KR101871956B1 - Mother plate and producing method of the same, and producing method of the same - Google Patents

Abstract

The present invention relates to a base plate, a method of manufacturing a base plate, and a method of manufacturing a mask. The base plate according to the present invention is a mother plate used in manufacturing a mask by electroforming and is made of a conductive single crystal silicon material and has a substrate 21 on which an engraved pattern 28 is formed on one surface, (25, 26, 27) formed on the surface of the substrate (21) formed with the recessed pattern (28) and the side face of the engraved pattern (28).

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing a mask,

The present invention relates to a base plate, a method of manufacturing a base plate, and a method of manufacturing a mask. More particularly, the present invention relates to a base plate, a base plate manufacturing method, and a manufacturing method of a mask, which can form a plating film by using the electroplating method and form a tapered pattern on the plating film.

Recently, electroforming methods have been studied in the manufacture of thin plates. In the electroplating method, an anode body and a cathode body are immersed in an electrolytic solution, and a power source is applied to electrodeposit a metal thin plate on the surface of the cathode body, so that an ultra thin plate can be manufactured and mass production can be expected.

On the other hand, FMM (Fine Metal Mask) method for depositing an organic material at a desired position by bringing a thin film metal mask (Shadow Mask) into close contact with a substrate is mainly used as a technique of forming a pixel in an OLED manufacturing process.

FIGS. 1 and 2 are schematic views showing a conventional FMM (Fine Metal Mask) manufacturing process.

Referring to FIG. 1, a conventional mask manufacturing method includes: providing a thin metal plate 1 to be used as a mask (FIG. 1A); patterning PR (photoresist) 2 on a thin metal plate 1 (2) (FIG. 1 (b)) so as to have a pattern, and a mask 3 having a pattern P through etching is manufactured.

Referring to FIG. 2, a conventional mask manufacturing method using plating includes preparing a substrate 4 (FIG. 2 (a)) and coating a PR 2 having a predetermined pattern on a substrate 4 (Fig. 2 (b)). Subsequently, plating is performed on the substrate 4 to form a thin metal plate 3 (Fig. 2 (c)). Next, the mask 3 (or the thin metal plate 3) on which the pattern P is formed is removed from the substrate 4 (Fig. 2 (d)) e).

In the above-described conventional FMM manufacturing process, there is a problem that the process time and cost are increased and the productivity is lowered because the PR is coated on the substrate and the etching process is performed each time.

In addition, it is general that the substrate 4 used in the mask manufacturing using the conventional plating uses a metal material such as SUS and Ti. Such a substrate may have metal oxides formed on the surface thereof, and impurities may be introduced into the metal substrate during its manufacturing process. These defects may cause unevenness of the surface of the metal foil 3 when plating is performed on the substrate 4 to form the metal foil 3. This is the result of an uneven application of the electric field due to the defect. Even a minute defect on the surface of the substrate 4 may have an adverse effect in realizing an ultra high resolution pixel of UHD class or higher.

In addition, the uniformity of the deposition may be lowered and errors may occur due to the shadow effect due to the vertical pattern of the FMM. Thus, a method of minimizing an error by forming a pattern of a mask in a tapered shape has been proposed. However, since a separate process is involved to form the tapered shape, the process time and cost are increased, and the productivity is lowered.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a mask, a method of manufacturing a mask, and a method of manufacturing a mask, which can manufacture a mask having defects and having uniform surface characteristics, The purpose is to provide.

Another object of the present invention is to provide a base plate, a base plate manufacturing method, and a manufacturing method of a mask capable of manufacturing a mask having a pattern only by a plating process.

Another object of the present invention is to provide a base plate, a base plate manufacturing method, and a manufacturing method of a mask, which can form a mask pattern having a tapered shape and a tapered shape by a plating process without any additional process.

The present invention also provides a method of manufacturing a base plate, which can be repeatedly reused in a subsequent electroplating process when a base plate used as a cathode body is manufactured once, thereby reducing process time and cost, It is another object of the present invention to provide a manufacturing method of a base plate and a manufacturing method of a mask.

The above object of the present invention can be achieved by a mother plate used for manufacturing a mask by electroforming, the substrate being made of a conductive single crystal silicon and having a relief pattern formed on one surface thereof; And an insulating portion formed on the side of the engraved pattern and the surface of the substrate on which the engraved pattern is formed.

A plating film is formed from the surface of the substrate exposed on the lower surface of the engraved pattern, and formation of the plating film in the insulating portion is prevented, so that the plating film can have a pattern.

The side cross-sectional shape of the engraved pattern may be a reverse tapered shape.

The angle formed between the direction parallel to the base plate and the side direction of the engraved pattern may be 45 to 65 degrees.

The depth of the engraved pattern may be from 5 탆 to 20 탆.

An electric field capable of forming a plated film on the surface of the substrate exposed on the lower surface of the engraved pattern may act.

Even if the electroplating is repeatedly performed, the insulating portion may remain.

The insulating portion may be formed of at least one of silicon oxide and silicon nitride.

