TW202227650A - Mask, method of manufacturing mask - Google Patents
Mask, method of manufacturing mask Download PDFInfo
- Publication number
- TW202227650A TW202227650A TW110101345A TW110101345A TW202227650A TW 202227650 A TW202227650 A TW 202227650A TW 110101345 A TW110101345 A TW 110101345A TW 110101345 A TW110101345 A TW 110101345A TW 202227650 A TW202227650 A TW 202227650A
- Authority
- TW
- Taiwan
- Prior art keywords
- mask
- plane
- photoresist layer
- master mold
- manufacturing
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrochemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
本發明是有關於一種遮罩、遮罩的製造方法及用於製造遮罩的母模,且特別是有關於一種採用電鑄(electroforming)所製成的遮罩及其製造方法,以及用於製造此遮罩的母模。The present invention relates to a mask, a method for manufacturing the mask, and a master mold for manufacturing the mask, and in particular, to a mask made by electroforming and a method for manufacturing the same, and a mask used for manufacturing the mask. The master mold from which this mask is made.
現今有的顯示面板已使用精細金屬遮罩(Fine Metal Mask,FMM)來製造。以有機發光二極體(Organic Light Emitting Diode,OLED)顯示面板為例,目前有的有機發光二極體顯示面板是採用蒸鍍(evaporation)來製造。在蒸鍍的過程中,精細金屬遮罩會先放置在玻璃板上,並且緊鄰或緊靠玻璃板,以使蒸鍍產生的鍍料能依照精細金屬遮罩的開口圖案而沉積在開口圖案所暴露的玻璃板上。Some display panels today have been manufactured using a Fine Metal Mask (FMM). Taking an organic light emitting diode (Organic Light Emitting Diode, OLED) display panel as an example, some OLED display panels are currently manufactured by evaporation. During the evaporation process, the fine metal mask is first placed on the glass plate, and is close to or close to the glass plate, so that the plating material produced by evaporation can be deposited on the opening pattern according to the opening pattern of the fine metal mask. on exposed glass.
現有精細金屬遮罩具有彼此相對的上表面與下表面以及多個從上表面延伸至下表面的開口,其中這些開口形成開口圖案。各個開口的孔壁通常實質上垂直於上表面與下表面。因此,在進行蒸鍍期間,從蒸鍍源而來的鍍料能沿著玻璃板法線而移動至玻璃板,從而沉積在開口圖案所暴露的玻璃板上。Existing fine metal masks have upper and lower surfaces opposed to each other and a plurality of openings extending from the upper surface to the lower surface, wherein the openings form an opening pattern. The aperture walls of each opening are generally substantially perpendicular to the upper and lower surfaces. Therefore, during the evaporation process, the plating material from the evaporation source can move to the glass plate along the normal line of the glass plate, thereby being deposited on the glass plate exposed by the opening pattern.
然而,由於各個開口的孔壁實質上垂直於上表面與下表面,因此其他不沿著玻璃板法線而朝向玻璃板移動的鍍料很多會被開口周邊的部分精細金屬遮罩所阻擋,以至於沉積物難以完全覆蓋開口圖案在玻璃板上所暴露的區域,造成有機發光二極體顯示面板發生畫素缺色或畫素顏色失真等問題,導致良率下降。However, since the hole walls of each opening are substantially perpendicular to the upper and lower surfaces, many other plating materials that do not move along the normal line of the glass plate and move toward the glass plate will be blocked by some fine metal masks around the openings. It is difficult for the deposit to completely cover the exposed area of the opening pattern on the glass plate, which causes problems such as pixel color deficiency or pixel color distortion in the organic light emitting diode display panel, resulting in a decrease in yield.
本發明至少一實施例提供一種遮罩,其具有外凸曲面與外凸壁面,以幫助不沿著法線而移動的鍍料也能順利地沉積在被鍍基板(例如玻璃板)上。At least one embodiment of the present invention provides a mask with a convex curved surface and a convex wall surface, so as to help the plating material that does not move along the normal line to be smoothly deposited on the substrate to be plated (eg, glass plate).
本發明至少一實施例還提供上述遮罩的製造方法以及用於製造此遮罩的母模。At least one embodiment of the present invention also provides a method for manufacturing the above-mentioned mask and a master mold for manufacturing the mask.
