Nb 2 O 5 Alfa Aesar Tantalum pentoxide Ta 2 O 5 Alfa Aesar ethanol C 2 H 5 OH Youhe Toluene C 6 H 5 CH 3 JT Baker dibutyl phthalate C 16 H 22 O 4 Aldrich

在部分實施方式中,氧化鋅變阻器材料之反應物包含作為基底材料之ZnO與作為添加劑材料之SrCO 3與Co 3O 4In some embodiments, the reactants of the zinc oxide varistor material include ZnO as the base material and SrCO 3 and Co 3 O 4 as the additive materials.

在部分實施方式中,氧化鋅變阻器材料之反應物包含過渡金屬氧化物、作為基底材料之ZnO、作為添加劑材料之SrCO 3與Co 3O 4;添加過渡金屬氧化物之原理在於其可固溶進ZnO中取代Zn,以提高晶粒之施體濃度。較佳地,在ZnO變阻器中,可添加價數較鋅離子高且離子半徑相似之過渡金屬氧化物,下述以氧化鈷或氧化錳作為示例性實施例,且當過渡金屬氧化物為氧化鈷及氧化錳時,ZnO、Co 3O 4與Mn 3O 4可以重量比為100-x-y: x: y; (0<x≤1; 0≤y≤1)之比例混合。 In some embodiments, the reactants of the zinc oxide varistor material include transition metal oxides, ZnO as the base material, SrCO 3 and Co 3 O 4 as the additive materials; the principle of adding the transition metal oxide is that it can solid dissolve into ZnO is substituted for Zn to increase the donor concentration of crystal grains. Preferably, in the ZnO varistor, a transition metal oxide with a higher valence than zinc ions and a similar ionic radius can be added. The following uses cobalt oxide or manganese oxide as an exemplary embodiment, and when the transition metal oxide is cobalt oxide When manganese oxide is used, ZnO, Co 3 O 4 and Mn 3 O 4 can be mixed in a weight ratio of 100-xy: x: y; (0<x≤1; 0≤y≤1).

在部分實施方式中,氧化鋅變阻器材料之反應物包含過渡金屬氧化物、作為基底材料之ZnO,與作為添加劑材料之SrCO 3、Co 3O 4、Nb 2O 5、Ta 2O 5;藉由Nb及Ta之協同效應,可促進氧空缺、離子遷移率、表面電子之轉移,並大幅改善燃料電池之性能。 In some embodiments, the reactants of the zinc oxide varistor material include transition metal oxides, ZnO as the base material, and SrCO 3 , Co 3 O 4 , Nb 2 O 5 , and Ta 2 O 5 as the additive materials; by The synergistic effect of Nb and Ta can promote oxygen vacancies, ion mobility, surface electron transfer, and greatly improve the performance of fuel cells.

據此,本發明提供以全新的反應物組合製備出之新穎氧化鋅變阻器材料,且該些材料皆能達成極佳的變阻器性質。以下以數實施例示例性說明。Accordingly, the present invention provides novel zinc oxide varistor materials prepared with new reactant combinations, and these materials can achieve excellent varistor properties. The following is an illustrative description using several examples.

[實施例一]ZnO-SCO之製備: 1.            將SrCO 3與Co 3O 4依SrCoO 3(SCO)之計量比秤重後,放入含氧化鋯球之球磨桶內,並加入99.5%乙醇進行18小時濕式球磨; 2.            放入100°C烘箱烘乾; 3.            將烘乾後之粉末以1000°C煆燒8小時; 4.            再以99.5%乙醇進行行星式球磨8小時使粉末細化,並放入100°C烘箱烘乾。該烘乾後之粉末即為晶界添加劑,並將其命名為SCO。 5.            將6wt%SCO粉末加入ZnO,並以99.5%乙醇進行濕式球磨18小時後,放入100°C烘箱烘乾。 6.            將步驟5中烘乾後粉末以單軸加壓方式成型,製備8×8×0.6mm之生胚; 7.            以5°C/min升至1100°C進行燒結2小時,待其自然爐冷至室溫,即為製備完成之氧化鋅變阻器材料。將此材料命名為ZnO-SCO。 [Example 1] Preparation of ZnO-SCO: 1. Weigh SrCO 3 and Co 3 O 4 according to the measurement ratio of SrCoO 3 (SCO), put them into a ball mill barrel containing zirconia balls, and add 99.5% ethanol Perform wet ball milling for 18 hours; 2. Dry in an oven at 100°C; 3. Calculate the dried powder at 1000°C for 8 hours; 4. Then perform planetary ball milling with 99.5% ethanol for 8 hours to make the powder Refine and dry in a 100°C oven. The dried powder is the grain boundary additive and is named SCO. 5. Add 6wt% SCO powder to ZnO, perform wet ball milling with 99.5% ethanol for 18 hours, and then dry it in a 100°C oven. 6. Shape the dried powder in step 5 by uniaxial pressing to prepare a green embryo of 8×8×0.6mm; 7. Sinter at 5°C/min to 1100°C for 2 hours and wait until it naturally After the furnace is cooled to room temperature, the prepared zinc oxide varistor material is completed. This material was named ZnO-SCO.

[實施例二]ZCM-SCO之製備: 1.            將SrCO 3與Co 3O 4依SrCoO 3(SCO)之計量比秤重後,放入含氧化鋯球之球磨桶內,並加入99.5%乙醇進行18小時濕式球磨; 2.            放入100°C烘箱烘乾; 3.            將烘乾後之粉末以1000°C煆燒8小時; 4.            再以99.5%乙醇進行行星式球磨8小時使粉末細化,並放入100°C烘箱烘乾。該烘乾後之粉末即為晶界添加劑,並將其命名為SCO。 5.            將ZnO、Co 3O 4與Mn 3O 4以重量比為97.96:1.72:0.32之比例混合並於600°C煆燒處理後,加入6wt%SCO粉末並以99.5%乙醇進行濕式球磨18小時後,放入100°C烘箱烘乾。 6.            將步驟5中烘乾後粉末以單軸加壓方式成型,製備8×8×0.6mm之生胚; 7.            以5°C/min升至1100°C進行燒結2小時,待其自然爐冷至室溫,即為製備完成之氧化鋅變阻器材料。將此材料命名為ZCM-SCO。 [Example 2] Preparation of ZCM-SCO: 1. Weigh SrCO 3 and Co 3 O 4 according to the measurement ratio of SrCoO 3 (SCO), put them into a ball mill barrel containing zirconia balls, and add 99.5% ethanol Perform wet ball milling for 18 hours; 2. Dry in an oven at 100°C; 3. Calculate the dried powder at 1000°C for 8 hours; 4. Then perform planetary ball milling with 99.5% ethanol for 8 hours to make the powder Refine and dry in a 100°C oven. The dried powder is the grain boundary additive and is named SCO. 5. Mix ZnO, Co 3 O 4 and Mn 3 O 4 in a weight ratio of 97.96:1.72:0.32 and calcine at 600°C. Add 6wt% SCO powder and perform wet ball milling with 99.5% ethanol. After 18 hours, place it in a 100°C oven to dry. 6. Shape the dried powder in step 5 by uniaxial pressing to prepare a green embryo of 8×8×0.6mm; 7. Sinter at 5°C/min to 1100°C for 2 hours and wait until it naturally After the furnace is cooled to room temperature, the prepared zinc oxide varistor material is completed. Name this material ZCM-SCO.