The insulating portion may be formed on the other surface except the other surface facing the one surface of the substrate.

The above object of the present invention can be achieved by a mother plate used for manufacturing a mask by electroforming, wherein the substrate of the base plate is made of a conductive single crystal silicon material, and has a first region having conductivity on one surface, And the second area is a second area, the lower surface of the engraved pattern of the substrate is the first area, and the surface of the remaining substrate is the second area.

The above object of the present invention can be also achieved by a method for manufacturing a mother plate used in manufacturing a mask by electroforming, comprising the steps of: (a) providing a substrate made of a conductive single crystal silicon material; (b) forming a first insulating layer on at least one side of the substrate; (c) forming a patterned photoresist layer on the first insulating layer; (d) etching the first insulating layer and the substrate through the photoresist pattern to form a depressed pattern on one surface of the substrate; (e) removing the photoresist layer, and forming a second insulating layer on the first insulating layer and the engraved pattern; And (f) etching the second insulating layer on the lower surface of the engraved pattern to expose the substrate.

In the step (b), the first insulating layer may be formed of at least one of silicon oxide and silicon nitride.

(d), the first insulating layer and the base material are dry-etched to form an engraved pattern having a tapered shape in the side cross-sectional shape.

In the step (d), the first insulating layer may include a remaining side pattern having a pattern that is less etched than the substrate and narrower than the width of the top of the engraved pattern.

The side pattern may be used as an etch mask to prevent etching of the second insulating layer formed on the side of the engraved pattern during step (f).

(f) comprises the steps of: (f1) forming a patterned photoresist layer on the second insulating layer, the patterned photoresist layer having a pattern width corresponding to the width of the lower surface of the engraved pattern; (f2) dry-etching the second insulating layer on the lower surface of the engraved pattern to expose the substrate; And (f3) removing the photoresist layer.

(g) etching the insulating layer on the other surface opposite to the one surface of the substrate to expose the substrate.

The above object of the present invention is also achieved by a method of manufacturing a mask by electroforming, comprising the steps of: preparing a substrate having a conductive pattern of a single crystal silicon and having an engraved pattern on one surface thereof, A plating film is formed on the surface of the substrate exposed on the lower surface of the engraved pattern to form a mask body and a plating film is formed on the surface of the insulating body of the cathode body, Is prevented and constitutes a mask pattern.

The above object of the present invention is also achieved by a method of manufacturing a mask by electroforming comprising the steps of: (a) providing a substrate made of a conductive single crystal silicon material; (b) forming a first insulating layer on at least one side of the substrate; (c) forming a patterned photoresist layer on the first insulating layer; (d) etching the first insulating layer and the substrate through the photoresist pattern to form a depressed pattern on one surface of the substrate; (e) removing the photoresist layer, and forming a second insulating layer on the first insulating layer and the engraved pattern; And (f) etching the second insulating layer on the lower surface of the engraved pattern to expose the substrate to produce a cathode body; And (g) a step of immersing at least a part of an anode body disposed apart from the negative electrode and the negative electrode in a plating solution, and applying an electric field between the negative electrode and the positive electrode, Wherein a plating film is formed from the surface of the exposed substrate to constitute a mask body and formation of a plating film on the surface of the negative electrode body on which the first insulating layer and the second insulating layer are formed is prevented to constitute a mask pattern .

According to another aspect of the present invention, there is provided an OLED pixel deposition method using a mask manufactured by electroforming, the method comprising the steps of: (a) mapping a mask manufactured using the mask manufacturing method to a target substrate; (b) supplying an organic material source to a target substrate through a mask; And (c) depositing an organic material source on the target substrate through the pattern of the mask.

According to the present invention configured as described above, defects are prevented and a mask having uniform surface characteristics can be manufactured.

Further, according to the present invention, there is an effect that a mask having a pattern can be produced only by a plating process.

Further, according to the present invention, there is an effect that a mask pattern having a tapered shape and a tapered shape can be formed only by a plating process without a separate process.

Further, according to the present invention, once a base plate used as a cathode body is manufactured, it can be reused repeatedly in a subsequent electroplating process, thereby reducing process time, cost, and productivity .

FIGS. 1 and 2 are schematic views showing a conventional FMM (Fine Metal Mask) manufacturing process.
3 is a schematic view showing an OLED pixel deposition apparatus using FMM according to an embodiment of the present invention.
FIG. 4 is a schematic view showing a electroplate plating apparatus according to an embodiment of the present invention. FIG.
5 is a schematic view illustrating a mask according to an embodiment of the present invention.
6 is a schematic view showing an outer surface of a base plate according to an embodiment of the present invention.
7 to 13 are schematic views showing a manufacturing process of a base plate according to an embodiment of the present invention.
FIGS. 14 and 15 are schematic views illustrating a mask manufacturing process using a base plate according to an embodiment of the present invention.

