KR101863714B1 - 패턴화 인터페이스를 구비한 발광소자 및 그 제조 방법 - Google Patents

패턴화 인터페이스를 구비한 발광소자 및 그 제조 방법 Download PDF

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KR101863714B1
KR101863714B1 KR1020130060298A KR20130060298A KR101863714B1 KR 101863714 B1 KR101863714 B1 KR 101863714B1 KR 1020130060298 A KR1020130060298 A KR 1020130060298A KR 20130060298 A KR20130060298 A KR 20130060298A KR 101863714 B1 KR101863714 B1 KR 101863714B1
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KR20130133142A (ko
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젠-화 푸
쳉-시엔 리
치-하오 후앙
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에피스타 코포레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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KR1020130060298A 2012-05-28 2013-05-28 패턴화 인터페이스를 구비한 발광소자 및 그 제조 방법 Active KR101863714B1 (ko)

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TW101119052 2012-05-28
TW101119052A TWI539624B (zh) 2012-05-28 2012-05-28 具有圖形化界面之發光元件及其製造方法

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KR20130133142A KR20130133142A (ko) 2013-12-06
KR101863714B1 true KR101863714B1 (ko) 2018-06-01

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US (1) US9012942B2 (https=)
JP (1) JP6161955B2 (https=)
KR (1) KR101863714B1 (https=)
CN (1) CN103456854B (https=)
DE (1) DE102013105480B4 (https=)
TW (1) TWI539624B (https=)

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US10522714B2 (en) 2011-06-15 2019-12-31 Sensor Electronic Technology, Inc. Device with inverted large scale light extraction structures
US10319881B2 (en) * 2011-06-15 2019-06-11 Sensor Electronic Technology, Inc. Device including transparent layer with profiled surface for improved extraction
CN103367555B (zh) * 2012-03-28 2016-01-20 清华大学 发光二极管的制备方法
US10090437B2 (en) * 2013-02-11 2018-10-02 Lumileds Llc LED having etched light emitting surface for increased light extraction
TW201523917A (zh) * 2013-12-12 2015-06-16 Hwasun Quartek Corp 磊晶基板、其製造方法及發光二極體
TWI623115B (zh) * 2014-10-09 2018-05-01 新世紀光電股份有限公司 具粗化表面之薄膜式覆晶發光二極體及其製造方法
DE102016200953A1 (de) * 2016-01-25 2017-07-27 Osram Opto Semiconductors Gmbh Substrat mit Strukturelementen und Halbleiterbauelement
JP6579038B2 (ja) * 2016-05-30 2019-09-25 豊田合成株式会社 半導体発光素子の製造方法
US10243099B2 (en) 2017-05-16 2019-03-26 Epistar Corporation Light-emitting device
US12532583B2 (en) * 2019-08-29 2026-01-20 Quanzhou Sanan Semiconductor Technology Co., Ltd. Flip-chip light emitting device and production method thereof
KR102802778B1 (ko) * 2019-12-11 2025-05-07 엘지전자 주식회사 마이크로 led와 관련된 디스플레이 장치 및 이의 제조 방법
US11978826B2 (en) * 2020-01-09 2024-05-07 Enkris Semiconductor, Inc. Semiconductor structures and substrates thereof, and methods of manufacturing semiconductor structures and substrates thereof
CN112820806B (zh) * 2020-12-25 2022-12-20 福建晶安光电有限公司 一种图形衬底及其制作方法以及led结构及其制作方法
TWI825390B (zh) 2021-02-02 2023-12-11 達運精密工業股份有限公司 光學擴散元件及用於三維感測的光發射組件
CN115207175B (zh) * 2022-08-26 2024-05-28 江苏第三代半导体研究院有限公司 基于图形化衬底的发光二极管芯片及其制备方法

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JP2011211075A (ja) * 2010-03-30 2011-10-20 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子の製造方法

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TWI255052B (en) * 2003-02-14 2006-05-11 Osram Opto Semiconductors Gmbh Method to produce a number of semiconductor-bodies and electronic semiconductor-bodies
KR20060131327A (ko) * 2005-06-16 2006-12-20 엘지전자 주식회사 발광 다이오드의 제조 방법
KR100640497B1 (ko) * 2005-11-24 2006-11-01 삼성전기주식회사 수직 구조 질화갈륨계 발광다이오드 소자
WO2008060594A2 (en) * 2006-11-15 2008-05-22 The Regents Of The University Of California High light extraction efficiency light emitting diode (led) through multiple extractors
US7535646B2 (en) * 2006-11-17 2009-05-19 Eastman Kodak Company Light emitting device with microlens array
JP2008181910A (ja) * 2007-01-23 2008-08-07 Mitsubishi Chemicals Corp ＧａＮ系発光ダイオード素子の製造方法
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CN102623600A (zh) * 2011-01-31 2012-08-01 隆达电子股份有限公司 半导体发光结构

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Publication number Publication date
JP6161955B2 (ja) 2017-07-12
TW201349565A (zh) 2013-12-01
DE102013105480B4 (de) 2021-11-04
CN103456854A (zh) 2013-12-18
US20130313596A1 (en) 2013-11-28
US9012942B2 (en) 2015-04-21
TWI539624B (zh) 2016-06-21
KR20130133142A (ko) 2013-12-06
DE102013105480A1 (de) 2013-11-28
CN103456854B (zh) 2018-06-29
JP2013247367A (ja) 2013-12-09

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