本發明至少一實施例所提供的遮罩包括第一面、第二面與多個通孔。第二面相對於第一面,而第二面具有多個外凸曲面。這些通孔連通第一面與第二面,其中各個通孔具有外凸壁面,其連接於第一面與第二面之間。The mask provided by at least one embodiment of the present invention includes a first surface, a second surface and a plurality of through holes. The second surface is opposite to the first surface, and the second surface has a plurality of convex curved surfaces. The through holes communicate with the first surface and the second surface, wherein each through hole has an outer convex wall surface, which is connected between the first surface and the second surface.
在本發明至少一實施例中,各個外凸壁面不垂直於第一面。In at least one embodiment of the present invention, each outer convex wall surface is not perpendicular to the first surface.
在本發明至少一實施例中,上述第二面的各個外凸曲面的曲率半徑大於各個通孔的外凸壁面的曲率半徑。In at least one embodiment of the present invention, the curvature radius of each convex curved surface of the second surface is larger than the curvature radius of the convex wall surface of each through hole.
在本發明至少一實施例中,上述遮罩還包括多個凸塊。這些凸塊分別形成於這些外凸曲面上,其中各個凸塊凸出於外凸曲面。In at least one embodiment of the present invention, the above-mentioned mask further includes a plurality of bumps. The bumps are respectively formed on the convex curved surfaces, wherein each of the bumps protrudes from the convex curved surfaces.
在本發明至少一實施例中,上述遮罩的材料包括鎳與鐵,其中遮罩的鎳重量百分比介於35至50%間,而遮罩的鐵重量百分比介於50至65%間。In at least one embodiment of the present invention, the material of the mask includes nickel and iron, wherein the weight percentage of nickel in the mask is between 35 and 50%, and the weight percentage of iron in the mask is between 50 and 65%.
本發明至少一實施例所提供的母模,其用於製造上述遮罩,其中母模是由導電基板所製成,並包括第一平面、第二平面與凹刻圖案。第二平面相對於第一平面。凹刻圖案顯露於第一平面,其中凹刻圖案對應遮罩。凹刻圖案具有多個凹洞,而各個凹洞具有內凹曲面。At least one embodiment of the present invention provides a master mold for manufacturing the above-mentioned mask, wherein the master mold is made of a conductive substrate, and includes a first plane, a second plane and an engraved pattern. The second plane is relative to the first plane. The engraved pattern is exposed on the first plane, wherein the engraved pattern corresponds to the mask. The engraved pattern has a plurality of cavities, and each cavity has an inner concave curved surface.
在本發明至少一實施例中,各個凹洞的深度小於第一平面與第二平面之間的厚度。In at least one embodiment of the present invention, the depth of each cavity is smaller than the thickness between the first plane and the second plane.
在本發明至少一實施例中,上述導電基板的材料為不鏽鋼。In at least one embodiment of the present invention, the material of the conductive substrate is stainless steel.
在本發明至少一實施例所提供的遮罩的製造方法中,首先,在導電基板上形成第一光阻層,其中導電基板具有第一平面與相對第一平面的第二平面,而第一光阻層局部覆蓋第一平面。接著,以第一光阻層為遮罩,從未被第一光阻層覆蓋的部分第一平面蝕刻導電基板,以形成具有多個凹洞的母模。接著,對母模進行電鑄,以在各個凹洞內沉積金屬材料。在對母模進行電鑄之後,移除母模。In the method for manufacturing a mask provided by at least one embodiment of the present invention, first, a first photoresist layer is formed on a conductive substrate, wherein the conductive substrate has a first plane and a second plane opposite to the first plane, and the first The photoresist layer partially covers the first plane. Next, using the first photoresist layer as a mask, the conductive substrate is etched from the part of the first plane not covered by the first photoresist layer, so as to form a master mold with a plurality of cavities. Next, the master mold is electroformed to deposit metallic material in each cavity. After electroforming of the master mold, the master mold is removed.