The following detailed description of the invention refers to the accompanying drawings, which illustrate, by way of illustration, specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention. It should be understood that the various embodiments of the present invention are different, but need not be mutually exclusive. For example, certain features, structures, and characteristics described herein may be implemented in other embodiments without departing from the spirit and scope of the invention in connection with one embodiment. It is also to be understood that the position or arrangement of the individual components within each disclosed embodiment may be varied without departing from the spirit and scope of the invention. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is to be limited only by the appended claims, along with the full scope of equivalents to which such claims are entitled, if properly explained. In the drawings, like reference numerals refer to the same or similar functions throughout the several views, and length and area, thickness, and the like may be exaggerated for convenience.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art can easily carry out the present invention.

3 is a schematic view showing an OLED pixel deposition apparatus 200 using a fine metal mask (FMM) 100 according to an embodiment of the present invention.

3, the OLED pixel deposition apparatus 200 includes a magnet plate 300 in which a magnet 310 is accommodated and a cooling water line 350 is disposed, and a plurality of organic material sources 600 (Not shown).

A target substrate 900 such as a glass on which the organic material source 600 is deposited may be interposed between the magnet plate 300 and the source evaporator 500. The FMM 100 for causing the organic material source 600 to be deposited on a pixel-by-pixel basis may be closely adhered to the target substrate 900 or may be disposed in close proximity. The magnet 310 generates a magnetic field and can be brought into close contact with the target substrate 900 by a magnetic field.

The deposition source supply unit 500 reciprocates the right and left paths and can supply the organic material source 600. The organic material sources 600 supplied from the deposition source supply unit 500 pass through the pattern formed on the FMM mask 100, May be deposited on one side of the substrate 900. The deposited organic material source 600 that has passed through the pattern of the FMM mask 100 may act as the pixel 700 of the OLED.

The pattern of the FMM mask 100 may be formed to be inclined S (or formed into a tapered shape S) in order to prevent non-uniform deposition of the pixel 700 by a shadow effect. Organic materials 600 passing through the pattern in a diagonal direction along the sloped surface may also contribute to the formation of the pixel 700, so that the pixel 700 can be uniformly deposited in thickness as a whole.

Fig. 4 is a schematic view showing the electroplate plating apparatus 10 according to an embodiment of the present invention. Although FIG. 4 shows the planar electroplating apparatus 10, the present invention is not limited to the embodiment shown in FIG. 4, and it can be applied to all known electroplating apparatuses such as a planar electroplating apparatus and a continuous electroplating apparatus Leave.

4, a electrophotographic plating apparatus 10 according to an embodiment of the present invention includes a plating vessel 11, a cathode body 20, an anode body 30, a power supply unit 40 ). A means for separating the plating film 15 (or the thin metal plate 15) to be used as a mask from the negative electrode 20, a means for cutting Time).

A plating liquid (12) is contained in the plating tank (11). The plating liquid 12 may be a material of the plating film 15 to be used as a mask as an electrolytic solution. In one embodiment, when a thin plate of Invar, which is an iron nickel alloy, is produced as the plating film 15, a mixed solution of a solution containing Ni ions and a solution containing Fe ions may be used as the plating solution 12. [ In another embodiment, when a super Invar thin plate, which is an iron nickel cobalt alloy, is made of the plated film 15, a mixed solution of a solution containing Ni ions, a solution containing Fe ions, and a solution containing Co ions It may be used as the plating liquid 12. Inverted thin plate and super thinned thin plate can be used as FMM (Fine Metal Mask) and Shadow Mask in the pixel manufacturing of OLED. Then, the thin plate-environment is a thermal expansion coefficient of about 1.0 X 10 ^-6 / ℃, Super Invar sheet was about 1.0 X the thermal expansion coefficient of 10 ^-7 / ℃ So that the pattern shape of the mask is not likely to be deformed by heat energy, and thus it can be used in high-resolution OLED manufacturing. In addition to this, the plating liquid 12 for the intended plating film 15 can be used without limitation. In the present specification, it is assumed that the manufacturing of the in-put thin plate 15 is assumed as a main example.

A plating liquid 12 can be supplied from an external plating liquid supply means (not shown) to the plating tank 11 and a circulating pump (not shown), a plating liquid 12 (not shown) for circulating the plating liquid 12 in the plating tank 11, And a filter (not shown) for removing impurities of the semiconductor device.

The negative electrode body 20 has a flat plate shape and the like on one side, and the whole of the negative electrode body 20 can be immersed in the plating liquid 12. 4 shows a state in which the anode 20 and the anode 30 are arranged vertically but may be arranged horizontally. In this case, at least a part or all of the anode 20 in the plating solution 12 Can be immersed.

The cathode body (20) may include a conductive material as the substrate (21).

In the case of a metal substrate, metal oxides may be formed on the surface, impurities may be introduced in the course of metal production, and in the case of a polycrystalline silicon substrate, an inclusion or a grain boundary may exist. In the case of a conductive polymer substrate Is likely to contain impurities, and strength. Acid resistance may be weak. Due to defects such as impurities, inclusions, grain boundaries, etc., a uniform electric field is not applied to the negative electrode of the above-mentioned material, so that a part of the plating film 15 can be formed non-uniformly. Unevenness of the plated film 15 and the plated film pattern in implementing ultra high image quality of UHD class or higher may adversely affect pixel formation. Further, in order to remove such defects, an additional process for removing metal oxide, impurities and the like may be performed, and another defect may be caused in the cathode material in this process.