[實施例三]ZCM-SCNT之製備: 1.            將SrCO 3、Co 3O 4、Nb 2O 5及Ta 2O 5依SrCo 0.8Nb 0.1Ta 0.1O 3之計量比秤重,放入含氧化鋯球之球磨桶內,並加入99.5%乙醇進行18小時濕式球磨; 2.            放入100°C烘箱烘乾; 3.            將烘乾後之粉末以1000°C煆燒8小時; 4.            再以99.5%乙醇進行行星式球磨8小時使粉末細化,並放入100°C烘箱烘乾。該烘乾後之粉末即為晶界添加劑,並將其命名為SCNT。 5.            將ZnO、Co 3O 4與Mn 3O 4以重量比為97.96:1.72:0.32之比例混合並於600°C煆燒處理後,加入6wt%SCNT粉末並以99.5%乙醇進行濕式球磨18小時後,放入100°C烘箱烘乾。 6.            將步驟5中烘乾後粉末以單軸加壓方式成型,製備8×8×0.6mm之生胚; 7.            以5°C/min升至1100°C進行燒結2小時,待其自然爐冷至室溫,即為製備完成之氧化鋅變阻器材料。將此材料命名為ZCM-SCNT。 [材料鑑定] [Example 3] Preparation of ZCM-SCNT: 1. Weigh SrCO 3 , Co 3 O 4 , Nb 2 O 5 and Ta 2 O 5 according to the stoichiometric ratio of SrCo 0.8 Nb 0.1 Ta 0.1 O 3 and put them into a solution containing oxide Put the zirconium balls into the ball milling barrel, and add 99.5% ethanol for 18 hours of wet ball milling; 2. Place it in a 100°C oven to dry; 3. Calculate the dried powder at 1000°C for 8 hours; 4. Then The powder was refined by planetary ball milling with 99.5% ethanol for 8 hours, and then dried in a 100°C oven. The dried powder is the grain boundary additive and is named SCNT. 5. Mix ZnO, Co 3 O 4 and Mn 3 O 4 in a weight ratio of 97.96:1.72:0.32 and calcine at 600°C. Add 6wt% SCNT powder and perform wet ball milling with 99.5% ethanol. After 18 hours, place it in a 100°C oven to dry. 6. Shape the dried powder in step 5 by uniaxial pressing to prepare a green embryo of 8×8×0.6mm; 7. Sinter at 5°C/min to 1100°C for 2 hours and wait until it naturally After the furnace is cooled to room temperature, the prepared zinc oxide varistor material is completed. This material was named ZCM-SCNT. [Material identification]

以下,對上述三種材料進行材料鑑定,藉此討論各材料中組成及其性能分析。Below, the material identification of the above three materials is carried out to discuss the composition and performance analysis of each material.

本發明實施方式中之鑑定儀器與方式包含以下: 熱重曲線:各樣品之起始粉末利用熱差/熱重分析儀器(DTA/TG, Netzsch STA409PC)以5°C/min升至1100°C,再以2°C/min降至400°C之升降溫曲線進行熱重分析,觀察燒結與降溫過程之重量變化。 微結構:將各樣品之燒結體進行拋光與酸腐蝕,並於表面鍍上白金增加導電度,利用高解析掃描式電子顯微鏡(SEM, Hitachi SU-1510, Tokyo, Japan)觀察微結構並計算晶粒大小。 阿基米德密度:將燒結過後之樣品進行秤重,完畢後放於去離子水中煮沸24小時,測量其飽和含水重與懸浮重,再計算各樣品之視密度。 相鑑定:將待鑑定物粉末磨細,利用銅靶(CuKα1=1.5406Å)之X光繞射分析儀(XRD, Dandong Fangyuan, DX-2700, Sandong, China),掃描角度2θ為 15~80˚(Step Angle = 0.04°, Step Time = 1秒)、工作電壓為35kV、電流則為 30mA,並結合國際繞射數據中心粉末繞射資料(International center for diffraction data-powder diffraction file, ICDD-PDF)進行相鑑定。 變阻性質:將燒結體兩側塗上銀膠電極,以高電壓源測試儀(Keithley Model 2410)測量I-V曲線,並利用以下公式計算變阻性質。崩潰電壓指在電流1mA下之參考電壓(V 1mA)除以兩電極距離(d);漏電流(I L)為電壓在0.8倍V 1mA下所流經樣品之電流。 化學分析電子光譜:利用鐵鎚敲擊燒結體獲得破斷面,利用化學分析電子光譜儀(XPS, ESCA PHI 5000 VersaProbe)得到全光譜,藉由C 1s特徵峰284.5eV進行校正,並結合軟體Origin85分析O 1s及Co 2p之組成比例。 元素分布:將各樣品之燒結體進行拋光與酸腐蝕,並於表面鍍上碳層增加導電度,利用場發射高解析電子微探儀(EPMA, JEOL JXA-8530F Field Emission Electron Probe Microanalyzer)分析元素Co、Mn、Sr之分布。 ZnO-SCO之燒結體進行拋光與酸腐蝕,並於表面鍍上白金增加導電度,利用微區元素分析儀(BRUKER, XFLASH-Detector 6/10, German)分析晶粒與晶界之成分組成。 Mott Schottky:塗覆銀膠電極之燒結體以電化學分析儀(SI 1260, Solartron Analytical, U.K.)結合軟體ZPlot(Scribner Associates. Inc., U.S.A),分析在不同偏壓(Bias, V)下之電容變化,並利用以下公式計算Mott Schottky結果。 將 與V作圖,可得一直線方程式 即為 其中𝛷 b為蕭特基位障高度;N d為晶粒之施體濃度;N t為介面態的濃度(受體濃度);W為空乏區寬度;C 0為V bias= 0時之電容值;e為1eV之基本電荷1.6×10 -19C;ɛ 0為真空介電常數8.85×10 -12F/m;ɛ r為氧化鋅之介電常數8.5×ɛ 0F/m;A為電極面積9×10 -6m 2。 阻抗分析:塗覆銀膠電極之燒結體以電化學分析儀(SI 1260, Solartron Analytical, U.K.)結合軟體ZPlot(Scribner Associates. Inc., U.S.A),分析在250~300°C下之阻抗值,並利用軟體Zview進行電路擬合。將擬合後得到之阻值利用阿瑞尼斯方程式(Arrhenius equation)計算晶粒與晶界之導電活化能。 其中σ為導電率;σ 0為常數;Ea為導電活化能;k為波茲曼常數;T為絕對溫度。 The identification instruments and methods in the embodiment of the present invention include the following: Thermogravimetric curve: The starting powder of each sample is raised to 1100°C using a differential thermal/thermogravimetric analysis instrument (DTA/TG, Netzsch STA409PC) at 5°C/min. , and then perform thermogravimetric analysis using a heating and cooling curve from 2°C/min to 400°C to observe the weight changes during sintering and cooling. Microstructure: The sintered bodies of each sample were polished and acid-etched, and the surface was plated with platinum to increase conductivity. A high-resolution scanning electron microscope (SEM, Hitachi SU-1510, Tokyo, Japan) was used to observe the microstructure and calculate the crystal structure. grain size. Archimedean density: Weigh the sintered samples, boil them in deionized water for 24 hours, measure their saturated water content and suspended weight, and then calculate the apparent density of each sample. Phase identification: Grind the powder of the substance to be identified into fine powder, and use an X-ray diffraction analyzer (XRD, Dandong Fangyuan, DX-2700, Sandong, China) with a copper target (CuKα1=1.5406Å). The scanning angle 2θ is 15~80˚. (Step Angle = 0.04°, Step Time = 1 second), the operating voltage is 35kV, the current is 30mA, and combined with the powder diffraction data of the International Center for Diffraction Data-powder diffraction file (ICDD-PDF) Perform phase identification. Rheostatic properties: Coat both sides of the sintered body with silver gel electrodes, measure the IV curve with a high voltage source tester (Keithley Model 2410), and use the following formula to calculate the varistor properties. The breakdown voltage refers to the reference voltage (V 1mA ) divided by the distance (d) between the two electrodes at a current of 1mA; the leakage current ( IL ) is the current flowing through the sample at a voltage of 0.8 times V 1mA . Chemical analysis electronic spectrum: Use a hammer to hit the sintered body to obtain the fracture surface, use a chemical analysis electron spectrometer (XPS, ESCA PHI 5000 VersaProbe) to obtain the full spectrum, correct it with the C 1s characteristic peak 284.5eV, and combine it with the software Origin85 for analysis The composition ratio of O 1s and Co 2p. Element distribution: The sintered bodies of each sample were polished and acid-etched, and a carbon layer was plated on the surface to increase conductivity. The elements were analyzed using a field emission high-resolution electron microprobe (EPMA, JEOL JXA-8530F Field Emission Electron Probe Microanalyzer). Distribution of Co, Mn, Sr. The sintered body of ZnO-SCO was polished and acid-etched, and the surface was plated with platinum to increase the conductivity. The composition of the grains and grain boundaries was analyzed using a micro-element analyzer (BRUKER, XFLASH-Detector 6/10, German). Mott Schottky: The sintered body coated with silver gel electrode was analyzed under different bias voltages (Bias, V) using an electrochemical analyzer (SI 1260, Solartron Analytical, UK) combined with the software ZPlot (Scribner Associates. Inc., USA). capacitance change and calculate the Mott Schottky result using the following formula. will Plotting with V, we can get the equation of a straight line That is rule Among them, 𝛷 b is the Schottky barrier height; N d is the donor concentration of the crystal grain; N t is the concentration of the interface state (acceptor concentration); W is the width of the depletion region; C 0 is the capacitance when V bias = 0 value; e is the basic charge of 1eV 1.6×10 -19 C; ɛ 0 is the vacuum dielectric constant 8.85×10 -12 F/m; ɛ r is the dielectric constant of zinc oxide 8.5×ɛ 0 F/m; A is The electrode area is 9×10 -6 m 2 . Impedance analysis: The impedance value of the sintered body coated with silver gel electrodes at 250~300°C was analyzed using an electrochemical analyzer (SI 1260, Solartron Analytical, UK) combined with the software ZPlot (Scribner Associates. Inc., USA). And use the software Zview to perform circuit fitting. The resistance value obtained after fitting is used to calculate the conductive activation energy of the grain and grain boundary using the Arrhenius equation. Among them, σ is the conductivity; σ 0 is a constant; Ea is the conductive activation energy; k is Boltzmann's constant; T is the absolute temperature.