在本發明至少一實施例中,上述遮罩的製造方法還包括以下步驟。在從未被第一光阻層覆蓋的部分第一平面蝕刻導電基板之後,移除第一光阻層。在移除第一光阻層之後,以及在對母模進行電鑄之前,在母模上形成第二光阻層,其中第二光阻層覆蓋這些凹洞,並具有多個電鍍開口,而這些電鍍開口分別位於這些凹洞內。In at least one embodiment of the present invention, the method for manufacturing the mask further includes the following steps. After etching the conductive substrate from the portion of the first plane not covered by the first photoresist layer, the first photoresist layer is removed. After removing the first photoresist layer and before electroforming the master mold, a second photoresist layer is formed on the master mold, wherein the second photoresist layer covers the cavities and has a plurality of plated openings, and The plated openings are located within the cavities, respectively.
在本發明至少一實施例中,在對母模進行電鑄的期間,保留第二光阻層。In at least one embodiment of the present invention, the second photoresist layer remains during electroforming of the master mold.
在本發明至少一實施例中,各個凹洞的深度小於第一平面與第二平面之間的厚度。In at least one embodiment of the present invention, the depth of each cavity is smaller than the thickness between the first plane and the second plane.
在本發明至少一實施例中,在對母模進行電鑄的期間,保留第一光阻層。In at least one embodiment of the present invention, the first photoresist layer remains during electroforming of the master mold.
在本發明至少一實施例中,蝕刻導電基板的方法為濕蝕刻。In at least one embodiment of the present invention, the method for etching the conductive substrate is wet etching.
基於上述,由於模具部的導電圖案表面與遮蓋圖案的絕緣表面彼此切齊,加上在進行第二次電鑄期間,金屬材料不會沉積在絕緣表面上,因此導電圖案表面與絕緣表面之間的邊界(boundary)能促使金屬圖案(即金屬遮罩)形成外凸曲面,以使鏤空區的寬度不是均勻的。如此,鍍料能從外凸曲面進入鏤空區,並且順利地沉積在鏤空區所暴露的被鍍基板(例如玻璃板)上,有助於減少或避免發生畫素缺色或畫素顏色失真等問題,進而提升良率。Based on the above, since the conductive pattern surface of the mold part and the insulating surface of the masking pattern are cut flush with each other, and during the second electroforming, the metal material will not be deposited on the insulating surface, so there is no space between the conductive pattern surface and the insulating surface. The boundary of the metal pattern (ie, the metal mask) can cause the metal pattern (ie, the metal mask) to form a convex surface, so that the width of the hollow area is not uniform. In this way, the plating material can enter the hollow area from the convex surface, and is smoothly deposited on the plated substrate (such as a glass plate) exposed in the hollow area, which helps to reduce or avoid the occurrence of pixel color deficiency or pixel color distortion. problems, thereby improving yield.
利用上述母模的內凹曲面,能形成具有外凸曲面與外凸壁面的遮罩,以使在進行蒸鍍期間,遮罩能幫助不沿著法線移動的鍍料可以順利地沉積在被鍍基板(例如玻璃板)上,有助於減少或避免發生畫素缺色或畫素顏色失真等問題,進而提升良率。Using the inner concave curved surface of the above-mentioned master mold, a mask with an outer convex curved surface and an outer convex wall surface can be formed, so that during the evaporation process, the mask can help the plating material that does not move along the normal line to be smoothly deposited on the substrate. Coating substrates (such as glass plates) can help reduce or avoid problems such as pixel color deficiency or pixel color distortion, thereby improving yield.
在以下的內文中,為了清楚呈現本案的技術特徵,圖式中的元件(例如層、膜、基板以及區域等)的尺寸(例如長度、寬度、厚度與深度)會以不等比例的方式放大。因此,下文實施例的說明與解釋不受限於圖式中的元件所呈現的尺寸與形狀,而應涵蓋如實際製程及/或公差所導致的尺寸、形狀以及兩者的偏差。例如,圖式所示的平坦表面可以具有粗糙及/或非線性的特徵,而圖式所示的銳角可以是圓的。所以,本案圖式所呈示的元件主要是用於示意,並非旨在精準地描繪出元件的實際形狀,也非用於限制本案的申請專利範圍。In the following text, the dimensions (such as length, width, thickness and depth) of elements (such as layers, films, substrates and regions, etc.) in the drawings are exaggerated in unequal proportions in order to clearly present the technical features of the present application. . Therefore, the descriptions and explanations of the following embodiments are not limited to the dimensions and shapes of the elements in the drawings, but should cover the dimensions, shapes and deviations caused by actual manufacturing processes and/or tolerances. For example, the flat surfaces shown in the figures may have rough and/or non-linear features, while the acute angles shown in the figures may be rounded. Therefore, the elements shown in the drawings in this application are mainly for illustration, and are not intended to accurately depict the actual shapes of the elements, nor are they intended to limit the scope of the patent application of this application.