Therefore, the present invention is characterized in that the conductive base material 21 of the anode body 20 uses a substrate made of a single crystal silicon material. The substrate 21 may be doped with a high concentration of about 10 ¹⁹ so as to have conductivity. The doping may be performed on the entire surface of the substrate 21 or may be performed only on the surface portion of the substrate 21. [

In the case of doped monocrystalline silicon, there is no defect, so that there is an advantage that a uniform plating film 15 due to the formation of a uniform electric field on the entire surface at the time of electroplating can be produced. The FMM 100 manufactured through the uniform plating film 15 can further improve the image quality level of OLED pixels. Further, since there is no need to carry out an additional process for removing and eliminating defects, there is an advantage that the process cost is reduced and the productivity is improved.

The advantage of using the silicon base material 21 to form the insulating portion 25 (or insulating film) only by oxidizing and nitriding the surface of the base material 21 have. The insulating portion 25 serves to prevent the electrodeposition of the plating film 15 and can form a pattern of the plating film 15. [

A plating film 15 may be deposited on the surface of the anode body 20 and a pattern corresponding to the insulating portion 25 of the anode body 20 may be formed on the plating film 15. [ The negative electrode body 20 of the present invention can be formed up to a pattern in the process of forming the plating film 15 so that the negative electrode body 20 is referred to as a "mother plate" 20 or a "mold" Used in combination. The specific configuration of the surface of the base plate 20 (or the cathode body 20) will be described later.

The anode body 30 is provided at a predetermined interval so as to face the anode body 20 and has a flat plate shape or the like which is flat on one side corresponding to the anode body 20, It can be immersed. The anode body 30 may be made of an insoluble material such as titanium (Ti), iridium (Ir), ruthenium (Ru), or the like. The anode body 20 and the anode body 30 may be spaced apart by several centimeters.

The power supply unit 40 can supply a current necessary for electroplating to the anode body 20 and the anode body 30. The (-) terminal of the power supply unit 40 may be connected to the anode body 20, and the (+) terminal may be connected to the anode body 30.

5 is a schematic diagram illustrating a mask 100 (100a, 100b) according to an embodiment of the present invention.

5, there is shown a mask 100 (100a, 100b) manufactured using a electroplate plating apparatus 10 comprising a base plate 20 (or cathode 20) of the present invention. The mask 100a shown in FIG. 5A is a stick-type mask, and both sides of the stick can be welded and fixed to the OLED pixel deposition frame. The mask 100b shown in FIG. 5B is a plate-type mask and can be used in a pixel forming process with a large area. 5 (c) is an enlarged cross-sectional view taken along line A-A 'in (a) and (b) of FIG.

A plurality of display patterns DP may be formed on the body of the mask 100 (100a, 100b). The display pattern DP is a pattern corresponding to one display such as a smart phone. When the display pattern DP is enlarged, a plurality of pixel patterns PP corresponding to R, G, and B can be confirmed. The pixel patterns PP may have a tapered shape or a tapered shape (see Fig. 5 (c)). A large number of pixel patterns PP constitute one display pattern DP and a plurality of display patterns DP may be formed on the mask 100 (100a, 100b).

That is, in this specification, the display pattern DP is not a concept representing a pattern, but should be understood as a concept that a plurality of pixel patterns (PP) corresponding to one display are clustered.

The mask 100 of the present invention is characterized in that it is directly manufactured with a plurality of display patterns DP and pixel patterns PP without having to undergo a separate patterning process. The mask 100 of the present invention is characterized in that it is manufactured with a tapered pattern (pixel pattern PP) without having to undergo a separate taper forming step. In other words, the plating film 15 electrodeposited on the surface of the base plate 20 (or the cathode body 20) in the electroplating apparatus is electrodeposited while the display pattern DP and the tapered pixel pattern PP are formed . Hereinafter, the display pattern DP and the pixel pattern PP may be used in combination as a mask pattern. Although the pixel pattern PP is formed as an enlarged portion of the base plate 20 in the following description, since the clustered concept of the pixel pattern PP is the display pattern DP, It should be understood that the pattern (PP) / display pattern (DP) are formed at the same time.

6 is a schematic view showing an outer surface of a base plate 20 according to an embodiment of the present invention. 6 (a) is a plan view showing the plate-shaped base plate 20 of the flat electroforming apparatus 10, and Fig. 6 (b) is an enlarged cross-sectional view taken along line B-B 'in Fig. 6 (a).

6 (a), the outer surface (surface) of the base plate 20 (or the cathode body 20) is covered with a region where the base material 21 is exposed and a region where the insulating portion 25 is formed Can be distinguished.

