KR101835680B1 - 파워 디바이스용의 프로브 카드 - Google Patents

파워 디바이스용의 프로브 카드 Download PDF

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Publication number
KR101835680B1
KR101835680B1 KR1020147005362A KR20147005362A KR101835680B1 KR 101835680 B1 KR101835680 B1 KR 101835680B1 KR 1020147005362 A KR1020147005362 A KR 1020147005362A KR 20147005362 A KR20147005362 A KR 20147005362A KR 101835680 B1 KR101835680 B1 KR 101835680B1
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South Korea
Prior art keywords
probe
connection terminals
power device
tester
circuit board
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KR1020147005362A
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English (en)
Korean (ko)
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KR20140057571A (ko
Inventor
에이이치 시노하라
이쿠오 오가사와라
켄 타오카
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도쿄엘렉트론가부시키가이샤
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Publication of KR20140057571A publication Critical patent/KR20140057571A/ko
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06716—Elastic
    • G01R1/06722—Spring-loaded
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06777—High voltage probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/263—Circuits therefor for testing thyristors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
KR1020147005362A 2011-08-01 2012-07-30 파워 디바이스용의 프로브 카드 Active KR101835680B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011168425A JP5291157B2 (ja) 2011-08-01 2011-08-01 パワーデバイス用のプローブカード
JPJP-P-2011-168425 2011-08-01
PCT/JP2012/069925 WO2013018910A1 (ja) 2011-08-01 2012-07-30 パワーデバイス用のプローブカード

Publications (2)

Publication Number Publication Date
KR20140057571A KR20140057571A (ko) 2014-05-13
KR101835680B1 true KR101835680B1 (ko) 2018-03-07

Family

ID=47629422

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147005362A Active KR101835680B1 (ko) 2011-08-01 2012-07-30 파워 디바이스용의 프로브 카드

Country Status (7)

Country Link
US (1) US9322844B2 (https=)
EP (1) EP2762897A4 (https=)
JP (1) JP5291157B2 (https=)
KR (1) KR101835680B1 (https=)
CN (1) CN103703381B (https=)
TW (1) TWI541514B (https=)
WO (1) WO2013018910A1 (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6042760B2 (ja) * 2013-03-28 2016-12-14 東京エレクトロン株式会社 プローブ装置
JP6042761B2 (ja) * 2013-03-28 2016-12-14 東京エレクトロン株式会社 プローブ装置
JP5936579B2 (ja) * 2013-05-08 2016-06-22 本田技研工業株式会社 電流印加装置
JP6045993B2 (ja) * 2013-07-08 2016-12-14 東京エレクトロン株式会社 プローブ装置
US10527647B2 (en) * 2013-07-09 2020-01-07 Formfactor, Inc. Probe head with inductance reducing structure
JP6289962B2 (ja) 2013-07-11 2018-03-07 東京エレクトロン株式会社 プローブ装置
US10281518B2 (en) * 2014-02-25 2019-05-07 Formfactor Beaverton, Inc. Systems and methods for on-wafer dynamic testing of electronic devices
US10161990B2 (en) * 2014-03-11 2018-12-25 Sintokogio, Ltd. Inspection system for device to be tested, and method for operating inspection system for device to be tested
JP6218718B2 (ja) 2014-10-22 2017-10-25 三菱電機株式会社 半導体評価装置及びその評価方法
TWI580969B (zh) * 2015-04-14 2017-05-01 Mpi Corp Probe card
CN106707130B (zh) * 2017-01-04 2019-05-03 株洲中车时代电气股份有限公司 一种igbt模块测试装置
KR101845652B1 (ko) * 2017-01-17 2018-04-04 주식회사 텝스 부품 실장된 웨이퍼 테스트를 위한 하이브리드 프로브 카드
CN109298305B (zh) * 2017-07-24 2020-12-11 株洲中车时代半导体有限公司 一种针对压接式igbt模块子模组的测试装置及方法
KR102243839B1 (ko) * 2018-07-13 2021-04-22 도쿄엘렉트론가부시키가이샤 중간 접속 부재, 및 검사 장치
CN113341294B (zh) * 2021-06-24 2024-12-17 浙江大学绍兴微电子研究中心 晶圆上一开关元器件的电气特性测试装置
AT525517A1 (de) * 2021-10-13 2023-04-15 Gaggl Dipl Ing Dr Rainer Prüfvorrichtung und Anordnung mit dieser

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050099192A1 (en) * 2002-11-25 2005-05-12 John Dunklee Probe station with low inductance path
US20080061803A1 (en) * 2006-08-22 2008-03-13 Formfactor, Inc. Method and apparatus for making a determination relating to resistance of probes
US20100033199A1 (en) * 2006-10-17 2010-02-11 Tokyo Electron Limited Holding member for inspection, inspection device and inspecting method
JP2011138865A (ja) * 2009-12-28 2011-07-14 Micronics Japan Co Ltd 半導体デバイスの検査装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08184639A (ja) * 1994-12-28 1996-07-16 Sony Tektronix Corp 接触子構体
JP4387125B2 (ja) 2003-06-09 2009-12-16 東京エレクトロン株式会社 検査方法及び検査装置
JP4784158B2 (ja) * 2005-06-07 2011-10-05 三菱電機株式会社 プローブカード、およびこれを用いた直流特性測定方法
JP2007040926A (ja) 2005-08-05 2007-02-15 Tokyo Seimitsu Co Ltd プローバ
JP4979214B2 (ja) * 2005-08-31 2012-07-18 日本発條株式会社 プローブカード
JP2007123430A (ja) * 2005-10-26 2007-05-17 Tokyo Seimitsu Co Ltd 半導体ウエハ及び半導体検査方法
US7521947B2 (en) * 2006-05-23 2009-04-21 Integrated Technology Corporation Probe needle protection method for high current probe testing of power devices
WO2007137284A2 (en) * 2006-05-23 2007-11-29 Integrated Technology Corporation Probe needle protection method for high current probe testing of power devices
JP2011047782A (ja) * 2009-08-27 2011-03-10 Tokyo Electron Ltd 半導体素子評価方法
JP5296117B2 (ja) 2010-03-12 2013-09-25 東京エレクトロン株式会社 プローブ装置
CN102072974A (zh) * 2010-11-11 2011-05-25 嘉兴斯达微电子有限公司 一种功率模块可靠性试验夹具

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050099192A1 (en) * 2002-11-25 2005-05-12 John Dunklee Probe station with low inductance path
US20080061803A1 (en) * 2006-08-22 2008-03-13 Formfactor, Inc. Method and apparatus for making a determination relating to resistance of probes
US20100033199A1 (en) * 2006-10-17 2010-02-11 Tokyo Electron Limited Holding member for inspection, inspection device and inspecting method
JP2011138865A (ja) * 2009-12-28 2011-07-14 Micronics Japan Co Ltd 半導体デバイスの検査装置

Also Published As

Publication number Publication date
EP2762897A4 (en) 2015-04-01
JP5291157B2 (ja) 2013-09-18
JP2013032938A (ja) 2013-02-14
US9322844B2 (en) 2016-04-26
EP2762897A1 (en) 2014-08-06
WO2013018910A1 (ja) 2013-02-07
TW201326827A (zh) 2013-07-01
CN103703381A (zh) 2014-04-02
CN103703381B (zh) 2016-12-21
TWI541514B (zh) 2016-07-11
US20140176173A1 (en) 2014-06-26
KR20140057571A (ko) 2014-05-13

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