其次,本案內容中所出現的「約」、「近似」或「實質上」等這類用字不僅涵蓋明確記載的數值與數值範圍,而且也涵蓋發明所屬技術領域中具有通常知識者所能理解的可允許偏差範圍,其中此偏差範圍可由測量時所產生的誤差來決定,而此誤差例如是起因於測量系統或製程條件兩者的限制。此外,「約」可表示在上述數值的一個或多個標準偏差內,例如±30%、±20%、±10%或±5%內。本案文中所出現的「約」、「近似」或「實質上」等這類用字可依光學性質、蝕刻性質、機械性質或其他性質來選擇可以接受的偏差範圍或標準偏差,並非單以一個標準偏差來套用以上光學性質、蝕刻性質、機械性質以及其他性質等所有性質。Secondly, words such as "about", "approximately" or "substantially" appearing in the content of this case not only cover the clearly stated numerical value and numerical value range, but also cover the understanding of those with ordinary knowledge in the technical field to which the invention belongs. The allowable deviation range of , wherein the deviation range can be determined by the error generated during measurement, for example, the error is caused by the limitations of both the measurement system or the process conditions. Further, "about" can mean within one or more standard deviations of the above-mentioned numerical value, eg, within ±30%, ±20%, ±10%, or ±5%. Words such as "about", "approximately" or "substantially" appearing in this text may be used to select acceptable ranges or standard deviations based on optical properties, etching properties, mechanical properties or other properties, not a single Standard deviation to apply all of the above optical, etch, mechanical and other properties.
圖1A是本發明至少一實施例的遮罩的剖面示意圖。請參閱圖1A,遮罩100包括第一面110與第二面120,其中第二面120相對於第一面110。以圖1A為例,第一面110與第二面120可以分別是遮罩100的相對兩面,其中第一面110為遮罩100的上表面,而第二面120為遮罩100的下表面。1A is a schematic cross-sectional view of a mask according to at least one embodiment of the present invention. Referring to FIG. 1A , the
第一面110可以是平面,但是第二面120則不是平面。舉例而言,在圖1A所示的實施例中,第二面120具有多個外凸曲面121。遮罩100可以是由金屬材料所製成,其中此金屬材料可以是單一種金屬材料或合金材料。例如,遮罩100的材料可以包括鎳與鐵,其中遮罩100的鎳重量百分比可以介於35至50%間,而遮罩100的鐵重量百分比可以介於50至65%間。The
遮罩100還包括多個通孔130,其中這些通孔130連通第一面110與第二面120。換句話說,這些通孔130是從第一面110延伸至第二面120,並且顯露於第一面110與第二面120。這些通孔130可以呈陣列排列,而遮罩100的形狀可以是網狀,其中這些通孔130可以位於網狀遮罩100的網格。The
各個通孔130具有外凸壁面131,其連接於第一面110與第二面120之間。具體而言,在同一個通孔130中,外凸壁面131會朝向通孔130的軸心A13凸出,所以各個通孔130並不具有均勻的寬度。此外,各個外凸壁面131不垂直於第一面110,而各個通孔130的兩端皆不具有最小的寬度。在本實施例中,第二面120的各個外凸曲面121的曲率半徑可以大於各個通孔130的外凸壁面131的曲率半徑。Each through