相鑑定:Phase identification:

SCO與SCNT經煆燒後之X光繞射圖如圖1所示,SCO主要為六方晶系之SrCoO 2.52及二次相Sr 6Co 5O 15,SCNT為立方晶系之SrCoO 2.29及二次相SrCo 0.33Nb 0.67O 3。起始粉末依計量比混合,但合成完全氧化之純相SrCoO 3需要在高溫及富氧,在一般大氣狀態下,於高溫時易熱分解成Sr 2Co 2O 5,並於降溫時吸收氧氣形成Sr 6Co 5O 15與Co 3O 4,其反應式: (高溫) (冷卻時) The X-ray diffraction patterns of SCO and SCNT after calcining are shown in Figure 1. SCO is mainly composed of hexagonal crystal system SrCoO 2.52 and secondary phase Sr 6 Co 5 O 15 , while SCNT is mainly cubic crystal system SrCoO 2.29 and secondary phase. Phase SrCo 0.33 Nb 0.67 O 3 . The starting powders are mixed according to the stoichiometric ratio, but the synthesis of fully oxidized pure phase SrCoO 3 requires high temperature and oxygen enrichment. Under normal atmospheric conditions, it is easily thermally decomposed into Sr 2 Co 2 O 5 at high temperatures and absorbs oxygen during cooling. Sr 6 Co 5 O 15 and Co 3 O 4 are formed, and their reaction formula is: (high temperature) (while cooling)

SCNT相組成中之主相SrCoO 2.29其氧空缺濃度較SCO中之SrCoO 2.52為高,在ZnO晶界上可扮演氧快速擴散通道,使氧氣在降溫過程中可由晶界快速擴散至ZnO晶粒表面,在晶界上形成更多吸附氧,進而提高變阻性質。 The main phase SrCoO 2.29 in the SCNT phase composition has a higher oxygen vacancy concentration than SrCoO 2.52 in SCO. It can act as a rapid oxygen diffusion channel on the ZnO grain boundaries, allowing oxygen to quickly diffuse from the grain boundaries to the ZnO grain surface during the cooling process. , forming more adsorbed oxygen on the grain boundaries, thereby improving the varistor properties.

I-V曲線:I-V curve:

圖2為各樣品之I-V曲線,表2為其變阻性質。由結果顯示,添加適量過渡金屬氧化物Co 3O 4與Mn 3O 4可使非線性指數(Nonlinear coefficient, α)由14.82增至53.02,崩潰電壓(Breakdown voltage, Vb)亦由611V/mm增高至1741V/mm;晶界添加劑由SCO改為SCNT則α值進一步增至65.82;Vb甚至提升至4173V/mm;ZCM-SCO與ZCM-SCNT皆同時使漏電流(Leakage current, IL)大幅下降。 Figure 2 shows the IV curve of each sample, and Table 2 shows its varistor properties. The results show that adding appropriate amounts of transition metal oxides Co 3 O 4 and Mn 3 O 4 can increase the nonlinear coefficient (α) from 14.82 to 53.02, and the breakdown voltage (Breakdown voltage, Vb) also increases from 611V/mm. to 1741V/mm; when the grain boundary additive is changed from SCO to SCNT, the α value further increases to 65.82; Vb even increases to 4173V/mm; both ZCM-SCO and ZCM-SCNT simultaneously significantly reduce the leakage current (IL).