The region to which the base material 21 is exposed refers to the surface portion (first region) of the base plate 20 in which the plating film 15 (or the mask 100) is formed by being substantially electrodeposited, have. An electric field necessary for plating can be formed between the region where the base material 21 of the anode body 20 is exposed and the anode body 30 and the plating film 15 can be electrodeposited in this space.

The region where the insulating portion 25 is formed is a portion (second region) covered with an insulating film such as silicon oxide, silicon nitride, or the like on one surface of the substrate 21 so as to prevent the formation of the plating film 15. An electric field may not be formed between the region covered with the insulating portion 25 of the anode body 20 and the anode body 30 or only a weak electric field may be formed to such an extent that plating is difficult to be performed, The film 15 can not be formed and a pattern, a hole, or the like of the plating film 15 can be formed.

Referring to FIG. 6B, the engraved pattern 28 may be formed on one surface (upper surface) of the substrate 21. The engraved pattern 28 may have a shape having a smaller width from the upper portion to the lower portion. For example, the side sectional shape of the engraved pattern 28 may be a reverse taper shape, and the side of the engraved pattern 28 may have an inclined shape S so that the width becomes smaller from the upper portion to the lower portion . Also, if the engraved pattern 28 satisfies that the width decreases from the top to the bottom, the side may be rounded or a step may be formed.

The angle between the base plate 20 and the side surface of the engraved pattern 28, that is, the angle (taper angle) between the direction parallel to the base plate 20 and the side direction of the engraved pattern 28 can be about 45 to 65 have. The depth at which the engraved pattern 28 is formed may be about 5 占 퐉 to 20 占 퐉, but is not limited thereto.

The insulating portion 25 may be formed of a material having an insulating property, and may be silicon oxide, silicon nitride, or the like, which is an insulating material based on the material of the substrate 21. [ The thickness of the insulating portion 25 may be about 0.1 to 0.5 占 퐉, but may be changed within a range of objects having an insulating property so that the plating film 15 is not electrodeposited.

The insulating portion 25 may be formed on the surface (upper surface) 25a of the base material 21 on which the engraved pattern 28 is formed and the side surface 25b of the engraved pattern 28. That is, the insulating portion 25 (25a, 25b) may be formed in the remaining portion except for the lower surface of the engraved pattern 28. [ The insulating portion 25 is not formed on the lower surface of the engraved pattern 28 and the portion 21a of the base material 21 can be exposed. The substrate 21 may be exposed without forming the insulating portion 25 between the display pattern DP and the neighboring display pattern DP where the plating film 15 needs to be formed (A)).

The portion of the base plate 20 corresponding to the insulating portion 25 can constitute the pixel pattern PP of the plating film 15. [ Since the insulating portion 25 is formed on the base material 21 in such a manner as to have a larger width and a taper shape from the upper portion to the lower portion, the pixel pattern PP may have a corresponding shape. The plated film 15 is formed from the surface 21a of the base material 21 exposed on the lower surface of the engraved pattern 28 so that the plated film 15 has a shape in which the width becomes smaller from the upper portion to the lower portion, . In other words, the portion of the base material 21 exposed in the base plate 20 constitutes the body of the plating film 15, and the portion corresponding to the insulating portions 25 (25a and 25b) forms the pattern of the plating film 15 can do.

Since the plating film 15 on which the display pattern DP and the pixel pattern PP are formed can be used as a shadow mask, FMM 100 (100a, 100b) (see FIG. 5) in the OLED pixel process, The width may be formed to be less than 30 mu m so as to be suitable for high resolution pixel deposition.

The insulating portion 25 may remain as a component of the base plate 20 integrated with the base material 21 on one side of the base material 21 while the electroplating is repeatedly performed. That is, even in the sequential process of separating the plating film 15 from the base plate 20 after the electrodeposition of the plating film 15 on the base plate 20 and washing the base plate 20, May remain on one side of the substrate 21 without being physically or chemically removed, damaged or separated. This is because the substrate 21 is made of a single crystal silicon material and the insulating portion 25 is made of silicon oxide, silicon nitride, or the like formed on the substrate 21 as a base. Therefore, it is referred to as a base plate, a mold, and a cathode body including the insulating portion 25.

As described above, according to the present invention, since the insulating portion 25 may remain in the repeated process, the base plate 20 (or the anode 20, the mold 20)] can be reused continuously. This can directly lead to reduction of process time, cost, and productivity.

7 to 13 are schematic views showing a manufacturing process of a base plate according to an embodiment of the present invention.

A method of manufacturing a mother plate according to the present invention is a method of manufacturing a mother plate 20 used in manufacturing a mask by electroforming, comprising the steps of: (a) providing a substrate 21 made of a conductive single crystal silicon; b) forming a first insulating layer 26 on at least one side of the substrate 21; c) forming a photoresist layer 50 patterned 51 on the first insulating layer 26 (D) etching the first insulating layer 26 and the base material 21 through the photoresist pattern 51 to form an engraved pattern 28 on one surface of the base material 21; (e) Removing the resist layer 50 and forming a second insulating layer 27 on the first insulating layer 26 and the engraved pattern 28 and (f) forming a second insulating layer 27 on the lower surface of the engraved pattern 28 2 insulating layer 27c to expose the substrate.