圖1B是圖1A中的金屬遮罩應用於蒸鍍的剖示意圖。請參閱圖1B,由於遮罩100具有外凸曲面121與外凸壁面131,因此各個通孔130的寬度並非是均勻的。以圖1B為例,各個通孔130在第一面110具有寬度W11,在第二面120具有寬度W12,其中寬度W12明顯大於寬度W11。在蒸鍍的過程中,遮罩100會緊鄰或抵靠著被鍍基板101,其中具有外凸曲面121的第二面120會面向蒸鍍源10,而第一面110會面向被鍍基板101。此外,被鍍基板101可以是玻璃板,但不以此為限制。FIG. 1B is a schematic cross-sectional view of the metal mask in FIG. 1A applied to evaporation. Referring to FIG. 1B , since the
各個通孔130的寬度並非是均勻的,以使從蒸鍍源10而來的鍍料11不論是否沿著被鍍基板101的法線31而移動,可以從外凸曲面121進入這些通孔130,並順利地沉積在這些通孔130所暴露的被鍍基板101上,從而形成多個沉積物(未繪示),其中這些沉積物可以形成有機發光二極體顯示面板內的多個發光層。相較於現有精細金屬遮罩,遮罩100能幫助不沿著法線31而朝向被鍍基板101移動的鍍料11順利地沉積在通孔130所暴露的被鍍基板101區域內,以幫助減少或避免發生畫素缺色或畫素顏色失真等問題,從而提升良率。The width of each through
圖2A至圖2D是圖1A中的遮罩的製造方法的剖面示意圖。請參閱圖2A,在本實施例之遮罩的製造方法中,首先,在導電基板20上形成第一光阻層201。具體而言,導電基板20具有第一平面21與第二平面22,其中第一平面21相對於第二平面22。以圖2A為例,第一平面21與第二平面22可以分別是導電基板20的相對兩面,例如上表面與下表面。第一平面21可以是導電基板20的上表面,而第二平面22可以是導電基板20的下表面,其中第一光阻層201形成於第一平面21上。2A to 2D are schematic cross-sectional views of the manufacturing method of the mask in FIG. 1A . Referring to FIG. 2A , in the manufacturing method of the mask of this embodiment, first, a
第一光阻層201局部覆蓋第一平面21。詳細而言,第一光阻層201可以具有多個開口H1,而這些開口H1能暴露部分第一平面21。因此,第一光阻層201是局部覆蓋而非全面覆蓋第一平面21。第一光阻層201可以是經曝光與顯影之後的圖案化光阻層,而導電基板20可以是金屬板,其材料可以是單一種金屬材料或合金材料。例如,導電基板20的材料可以是不鏽鋼。此外,這些開口H1可以彼此相連,以形成網狀開口,而第一光阻層201會對應後續完成後的遮罩100的這些通孔130。The
請參閱圖2A與圖2B,接著,以第一光阻層201為遮罩,從未被第一光阻層201覆蓋的部分第一平面21蝕刻導電基板20,以形成具有多個凹洞23的母模200。具體而言,母模200包括第一平面21、第二平面22與凹刻圖案230,其中凹刻圖案230具有這些凹洞23,並且對應後續完成後的遮罩100。Referring to FIGS. 2A and 2B , then, using the
各個凹洞23的深度D23可以小於第一平面21與第二平面22之間的厚度T20。所以,這些凹洞23並不是貫穿導電基板20(或母模200)而形成。以圖2B為例,這些凹洞23可以顯露於第一平面21,但不顯露於第二平面22,所以凹刻圖案230會顯露於第一平面21。此外,在本實施例中,蝕刻導電基板20的方法可以是濕蝕刻。所以,這些凹洞23可以是透過等向性蝕刻而形成,以使各個凹洞23具有內凹曲面23c。The depth D23 of each
請參閱圖2C,接著,對母模200進行電鑄,以在各個凹洞23內沉積金屬材料,從而形成遮罩100。因此,圖2C所示的遮罩100是由沉積後的金屬材料所形成,並且形成於這些凹洞23內。由此可知,由導電基板20所製成的母模200可以用來製造遮罩100。此外,在對母模200進行電鑄來形成遮罩100的期間,第一光阻層201會被保留,以減少或避免金屬材料沉積在第一平面21上。Referring to FIG. 2C , then, electroforming is performed on the
由於遮罩100的材料可以包括鎳與鐵,所以上述電鑄所採用的電鍍液可以包括鎳離子與鐵離子,其中前述的鐵離子可以包括3價的鐵離子與2價的亞鐵離子其中至少一種。此外,遮罩100的材料可以包括鎳與鐵,而導電基板20的材料可為不鏽鋼,所以遮罩100與導電基板20兩者材料可以彼此不同。Since the material of the
凹刻圖案230會對應遮罩100,其中遮罩100的這些外凸壁面131與這些外凸曲面121分別與這些內凹曲面23c配合(fitting)。換句話說,外凸壁面131與外凸曲面121兩者能與內凹曲面23c完全接觸。因此,外凸壁面131與外凸曲面121兩者的形狀(例如曲率半徑)可由內凹曲面23c來決定。此外,由於凹洞23可透過等向性蝕刻(例如濕蝕刻)而形成,因此凹洞23的內凹曲面23c可利用調整蝕刻導電基板20的速率(rate)與時間來控制。換句話說,遮罩100的外凸壁面131與外凸曲面121也可利用調整蝕刻導電基板20的速率與時間來控制。The
