KR101858276B1 - 포토레지스트 패턴 상에 코팅하기 위한 조성물 - Google Patents

포토레지스트 패턴 상에 코팅하기 위한 조성물 Download PDF

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Publication number
KR101858276B1
KR101858276B1 KR1020137002188A KR20137002188A KR101858276B1 KR 101858276 B1 KR101858276 B1 KR 101858276B1 KR 1020137002188 A KR1020137002188 A KR 1020137002188A KR 20137002188 A KR20137002188 A KR 20137002188A KR 101858276 B1 KR101858276 B1 KR 101858276B1
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South Korea
Prior art keywords
photoresist
photoresist pattern
coating
composition
compound
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Expired - Fee Related
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KR1020137002188A
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English (en)
Korean (ko)
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KR20130048771A (ko
Inventor
헹펭 우
멩 리
이 카오
지안 음
동관 이
성은 홍
마가레타 파우네스쿠
Original Assignee
메르크 파텐트 게엠베하
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C09D183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • C08K5/544—Silicon-containing compounds containing nitrogen

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020137002188A 2010-07-28 2011-07-27 포토레지스트 패턴 상에 코팅하기 위한 조성물 Expired - Fee Related KR101858276B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/845,236 US8852848B2 (en) 2010-07-28 2010-07-28 Composition for coating over a photoresist pattern
US12/845,236 2010-07-28
PCT/IB2011/001756 WO2012014059A1 (en) 2010-07-28 2011-07-27 A composition for coating over a photoresist pattern

Publications (2)

Publication Number Publication Date
KR20130048771A KR20130048771A (ko) 2013-05-10
KR101858276B1 true KR101858276B1 (ko) 2018-05-15

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KR1020137002188A Expired - Fee Related KR101858276B1 (ko) 2010-07-28 2011-07-27 포토레지스트 패턴 상에 코팅하기 위한 조성물

Country Status (7)

Country Link
US (1) US8852848B2 (https=)
EP (1) EP2598589B1 (https=)
JP (1) JP6012600B2 (https=)
KR (1) KR101858276B1 (https=)
CN (1) CN103025835B (https=)
TW (1) TWI525163B (https=)
WO (1) WO2012014059A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6012344B2 (ja) * 2011-10-24 2016-10-25 キヤノン株式会社 膜の形成方法
US8968586B2 (en) * 2012-02-15 2015-03-03 Jsr Corporation Pattern-forming method
JP6239833B2 (ja) * 2013-02-26 2017-11-29 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
CN103258794A (zh) * 2013-03-15 2013-08-21 上海华力微电子有限公司 防止光刻胶在湿法刻蚀中产生缺陷的工艺方法
TWI603145B (zh) * 2014-12-31 2017-10-21 羅門哈斯電子材料有限公司 光微影方法
JPWO2016190261A1 (ja) * 2015-05-25 2018-03-08 日産化学工業株式会社 レジストパターン塗布用組成物
US9455177B1 (en) * 2015-08-31 2016-09-27 Dow Global Technologies Llc Contact hole formation methods
JP6431472B2 (ja) * 2015-12-24 2018-11-28 東京エレクトロン株式会社 パターン形成方法
JP2017138514A (ja) * 2016-02-04 2017-08-10 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 表面処理用組成物およびそれを用いたレジストパターンの表面処理方法
US10114291B2 (en) * 2016-03-04 2018-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Grafting agent for forming spacer layer
JP2018005046A (ja) * 2016-07-05 2018-01-11 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 反転パターン形成組成物、反転パターンの形成方法、および素子の形成方法
JP2018005199A (ja) * 2016-07-08 2018-01-11 東京応化工業株式会社 レジストパターン厚肉化用ポリマー組成物、及びレジストパターン形成方法
JP6757618B2 (ja) * 2016-08-01 2020-09-23 東京応化工業株式会社 レジストパターン厚肉化用ポリマー組成物、及びレジストパターン形成方法
KR102720237B1 (ko) * 2016-11-23 2024-10-21 에스케이하이닉스 주식회사 임프린트 공정을 이용한 패턴 형성 방법
US11466400B2 (en) * 2018-06-19 2022-10-11 Hexcel Corporation Finish composition
US11467487B2 (en) 2019-01-03 2022-10-11 Boe Technology Group Co., Ltd. Method for manufacturing template
US12372875B2 (en) 2019-03-29 2025-07-29 Nissan Chemical Corporation Composition for resist pattern metallization process
EP3923072A1 (en) * 2020-06-08 2021-12-15 Joanneum Research Forschungsgesellschaft mbH A method of preparing an embossed structure, embossed structure and use thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008298862A (ja) * 2007-05-29 2008-12-11 Jsr Corp パターン形成方法及びそれに用いる樹脂組成物
JP2010113345A (ja) 2008-10-07 2010-05-20 Shin-Etsu Chemical Co Ltd パターン形成方法