表3為整理各文獻使用材料與變阻性質,並與本案ZCM-SCNT進行比較(文獻來源:E. Koga, N. Sawada, and M. Amisawa, "NON-LINEAR PROPERTIES OF ZnO+ ACoO 3CERAMICS(A= Ca, Sr AND Ba) AND THEIR APPLICATION TO MULTILAYER CERAMIC VARISTOR FOR ESD-SUPPRESSION AROUND HIGH FREQUENCY," Journal of the Australian Ceramic Society, vol. 48, no. 2, pp. 232-235, 2012;J. He, S. Li, J. Lin, L. Zhang, K. Feng, L. Zhang, W. Liu, and J. Li, "Reverse manipulation of intrinsic point defects in ZnO-based varistor ceramics through Zr-stabilized high ionic conducting βIII-Bi 2O 3intergranular phase," J. Eur. Ceram. Soc., vol. 38, no. 4, pp. 1614-1620, 2018.W. Cao, X. Xie, Y. Wang, M. Chen, Y. Qiao, P. Wang, Y. Zhang, and J. Liu, "Effect of Pr 6O 11doping on the microstructure and electrical properties of ZnO varistors," Ceram. Int., vol. 45, no. 18, pp. 24777-24783, 2019;W. Liu, L. Zhang, F. Kong, K. Wu, S. Li, and J. Li, "Enhanced voltage gradient and energy absorption capability in ZnO varistor ceramics by using nano-sized ZnO powders," J. Alloys Compd., vol. 828, p. 154252, 2020.),其中Material表示添加之材料,顯示本發明獲得之變阻性質(表3第一列)遠較文獻報導為佳,亦證實同時添加適量過渡金屬氧化物及摻雜Nb及Ta之SrCoO 3確實可大幅提升ZnO變阻器材料之變阻性質。 Table 3 summarizes the materials and varistor properties used in each literature and compares them with the ZCM-SCNT in this case (document source: E. Koga, N. Sawada, and M. Amisawa, "NON-LINEAR PROPERTIES OF ZnO+ ACoO 3 CERAMICS(A = Ca, Sr AND Ba) AND THEIR APPLICATION TO MULTILAYER CERAMIC VARISTOR FOR ESD-SUPPRESSION AROUND HIGH FREQUENCY," Journal of the Australian Ceramic Society, vol. 48, no. 2, pp. 232-235, 2012; J. He, S. Li, J. Lin, L. Zhang, K. Feng, L. Zhang, W. Liu, and J. Li, "Reverse manipulation of intrinsic point defects in ZnO-based varistor ceramics through Zr-stabilized high ionic conducting βIII -Bi 2 O 3 intergranular phase," J. Eur. Ceram. Soc., vol. 38, no. 4, pp. 1614-1620, 2018. W. Cao, X. Xie, Y. Wang, M. Chen, Y. Qiao, P. Wang, Y. Zhang, and J. Liu, "Effect of Pr 6 O 11 doping on the microstructure and electrical properties of ZnO varistors," Ceram. Int., vol. 45, no. 18, pp . 24777-24783, 2019; W. Liu, L. Zhang, F. Kong, K. Wu, S. Li, and J. Li, "Enhanced voltage gradient and energy absorption capability in ZnO varistor ceramics by using nano-sized ZnO powders," J. Alloys Compd., vol. 828, p. 154252, 2020.), where Material represents the added material, showing that the varistor properties obtained by the present invention (the first column of Table 3) are far better than those reported in the literature. It has also been confirmed that adding an appropriate amount of transition metal oxide and Nb- and Ta-doped SrCoO 3 at the same time can indeed significantly improve the varistor properties of ZnO varistor materials.

表2 Table 2

表3 table 3

微結構與密度:Microstructure and Density:

圖3與表4為ZnO-SCO、ZCM-SCO、ZCM-SCNT經1100°C燒結後之微結構、晶粒大小、厚度及視密度等。微結構顯示均無二次相產生,孔洞分布與視密度結果相似,晶粒大小則為ZnO-SCO>>ZCM-SCO>ZCM-SCNT。當晶粒尺寸愈大,相同樣品厚度(D)時,其晶界個數愈少,崩潰電壓大小與晶界數量呈正比;由表4結果顯示ZCM-SCNT崩潰電壓較大,即因其晶界個數較多。Figure 3 and Table 4 show the microstructure, grain size, thickness and apparent density of ZnO-SCO, ZCM-SCO and ZCM-SCNT after sintering at 1100°C. The microstructure shows that no secondary phase is produced, the hole distribution and apparent density results are similar, and the grain size is ZnO-SCO>>ZCM-SCO>ZCM-SCNT. When the grain size is larger and the sample thickness (D) is the same, the number of grain boundaries is smaller, and the collapse voltage is proportional to the number of grain boundaries. The results in Table 4 show that the collapse voltage of ZCM-SCNT is larger, that is, because of its crystal There are more boundaries.

表4 樣品 視密度(g/cm 3) 厚度 (𝜇m) 晶粒大小(𝜇m) 晶界數目 ZnO-SCO 5.22 560 5.26 106.46 ZCM-SCO 5.23 3.07 182.41 ZCM-SCNT 5.25 2.38 235.29 Table 4 sample Apparent density (g/cm 3 ) Thickness(𝜇m) Grain size (𝜇m) Number of grain boundaries ZnO-SCO 5.22 560 5.26 106.46 ZCM-SCO 5.23 3.07 182.41 ZCM-SCNT 5.25 2.38 235.29

元素分布:Element distribution:

將各樣品對元素Co進行區域掃描,其分布結果如圖4(d)至(f)所示。元素Co皆均勻分布於晶粒內部,因Co離子半徑略小於Zn,故適量Co會固溶進ZnO晶粒之中。Each sample was subjected to area scanning for the element Co, and the distribution results are shown in Figure 4(d) to (f). The element Co is evenly distributed inside the crystal grains. Since the ion radius of Co is slightly smaller than that of Zn, an appropriate amount of Co will be solid dissolved into the ZnO crystal grains.

ZnO-SCO樣品因晶界添加劑SCO在合成之降溫過程中有部分Co 3O 4形成,故仍有Co在燒結過程中固溶進ZnO。ZCM-SCO與ZCM-SCNT在起始粉末中於ZnO先添加適量過渡金屬氧化物Co 3O 4與Mn 3O 4並於600°C煆燒,目的是讓Co離子主要以三價形式取代ZnO中之Zn,以產生較多的施體濃度。因過渡金屬元素在不同溫度下價態會產生變化,以氧化鈷為例,在600°C時會發生氧化,在800至1000°C時則會發生還原反應。 In the ZnO-SCO sample, some Co 3 O 4 is formed during the cooling process of the grain boundary additive SCO during the synthesis, so Co is still solid dissolved into the ZnO during the sintering process. For ZCM-SCO and ZCM-SCNT, appropriate amounts of transition metal oxides Co 3 O 4 and Mn 3 O 4 are first added to ZnO in the starting powder and then calcined at 600°C. The purpose is to allow Co ions to replace ZnO mainly in the trivalent form. Zn in it to produce a higher donor concentration. Because the valence state of transition metal elements changes at different temperatures, taking cobalt oxide as an example, oxidation occurs at 600°C, and reduction occurs at 800 to 1000°C.

元素Co在某些晶界處富集較為顯著,主要因過渡金屬在升溫時,有部分Co 3+會還原成Co 2+,離子半徑變大造成晶格變大,因此易往晶界處移動,且Co富集處為多個晶粒交錯,其晶界相比較多,故在區域掃描顏色強度較為明顯(圖4(e)與(f))。 The element Co is significantly enriched at certain grain boundaries. This is mainly because when the transition metal heats up, some Co 3+ will be reduced to Co 2+ . The increase in the ionic radius causes the crystal lattice to become larger, so it is easy to move to the grain boundaries. , and the Co-enriched area has multiple interlaced grains with relatively many grain boundaries, so the color intensity in the regional scan is more obvious (Figure 4(e) and (f)).