Specifically, first, referring to Fig. 7, a conductive base material 21 is prepared. The base material 21 is a material used for the anode body 20 and can be made of a single crystal silicon base material 21. It has been described that highly doped single crystal silicon can be used for conductivity.

Next, the first insulating layer 26 may be formed on at least one surface of the base material 21. [ The first insulation layer 26 may be formed by thermal oxidation or thermal nitridation. The first insulating layer 26 made of silicon oxide or silicon nitride may have a thickness of about 0.1 to 0.5 탆. Hereinafter, it is assumed that the first insulating layer 26 is formed on the upper surface, the lower surface, and the side surface of the substrate 21, respectively.

Next, referring to FIG. 8, a photoresist layer 50 patterned 51 may be formed on the first insulating layer 26. The pattern 51 may be formed through the patterning process after the photoresist layer 50 is formed on the entire surface of the first insulating layer 26 and the photoresist layer 50 having been patterned 51 may be directly formed . The formation of the photoresist layer 50 and the patterning 51 may be performed using known techniques.

9A, the first insulating layer 26 and the base material 21 are etched through the photoresist pattern 51 to form a depressed pattern (not shown) on one surface (upper surface) of the base material 21, (28) can be formed.

Etch can be dry etched. The wet etching can stop the etching at the (111) plane of the single crystal silicon, and the taper angle can be restricted. Thus, the taper angle can be adjusted using a dry elongation angle. The angle (taper angle) between the direction parallel to the lower surface of the engraved pattern 28 and the direction parallel to the side surface may be about 45 to 65 degrees. The engraved pattern 28 may be etched to have a depth of about 5 [mu] m to 20 [mu] m. The known dry etching method can be used without limitation in the formation of the depressed pattern 28 having the inverted tapered shape in the cross-sectional shape through the dry etching.

On the other hand, as shown in FIG. 9 (b), the first insulating layer 26 can be etched less than the substrate 21. Particularly, as the thickness of the first insulating layer 26 is thicker, the first insulating layer 26 can be less etched and the first insulating layer 26 can be less etched according to the etching ratio of the first insulating layer 26 and the substrate 21 . Then, undercut of the first insulating layer 26 may be formed in which the width of the engraved pattern 28 is wide and etched. That is, the first insulating layer 26 may further include a remaining side pattern 26a having a pattern narrower than the width of the upper end of the engraved pattern 28. [

In the etching process of the second insulating layer 27, the side pattern 26a is removed from the vertical gas at the upper portion of the engraved pattern 28, as described later in Figs. 12 and 13, There is a room for utilization as a mask of the second insulating layer 27b formed on the side surface of the second insulating layer 27b. Therefore, only the second insulating layer 27c formed on the lower surface of the engraved pattern 28 can be etched while stably leaving the second insulating layer 27b. Hereinafter, the case of FIG. 9 (a) will be described as a main example.

Next, referring to FIG. 10, the photoresist layer 50 can be removed. It is possible to remove only the photoresist layer 50 and use any known technique that does not affect the substrate 21 and the first insulating layer 26 without limitation.

Next, referring to FIG. 11, a second insulating layer 27 (27a, 27b, 27c) may be formed on the first insulating layer 26 and the engraved pattern 28. FIG. The second insulation layer 27 may be formed by thermal oxidation or thermal nitridation. The second insulating layer 27 made of silicon oxide or silicon nitride may have a thickness of about 0.05 to 0.3 탆.

The second insulating layer 27 is formed on the first insulating layer 26 so that the area where the plating is prevented can be more stably formed by making the insulating portions 25 (26, 27) thicker. At the same time, the lower surface (or the exposed surface 21a of the base material 21) and the side surfaces of the engraved pattern 28 can cover the covers 27a and 27b. This can serve as a basis for etching only the second insulating layer 27a on the lower surface of the engraved pattern 28 and leaving the second insulating layer 27b on the side in the next step.

Next, referring to FIG. 12A, a photoresist layer 60 patterned 61 may be formed on the second insulating layer 27. The photoresist pattern 61 preferably has a pattern width corresponding to the width of the lower surface of the engraved pattern 28. [ The pattern 61 may be formed through the patterning process after the photoresist layer 60 is formed on the entire surface of the second insulating layer 27 and the photoresist layer 60 having been patterned 61 may be directly formed . The formation of the photoresist layer 60 and the patterning 61 may be performed using known techniques.

Next, referring to FIG. 13, the second insulating layer 27b on the lower surface of the engraved pattern 28 may be dry etched to expose the substrate 21a. The base material 21a on the lower surface of the engraved pattern 28 is exposed and the photoresist layer 60 can be removed.

On the other hand, as shown in FIG. 12B, the step of forming the photoresist layer 60 of FIG. 12A may be omitted and dry etching E may be performed immediately. The second insulating layer 27a and 27b on the lower surface and the side surface of the engraved pattern 28 are etched by a similar method to the blank etching method while the second insulating layer 27b is left. Although the second insulating layer 27 is formed on the first insulating layer 26 and the engraved pattern 28, the thickness in the vertical direction of the second insulating layer 27 for each formed region may be different.