請參閱圖2D,在對母模200進行電鑄之後,移除母模200,其中移除母模200的方法可以是剝離(peeling)。例如,工作人員可以用手直接剝離母模200與遮罩100,從而移除母模200。至此,遮罩100基本上已完成製造。此外,在移除母模200以前,可以先移除第一光阻層201,其中第一光阻層201可用去光阻劑移除。Referring to FIG. 2D , after electroforming the
由於母模200的凹洞23具有內凹曲面23c,所以由母模200所製成的遮罩100得以具有外凸曲面121以及外凸壁面131,以使遮罩100具有多個非均勻寬度的通孔130。由此可知,透過母模200而製成的遮罩100有利於進行蒸鍍,以幫助不沿著法線31而移動的鍍料11能順利地沉積在遮罩100所暴露的被鍍基板101上(請參閱圖1B),從而提升良率。Since the
圖3A至圖3E是本發明另一實施例的遮罩的製造方法的剖面示意圖,其中本實施例的製造方法與前述實施例的製造方法相似,因此以下主要敘述本實施例與前述實施例兩者之間的差異,而兩者相同技術特徵與功效基本上不再重複敘述及繪示。3A to FIG. 3E are schematic cross-sectional views of a manufacturing method of a mask according to another embodiment of the present invention, wherein the manufacturing method of this embodiment is similar to the manufacturing method of the previous embodiment, so the following mainly describes this embodiment and the two previous embodiments. Differences between the two, and the same technical features and functions of the two are basically not repeated in description and illustration.
請參閱圖3A與圖3B,在本實施例之遮罩的製造方法中,在以第一光阻層201為遮罩,從未被第一光阻層201覆蓋的部分第一平面21蝕刻導電基板20(可參考圖2A)之後,具有多個凹洞23的母模200得以形成。接著,移除第一光阻層201,以暴露第一平面21,如圖3B所示。Please refer to FIG. 3A and FIG. 3B , in the manufacturing method of the mask of this embodiment, the
請參閱圖3C,之後,在母模200上形成第二光阻層202,其中第二光阻層202覆蓋這些凹洞23,並覆蓋部分內凹曲面23c。第二光阻層202具有多個電鍍開口202h,而這些電鍍開口202h分別位於這些凹洞23內,並分別局部暴露這些內凹曲面23c。以圖3C為例,這些電鍍開口202h可一對一地形成在這些凹洞23的底部。第二光阻層202可以相同於第一光阻層201。也就是說,第二光阻層202可以是經曝光與顯影之後的圖案化光阻層,因此這些電鍍開口202h可以是利用曝光與顯影而形成。Referring to FIG. 3C , after that, a
請參閱圖3D,接著,對母模200進行電鑄,以在各個凹洞23內沉積金屬材料,從而形成遮罩300。因此,圖3D所示的遮罩300是由沉積後的金屬材料所形成。遮罩300的材料可相同於遮罩100的材料,所以電鑄所採用的電鍍液可以包括鎳離子與鐵離子(包括3價的鐵離子與2價的亞鐵離子其中至少一種)。在對母模200進行電鑄的期間,保留第二光阻層202,以減少或避免金屬材料沉積在第一平面21上。在進行電鑄期間,金屬材料會延伸至這些電鍍開口202h內,以形成多個凸塊390。Referring to FIG. 3D , then, electroforming is performed on the
遮罩300具有這些凸塊390,而這些凸塊390可以分別直接接觸這些凹洞23的內凹曲面23c。不過,遮罩300的其他部分會接觸第二光阻層202,不接觸內凹曲面23c。換句話說,第二光阻層202基本上是被夾置在遮罩300與這些內凹曲面23c之間,其中遮罩300可以經由這些電鍍開口202h穿過第二光阻層202。The
請參閱圖3E,在對母模200進行電鑄之後,移除母模200。例如,工作人員可用手直接剝離母模200與遮罩300,以移除母模200。至此,遮罩300基本上已完成製造。此外,在移除母模200以後,可以移除第二光阻層202,其中第二光阻層202可用去光阻劑移除。在第二光阻層202移除之後,僅遮罩300的多個凸塊390與母模200連接,以易於分離遮罩300與母模200。Referring to FIG. 3E, after electroforming the
遮罩300與前述遮罩100相似。具體而言,雖然遮罩300形成在第二光阻層202上,而非直接在凹洞23的內凹曲面23c上形成,但遮罩300與100兩者具有相同的功效,且在結構與形狀方面,遮罩300實質上也包括第一面110、第二面120與多個通孔130。其次,由於遮罩300的材料可相同於遮罩100的材料,所以遮罩300的材料也可包括鎳與鐵,其中遮罩300的鎳重量百分比可介於35至50%間,而鐵重量百分比可介於50至65%間。