ZCM-SCO與ZCM-SCNT元素Mn的分布如圖4(j)及(k)所示,其結果與元素Co相同,皆均勻分布於晶粒,並有部分晶界處富集。The distribution of the element Mn in ZCM-SCO and ZCM-SCNT is shown in Figure 4(j) and (k). The results are the same as the element Co. They are evenly distributed in the grains and enriched at some grain boundaries.

各樣品對元素Sr之分布如圖4(g)至(i)所示,由顏色強度結果顯示Sr主要在晶界處。圖5所示為ZnO-SCO在高解析掃描式電子顯微鏡之影像,將ZnO-SCO進行晶粒與晶界之點分析,結果如表5所示,為圖5中圓圈覆蓋處在晶粒與晶界之成分分析結果(未計算O與C);顯示其Sr含量在晶界處較多。The distribution of the element Sr in each sample is shown in Figure 4(g) to (i). The color intensity results show that Sr is mainly located at the grain boundaries. Figure 5 shows the image of ZnO-SCO under a high-resolution scanning electron microscope. The ZnO-SCO was analyzed at the points between grains and grain boundaries. The results are shown in Table 5, which are the points covered by the circles in Figure 5 between grains and grain boundaries. The composition analysis results of the grain boundaries (O and C are not calculated) show that the Sr content is higher at the grain boundaries.

表5 table 5

熱重曲線:Thermogravimetric curve:

圖6為在(a)升溫(速率5°C/min)及(b)降溫(速率2°C/min)下ZnO-SCO、ZCM-SCO與ZCM-SCNT之熱重損失曲線圖。於燒結過程可發現ZCM-SCO有明顯失重現象發生,這是由於添加的過渡金屬氧化物Co 3O 4與Mn 3O 4於高溫時發生還原反應,形成CoO與MnO並且同時伴隨氧氣流失。ZCM-SCNT則略微增重,因其晶界添加劑SCNT本身氧空缺較多,使氧氣於燒結過程較不易於胚體內擴散至大氣。 Figure 6 shows the thermogravimetric loss curves of ZnO-SCO, ZCM-SCO and ZCM-SCNT under (a) heating (rate 5°C/min) and (b) cooling (rate 2°C/min). During the sintering process, it can be found that ZCM-SCO has obvious weight loss. This is due to the reduction reaction of the added transition metal oxides Co 3 O 4 and Mn 3 O 4 at high temperatures, forming CoO and MnO and accompanied by the loss of oxygen. ZCM-SCNT is slightly heavier because the grain boundary additive SCNT itself has more oxygen vacancies, making it less likely for oxygen to diffuse into the atmosphere during the sintering process.

由降溫過程可得知,ZCM-SCO與ZCM-SCNT皆有明顯增重,因此時氣氛中之氧氣擴散至胚體內部,位於晶界處之SCO與SCNT為具有氧空缺缺陷結構,在晶界上扮演良好的氧通道,使氧氣可由晶界快速擴散至ZnO晶粒表面,並與過渡金屬之3d能階相互作用,在晶界上形成介面態之吸附氧,而造成ZCM-SCO與ZCM-SCNT增重較為顯著。It can be seen from the cooling process that both ZCM-SCO and ZCM-SCNT have significantly increased in weight. Therefore, the oxygen in the atmosphere diffuses into the interior of the embryo. The SCO and SCNT located at the grain boundary have an oxygen vacancy defect structure. It acts as a good oxygen channel, allowing oxygen to quickly diffuse from the grain boundary to the ZnO grain surface, and interacts with the 3d energy level of the transition metal to form an interface state of adsorbed oxygen on the grain boundary, resulting in ZCM-SCO and ZCM- SCNT gained significant weight.

表6為各起始粉末於燒結及降溫過程之重量百分比變化。Table 6 shows the weight percentage changes of each starting powder during the sintering and cooling processes.

表6 Table 6

化學分析電子光譜:Chemical Analysis Electronic Spectroscopy:

為了更進一步證實添加過渡金屬氧化物及/或晶界添加劑,可有效增加介面態之吸附氧,將燒結體之破斷面進行X光電子光譜儀分析,其結果如圖7與表7所示;其中, 為晶格氧, 為氧空缺, 為吸附氧。圖7(b)(e)(h)分別為ZnO-SCO、ZCM-SCO、ZCM-SCNT之Co 2p光譜,經由擬合在780.0eV與796.0eV有兩個主峰,分別為Co 2p 3/2與Co 2p 1/2,其中在779.4eV與794.8eV對應Co 3+,在781.1eV與796.5eV為Co 2+,以及在786.5eV與803.7eV之伴峰亦為Co 2+。ZnO中先添加適量過渡金屬氧化物之ZCM-SCO與ZCM-SCNT,在600°C下煆燒有較多之Co 3+存在。ZCM-SCNT因晶界添加劑SCNT有較多氧空缺,在晶界上扮演良好的氧通道,使氧氣在降溫過程中,由晶界快速擴散至ZnO晶粒表面,提供較多氧氣使過渡金屬於降溫過程中氧化,因此Co 3+比例明顯較高。 In order to further confirm that adding transition metal oxides and/or grain boundary additives can effectively increase the adsorbed oxygen in the interface state, the fractured surface of the sintered body was analyzed by X-ray electron spectrometer. The results are shown in Figure 7 and Table 7; among them , is the lattice oxygen, For oxygen vacancy, To adsorb oxygen. Figure 7(b)(e)(h) are the Co 2p spectra of ZnO-SCO, ZCM-SCO, and ZCM-SCNT respectively. After fitting, there are two main peaks at 780.0eV and 796.0eV, which are Co 2p 3/2 respectively. With Co 2p 1/2 , the peaks at 779.4eV and 794.8eV correspond to Co 3+ , the peaks at 781.1eV and 796.5eV are Co 2+ , and the accompanying peaks at 786.5eV and 803.7eV are also Co 2+ . An appropriate amount of transition metal oxides ZCM-SCO and ZCM-SCNT are first added to ZnO, and more Co 3+ is present after calcination at 600°C. ZCM-SCNT has more oxygen vacancies due to the grain boundary additive SCNT, which acts as a good oxygen channel on the grain boundary, allowing oxygen to quickly diffuse from the grain boundary to the surface of ZnO grains during the cooling process, providing more oxygen for transition metals to Oxidation occurs during cooling, so the Co 3+ ratio is significantly higher.