The thickness t1 of the second insulating layer 27b in the vertical direction is smaller than the thickness t2 of the second insulating layer 27a on the lower surface of the engraved pattern 28 (t2). In addition, since the etching gas is supplied vertically during the dry etching (E), the etching in the vertical direction proceeds, and the second insulating layer 27a having a small thickness is formed in the second insulating layer 27b ). ≪ / RTI > The second insulating layer 27b on the side of the engraved pattern 28 remains even though the second insulating layer 27a is etched to expose the substrate 21a through the etching process so that the structure shown in FIG. .

In addition, the insulating layer 26, 27 on the other surface (lower surface) of the substrate 21 can be further etched to expose the other surface (lower surface) 21b of the substrate 21. A low resistance electrode may be attached through the exposed lower surface 21b and an electric field may be applied through the low resistance electrode. 13, the lower surface 21b of the substrate 21 is exposed. However, other portions may be exposed within a range of the purpose of connecting the electrodes and receiving an electric field, and the substrate 21 may be directly exposed An electric field may be applied.

14 and 15 are schematic views showing a process of manufacturing a mask using a base plate 20 according to an embodiment of the present invention. In Figs. 14 and 15, the plate-like negative electrode 20 and the positive electrode 30 used in a general planar electroplating method will be described on the assumption.

First, referring to Fig. 14, an anode body (not shown) facing the base plate 20 (or the anode body 20) is prepared. An anode body (not shown) is immersed in a plating liquid (not shown), and all or a part of the base plate 20 may be immersed in a plating liquid (not shown). The plating film 15 can be formed by electrodeposition at the surface (base material 21a) of the base plate 20 due to the electric field formed between the base plate 20 (or the anode body 20) and the anode body opposed thereto. The plated film 15 is formed only in the space in the engraved pattern 28 of the base plate 20 and the plated film 15 is not formed in the region of the insulating portion 25.

It is preferable to form the plated film 15 only until the upper end of the engraved pattern 28 is turned over since the plated film 15 is thickened by electrodeposition from the base material 21a. That is, the thickness of the plating film 15 may be smaller than the depth of the engraved pattern 28. Since the plated film 15 is filled in the space in the engraved pattern 28 and electrodeposited, the plated film 15 can be produced having the same taper shape as the engraved pattern 28.

Next, referring to Fig. 15, the base plate 20 (or the cathode body 20) is lifted out of the plating liquid (not shown). When the plating film 15 and the base plate 20 are separated from each other outside the plating liquid, the portion where the plating film 15 is formed constitutes the mask 100 (or the mask body), and the plating film 15 is not formed A pixel pattern PP, a display pattern DP (or a mask pattern) can be formed.

As described above, since the present invention performs electroplating from a base material 21 made of a single crystal silicon material, it is effective to manufacture a mask 100 having defects and having uniform surface characteristics. In addition, there is an effect that the mask 100 having a pattern can be produced only by the step of forming the plating film 15 in the electroplating process. In addition, the present invention has an effect that a mask pattern having a tapered shape S and a tapered shape can be formed only by a plating process without a separate process. Further, once the base plate 20 (or the anode body 20) is manufactured, it can be reused repeatedly thereafter, thereby reducing the processing time and cost, and improving the productivity.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken in conjunction with the present invention. Variations and changes are possible. Such variations and modifications are to be considered as falling within the scope of the invention and the appended claims.

10: Electroplating device
11: Plating tank
12: plating solution
15: plated film
20: cathode body, base plate, mold
21: substrate
25:
26: first insulating layer
27: second insulating layer
28: engraved pattern
30: anode
40: Power supply
50, 60: photoresist layer
51, 61: photoresist pattern
100: mask, shadow mask, FMM (Fine Metal Mask)
200: OLED pixel deposition apparatus
DP: Display pattern
PP: pixel pattern

Claims (20)