由此可知,遮罩300與100相似。然而,不同於遮罩100,遮罩300還包括這些凸塊390,其中這些凸塊390形成於第二面120上。以圖3E為例,這些凸塊390分別形成於第二面120的這些外凸曲面121上,其中各個凸塊390會凸出於外凸曲面121。例如,這些凸塊390可以是一對一地凸出於這些外凸曲面121,如圖3E所示。From this, it can be seen that the
綜上所述,利用上述母模的內凹曲面,可形成具有外凸曲面與外凸壁面的遮罩,其中遮罩的各個通孔的寬度並非是均勻的,以使蒸鍍所產生的鍍料能從遮罩的第二面(具有多個外凸曲面)進入通孔中,並順利地沉積在通孔所暴露的被鍍基板(例如玻璃板)上。相較於現有精細金屬遮罩,以上實施例所揭示或教示的遮罩有助於減少或避免發生畫素缺色或畫素顏色失真等問題,進而提升良率。To sum up, using the inner concave curved surface of the above-mentioned master mold, a mask with an outer convex curved surface and an outer convex wall surface can be formed, wherein the width of each through hole of the mask is not uniform, so that the coating produced by evaporation The material can enter the through hole from the second side of the mask (with a plurality of convex curved surfaces), and is smoothly deposited on the plated substrate (eg glass plate) exposed by the through hole. Compared with the existing fine metal masks, the masks disclosed or taught in the above embodiments help to reduce or avoid problems such as pixel color deficiency or pixel color distortion, thereby improving the yield.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,本發明所屬技術領域中具有通常知識者,在不脫離本發明精神和範圍內,當可作些許更動與潤飾,因此本發明保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above by the embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the appended patent application.
10:蒸鍍源
11:鍍料
20:導電基板
21:第一平面
22:第二平面
23:凹洞
23c:內凹曲面
31:法線
100、300:遮罩
101:被鍍基板
110:第一面
120:第二面
121:外凸曲面
130:通孔
131:外凸壁面
200:母模
201:第一光阻層
202:第二光阻層
202h:電鍍開口
230:凹刻圖案
390:凸塊
A13:軸心
D23:深度
H1:開口
T20:厚度
W11、W12:寬度
10: Evaporation source
11: Plating
20: Conductive substrate
21: The first plane
22: Second plane
23:
圖1A是本發明至少一實施例的遮罩的剖面示意圖。 圖1B是圖1A中的金屬遮罩應用於蒸鍍的剖示意圖。 圖2A至圖2D是圖1A中的遮罩的製造方法的剖面示意圖。 圖3A至圖3E是本發明另一實施例的遮罩的製造方法的剖面示意圖。 1A is a schematic cross-sectional view of a mask according to at least one embodiment of the present invention. FIG. 1B is a schematic cross-sectional view of the metal mask in FIG. 1A applied to evaporation. 2A to 2D are schematic cross-sectional views of the manufacturing method of the mask in FIG. 1A . 3A to 3E are schematic cross-sectional views of a manufacturing method of a mask according to another embodiment of the present invention.