圖7(c)(f)(i)分別為ZnO-SCO、ZCM-SCO、ZCM-SCNT之O 1s光譜,經擬合後在530.2、531.8、532.6eV有三個峰,分別對應晶格氧、氧空缺以及吸附氧。吸附氧比例ZCM-SCNT>ZCM-SCO>>ZnO-SCO,主要因過渡金屬在降溫時,有部分Co 2+、Mn 2+會氧化變成Co 3+、Mn 3+,失去電子並同時被氧氣捕獲,形成更多吸附氧,進而增加介面態之吸附氧濃度,提高變阻性質,α值及崩潰電壓呈現隨吸附氧比例增加而變大。氧空缺比例則為ZnO-SCO>ZCM-SCO>>ZCM-SCNT,其中晶界添加劑SCNT有較多氧空缺,但XPS結果顯示卻為最少,可能因為吸附氧帶負電,氧空缺為正,兩者易結合而變成晶格氧,因此導致ZCM-SCNT氧空缺比例最少,同理於ZCM-SCO。 Figure 7(c)(f)(i) are the O 1s spectra of ZnO-SCO, ZCM-SCO, and ZCM-SCNT respectively. After fitting, there are three peaks at 530.2, 531.8, and 532.6eV, corresponding to lattice oxygen, Oxygen vacancies and adsorbed oxygen. The adsorbed oxygen ratio ZCM-SCNT>ZCM-SCO>>ZnO-SCO is mainly because when the transition metal cools down, some Co 2+ and Mn 2+ will be oxidized into Co 3+ and Mn 3+ , losing electrons and being absorbed by oxygen at the same time. Capture, forming more adsorbed oxygen, thereby increasing the adsorbed oxygen concentration in the interface state and improving the rheostat properties. The α value and collapse voltage appear to increase as the proportion of adsorbed oxygen increases. The oxygen vacancy ratio is ZnO-SCO>ZCM-SCO>>ZCM-SCNT. The grain boundary additive SCNT has more oxygen vacancies, but the XPS results show that it is the least. This may be because the adsorbed oxygen is negatively charged and the oxygen vacancies are positive. It is easy to combine and turn into lattice oxygen, so ZCM-SCNT has the smallest oxygen vacancy ratio, the same as ZCM-SCO.

綜合Co 3+、氧空缺與吸附氧在ZCM-SCO與ZCM-SCNT之比例,晶界添加劑SCNT提供氧快速擴散之路徑,使過渡金屬於降溫過程中氧化,因而ZCM-SCNT之Co 3+比例較ZCM-SCO高約18%,但吸附氧僅略高3%,其可相呼應前述所描述因吸附氧與氧空缺結合成晶格氧,導致ZCM-SCNT氧空缺含量最少,而吸附氧僅略多ZCM-SCO。 Based on the ratio of Co 3+ , oxygen vacancies and adsorbed oxygen in ZCM-SCO and ZCM-SCNT, the grain boundary additive SCNT provides a path for rapid diffusion of oxygen, allowing the transition metal to oxidize during the cooling process. Therefore, the ratio of Co 3+ in ZCM-SCNT It is about 18% higher than ZCM-SCO, but the adsorbed oxygen is only slightly higher by 3%. This can be echoed in the above description. Because the adsorbed oxygen and oxygen vacancies combine to form lattice oxygen, ZCM-SCNT has the lowest oxygen vacancy content, while the adsorbed oxygen is only Slightly more ZCM-SCO.

表7:各樣品Co 2p與O 1s之組成比 Table 7: Composition ratio of Co 2p and O 1s in each sample

Mott Schottky:Mott Schottky:

圖9與表8為各樣品Mott Schottky之分析結果。能障高度(ψ b) ZCM-SCNT>ZCM-SCO>ZnO-SCO,因能障主要受晶界上之吸附氧量影響,因吸附氧可有效作為電子陷阱,進而提高變阻性質,結合前述熱重曲線與O 1s光譜,呼應ZCM-SCO與ZCM-SCNT之能障高於ZnO-SCO,且α值之變化趨勢也與能障高度相同。結果顯示施體濃度ZCM-SCO>ZnO-SCO>ZCM-SCNT,此係因降溫過程會有再氧化之反應,此時僅氧空位會被填充,以至於氧空缺濃度下降。故晶界添加劑SCNT雖有較多氧空缺,但其與吸附氧結合成晶格氧,使氧空缺濃度下降,造成ZCM-SCNT施體濃度最小。能障高度與空乏層寬度會隨著退火時間之增加而提升,根據Mott Schottky之關係式,其與施體濃度之下降有關。已知氧空缺為施體濃度,氧空缺濃度會隨著退火時間增加而減少,且Mn之價數增加。晶界添加劑SCNT在降溫過程中扮演良好之氧通道,使氧氣由晶界快速擴散至ZnO晶粒表面並造成氧空缺濃度下降,且XPS分析結果Co 3+比例明顯較高,因此晶界添加劑為SCNT施體濃度最小且可有效提高能障高度及空乏層寬度。 Figure 9 and Table 8 show the Mott Schottky analysis results of each sample. Energy barrier height (ψ b ) ZCM-SCNT>ZCM-SCO>ZnO-SCO, because the energy barrier is mainly affected by the amount of adsorbed oxygen on the grain boundary, because the adsorbed oxygen can effectively act as an electron trap, thereby improving the varistor properties, combined with the above The thermogravimetric curve and O 1s spectrum echo that the energy barrier of ZCM-SCO and ZCM-SCNT is higher than that of ZnO-SCO, and the changing trend of the α value is also the same as the energy barrier height. The results show that the donor concentration is ZCM-SCO>ZnO-SCO>ZCM-SCNT. This is because there will be a re-oxidation reaction during the cooling process. At this time, only the oxygen vacancies will be filled, so that the oxygen vacancy concentration decreases. Therefore, although the grain boundary additive SCNT has more oxygen vacancies, it combines with adsorbed oxygen to form lattice oxygen, which reduces the oxygen vacancy concentration and results in the smallest ZCM-SCNT donor concentration. The energy barrier height and the width of the depletion layer will increase as the annealing time increases. According to Mott Schottky's relationship, they are related to the decrease in donor concentration. It is known that the oxygen vacancy is the donor concentration. The oxygen vacancy concentration will decrease as the annealing time increases, and the valence of Mn increases. The grain boundary additive SCNT acts as a good oxygen channel during the cooling process, allowing oxygen to quickly diffuse from the grain boundary to the ZnO grain surface and causing a decrease in the oxygen vacancy concentration. The XPS analysis result shows that the proportion of Co 3+ is significantly higher, so the grain boundary additive is The SCNT donor concentration is the smallest and can effectively increase the energy barrier height and depletion layer width.

表8:各樣品之Mott Schottky分析所獲得物理量之平均值 Table 8: Average values of physical quantities obtained by Mott Schottky analysis of each sample

阻抗分析:Impedance analysis:

將變阻性質較好之ZCM-SCO與ZCM-SCNT在250~300°C下進行交流阻抗與導電活化能分析。由圖10阻抗擬合圖譜顯示,各樣品之總阻值均隨著溫度上升而下降,具負溫度係數(Negative temperature coefficient),因此可利用阿瑞尼斯方程式(Arrhenius equation)計算導電活化能,其結果如圖9與表9所示,其中Grain表示晶粒,Grain boundary表示晶界。由阻抗擬合圖可得知,ZCM-SCMT之總電阻較ZCM-SCO大,在270°C下總阻值分別為1.12×10 7與2.52×10 6Ω。總阻值受晶界個數影響,當晶界個數較少時,其變阻器總阻值相對較小。因此在相同的燒結狀態下,單位體積之ZCM-SCO因晶界個數相對較少,導致其總電阻較低。 The AC impedance and conductive activation energy of ZCM-SCO and ZCM-SCNT with better varistor properties were analyzed at 250~300°C. The impedance fitting diagram in Figure 10 shows that the total resistance of each sample decreases as the temperature increases, with a negative temperature coefficient. Therefore, the conductive activation energy can be calculated using the Arrhenius equation. The results are shown in Figure 9 and Table 9, where Grain represents the grain and Grain boundary represents the grain boundary. It can be seen from the impedance fitting diagram that the total resistance of ZCM-SCMT is larger than that of ZCM-SCO, and the total resistance values at 270°C are 1.12×10 7 and 2.52×10 6 Ω respectively. The total resistance is affected by the number of grain boundaries. When the number of grain boundaries is small, the total resistance of the varistor is relatively small. Therefore, under the same sintering state, the total resistance of ZCM-SCO per unit volume is relatively low due to the relatively small number of grain boundaries.