As a mother plate used in manufacturing a mask for forming an OLED pixel by electroforming,
A substrate made of a conductive single crystal silicon material and having an engraved pattern formed on one surface thereof; And
The surface of the substrate on which the engraved pattern is formed and the insulating portion
/ RTI >
A uniform electric field is formed on the entire surface of the single crystal silicon exposed on the lower surface of the engraved pattern to form a plated film of Invar or Super Invar material and the formation of the plated film in the insulated portion is prevented, And the plated film having the pattern is an FMM (Fine Metal Mask). delete The method according to claim 1,
Wherein the side cross-sectional shape of the engraved pattern is a reverse tapered shape. The method according to claim 1,
Wherein the angle between the direction parallel to the base plate and the side direction of the engraving pattern is 45 to 65 degrees. The method according to claim 1,
And the depth of the engraved pattern is 5 to 20 占 퐉. The method according to claim 1,
Wherein an electric field capable of forming a plated film acts on the surface of the substrate exposed on the lower surface of the engraved pattern. The method according to claim 1,
Wherein the insulating part remains even after repeating the electroplating. The method according to claim 1,
Wherein the insulating portion is formed of a material of at least one of silicon oxide and silicon nitride. The method according to claim 1,
And the insulating portion is formed on the remaining surface except the other surface opposed to the one surface of the substrate. As a mother plate used in manufacturing a mask for forming an OLED pixel by electroforming,
The substrate of the base plate is made of a conductive single crystal silicon and is divided into a first region having conductivity on one surface and a second region having nonconductiveity,
The lower surface of the engraved pattern of the substrate is the first region, the surface of the remaining substrate is the second region,
A uniform electric field is formed on the entire surface of the first region to form a plated film of Invar or Super Invar material and prevents the formation of a plated film on the second region so that the plated film has a pattern, Is a fine metal mask (FMM). A method of manufacturing a mother plate used in manufacturing a mask for forming an OLED pixel by electroforming,
(a) providing a substrate of a conductive single crystal silicon material;
(b) forming a first insulating layer on at least one side of the substrate;
(c) forming a patterned photoresist layer on the first insulating layer;
(d) etching the first insulating layer and the substrate through the photoresist pattern to form a depressed pattern on one surface of the substrate;
(e) removing the photoresist layer, and forming a second insulating layer on the first insulating layer and the engraved pattern; And
(f) etching the second insulating layer on the lower surface of the engraved pattern to expose the substrate
/ RTI >
A uniform electric field is formed on the entire surface of the single crystal silicon exposed on the lower surface of the engraved pattern to form a plated film of Invar or Super Invar material and the plating is performed in the first insulating layer and the second insulating layer, Wherein formation of the film is prevented so that the plated film has a pattern, and the plated film having the pattern becomes FMM (Fine Metal Mask). 12. The method of claim 11,
(b), the first insulating layer is formed of at least one of silicon oxide and silicon nitride. 12. The method of claim 11,
(d) dry-etching the first insulating layer and the base material to form an engraved pattern having an inverted taper shape in a side cross-sectional shape. 14. The method of claim 13,
wherein in the step (d), the first insulating layer includes a side pattern that is less etched than the base material and has a pattern narrower than the width of the upper end of the engraved pattern. 15. The method of claim 14,
Wherein the side pattern is used as an etch mask to prevent etching of the second insulating layer formed on the side of the engraved pattern during step (f). 12. The method of claim 11,
(f)
(f1) forming a patterned photoresist layer on the second insulating layer, the patterned photoresist layer having a pattern width corresponding to the width of the lower surface of the engraved pattern;
(f2) dry-etching the second insulating layer on the lower surface of the engraved pattern to expose the substrate; And
(f3) removing the photoresist layer
≪ / RTI > 12. The method of claim 11,
(g) a step of exposing the substrate by etching an insulating layer on the other surface opposite to one surface of the substrate
Further comprising the steps of: A method of manufacturing a mask for forming an OLED pixel by electroforming,
The present invention relates to a negative electrode comprising a substrate made of a conductive single crystal silicon and having an engraved pattern formed on one surface thereof and an insulating portion formed on a side of the engraved pattern and a surface of the substrate having the engraved pattern formed thereon,
A uniform electric field is formed on the entire surface of the single crystal silicon exposed on the lower surface of the engraved pattern and a plating film of Invar or Super Invar is formed to constitute the mask body,
Wherein a plating film is prevented from being formed on a surface of the negative electrode body on which an insulating portion is formed to constitute a mask pattern, and the plating film having a pattern is FMM (Fine Metal Mask). A method of manufacturing a mask for forming an OLED pixel by electroforming,
(a) providing a substrate of a conductive single crystal silicon material;
(b) forming a first insulating layer on at least one side of the substrate;
(c) forming a patterned photoresist layer on the first insulating layer;
(d) etching the first insulating layer and the substrate through the photoresist pattern to form a depressed pattern on one surface of the substrate;
(e) removing the photoresist layer, and forming a second insulating layer on the first insulating layer and the engraved pattern; And
(f) etching the second insulating layer on the lower surface of the engraved pattern to expose the substrate to produce a cathode body; And
(g) immersing at least a part of an anode body disposed apart from the negative electrode and the negative electrode in a plating solution, and applying an electric field between the negative electrode and the positive electrode
/ RTI >
A uniform electric field is formed on the entire surface of the single crystal silicon exposed on the lower surface of the engraved pattern and a plating film of Invar or Super Invar is formed to constitute the mask body,
Wherein formation of a plating film is prevented on the surface of the cathode body where the first insulating layer and the second insulating layer are formed to constitute a mask pattern and the plating film having a pattern becomes FMM (Fine Metal Mask). An OLED pixel deposition method using a mask for forming an OLED pixel, which is manufactured by electroforming,
(a) matching a mask prepared by the method of manufacturing a mask according to any one of claims 18 to 19 with a target substrate;
(b) supplying an organic material source to a target substrate through a mask; And
(c) an organic material source is deposited on the target substrate through the pattern of the mask
/ RTI >

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