21:第一平面 21: The first plane
22:第二平面 22: Second plane
23:凹洞 23: Dimples
23c:內凹曲面 23c: Concave surface
100:遮罩 100:Mask
121:外凸曲面 121: convex surface
131:外凸壁面 131: convex wall
200:母模 200: master mold
201:第一光阻層 201: First photoresist layer
230:凹刻圖案 230: Intaglio pattern
Claims (14)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110101345A TW202227650A (en) | 2021-01-13 | 2021-01-13 | Mask, method of manufacturing mask |
CN202110584520.1A CN113416924B (en) | 2021-01-13 | 2021-05-27 | Mask, method for manufacturing mask, and master mold for manufacturing mask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110101345A TW202227650A (en) | 2021-01-13 | 2021-01-13 | Mask, method of manufacturing mask |
Publications (1)
Publication Number | Publication Date |
---|---|
TW202227650A true TW202227650A (en) | 2022-07-16 |
Family
ID=77713084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW110101345A TW202227650A (en) | 2021-01-13 | 2021-01-13 | Mask, method of manufacturing mask |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN113416924B (en) |
TW (1) | TW202227650A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW202424226A (en) * | 2022-12-07 | 2024-06-16 | 達運精密工業股份有限公司 | Manufacturing method of metal mask and metal mask thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0841679B1 (en) * | 1996-11-11 | 2003-02-12 | Kabushiki Kaisha Toshiba | Shadow mask and method of manufacturing the same |
TW201421150A (en) * | 2012-11-23 | 2014-06-01 | Onano Ind Corp | High strength precision metal mask and its fabrication method |
TWI490637B (en) * | 2013-12-06 | 2015-07-01 | Metal mask manufacturing method and metak mask | |
US9791774B2 (en) * | 2014-04-15 | 2017-10-17 | National University Of Singapore | Nanostencil mask and method for forming a nanostencil mask |
CN108026628B (en) * | 2015-09-15 | 2020-09-25 | 应用材料公司 | Shadow mask for organic light emitting diode fabrication |
CN109863259A (en) * | 2016-11-03 | 2019-06-07 | Tgo科技株式会社 | Motherboard, the manufacturing method of motherboard, the manufacturing method of mask and OLED pixel evaporation coating method |
KR101871956B1 (en) * | 2016-11-28 | 2018-07-02 | 주식회사 티지오테크 | Mother plate and producing method of the same, and producing method of the same |
CN207800030U (en) * | 2017-12-28 | 2018-08-31 | 阳程科技股份有限公司 | The laminating apparatus of curved surface object can be bonded |
-
2021
- 2021-01-13 TW TW110101345A patent/TW202227650A/en unknown
- 2021-05-27 CN CN202110584520.1A patent/CN113416924B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN113416924B (en) | 2023-08-22 |
CN113416924A (en) | 2021-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102474454B1 (en) | Deposition mask manufacturing method and deposition mask | |
JP4534984B2 (en) | Method for producing metal photoetched product | |
JP4046269B2 (en) | Vapor deposition mask for organic EL element and method for producing vapor deposition mask for organic EL element | |
KR20150056754A (en) | Vapor deposition mask and manufacturing method of vapor deposition mask | |
JPH071078A (en) | Mold with film and manufacture thereof | |
GB2419847A (en) | Printing plate and method for fabricating the same. | |
US9205443B2 (en) | Metal mask manufacturing method and metal mask | |
KR101407066B1 (en) | Method for manufacturing glass substrate having arched surface | |
TWI825368B (en) | Method of manufacturing metal mask | |
JP2006098608A (en) | Component with guide pin insertion hole and manufacturing method thereof | |
JP2015036436A (en) | Method of producing vapor deposition mask and vapor deposition mask | |
TW202227650A (en) | Mask, method of manufacturing mask | |
JP6221585B2 (en) | Vapor deposition mask and method of manufacturing vapor deposition mask | |
KR102380239B1 (en) | Method for fabricating open metal mask for Organic Light Emitting Display | |
KR100700660B1 (en) | Mask and method for fabricating thereof | |
WO2016104207A1 (en) | Vapor deposition mask and manufacturing method therefor | |
KR101274155B1 (en) | Method of fabricating metal mask | |
KR102442666B1 (en) | A method for manufacturing fine metal mask | |
KR20230141559A (en) | Metal mask and production method therefor | |
CN115747712B (en) | Mask plate and manufacturing method thereof | |
US20190341265A1 (en) | Mask and fabrication method thereof | |
TWI718575B (en) | Metal mask | |
JP2003323980A (en) | Vapor deposition mask for organic el element and its manufacturing method | |
TWI805984B (en) | Metal mask | |
TW201421150A (en) | High strength precision metal mask and its fabrication method |