表9:ZCM-SCO及ZCM-SCNT之晶粒與晶界導電活化能 Table 9: Crystal grain and grain boundary conductive activation energies of ZCM-SCO and ZCM-SCNT

圖11進一步分析ZCM-SCO與ZCM-SCNT在不同溫度下之阻抗與擬合圖譜;表10則提供了ZCM-SCO與ZCM-SCNT在不同溫度下擬合後之等效電阻與電容,其中,R表示等效電阻,CPE是一個恆定相位元件:一種用於擬合數據的等效電路。CPE-T是一種偽電容,CPE-P與奈奎斯特(Nyquist)圖中的半圓形狀有關。透過使用CPE-P和CPE-T以及電阻,可以計算電極的真實電容。此外,底標1表示晶界,底標2表示晶粒。Figure 11 further analyzes the impedance and fitting spectra of ZCM-SCO and ZCM-SCNT at different temperatures; Table 10 provides the equivalent resistance and capacitance of ZCM-SCO and ZCM-SCNT after fitting at different temperatures, where, R represents the equivalent resistance and CPE is a constant phase element: an equivalent circuit used to fit the data. CPE-T is a pseudocapacitor, and CPE-P is related to the semicircular shape in the Nyquist diagram. By using CPE-P and CPE-T and resistors, the true capacitance of the electrodes can be calculated. In addition, the subscript 1 indicates a grain boundary, and the subscript 2 indicates a crystal grain.

表10 Table 10

上述鑑定方法與效能分析證明本發明之氧化鋅變阻器材料具有極優良之性能。以下,進一步以氧化鈷為例,說明本發明材料與製備方法之機制與原理:The above identification methods and performance analysis prove that the zinc oxide varistor material of the present invention has extremely excellent performance. Below, cobalt oxide is further used as an example to illustrate the mechanism and principle of the material and preparation method of the present invention:

圖12為變阻器材料之反應機制圖,分別說明製備過程中各步驟對於材料本體的影響。Figure 12 is a diagram of the reaction mechanism of the varistor material, illustrating the impact of each step in the preparation process on the material itself.

(a)為ZCM煆燒之反應機制圖,將適量之過渡金屬氧化物Co 3O 4及Mn 3O 4添加至ZnO中,並於600°C下煆燒6小時,使過渡元素以三價形式取代ZnO中Zn,以產生較多的施體濃度 ,並同時伴隨鋅空缺 之形成。 (a) is the reaction mechanism diagram of ZCM calcination. Add appropriate amounts of transition metal oxides Co 3 O 4 and Mn 3 O 4 to ZnO, and calcine at 600°C for 6 hours, so that the transition elements become trivalent. Form replaces Zn in ZnO to produce higher donor concentration and , accompanied by zinc vacancies its formation.

(b)為燒結之反應機制圖,將SCO與SCNT加入ZCM中,並於1100°C下燒結2小時。在燒結過程中,因過渡金屬元素會發生還原反應並伴隨氧氣流失,以及坯體在高溫還原反應,也會造成氧流失,伴隨氧空缺之形成,而Co 3+還原成Co 2+,離子半徑變大,故易往晶界移動。 (b) is the reaction mechanism diagram of sintering. SCO and SCNT are added to ZCM and sintered at 1100°C for 2 hours. During the sintering process, transition metal elements will undergo reduction reactions accompanied by oxygen loss, and the reduction reaction of the green body at high temperatures will also cause oxygen loss, accompanied by the formation of oxygen vacancies, and Co 3+ is reduced to Co 2+ , the ionic radius As they become larger, they tend to move toward grain boundaries.

(c)為降溫過程之反應機制,於降溫過程中,過渡金屬元素則發生氧化反應,且此時氣氛中之氧氣會擴散至坯體,位於晶界處之SCO及SCNT具有氧空缺缺陷結構,扮演良好之氧通道,使氧氣可快速擴散至ZnO表面,並與過渡金屬之3d能階相互作用,在晶界上形成介面態之吸附氧 (c) is the reaction mechanism of the cooling process. During the cooling process, the transition metal elements undergo an oxidation reaction, and at this time, the oxygen in the atmosphere will diffuse to the body. The SCO and SCNT located at the grain boundaries have an oxygen vacancy defect structure. Acts as a good oxygen channel, allowing oxygen to quickly diffuse to the ZnO surface, and interacts with the 3d energy level of the transition metal to form an interface state of adsorbed oxygen on the grain boundary. .

(d)為降溫過程後氧空缺與吸附氧之反應機制,降溫過程會有再氧化之反應,此時僅氧空位會被填充,並同時產生電洞。此外因吸附氧帶負電,氧空缺為正,兩者易結合而變成晶格氧。(d) is the reaction mechanism between oxygen vacancies and adsorbed oxygen after the cooling process. There will be a re-oxidation reaction during the cooling process. At this time, only the oxygen vacancies will be filled, and electric holes will be generated at the same time. In addition, since the adsorbed oxygen is negatively charged and the oxygen vacancy is positive, the two easily combine to become lattice oxygen.

據此,證明本發明之全新氧化鋅變阻器材料採用之新穎反應物組合,即於ZnO基底材料中添加過渡金屬氧化物,及作為晶界添加劑之SCO或SCNT,可有效達成I-V曲線中之高非線性指數、高崩潰電壓及低漏電流;並且,將該氧化鋅變阻器材料應用於變阻器,更可提升變阻器整體之變阻性質。Based on this, it is proved that the novel reactant combination used in the new zinc oxide varistor material of the present invention, that is, adding transition metal oxides to the ZnO base material, and SCO or SCNT as grain boundary additives, can effectively achieve high non-linearity in the I-V curve. Linear index, high breakdown voltage and low leakage current; and applying the zinc oxide varistor material to a varistor can improve the overall varistor properties.

