KR101858545B1 - 감소된 트랜지스터 누설 전류를 위한 게이트 라운딩 - Google Patents

감소된 트랜지스터 누설 전류를 위한 게이트 라운딩 Download PDF

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KR101858545B1
KR101858545B1 KR1020147019210A KR20147019210A KR101858545B1 KR 101858545 B1 KR101858545 B1 KR 101858545B1 KR 1020147019210 A KR1020147019210 A KR 1020147019210A KR 20147019210 A KR20147019210 A KR 20147019210A KR 101858545 B1 KR101858545 B1 KR 101858545B1
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South Korea
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gate
region
tip
transistor
gate tip
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Korean (ko)
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KR20140105007A (ko
Inventor
얀페이 차이
지 리
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퀄컴 인코포레이티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
KR1020147019210A 2011-12-14 2011-12-14 감소된 트랜지스터 누설 전류를 위한 게이트 라운딩 Expired - Fee Related KR101858545B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2011/083934 WO2013086693A1 (en) 2011-12-14 2011-12-14 Gate rounding for reduced transistor leakage current

Publications (2)

Publication Number Publication Date
KR20140105007A KR20140105007A (ko) 2014-08-29
KR101858545B1 true KR101858545B1 (ko) 2018-05-17

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ID=48611805

Family Applications (1)

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KR1020147019210A Expired - Fee Related KR101858545B1 (ko) 2011-12-14 2011-12-14 감소된 트랜지스터 누설 전류를 위한 게이트 라운딩

Country Status (7)

Country Link
US (1) US9153659B2 (enExample)
EP (1) EP2791974A4 (enExample)
JP (1) JP2015505160A (enExample)
KR (1) KR101858545B1 (enExample)
CN (1) CN103988309A (enExample)
IN (1) IN2014CN03984A (enExample)
WO (1) WO2013086693A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103988309A (zh) 2011-12-14 2014-08-13 高通股份有限公司 用于减小的晶体管漏泄电流的栅极倒圆
US10417369B2 (en) 2017-05-26 2019-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, corresponding mask and method for generating layout of same
US10468490B2 (en) * 2017-11-09 2019-11-05 Nanya Technology Corporation Transistor device and semiconductor layout structure
US11183576B2 (en) * 2019-02-13 2021-11-23 Micron Technology, Inc. Gate electrode layout with expanded portions over active and isolation regions
CN114695532B (zh) * 2020-12-29 2025-10-31 苏州能讯高能半导体有限公司 一种半导体器件及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006156778A (ja) * 2004-11-30 2006-06-15 Matsushita Electric Ind Co Ltd 半導体装置及びそのレイアウト設計方法

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US5874754A (en) * 1993-07-01 1999-02-23 Lsi Logic Corporation Microelectronic cells with bent gates and compressed minimum spacings, and method of patterning interconnections for the gates
US5742086A (en) * 1994-11-02 1998-04-21 Lsi Logic Corporation Hexagonal DRAM array
US5973376A (en) * 1994-11-02 1999-10-26 Lsi Logic Corporation Architecture having diamond shaped or parallelogram shaped cells
US7008832B1 (en) * 2000-07-20 2006-03-07 Advanced Micro Devices, Inc. Damascene process for a T-shaped gate electrode
US6630388B2 (en) 2001-03-13 2003-10-07 National Institute Of Advanced Industrial Science And Technology Double-gate field-effect transistor, integrated circuit using the transistor and method of manufacturing the same
US6974998B1 (en) * 2001-09-19 2005-12-13 Altera Corporation Field effect transistor with corner diffusions for reduced leakage
CN1310337C (zh) 2003-01-08 2007-04-11 台湾积体电路制造股份有限公司 隧道偏压金属氧化物半导体晶体管
US6876042B1 (en) * 2003-09-03 2005-04-05 Advanced Micro Devices, Inc. Additional gate control for a double-gate MOSFET
JP4598483B2 (ja) 2004-11-10 2010-12-15 パナソニック株式会社 半導体装置およびその製造方法
JP4575274B2 (ja) 2005-10-31 2010-11-04 富士通セミコンダクター株式会社 パターンレイアウト、レイアウトデータの生成方法及び半導体装置
US7595523B2 (en) * 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US7982247B2 (en) 2008-08-19 2011-07-19 Freescale Semiconductor, Inc. Transistor with gain variation compensation
JP2011129550A (ja) * 2009-12-15 2011-06-30 Renesas Electronics Corp 半導体集積回路装置
US8283221B2 (en) * 2010-01-25 2012-10-09 Ishiang Shih Configuration and manufacturing method of low-resistance gate structures for semiconductor devices and circuits
CN102184955B (zh) * 2011-04-07 2012-12-19 清华大学 互补隧道穿透场效应晶体管及其形成方法
US9065749B2 (en) 2011-11-21 2015-06-23 Qualcomm Incorporated Hybrid networking path selection and load balancing
CN103988309A (zh) 2011-12-14 2014-08-13 高通股份有限公司 用于减小的晶体管漏泄电流的栅极倒圆

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2006156778A (ja) * 2004-11-30 2006-06-15 Matsushita Electric Ind Co Ltd 半導体装置及びそのレイアウト設計方法

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Publication number Publication date
US9153659B2 (en) 2015-10-06
EP2791974A4 (en) 2015-08-05
WO2013086693A1 (en) 2013-06-20
CN103988309A (zh) 2014-08-13
KR20140105007A (ko) 2014-08-29
US20140346606A1 (en) 2014-11-27
IN2014CN03984A (enExample) 2015-10-23
EP2791974A1 (en) 2014-10-22
JP2015505160A (ja) 2015-02-16

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