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6403496A (https=) 1963-05-23 1964-11-24
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
DE69125634T2 (de) 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
DE59108086D1 (de) * 1990-12-20 1996-09-19 Siemens Ag Photoresist
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US6808859B1 (en) 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
TW526390B (en) 1997-06-26 2003-04-01 Shinetsu Chemical Co Resist compositions
TW457277B (en) 1998-05-11 2001-10-01 Shinetsu Chemical Co Ester compounds, polymers, resist composition and patterning process
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
WO2000038844A1 (en) 1998-12-30 2000-07-06 Senco Products, Inc. Method of improving adhesion to galvanized surfaces
US6790587B1 (en) 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
JP2001215713A (ja) * 2000-01-31 2001-08-10 Shin Etsu Chem Co Ltd レジストパターン用表面処理剤及びパターン形成方法
TW507116B (en) 2000-04-04 2002-10-21 Sumitomo Chemical Co Chemically amplified positive resist composition
WO2001098834A1 (en) 2000-06-21 2001-12-27 Asahi Glass Company, Limited Resist composition
JP2002030118A (ja) * 2000-07-14 2002-01-31 Tokyo Ohka Kogyo Co Ltd 新規コポリマー、ホトレジスト組成物、および高アスペクト比のレジストパターン形成方法
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
EP1365290B1 (en) 2001-02-09 2007-11-21 Asahi Glass Company Ltd. Resist composition
US6652977B2 (en) 2001-09-10 2003-11-25 Johnson Diversey, Inc. Primer composition
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
JP4045430B2 (ja) * 2002-12-24 2008-02-13 信越化学工業株式会社 パターン形成方法及びパターン形成材料
ATE553163T1 (de) 2003-02-25 2012-04-15 Chemetall Gmbh Verfahren zur beschichtung von metallischen oberflächen mit einem gemisch enthaltend mindestens zwei silane
US8053159B2 (en) * 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
KR100618850B1 (ko) 2004-07-22 2006-09-01 삼성전자주식회사 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법
KR100640587B1 (ko) * 2004-09-23 2006-11-01 삼성전자주식회사 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법
US7399581B2 (en) * 2005-02-24 2008-07-15 International Business Machines Corporation Photoresist topcoat for a photolithographic process
JP5046675B2 (ja) * 2007-02-14 2012-10-10 シャープ株式会社 電線複合プリント配線基板、電線複合プリント配線基板製造方法、電線部品、電線部品製造方法、および電子機器
US7923200B2 (en) 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
US8237047B2 (en) * 2007-05-01 2012-08-07 Guardian Industries Corp. Method of making a photovoltaic device or front substrate for use in same with scratch-resistant coating and resulting product
KR101546981B1 (ko) * 2007-08-22 2015-08-24 데쿠세리아루즈 가부시키가이샤 신규 아미드기 함유 실록산아민 화합물
US8987039B2 (en) * 2007-10-12 2015-03-24 Air Products And Chemicals, Inc. Antireflective coatings for photovoltaic applications
EP2249204A4 (en) * 2008-02-18 2012-01-11 Nissan Chemical Ind Ltd SILICULAR RESISTANT LAYERING COMPOSITION COMPOSITION CONTAINING A CYCLIC AMINO GROUP
US7745077B2 (en) 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP4982457B2 (ja) * 2008-09-11 2012-07-25 信越化学工業株式会社 パターン形成方法
JPWO2010032796A1 (ja) * 2008-09-19 2012-02-16 日産化学工業株式会社 サイドウォール形成用組成物
TWI418533B (zh) * 2009-05-25 2013-12-11 信越化學工業股份有限公司 光阻改質用組成物及圖案形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008298862A (ja) * 2007-05-29 2008-12-11 Jsr Corp パターン形成方法及びそれに用いる樹脂組成物
JP2010113345A (ja) 2008-10-07 2010-05-20 Shin-Etsu Chemical Co Ltd パターン形成方法

Also Published As

Publication number Publication date
EP2598589B1 (en) 2019-05-22
TW201213467A (en) 2012-04-01
KR20130048771A (ko) 2013-05-10
US20120028195A1 (en) 2012-02-02
JP2013536463A (ja) 2013-09-19
JP6012600B2 (ja) 2016-10-25
WO2012014059A1 (en) 2012-02-02
CN103025835A (zh) 2013-04-03
US8852848B2 (en) 2014-10-07
CN103025835B (zh) 2016-06-29
TWI525163B (zh) 2016-03-11
EP2598589A1 (en) 2013-06-05

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