KR101850123B1 - 파이프라인 전력 게이팅 - Google Patents

파이프라인 전력 게이팅 Download PDF

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Publication number
KR101850123B1
KR101850123B1 KR1020147000438A KR20147000438A KR101850123B1 KR 101850123 B1 KR101850123 B1 KR 101850123B1 KR 1020147000438 A KR1020147000438 A KR 1020147000438A KR 20147000438 A KR20147000438 A KR 20147000438A KR 101850123 B1 KR101850123 B1 KR 101850123B1
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South Korea
Prior art keywords
power
source
storage elements
destination
gates
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KR1020147000438A
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Korean (ko)
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KR20140040207A (ko
Inventor
다니엘 더블유. 베일레이
아론 에스. 로져스
제임스 제이. 몬타나로
브래들리 지. 버게스
피터 제이. 하난
Original Assignee
어드밴스드 마이크로 디바이시즈, 인코포레이티드
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Publication of KR20140040207A publication Critical patent/KR20140040207A/ko
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Sources (AREA)
  • Logic Circuits (AREA)
KR1020147000438A 2011-07-06 2012-07-05 파이프라인 전력 게이팅 Active KR101850123B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/176,842 US8736308B2 (en) 2011-07-06 2011-07-06 Pipeline power gating
US13/176,842 2011-07-06
PCT/US2012/045559 WO2013006702A1 (en) 2011-07-06 2012-07-05 Pipeline power gating

Publications (2)

Publication Number Publication Date
KR20140040207A KR20140040207A (ko) 2014-04-02
KR101850123B1 true KR101850123B1 (ko) 2018-04-19

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ID=46640093

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KR1020147000438A Active KR101850123B1 (ko) 2011-07-06 2012-07-05 파이프라인 전력 게이팅

Country Status (6)

Country Link
US (1) US8736308B2 (OSRAM)
EP (1) EP2730027B1 (OSRAM)
JP (1) JP5799167B2 (OSRAM)
KR (1) KR101850123B1 (OSRAM)
CN (1) CN103650346B (OSRAM)
WO (1) WO2013006702A1 (OSRAM)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9496851B2 (en) 2014-09-10 2016-11-15 Qualcomm Incorporated Systems and methods for setting logic to a desired leakage state
CN112100793B (zh) * 2019-05-31 2023-06-13 超威半导体(上海)有限公司 用于重定时流水线的基于条带的自选通

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1195902A2 (en) 2000-09-27 2002-04-10 Kabushiki Kaisha Toshiba Semiconductor integrated circuit with reduced leakage current
US20070024318A1 (en) 2005-07-29 2007-02-01 Sequence Design, Inc. Automatic extension of clock gating technique to fine-grained power gating
JP2007053680A (ja) 2005-08-19 2007-03-01 Toshiba Corp 半導体集積回路装置
JP2007335980A (ja) 2006-06-12 2007-12-27 Toshiba Corp 半導体集積回路装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980836A (en) 1988-10-14 1990-12-25 Compaq Computer Corporation Apparatus for reducing computer system power consumption
US6946869B2 (en) 2003-10-15 2005-09-20 International Business Machines Corporation Method and structure for short range leakage control in pipelined circuits
US7262631B2 (en) 2005-04-11 2007-08-28 Arm Limited Method and apparatus for controlling a voltage level
US7397271B2 (en) * 2005-08-19 2008-07-08 Kabushiki Kaisha Toshiba Semiconductor integrated circuit device
US7295036B1 (en) 2005-11-30 2007-11-13 Altera Corporation Method and system for reducing static leakage current in programmable logic devices
US8527797B2 (en) * 2007-12-26 2013-09-03 Qualcomm Incorporated System and method of leakage control in an asynchronous system
US8266569B2 (en) 2010-03-05 2012-09-11 Advanced Micro Devices, Inc. Identification of critical enables using MEA and WAA metrics
US8436647B2 (en) 2011-07-06 2013-05-07 Advanced Micro Devices, Inc. Pipeline power gating for gates with multiple destinations

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1195902A2 (en) 2000-09-27 2002-04-10 Kabushiki Kaisha Toshiba Semiconductor integrated circuit with reduced leakage current
JP2002110920A (ja) 2000-09-27 2002-04-12 Toshiba Corp 半導体集積回路
US20070024318A1 (en) 2005-07-29 2007-02-01 Sequence Design, Inc. Automatic extension of clock gating technique to fine-grained power gating
JP2007053680A (ja) 2005-08-19 2007-03-01 Toshiba Corp 半導体集積回路装置
JP2007335980A (ja) 2006-06-12 2007-12-27 Toshiba Corp 半導体集積回路装置

Also Published As

Publication number Publication date
CN103650346A (zh) 2014-03-19
JP2014526175A (ja) 2014-10-02
WO2013006702A1 (en) 2013-01-10
US8736308B2 (en) 2014-05-27
US20130009697A1 (en) 2013-01-10
EP2730027A1 (en) 2014-05-14
JP5799167B2 (ja) 2015-10-21
EP2730027B1 (en) 2018-09-05
KR20140040207A (ko) 2014-04-02
CN103650346B (zh) 2017-11-17

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