〔圖1〕(a) SCO與(b) SCNT之X光繞射圖。 〔圖2〕各樣品之I-V曲線。 〔圖3〕在1100°C燒結後(a) ZnO-SCO (b) ZCM-SCO (c)ZCM-SCNT之微結構及(d)晶粒尺寸分布圖。 〔圖4〕不同樣品對元素Co、Mn、Sr之顏色強度分布。 〔圖5〕ZnO-SCO在高解析掃描式電子顯微鏡之影像。 〔圖6〕不同起始樣品之熱重曲線圖:(a)升溫速率5°C/min (b)降溫速率 2°C/min。 〔圖7〕不同樣品之XPS分析(a)(d)(g)全光譜 (b)(e)(h)Co 2p 及(e)(f)(i)O 1s 之光譜。 〔圖8〕各樣品之Mott Schottky分析所獲得物理量之散布圖。 〔圖9〕ZCM-SCO及ZCM-SCNT之(a)晶粒 (b)晶界導電率。 〔圖10〕(a)ZCM-SCO (b)ZCM-SCNT在250~300°C之阻抗擬合圖譜。 〔圖11〕ZCM-SCO與ZCM-SCNT在不同溫度下之阻抗與擬合圖譜。 〔圖12〕反應機制圖:(a)ZCM煆燒過程之取代反應 (b)變阻器燒結過程之氧空缺形成 (c)降溫過程之界面化學吸附 (d)降溫後晶格氧之形成。 [Figure 1] X-ray diffraction patterns of (a) SCO and (b) SCNT. [Figure 2] I-V curves of each sample. [Figure 3] Microstructure and (d) grain size distribution of (a) ZnO-SCO (b) ZCM-SCO (c) ZCM-SCNT after sintering at 1100°C. [Figure 4] Color intensity distribution of elements Co, Mn, and Sr in different samples. [Figure 5] High-resolution scanning electron microscope image of ZnO-SCO. [Figure 6] Thermogravimetric curves of different starting samples: (a) heating rate 5°C/min (b) cooling rate 2°C/min. [Figure 7] XPS analysis of different samples (a) (d) (g) full spectrum (b) (e) (h) Co 2p and (e) (f) (i) O 1s spectra. [Figure 8] Scatter diagram of physical quantities obtained by Mott Schottky analysis of each sample. [Figure 9] (a) Crystal grain (b) grain boundary conductivity of ZCM-SCO and ZCM-SCNT. [Figure 10] Impedance fitting spectra of (a) ZCM-SCO (b) ZCM-SCNT at 250~300°C. [Figure 11] Impedance and fitting spectra of ZCM-SCO and ZCM-SCNT at different temperatures. [Figure 12] Reaction mechanism diagram: (a) Substitution reaction during ZCM calcination process (b) Oxygen vacancy formation during varistor sintering process (c) Interfacial chemical adsorption during cooling process (d) Formation of lattice oxygen after cooling.

Claims (10)

一種氧化鋅變阻器材料,其特徵係其製備方法之反應物包含過渡金屬氧化物、作為基底材料之氧化鋅、作為添加劑材料之碳酸鍶與氧化鈷,該碳酸鍶與該氧化鈷先經第一次球磨、煆燒、第二次球磨獲得第一添加劑,該氧化鋅與該過渡金屬氧化物煆燒後,煆燒後之該氧化鋅及該過渡金屬氧化物與該第一添加劑進行球磨獲得粉末,該粉末加壓成型並製備生胚,該生胚進行燒結,獲得該氧化鋅變阻器材料。 A zinc oxide varistor material, characterized in that the reactants of its preparation method include transition metal oxides, zinc oxide as a base material, strontium carbonate and cobalt oxide as additive materials, and the strontium carbonate and the cobalt oxide are first processed for the first time Ball milling, calcination, and second ball milling are performed to obtain the first additive. After calcining the zinc oxide and the transition metal oxide, the calcined zinc oxide and transition metal oxide are ball milled with the first additive to obtain powder. The powder is press-molded and a green embryo is prepared, and the green embryo is sintered to obtain the zinc oxide varistor material. 如請求項1所述之氧化鋅變阻器材料,其中,該過渡金屬氧化物包含氧化鈷與氧化錳。 The zinc oxide varistor material of claim 1, wherein the transition metal oxide includes cobalt oxide and manganese oxide. 如請求項1所述之氧化鋅變阻器材料,其中,該碳酸鍶與該氧化鈷於1000℃下進行煆燒8小時。 The zinc oxide varistor material as claimed in claim 1, wherein the strontium carbonate and the cobalt oxide are calcined at 1000°C for 8 hours. 如請求項1所述之氧化鋅變阻器材料,其中,該生胚於1100℃進行燒結。 The zinc oxide varistor material according to claim 1, wherein the green embryo is sintered at 1100°C. 如請求項1所述之氧化鋅變阻器材料,其中,該添加劑材料進一步包含五氧化二鈮及五氧化二鉭,該碳酸鍶、該氧化鈷、該五氧化二鈮及該五氧化二鉭先經第一次球磨、煆燒、第二次球磨獲得第二添加劑,該氧化鋅與該過渡金屬氧化物煆燒後,煆燒後之該氧化鋅及該過渡金屬氧化物與該第二添加劑進行球磨獲得粉末,該粉末加壓成型並製備生胚,該生胚進行燒結。 The zinc oxide varistor material as described in claim 1, wherein the additive material further includes niobium pentoxide and tantalum pentoxide, and the strontium carbonate, the cobalt oxide, the niobium pentoxide and the tantalum pentoxide are first The first ball milling, calcining, and second ball milling are performed to obtain the second additive. After calcining the zinc oxide and the transition metal oxide, the calcined zinc oxide, the transition metal oxide, and the second additive are ball milled. A powder is obtained, which is press-molded and a green embryo is prepared, and the green embryo is sintered. 如請求項5所述之氧化鋅變阻器材料,其中,該生胚於1100℃進行燒結。 The zinc oxide varistor material according to claim 5, wherein the green embryo is sintered at 1100°C. 一種氧化鋅變阻器材料之製備方法,其特徵係包含以下步驟:(a)將添加劑材料球磨後,於1000℃下煆燒8小時,再進行球磨,獲得第一添加 劑;(b)將氧化鋅與過渡金屬氧化物進行煆燒;(c)將步驟(b)中煆燒後之該氧化鋅及該過渡金屬氧化物與該第一添加劑進行球磨獲得粉末;(d)將步驟(c)中球磨後的該粉末加壓成型並製備生胚;(e)將步驟(d)之該生胚於1100℃下燒結2小時;其中,該添加劑材料包含碳酸鍶及氧化鈷。 A method for preparing a zinc oxide varistor material, which is characterized by including the following steps: (a) After ball milling the additive material, calcining it at 1000°C for 8 hours, and then ball milling to obtain the first additive material agent; (b) calcining zinc oxide and transition metal oxide; (c) ball milling the calcined zinc oxide and transition metal oxide in step (b) with the first additive to obtain powder; ( d) pressurize the powder after ball milling in step (c) and prepare a green embryo; (e) sinter the green embryo in step (d) at 1100°C for 2 hours; wherein the additive material includes strontium carbonate and Cobalt oxide. 如請求項7所述之氧化鋅變阻器材料之製備方法,其中,該過渡金屬氧化物包含氧化鈷與氧化錳。 The method for preparing a zinc oxide varistor material as claimed in claim 7, wherein the transition metal oxide includes cobalt oxide and manganese oxide. 如請求項7所述之氧化鋅變阻器材料之製備方法,其中,步驟(a)之添加劑材料進一步包含五氧化二鈮及五氧化二鉭。 The method for preparing a zinc oxide varistor material as described in claim 7, wherein the additive material in step (a) further includes niobium pentoxide and tantalum pentoxide. 一種氧化鋅變阻器,其特徵係包含如請求項1至6中任一項所述之氧化鋅變阻器材料。 A zinc oxide varistor, characterized by comprising the zinc oxide varistor material described in any one of claims 1 to 6.
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US4959262A (en) * 1988-08-31 1990-09-25 General Electric Company Zinc oxide varistor structure
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